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NASA NTRS1990

Vacancy formation and extraction energies in semiconductor compounds and alloys

A model for calculating the extraction energies and vacancy-formation energies in diamond-cubic and zinc-blende semiconductors is developed on the basis of Harrison's (1980, 1983) tight-binding theory. The extraction energies provide a reference from which other final states of the removed atoms can be calculated. The results of calculations show that, in a given compound, the calculated extraction energies are larger for the anion than for the cation, with the difference between the cation and the anion being larger in the II-VI than in the III-V compounds. This is in agreement with experimental results.

Berding, M. A.↗

NASA NTRS1991

Molecular dynamics investigation of radiation damage in semiconductors

Results of a molecular dynamics investigation of the effects of radiation damage on the crystallographic structure of semiconductors are reported. Particular cosiderastion is given to the formation of point defects and small defect complexes in silicon at the end of a radiation-damage cascade. The calculations described make use of the equivalent crystal theory of Smith and Banerjea (1988). Results on the existence of an atomic displacement threshold, the defect formation energy, and some crystallographic information on the defects observed are reported.

Good, Brian S.↗

NASA NTRS1992

Planning for the semiconductor manufacturer of the future

Texas Instruments (TI) is currently contracted by the Air Force Wright Laboratory and the Defense Advanced Research Projects Agency (DARPA) to develop the next generation flexible semiconductor wafer fabrication system called Microelectronics Manufacturing Science & Technology (MMST). Several revolutionary concepts are being pioneered on MMST, including the following: new single-wafer rapid thermal processes, in-situ sensors, cluster equipment, and advanced Computer Integrated Manufacturing (CIM) software. The objective of the project is to develop a manufacturing system capable of achieving an order of magnitude improvement in almost all aspects of wafer fabrication. TI was awarded the contract in Oct., 1988, and will complete development with a fabrication facility demonstration in April, 1993. An important part of MMST is development of the CIM environment responsible for coordinating all parts of the system. The CIM architecture being developed is based on a distributed object oriented framework made of several cooperating subsystems. The software subsystems include the following: process control for dynamic control of factory processes; modular processing system for controlling the processing equipment; generic equipment model which provides an interface between processing equipment and the rest of the factory; specification system which maintains factory documents and product specifications; simulator for modelling the factory for analysis purposes; scheduler for scheduling work on the factory floor; and the planner for planning and monitoring of orders within the factory. This paper first outlines the division of responsibility between the planner, scheduler, and simulator subsystems. It then describes the approach to incremental planning and the way in which uncertainty is modelled within the plan representation. Finally, current status and initial results are described.

Fargher, Hugh E.↗

NASA NTRS1993

Silicon carbide semiconductor technology for high temperature and radiation environments

Viewgraphs on silicon carbide semiconductor technology and its potential for enabling electronic devices to function in high temperature and high radiation environments are presented. Topics covered include silicon carbide; sublimation growth of 6H-SiC boules; SiC chemical vapor deposition reaction system; 6H silicon carbide p-n junction diode; silicon carbide MOSFET; and silicon carbide JFET radiation response.

Matus, Lawrence G.↗

NASA NTRS1993

Semiconductor cooling apparatus

Gas derived graphite fibers generated by the decomposition of an organic gas are joined with a suitable binder. This produces a high thermal conductivity composite material which passively conducts heat from a source, such as a semiconductor, to a heat sink. The fibers may be intercalated. The intercalate can be halogen or halide salt, alkaline metal, or any other species which contributes to the electrical conductivity improvement of the graphite fiber. The fibers are bundled and joined with a suitable binder to form a high thermal conductivity composite material device. The heat transfer device may also be made of intercalated highly oriented pyrolytic graphite and machined, rather than made of fibers.

Banks, Bruce A.↗

NASA NTRS1991

Silicon carbide, a semiconductor for space power electronics

After many years of promise as a high temperature semiconductor, silicon carbide (SiC) is finally emerging as a useful electronic material. Recent significant progress that has led to this emergence has been in the area of crystal growth and device fabrication technology. High quality of single-crystal SiC wafers, up to 25 mm in diameter, can now be produced routinely from boules grown by a high temperature (2700 K) sublimation process. Device fabrication processes, including chemical vapor deposition (CVD), in situ doping during CVD, reactive ion etching, oxidation, metallization, etc. have been used to fabricate p-n junction diodes and MOSFETs. The diode was operated to 870 K and the MOSFET to 770 K.

Powell, J. A.↗

NASA NTRS1991

Far field and wavefront characterization of a high-power semiconductor laser for free space optical communications

The spatial pointing angle and far field beamwidth of a high-power semiconductor laser are characterized as a function of CW power and also as a function of temperature. The time-averaged spatial pointing angle and spatial lobe width were measured under intensity-modulated conditions. The measured pointing deviations are determined to be well within the pointing requirements of the NASA Laser Communications Transceiver (LCT) program. A computer-controlled Mach-Zehnder phase-shifter interferometer is used to characterize the wavefront quality of the laser. The rms phase error over the entire pupil was measured as a function of CW output power. Time-averaged measurements of the wavefront quality are also made under intensity-modulated conditions. The measured rms phase errors are determined to be well within the wavefront quality requirements of the LCT program.

