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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 559 records · Page 31
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Device for controlling additive manufacturing machinery

A computing device for controlling the operation of an additive manufacturing machine comprises a memory element and a processing element. The memory element is configured to store a three-dimensional model of a part to be manufactured, wherein the three-dimensional model defines a plurality of cross sections of the part. The processing element is in communication with the memory element. The processing element is configured to receive the three-dimensional model, determine a plurality of paths, each path including a plurality of parallel lines, determine a radiation beam power for each line, such that the radiation beam power varies non-linearly according to a length of the line, and determine a radiation beam scan speed for each line, such that the radiation beam scan speed is a function of a temperature of a material used to manufacture the part, the length of the line, and the radiation beam power for the line.

Barr, Christian↗
DOE OSTI2021

Development of Mission Profiles for Humidity Models in the Reliability Testing of PV Inverters: Preprint

To understand the impacts of humidity on PV inverters, mission profiles were developed to accurately describe the different processes and rates based on the environmental factors of temperature, relative humidity, and irradiance. The operating environment of the device introduces stress factors dependent on component temperature, relative humidity, and component voltage. The development of profiles started from looking at historical climate conditions at Cocoa, Florida, a hot and humid location. The profile developed from field location was compared with existing humidity test profiles in industrial and military standards to determine acceleration factors. Prior to the evaluation of the mission profiles, critical components in the PV inverter were identified based on vendor discussions along with failure modes of interest. The profiles considered in this study was demonstrated using a 4-kVA string inverter. The measurements from the devices were substituted in device manufacturer specified equation to determine the severity of each test. The severity of each test was compared against the severity of the 24-hour result to determine the acceleration factor of each test. The acceleration factors were determined to be over a range of 1.2-6 for the existing humidity tests from standards, when compared against the mission profile developed from field data. This optimal humidity/thermal profile will be passed to the IEC standards development for inverter qualification testing.

humidity models↗
DOE OSTI2021

SENSEI: Characterization of Single-Electron Events Using a Skipper-CCD

We use a science-grade Skipper Charge Coupled Device (Skipper-CCD) operating in a low-radiation background environment to develop a semi-empirical model that characterizes the origin of single-electron events in CCDs. We identify, separate, and quantify three independent contributions to the single-electron events, which were previously bundled together and classified as ``dark counts'': dark current, amplifier light, and spurious charge. We measure a dark current, which depends on exposure, of (5.89+-0.77)x10^-4 e-/pix/day, and an unprecedentedly low spurious charge contribution of (1.52+-0.07)x10^-4 e-/pix, which is exposure-independent. In addition, we provide a technique to study events produced by light emitted from the amplifier, which allows the detector's operation to be optimized to minimize this effect to a level below the dark-current contribution. Our accurate characterization of the single-electron events allows one to greatly extend the sensitivity of experiments searching for dark matter or coherent neutrino scattering. Moreover, an accurate understanding of the origin of single-electron events is critical to further progress in ongoing R&D efforts of Skipper and conventional CCDs.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2022

Achieving American Leadership in the Semiconductors Supply Chain Factsheet

Semiconductors are a keystone technology that are essential for the operation of every electronic device, including those that are critical to a clean energy economy. The semiconductor industry has a complex, competitive, and highly integrated international supply chain in which the United States has historically enjoyed a dominant position, but where this position has been eroding over time. In 1995, 26% of global semiconductor manufacturing capacity was located in the United States; this had decreased to 10% by 2020. Investments in key semiconductor manufacturing technologies such as high-voltage power electronics, energy-efficient conventional devices, and advanced packaging point the way to secure a strong domestic semiconductor industrial base.

Source record↗
DOE OSTI2022

Two-junction photovoltaic devices

The present disclosure relates to a photovoltaic (PV) device that includes a first junction constructed with a first alloy and having a bandgap between about 1.0 eV and about 1.5 eV, and a second junction constructed with a second alloy and having a bandgap between about 0.9 eV and about 1.3 eV, where the first alloy includes III-V elements, the second alloy includes III-V elements, and the PV device is configured to operate in a thermophotovoltaic system having an operating temperature between about 1500° C. and about 3000° C.

Steiner, Myles Aaron↗
DOE OSTI2023

Two-junction photovoltaic devices

The present disclosure relates to a photovoltaic (PV) device that includes a first junction constructed with a first alloy and having a bandgap between about 1.0 eV and about 1.5 eV, and a second junction constructed with a second alloy and having a bandgap between about 0.9 eV and about 1.3 eV, where the first alloy includes III-V elements, the second alloy includes III-V elements, and the PV device is configured to operate in a thermophotovoltaic system having an operating temperature between about 1500° C. and about 3000° C.

Steiner, Myles Aaron↗
DOE OSTI2024

Two-junction photovoltaic devices

The present disclosure relates to a photovoltaic (PV) device that includes a first junction constructed with a first alloy and having a bandgap between about 1.0 eV and about 1.5 eV, and a second junction constructed with a second alloy and having a bandgap between about 0.9 eV and about 1.3 eV, where the first alloy includes III-V elements, the second alloy includes III-V elements, and the PV device is configured to operate in a thermophotovoltaic system having an operating temperature between about 1500° C. and about 3000° C.

