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At least 577 records · Page 32

An atom probe tomography and inventory calculation examination of second phase precipitates in neutron irradiated single crystal tungsten

Tungsten is the prime candidate material for the plasma facing divertor system and first wall armor of future nuclear fusion reactors. However, the understanding of the microstructural and chemical evolution of pure tungsten under neutron irradiation is relatively unknown, in part due to a lack of experimental data on this topic. Here, single crystal tungsten has been irradiated in the High Flux Isotope Reactor (HFIR) at Oak Ridge National Laboratory at a nominal temperature of 700–800 °C to damage levels of 0.1 and 1.8 displacements per atom (dpa). Inventory calculations of the neutron irradiation experiments have been used to track isotope generation and decay to inform atom probe tomography (APT) results in the determination of the transmutation-induced precipitate compositions. Furthermore, APT crystallography has been used to show the relationship between precipitates and matrix. The composition of the precipitates is shown to progress towards that of the σ-phase at the highest dose studied, with those precipitates lying along crystallographic planes similar to those of displacement-induced dislocations. This work also sets the framework for APT studies of materials that contain isotopic ratios far from those observed in the natural state.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

Track Structure and the Biological Effectiveness of Accelerated Particles for the Induction of Chromosome Damage

Track structure models predict that at a fixed value of LET, particles with lower charge number, Z will have a higher biological effectiveness compared to particles with a higher Z. In this report we investigated how track structure effects induction of chromosomal aberration in human cells. Human lymphocytes were irradiated in vitro with various energies of accelerated iron, silicon, neon, or titanium ions and chromosome damage was assessed in using three color FISH chromosome painting in chemically induced PCC samples collected a first cell division post irradiation. The LET values for these ions ranged from 30 to195 keV/micron. Of the particles studied, Neon ions have the highest biological effectiveness for induction of total chromosome damage, which is consistent with track structure model predictions. For complex-type exchanges 64 MeV/ u Neon and 450 MeV/u Iron were equally effective and induced the most complex damage. In addition we present data on chromosomes exchanges induced by six different energies of protons (5 MeV/u to 2.5 GeV/u). The linear dose response term was similar for all energies of protons suggesting that the effect of the higher LET at low proton energies is balanced by the production of nuclear secondaries from the high energy protons.

George, K.↗

Radiation damage in high-voltage silicon solar cells

Three types of open circuit high voltage solar cells were tested to determine their performance after exposure to 1 MeV electron irradiations. The cells with a relatively deep n-type emitter were more susceptible to radiation damage than other high open circuit high voltage cells. The use of diffused or ion implanted junctions leads to open circuit high voltage cell designs that are less susceptible to radiation damage. These latter two types of cells show degradations that are typical of the 0.1 ohm-cm material from which they are fabricated. Furthermore, exposure to ionizing radiation causes oxide degradation and decreased cell performance in cells that depend on a charged oxide to achieve significant cell properties. Hence, the combination of a charged oxide and a relatively deep n-type emitter is not recommended for incorporation into a cell designed for use in the particulate radiation environment of space.

Weinberg, I.↗

High-throughput ion irradiation of additively manufactured compositionally complex alloys

Several advanced nuclear reactor designs promise efficiency and safety improvements over the current reactor fleet but are limited by the current set of ASME code-qualified materials. Novel alloys including high-entropy alloys (HEAs), and more broadly compositionally complex alloys (CCAs), have shown promising irradiation-tolerance. However, the vast range of alloy compositions adds to an already time-consuming alloy development process. In this study, to accelerate the development of novel alloys for nuclear applications, a high-throughput (HTP) methodology has been employed. Additive manufacturing has been used to produce a compositional array of unary, binary, ternary, and quaternary alloys, including several CCAs, which span the Cr-Fe-Mn-Ni composition space. Additionally, the compositional array was homogenized at 1000°C for 24 hours and each sample was irradiated using 4-MeV Ni2+ ions at room temperature to a peak damage of 50 dpa, as estimated using SRIM, at the University of Wisconsin Ion Beam Laboratory. A custom XY stage was built to accommodate the large compositional array and half of each sample was masked during irradiation enabling both the irradiated and unirradiated properties of each alloy to be characterized side-by-side. Each alloy was characterized using X-ray fluorescence (XRF), X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), and nanoindentation. CALPHAD simulations spanning the entire Cr-Fe-Mn-Ni composition space at 1000°C were performed to compare predicted equilibrium phases with phases identified experimentally from the unirradiated regions of each alloy. Nanoindentation measurements indicate radiation-induced hardening ranging from ~1-1.5 GPa in each of Cr-Fe-Mn-Ni CCAs, which is relatively insensitive to modest changes in alloy composition and comparable to hardening observed in neutron irradiated Cr-Fe-Mn-Ni CCAs in the literature. Overall, a substantial time savings was realized by employing HTP synthesis, irradiation, and characterization in this study compared to conventional techniques, the implications of which are discussed.

