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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 577 records · Page 32
All sourcesNASA NTRSDOE OSTI
NASA NTRS1977

Thick-film materials for silicon photovoltaic cell manufacture

Thick film technology is applicable to three areas of silicon solar cell fabrication; metallization, junction formation, and coating for protection of screened ohmic contacts, particularly wrap around contacts, interconnection and environmental protection. Both material and process parameters were investigated. Printed ohmic contacts on n- and p-type silicon are very sensitive to the processing parameters of firing time, temperature, and atmosphere. Wrap around contacts are easily achieved by first printing and firing a dielectric over the edge and subsequently applying a low firing temperature conductor. Interconnection of cells into arrays can be achieved by printing and cofiring thick film metal pastes, soldering, or with heat curing conductive epoxies on low cost substrates. Printed (thick) film vitreous protection coatings do not yet offer sufficient optical uniformity and transparency for use on silicon. A sprayed, heat curable SiO2 based resin shows promise of providing both optical matching and environmental protection.

Field, M. B.↗
NASA NTRS1977

Solar breeder: Energy payback time for silicon photovoltaic systems

The energy expenditures of the prevailing manufacturing technology of terrestrial photovoltaic cells and panels were evaluated, including silicon reduction, silicon refinement, crystal growth, cell processing and panel building. Energy expenditures include direct energy, indirect energy, and energy in the form of equipment and overhead expenses. Payback times were development using a conventional solar cell as a test vehicle which allows for the comparison of its energy generating capability with the energies expended during the production process. It was found that the energy payback time for a typical solar panel produced by the prevailing technology is 6.4 years. Furthermore, this value drops to 3.8 years under more favorable conditions. Moreover, since the major energy use reductions in terrestrial manufacturing have occurred in cell processing, this payback time directly illustrates the areas where major future energy reductions can be made -- silicon refinement, crystal growth, and panel building.

Lindmayer, J.↗
NASA NTRS1977

Development of standardized specifications for silicon solar cells

A space silicon solar cell assembly (cell and coverglass) specification aimed at standardizing the diverse requirements of current cell or assembly specifications was developed. This specification was designed to minimize both the procurement and manufacturing costs for space qualified silicon solar cell assembilies. In addition, an impact analysis estimating the technological and economic effects of employing a standardized space silicon solar cell assembly was performed.

Scott-Monck, J. A.↗
NASA NTRS1977

Novel duplex vapor-electrochemical method for silicon solar cells

Silicon was produced by alternate pulse feeding of the reactants SiF4 gas and liquid sodium. The average temperature in the reactor could be controlled, by regulating the amount of reactant in each pulse. Silicon tetrafluoride gas was analyzed by mass spectrometry to determine the nature and amount of contained volatile impurities which included silicon oxyfluorides, sulfur oxyfluorides, and sulfur dioxide. Sodium metal was analyzed by emission spectrography, and it was found to contain only calcium and copper as impurities.

Kapur, V. K.↗
NASA NTRS1976

Alternative strategies for implementing silicon-ribbon technology for photovoltaic applications

Interactive computer models are being designed to support the development of technological and economic data required to define the potential of silicon sheet growth for large scale photovoltaic applications. Technology projection and sensitivity analysis suggest that single-ribbon growth systems offer the best potential for achieving low-cost silicon sheet material within the shortest period of time. Such systems must be highly reliable, be capable of near unattended growth, and feature automatic melt replenishment. Processing-technology improvement, such as the following, are the key elements for reducing the cost of silicon sheet material: (i) increasing ribbon width; (ii) speeding up the growth rate; and (iii) decreasing ribbon thickness. Such tasks should be pursued in that order to minimize sheet material cost. One interesting finding is that significant reductions in sheet material cost are achievable in the near future by increasing ribbon width to 5 cm.