Cornwell, Donald M., Jr.↗

NASA NTRS1992

Progress in silicon carbide semiconductor technology

Silicon carbide semiconductor technology has been advancing rapidly over the last several years. Advances have been made in boule growth, thin film growth, and device fabrication. This paper wi11 review reasons for the renewed interest in SiC, and will review recent developments in both crystal growth and device fabrication.

Powell, J. A.↗

NASA NTRS1994

Synthesis Of Ir(1-x-y)Rh(x)Co(y)Sb(3) Semiconductors

Ir(1-x-y)Rh(x)Co(y)Sb(3) semiconductors synthesized by gradient-freeze and sintering techniques. Sintering techniques used for variety of compositions; gradient-freeze technique used for RhSb(3) and CoSb(3).

Caillat, Thierry↗

NASA NTRS1994

High-Performance Thermoelectric Semiconductors

Figures of merit almost double current state-of-art thermoelectric materials. IrSb3 is semiconductor found to exhibit exceptional thermoelectric properties. CoSb3 and RhSb3 have same skutterudite crystallographic structure as IrSb3, and exhibit exceptional transport properties expected to contribute to high thermoelectric performance. These three compounds form solid solutions. Combination of properties offers potential for development of new high-performance thermoelectric materials for more efficient thermoelectric power generators, coolers, and detectors.

Fleurial, Jean-Pierre↗

NASA NTRS1992

Electronic and total energy properties of ternary and quaternary semiconductor compounds, alloys and superlattices

This proposal was mainly concerned with the theoretical study of semiconductor compounds, alloys, and superlattices of interest for photovoltaic applications. In the last year (1991) a study was devoted to metal/graphite bonding in relation to use of graphite fiber reinforcement of Cu for high thermal conductivity applications. The main research topics addressed during the full period of the grant are briefly described: studies of the In-Ga-As ternary system; band-offsets at common anion and InAs/GaSb/AlSb heterojunctions; alloy theory (cluster variation method); and Cu/graphite bonding. Most of the work was described more extensively in previous yearly reports and renewal applications and in publications. The last topic is described more fully in a separate report attached. A list of publications resulting directly from this grant or from other grants but related to this work and of conference presentations is given at the end.

Lambrecht, Walter R. L.↗

NASA NTRS1993

Growth experiment of narrow band-gap semiconductor PbSnTe single crystals in space (M-1)

An experiment on crystal growth of Pb(1-x)Sn(x)Te in microgravity is planned. This material is an alloy of the compound semiconductors PbTe and SnTe. It is a promising material for infrared diode lasers and detectors in the wavelength region between 6 and 30 micron. Since the electrical properties of Pb(1-x)Sn(x)Te depend greatly on the Pb/Sn ratio and crystalline defects as well as impurity concentration, homogeneous, defect-free, high-quality crystals are anticipated. Although many growth methods, such as the pulling method, the Bridgman method, the vapor growth method, etc., have been applied to the growth of Pb(1-x)Sn(x)Te, large, homogeneous, low-defect-density crystals have not yet been grown on Earth. The unsuccessful results were caused by buoyancy-driven convection in the fluids induced by the specific gravity difference between heated and cooled fluids on Earth. A crystal is grown by cooling the melt from one end of the ampoule. In crystal growth from the melt, about 30 percent of the SnTe in the melt is rejected at the solid-liquid interface during solidification. On Earth, the rejected SnTe is completely mixed with the remaining melt by convection in the melt. Therefore, SnTe concentration in the melt, and accordingly in the crystal, increases as the crystal grows. In the microgravity environment, buoyancy-driven convection is suppressed because the specific gravity difference is negligible. In that case, the rejected SnTe remains at the solid-liquid interface and its concentration increases only at the interface. If the growth rate is higher than the PbTe-SnTe interdiffusion rate, the amount of SnTe which diffuses from the interface into the melt increases as SnTe piles up at the interface, and finally it balances the amount of rejected SnTe during solidification, resulting in steady-state SnTe transportation at the interface. By using this principle, compositionally homogeneous crystals can be grown. Furthermore, low-defect-density crystals will be grown in microgravity, because convection causes crystalline defects by mising hot and cold fluids and generating temperature fluctuations in them.

Yamada, Tomoaki↗

NASA NTRS1993

Optimal convolution SOR acceleration of waveform relaxation with application to semiconductor device simulation

In this paper we describe a novel generalized SOR (successive overrelaxation) algorithm for accelerating the convergence of the dynamic iteration method known as waveform relaxation. A new convolution SOR algorithm is presented, along with a theorem for determining the optimal convolution SOR parameter. Both analytic and experimental results are given to demonstrate that the convergence of the convolution SOR algorithm is substantially faster than that of the more obvious frequency-independent waveform SOR algorithm. Finally, to demonstrate the general applicability of this new method, it is used to solve the differential-algebraic system generated by spatial discretization of the time-dependent semiconductor device equations.