36 MATERIALS SCIENCE↗

Material and component developments for the DEMO divertor using fibre reinforcement and additive manufacturing

Within the research along the European Fusion Roadmap, water-cooled divertor PFCs are foreseen in the design of a first fusion demonstration power plant (DEMO) in order to provide reliable heat removal capability. In the frame of this concerted attempt, the Max Planck Institute for Plasma Physics is concentrating on the development and testing of composite materials based on tungsten (W, preferred armour material) and copper (Cu, preferred heat sink material). W fibres (W f ) as monofilaments and yarns as reinforcement play a central role in these investigations due to their extraordinary properties concerning ductility already at room temperature and high tensile strength. Recent investigations on the impact of radiation damage suggest that the fibres retain their ductility upon irradiation. W reinforced with W fibres (W f /W) allows to overcome the intrinsic brittleness of W. Quantitative mechanical fracture tests of W f /W confirm the basic mechanisms of fibre reinforcement and the increased resistance to mechanical fatigue. The good wettability of W with liquid Cu and the absence of any metallurgical solubility make up an ideal material pairing for composite production. W fibre-reinforced Cu (W f /Cu) cooling tubes provide a rather high thermal conductivity (> 250 W mK -1 ) and at least twice the strength of CuCrZr in hoop direction in the temperature range up to at least 500 °C. Very recent neutron irradiation experiments confirm the sustainment of ductility of the W f /Cu composite. Numerical simulations suggest that thermal stresses in W-Cu PFCs could be strongly reduced by tailoring the local W and Cu volume fraction. This 'freely' distributed material composition can be achieved by means of additively manufactured W skeletons consecutively infiltrated by Cu. Investigations with W preforms produced by Laser Beam Powder Bed Fusion and infiltrated by Cu demonstrate the feasibility of this approach while testing of specifically prepared specimen is ongoing.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Multiphysics Simulations of Thermal Shock Testing of Nanofibrous High Power Targets

Increase of primary beam power for neutrino beam-lines leads to a reduced lifespan for production targets. New concepts for robust targets are emerging from the field of High Power Targetry (HPT); one idea being investigated by the HPT R&D Group at Fermilab is an electrospun nanofiber target. As part of their evaluation, samples with different densities were sent to the HiRadMat facility at CERN for thermal shock tests. The samples with the higher density, irradiated under a high intensity beam pulse, exhibit major damage at the impact site whereas those with the lower density show no apparent damage. The exact cause of this failure was unclear at the time. In this paper, we present the results of multiphysics simulations of the thermal shock experienced by the nanofiber targets that suggest the failure originates from the reduced permeability of the high density sample to air flow. The air present in the porous target expands due to heating from the beam, but is unable to flow freely in the high density sample, resulting in a larger back pressure that blows apart the nanofiber mat. We close with a discussion on how to further validate this hypothesis.

43 PARTICLE ACCELERATORS↗

Multiphysics Simulations of Thermal Shock Testing of Nanofibrous High Power Targets

Increase of primary beam power for neutrino beam-lines leads to a reduced lifespan for production targets. The field of High Power Targetry (HPT) is generating new concepts to meet the need for robust targets. One idea being investigated by the HPT Research and Development Group at Fermilab is an electrospun nanofiber target. As part of their evaluation, samples with different densities were sent to the HiRadMat facility at CERN for thermal shock tests. The samples with the higher density, irradiated under a high intensity beam pulse, exhibit major damages at the impact site whereas those with the lower density show no apparent damages. The exact cause of this failure was unclear at the time. In this paper, we present the results of multiphysics simulations of the thermal shock experienced by the nanofiber targets that suggest the failure originates from the reduced permeability of the high density sample to airflow. The air present in the porous target expands due to heating from the beam, but is unable to flow freely in the high density sample, resulting in a larger back pressure that blows apart the mat. We close with a discussion on how to further validate this hypothesis.

43 PARTICLE ACCELERATORS↗

Magnetron Sputtered Gold Contacts on N-gaas

Direct current planar magnetron sputtering was used to deposit gold Schottky barrier electrical contacts on n-type GaAs of varying doping densities. The electrical character of the contact was determined from current voltage and electron beam induced voltage data. Without reducing the surface concentration of carbon and oxide, the contacts were found to be rectifying. There is evidence that energetic neutral particles reflected from the magnetron target strike the GaAs and cause interfacial damage similar to that observed for ion sputtering. Particle irradiation of the surface during contact deposition is discussed.