Kran, A.↗
NASA NTRS1976

Development of low-cost silicon crystal growth techniques for terrestrial photovoltaic solar energy conversion

Because of the growing need for new sources of electrical energy, photovoltaic solar energy conversion is being developed. Photovoltaic devices are now being produced mainly from silicon wafers obtained from the slicing and polishing of cylindrically shaped single crystal ingots. Inherently high-cost processes now being used must either be eliminated or modified to provide low-cost crystalline silicon. Basic to this pursuit is the development of new or modified methods of crystal growth and, if necessary, crystal cutting. If silicon could be grown in a form requiring no cutting, a significant cost saving would potentially be realized. Therefore, several techniques for growth in the form of ribbons or sheets are being explored. In addition, novel techniques for low-cost ingot growth and cutting are under investigation.

Zoutendyk, J. A.↗
NASA NTRS1979

Chemical-vapor deposition of silicon from silane

Report lists tables of standard free-energy change, equilibrium constant, and heat of reaction for chemical vapor deposition (CVD) of silicon from silane over temperature range of 100 to 1000 K. Data indicates silicon CVD may be a commercially economical process for production of silicon for solar arrays and other applications.

Hsu, G. C.↗
NASA NTRS1977

Developments in vertical-junction silicon solar cells

Non-reflective vertical junction silicon cells provide high conversion efficiency radiation-resistant solar cells. New techniques of oxidation growth and the use of photolithography enable the use of an orientation dependent etch producing grooves 5 to 10 microns wide over 100 microns deep. These silicon wafers are then processed into solar cells with all of the processes performed at temperatures compatible with producing high efficiency solar cells. Most of the photogenerated carriers are created in the walls where they are within a few microns of the collecting junction. Consequently, degradation of carrier diffusion length due to radiation has a considerably reduced effect on collection efficiency. These 2 cm x 2 cm vertical junction silicon solar cells have exceeded 13% AMO efficiency and have shown superior radiation resistance.

Lindmayer, J.↗
NASA NTRS1977

Novel silicon crystals and method for their preparation

Plate shaped silicon crystals and their preparation by pouring a silicon melt into a suitable mold and then allowing it to solidify in a temperature gradient were investigated. The production of energy by direct conversion of solar energy into electrical energy by means of solar cells takes on increasing importance. While this type of energy production is already the prevailing form today in the realm of satellite technology, its terrestrial application has thus far encountered strict limitations owing to the high price of such solar cells. Of the greatest interest in this connection are silicon cells. A substantial reduction in the semiconductor material costs and the costs involved in the further processing to make solar cells are prerequisites for a rational market growth for solar energy.

Authier, B.↗
NASA NTRS1977

High velocity continuous-flow reactor for the production of solar grade silicon

The feasibility of a high volume, high velocity continuous reduction reactor as an economical means of producing solar grade silicon was tested. Bromosilanes and hydrogen were used as the feedstocks for the reactor along with preheated silicon particles which function both as nucleation and deposition sites. A complete reactor system was designed and fabricated. Initial preheating studies have shown the stability of tetrabromosilane to being heated as well as the ability to preheat hydrogen to the desired temperature range. Several test runs were made and some silicon was obtained from runs carried out at temperatures in excess of 1180 K.

Woerner, L.↗
NASA NTRS1976

Some observations on the characteristics of low-cost silicon sheets

To meet the need for low cost silicon sheet material in the ERDA/JPL photovoltaics program, JPL has initiated a wide ranging technology development effort in crystal growth that includes several different technology thrusts. They range in scope from innovative ingot growth and multislice wafering, to shaped growth techniques, substrate-related processes and hot forming techniques. In this paper, some salient observations on materials resulting from these processes are reported. Included are multiblade wafering-induced damage studies, interface morphology studies on the heat exchanger cast silicon, some diffusion length measurements in thin silicon layers on ceramic substrates, and results on the equilibrium structure found in laser zone ribbon growth.

Digges, T. G., Jr.↗
NASA NTRS1976

Experiments to evaluate high-temperature rolling as a low-cost process for silicon solar cells

Mechanical rolling (a process used in industry for producing large quantities of metallic sheet and strip) has been suggested for the rapid low-cost manufacture of silicon sheet to be used for photovoltaic power generation equipment, such as solar arrays. The advantages of rolling include: high rates of production, wide sheets as products, good control of dimension, and (in the case of solar grade silicon) minimal development of impurities. Experiments have been performed using high-temperature, high-speed compression of polycrystalline silicon cylinders. Metallography and X-ray diffraction techniques have been used to examine the samples both before and after compression, and a model process has been designed to evaluate the technical practicality and economic feasibility of the method.