Reichelt, Mark↗

NASA NTRS1993

Characterization of convection related defects in II-VI compound semiconductors

The research carried out under NAG8-913, 'Characterization of Convection Related Defects in II-VI Compound Semiconductors', was aimed at exploration of the potential of axial magnetic fields for melt stabilization when applied in Bridgman geometry to the growth of HgMnTe. The thrust of the work was directed at the experimental establishment of the limits of magnetic melt stabilization during crystal growth and at the analytical verification of the effects of stabilization on critical materials properties. The data obtained indicate noticeable stabilization effects, particularly as far as the formation of microscopic compositional inhomogeneities is concerned. The effects of magnetic fields on precipitate formation are found to be minor. Magnetic field effects were investigated for both 'Bridgman' and 'travelling heater' geometries. The research was conducted during the period from May 22 to September 30, 1992.

Witt, August F.↗

NASA NTRS1992

Modulation characteristics of a high-power semiconductor Master Oscillator Power Amplifier (MOPA)

A semiconductor master oscillator-power amplifier was demonstrated using an anti-reflection (AR) coated broad area laser as the amplifier. Under CW operation, diffraction-limited single-longitudinal-mode powers up to 340 mW were demonstrated. The characteristics of the far-field pattern were measured and compared to a two-dimensional reflective Fabry-Perot amplifier model of the device. The MOPA configuration was modulated by the master oscillator. Prior to injection into the amplifier, the amplitude and frequency modulation properties of the master oscillator were characterized. The frequency response of the MOPA configuration was characterized for an AM/FM modulated injection beam, and was found to be a function of the frequency detuning between the master oscillator and the resonant amplifier. A shift in the phase was also observed as a function of frequency detuning; this phase shift is attributed to the optical phase shift imparted to a wave reflected from a Fabry-Perot cavity. Square-wave optical pulses were generated at 10 MHz and 250 MHz with diffraction-limited peak powers of 200 mW and 250 mW. The peak power for a given modulation frequency is found to be limited by the injected power and the FM modulation at that frequency. The modulation results make the MOPA attractive for use as a transmitter source in applications such as free-space communications and ranging/altimetry.

Cornwell, Donald Mitchell, Jr.↗

NASA NTRS1993

A multigrid solver for the semiconductor equations

We present a multigrid solver for the exponential fitting method. The solver is applied to the current continuity equations of semiconductor device simulation in two dimensions. The exponential fitting method is based on a mixed finite element discretization using the lowest-order Raviart-Thomas triangular element. This discretization method yields a good approximation of front layers and guarantees current conservation. The corresponding stiffness matrix is an M-matrix. 'Standard' multigrid solvers, however, cannot be applied to the resulting system, as this is dominated by an unsymmetric part, which is due to the presence of strong convection in part of the domain. To overcome this difficulty, we explore the connection between Raviart-Thomas mixed methods and the nonconforming Crouzeix-Raviart finite element discretization. In this way we can construct nonstandard prolongation and restriction operators using easily computable weighted L(exp 2)-projections based on suitable quadrature rules and the upwind effects of the discretization. The resulting multigrid algorithm shows very good results, even for real-world problems and for locally refined grids.

Bachmann, Bernhard↗

NASA NTRS1993

An overview of the measurements of thermophysical properties and some results on molten superalloys and semiconductors

This presentation consists of two parts: comments on the results of measurements on thermophysical properties based on the paper, 'Things Mother Never Taught Me (About Thermophysical Properties of Solids)' and results of thermophysical property measurements on selected solid and molten semiconductors and a proprietary superalloy. The first part may be considered as a tutorial for those involved in using or procuring thermophysical property data. The second part is presented as illustrations of what has been accomplished on molten materials at the Thermophysical Properties Research Laboratory (TPRL). The materials include Ge, PbTe, PbSnTe, HgCdTe and a superalloy.

Taylor, R. E.↗

NASA NTRS1994

Theoretical studies of the transport properties in compound semiconductors

This final report is an overview of the work done on Cooperative Agreement NCC 3-55 with the Solid State Technology Branch of the NASA-Lewis Research Center (LeRC). Over the period of time that the agreement was in effect, the principal investigator and, in the last three years, the co-principal investigator worked on a significant number of projects and interacted with members of the Solid State Technology (SST) branch in a number of different ways. For the purpose of this report, these efforts will be divided into five categories: 1) work directly with experimental electrical transport studies conducted by members of the SST branch; 2) theoretical work on electrical transport in compound semiconductors; 3) electronic structure calculations which are relevant to the electrical transport in polytypes of SiC and SiC-AlN alloys; 4) the electronic structure calculations of polar interfaces; and 5) consultative and supportive activities related to experiments and other studies carried out by SST branch members. Work in these categories is briefly discussed.

Segall, Benjamin↗