Buonaquisti, A. D.↗

GaAs Solar Cell Radiation Handbook

The handbook discusses the history of GaAs solar cell development, presents equations useful for working with GaAs solar cells, describes commonly used instrumentation techniques for assessing radiation effects in solar cells and fundamental processes occurring in solar cells exposed to ionizing radiation, and explains why radiation decreases the electrical performance of solar cells. Three basic elements required to perform solar array degradation calculations: degradation data for GaAs solar cells after irradiation with 1 MeV electrons at normal incidence; relative damage coefficients for omnidirectional electron and proton exposure; and the definition of the space radiation environment for the orbit of interest, are developed and used to perform a solar array degradation calculation.

Anspaugh, B. E.↗

Impact of amorphous pockets on displacement damage evolution in silicon

Silicon has long been known to exhibit amorphization in response to heavy particle bombardment. For doses below the total amorphization threshold, partial amorphization is observed in the form of scattered amorphous pockets. While extensive research has gone into modeling the formation and evolution of amorphous pockets in response to irradiation, no studies yet investigate their impact on the evolution of other damage such as interstitial supersaturation and clustering. In this study, we survey the impact of amorphous pockets on defect evolution in silicon when treated as static sinks. MD is first used to show that amorphous pockets provide energetically favorable sites for point defects relative to the crystalline bulk, supporting the hypothesis that they act as sinks. A 0-D cluster dynamics model is then constructed, taking an interstitial clustering model from the literature and including amorphous pockets as a sink species. We conduct our survey for temperatures between 30 and 400 °C and sink strengths between 1 to 6 x 10 10 cm −2 . Both implantation- and radiation-induced damage states are investigated using interstitial and vacancy concentrations as initial condition variables. We find that, due to the differing migration rates of the interstitial and the vacancy, amorphous pockets have a non-monotonic impact on the final damage state depending on the effective sink strength of the amorphous pockets, resulting in increased damage formation in regimes of intermediate amorphization. In conclusion, this result emphasizes the important role of amorphous pockets in governing the evolution of damage in partially amorphized crystalline materials.

36 MATERIALS SCIENCE↗

Electron-beam induced damage in thin insulating films on compound semiconductors

Phosphorus rich plasma enhanced chemical vapor deposition (PECVD) of silicon nitride and silicon dioxide films on n-type indium phosphide (InP) substrates were exposed to electron-beam irradiation in the 5 to 40 keV range for the purpose of characterizing the damage induced in the dielectric. The electron-beam exposure was on the range of 10(exp -7) to 10(exp -3) C/sq cm. The damage to the devices was characterized by capacitance-voltage (C-V) measurements of the metal insulator semiconductor (MIS) capacitors. These results were compared to results obtained for radiation damage of thermal silicon dioxide on silicon (Si) MOS capacitors with similar exposures. The radiation induced damage in the PECVD silicon nitride films on InP was successfully annealed out in an hydrogen/nitrogen (H2/N2) ambient at 400 C for 15 min. The PECVD silicon dioxide films on InP had the least radiation damage, while the thermal silicon dioxide films on Si had the most radiation damage.

Pantic, Dragan M.↗

Electron beam induced damage in PECVD Si3N4 and SiO2 films on InP

Phosphorus rich plasma enhanced chemical vapor deposition (PECVD) of silicon nitride and silicon dioxide films on n-type indium phosphide (InP) substrates were exposed to electron beam irradiation in the 5 to 40 keV range for the purpose of characterizing the damage induced in the dielectic. The electron beam exposure was on the range of 10(exp -7) to 10(exp -3) C/sq cm. The damage to the devices was characterized by capacitance-voltage (C-V) measurements of the metal insulator semiconductor (MIS) capacitors. These results were compared to results obtained for radiation damage of thermal silicon dioxide on silicon (Si) MOS capacitors with similar exposures. The radiation induced damage in the PECVD silicon nitride films on InP was successfully annealed out in an hydrogen/nitrogen (H2/N2) ambient at 400 C for 15 min. The PECVD silicon dioxide films on InP had the least radiation damage, while the thermal silicon dioxide films on Si had the most radiation damage.