Noel, G. T.↗
NASA NTRS1977

Friction, deformation and fracture of single-crystal silicon carbide

An investigation was conducted to determine the nature of the deformation and fracture of silicon carbide and its effects on friction properties. Friction experiments were conducted with hemispherical and conical diamond riders sliding on the basal plane of silicon carbide. The results indicate that, when deformation is primarily elastic, the friction does not depend on crystallographic orientation and there is no detectable fracture or cracking. When, however, plastic deformation occurs, silicon carbide exhibits anisotropic friction and deformation behavior. Surface fracture crack patterns surrounding wear tracks are observed to be of three types. The crack-geometries of two types are generally independent of orientation, the third crack, however, depends on the orientation. All surface cracks extend into subsurface.

Miyoshi, K.↗
NASA NTRS1978

New developments in silicon solar cells

Three areas of silicon solar cell development are discussed. The first area relates to ultra thin cells about 50 microns in thickness, which can be made with relative good yield and efficiency. The second describes a new effort in vertical junction cells which show increased efficiency and continues to improve. The third area describes our semicrystalline silicon work which resulted in silicon solar cells that show over 10% terrestrial conversion efficiency and are tolerant to impurities.

Lindmayer, J.↗
NASA NTRS1979

Silicon tetrachloride spray feeder

Silicon tetrachloride spray feeder mechanism is incorporated into high-temperature reactor for production of highly pure silicon intended for solar cells. Feeder supplies silicon tetrachloride as liquid droplets that rapidly vaporize in high temperature (2,000 to 2,200 K) reactor zone.

Meyer, T. N.↗
NASA NTRS1978

Lifetime and diffusion length measurements on silicon material and solar cells

Experimental methods were evaluated for the determination of lifetime and diffusion length in silicon intentionally doped with potentially lifetime-degrading impurities found in metallurgical grade silicon, impurities which may be residual in low-cost silicon intended for use in terrestrial flat-plate arrays. Lifetime measurements were made using a steady-state photoconductivity method. Diffusion length determinations were made using short-circuit current measurements under penetrating illumination. Mutual consistency among all experimental methods was verified, but steady-state photoconductivity was found preferable to photoconductivity decay at short lifetimes and in the presence of traps. The effects of a number of impurities on lifetime in bulk material, and on diffusion length in cells fabricated from this material, were determined. Results are compared with those obtained using different techniques. General agreement was found in terms of the hierarchy of impurities which degrade the lifetime.

Othmer, S.↗
NASA NTRS1978

The eight micron band of silicon monoxide in the expanding cloud around VY Canis Majoris

Observations of vibration-rotation transitions of silicon monoxide in VY CMa show that the lines originate in accelerating, expanding, and cool (600 K) layers of a circumstellar cloud at a distance of roughly 0.15 minutes from the central star. The central stellar velocity, as estimated from observed SiO P Cygni line profiles, is somewhat redshifted from the midpoint of the maser emission features. Most of the silicon is probably in the form of dust grains. The isotopic ratios of silicon are nearly terrestrial.

Geballe, T. R.↗
NASA NTRS1979

Friction and wear characteristics of iron-chromium alloys in contact with themselves and silicon carbide

Sliding friction experiments were conducted with various iron-chromium alloys in contact with (1) themselves, (2) single crystal silicon carbide disks, and (3) single crystal abrasive grit of silicon carbide. Results indicate the coefficients of friction for the alloys sliding against themselves are between those for pure iron and pure chromium, and are only slightly different with 1, 5, 9, 14, and 19 weight percent chromium in iron. The wear is due, primarily, to shearing, or tearing fracture, of the cohesive bonds in the bulk metal and plowing of the bulk by lumps of wear debris. There are only slight differences in the coefficients of friction for the various alloys when sliding on silicon carbide. The coefficient of friction for the alloys are higher than those for pure iron and pure chromium. Alloy hardening observed in the alloys plays a dominant role in controlling the abrasive friction and wear behavior of the alloys.

Miyoshi, K.↗