Progress in silicon carbide semiconductor technology

Powell, J. A.; Neudeck, P. G.; Matus, L. G.; Petit, J. B.

NASA NTRS · 19930060968

Progress in silicon carbide semiconductor technology

Powell, J. A.·Neudeck, P. G.·Matus, L. G.·Petit, J. B.

Abstract

Silicon carbide semiconductor technology has been advancing rapidly over the last several years. Advances have been made in boule growth, thin film growth, and device fabrication. This paper wi11 review reasons for the renewed interest in SiC, and will review recent developments in both crystal growth and device fabrication.

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Powell, J. A., Neudeck, P. G., Matus, L. G., Petit, J. B.. 1992-01-01. Progress in silicon carbide semiconductor technology. https://ntrs.nasa.gov/citations/19930060968

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