Pantic, Dragan M.↗

Comparison of hardening and microstructures of ferritic/martensitic steels irradiated with fast neutrons and dual ions

Ferritic/martensitic steels T91 and HT9 were irradiated with neutrons (BOR-60 reactor) and dual ions (9 MeV Fe 3+ and 3.42 MeV energy degraded He 2+ ) from 369 to 520 °C and damage levels of 16.6 to 72 dpa to quantify the possibility of using ion irradiation to simulate neutron irradiation in terms of microstructures and mechanical properties. Nanoindentation testing was performed to obtain the bulk equivalent hardness of the dual-ion irradiated samples. For the neutron irradiated samples, both nanoindentation and Vickers hardness testing were conducted. Transmission Electron Microscopy (TEM) characterizations of the cavities, dislocation loops and precipitates were conducted to account for the strengthening contribution of each microstructure element. The good agreement between the microstructure-predicted (dispersed barrier hardening) and measured strength of the irradiated specimens demonstrated the accuracy of the strengthening model and the nanoindentation tests. Furthermore, the comparison of mechanical property and microstructure changes in ion and neutron irradiated structural materials indicated that ion irradiation replicated many neutron irradiation features. However, a single 70 °C temperature shift is insufficient to match all complex microstructures of neutron vs. ion irradiation over the irradiation temperature range of 369–520 °C.

36 MATERIALS SCIENCE↗

Amorphization resistance of nanocrystalline 3C-SiC implanted with H2+ ions

Compared to single-crystal SiC, nanocrystalline SiC with high densities of stacking faults has been reported to be much more resistant to amorphization under self-ion and electron irradiations. This study examines H2+ ion irradiation-induced amorphization in nanocrystalline 3C-SiC with dense stacking faults using transmission electron microscopy. The results show that full amorphization at room temperature occurs at a comparable dose to that for its single-crystal SiC counterpart under the identical irradiation conditions. Both materials are amorphized as a result of local damage accumulation. The formation of the nucleation sites for amorphization is not appreciably affected by the presence of stacking faults and grain boundaries. The behavior may be attributed to the significant chemical effects that may completely immobilize the point defects in SiC at room temperature. The results suggest cautions be excised to use nanocrystalline SiC materials in high H irradiation environment at room temperature. Further studies of the H behavior at elevated temperatures are warranted.

Amorphization, ion irradiation, SiC↗

The microstructure and He + ion irradiation behavior of novel low-activation W-Ta-Cr-V refractory high entropy alloy for nuclear applications

Microstructure and nanohardness of a nearly equimolar W-Ta-Cr-V high entropy alloy (HEA), as well as its irradiation response under He + irradiation, were investigated. The single-phase body-centered cubic nanostructured alloy with a 1 µm thick layer was fabricated on a silicon substrate using a magnetron sputtering method. The HEA film has a complex microstructure consisting of micrometric domains that exhibit internal nanostructure controlled by their crystal orientation. The measured nanohardness of the W-Ta-Cr-V alloy is 13 ± 2 GPa, which significantly exceeds the hardness of nanocrystalline tungsten as a result of the high solid-solution strengthening effect. In order to evaluate the irradiation resistance of the HEA film, the material was irradiated with 200 keV He + ions at room temperature, with two different ion fluences: 1 × 10 16 and 5 × 10 16 ions/cm 2 . Using transmission electron microscopy, a high density of extremely fine He bubbles is observed that were uniformly distributed in the matrix. The increase of He + ion fluence increased the density of bubbles, whereas their size remained at a similar level, which indicates that the damage proceeds by the nucleation of additional He bubbles, not by their growth.

36 MATERIALS SCIENCE↗

Exploring Fabrication of Ultra-low Absorption, Multilayer, Hafnium High Reflectors

Ultra-low absorption, high damage threshold coatings are critical for the advancement of the high power CW laser technologies, and in most cases, are a limiting factor for the output power. Since high power CW laser systems enable extremely high power irradiances, when the light is incident on an HR mirror, part of the energy is absorbed and converted into heat, which can have many detrimental side effects. The worst-case scenarios are optical distortion and laser-induced damage. These optics must operate reliably with irradiances of 100's kW/cm 2 to MW/cm 2 . The highest pulsed laser damage threshold high reflectors are consistently fabricated with hafnia material. However, hafnia is not the material of choice for high power CW laser systems because of very high absorption and scatter properties, factors of >100x higher than tantala-silica, due to its poly crystalline nature. This study focuses on CW laser use applications, where the coatings’ laser damage resistance is largely limited by the inherent absorption of the coating materials. The goal is to study the feasibility of utilizing a “composite” hafnium-silica and a “doped” hafnia-silica target materials to prohibit crystallization. The results from the study were extremely successful. Hafnia high reflectors coatings generated from this study exhibited one micron absorption values of approximately 1 ppm, which are the lowest reported values to date.

36 MATERIALS SCIENCE↗