Steiner, Myles Aaron↗
DOE OSTI2025

Synthetic-domain computing and neural networks using lithium niobate integrated nonlinear phononics

Analogue computing uses the physical behaviours of devices to provide energy-efficient arithmetic operations. However, scaling up analogue computing platforms by simply increasing the number of devices leads to challenges such as device-to-device variation. Here, in this study, we report scalable analogue computing and neural networks in the synthetic frequency domain using an integrated nonlinear phononic platform on lithium niobate. This synthetic-domain computing is robust to device variations, as vectors and matrices are concurrently encoded at different frequencies within a single device, achieving a high throughput per area. Leveraging inherent nonlinearities, our device-aware neural network can perform a four-class classification task with an accuracy of 98.2%. The nonlinear phononic computing hardware also maintains consistent performance over a wide operational temperature range (characterized up to 192 °C). Our synthetic-domain computing combines single-device parallelism, inherent nonlinearity and environmental stability, and could be of use in edge computing applications in which power efficiency and environmental resilience are crucial.

Ji, Jun [Virginia Polytechnic Inst. and State Univ↗
DOE OSTI2023

Salts as Additives: A Route to Improve Performance and Stability of n-Type Organic Electrochemical Transistors

Organic electrochemical transistors (OECTs) are becoming increasingly ubiquitous in various applications at the interface with biological systems. However, their widespread use is hampered by the scarcity of electron-conducting (n-type) backbones and the poor performance and stability of the existing n-OECTs. Here, we introduce organic salts as a solution additive to improve the transduction capability, shelf life, and operational stability of n-OECTs. We demonstrate that the salt-cast devices present a 10-fold increase in transconductance and achieve at least one year-long stability, while the pristine devices degrade within four months of storage. The salt-added films show improved backbone planarity and greater charge delocalization, leading to higher electronic charge carrier mobility. These films show a distinctly porous morphology where the interconnectivity is affected by the salt type, responsible for OECT speed. The salt-based films display limited changes in morphology and show lower water uptake upon electrochemical doping, a possible reason for the improved device cycling stability. Our work provides a new and easy route to improve n-type OECT performance and stability, which can be adapted for other electrochemical devices with n-type films operating at the aqueous electrolyte interface.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Design of a Robust Memristive Spiking Neuromorphic System with Unsupervised Learning in Hardware

Spiking neural networks (SNN) offer a power efficient, biologically plausible learning paradigm by encoding information into spikes. The discovery of the memristor has accelerated the progress of spiking neuromorphic systems, as the intrinsic plasticity of the device makes it an ideal candidate to mimic a biological synapse. Despite providing a nanoscale form factor, non-volatility, and low-power operation, memristors suffer from device-level non-idealities, which impact system-level performance. To address these issues, this article presents a memristive crossbar-based neuromorphic system using unsupervised learning with twin-memristor synapses, fully digital pulse width modulated spike-timing-dependent plasticity, and homeostasis neurons. Additionally, the implemented single-layer SNN was applied to a pattern-recognition task of classifying handwritten-digits. The performance of the system was analyzed by varying design parameters such as number of training epochs, neurons, and capacitors. Furthermore, the impact of memristor device non-idealities, such as device-switching mismatch, aging, failure, and process variations, were investigated and the resilience of the proposed system was demonstrated.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2024

Systems, methods, and devices for failure detection of one or more energy storage devices

An energy storage device management system can include a management portion for charging/discharging an energy storage device and an ultrasound interrogation portion for passing ultrasound energy through the energy storage device during charge/discharge cycles. A memory stores a stream of capture data instances derived from ultrasound energy exiting the energy storage device and baseline ultrasound data instances corresponding with the energy storage device during normal charging/discharging thereof. A processor can compare each capture data instance with the baseline ultrasound data and detect abnormal operating states of the energy storage device. A warning system can issue a notification when abnormal operating states are detected.

Kowalski, Jeffrey A.↗
DOE OSTI2020

Defect Kinetics and Control for Module Reliability

Potential induced degradation is currently one of the most important module degradation mechanisms. It has been suggested that stacking faults decorated with sodium from the module glass are responsible for this effect and authors have also shown the reversibility of this effect upon reverse biasing of the module. The importance of sodium in the failure mechanism is clear, however, little is known regarding the factors that control its diffusion into the wafer, making it nearly impossible to predict the performance of a given module and engineer it to be better. Sodium migration from module glass into silicon cells and the resulting module degradation is a clear example of how defect kinetics can determine overall module performance and long-term reliability. To the detriment of the industry and its bankability, no quantitative models yet exist to predict defect-assisted module degradation, limiting the progress in improving reliability. In particular, the understanding of defect behavior under high electric fields, under stresses imparted by encapsulation or temperature, and under real operating conditions over long periods of time is a crucial gap in the current state-of-the-art. In this work we developed a Defect-Device-Degradation model to predict defect behavior and its impact on device performance over the module operational lifetime using experimentally-determined defect parameterizations. The validated model will provide a platform for manufacturing process optimization across input materials and architectures to avoid deleterious defects upstream and enable enhanced module robustness.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Frequency-domain computing using nonlinear acoustic-wave device on lithium niobate

Abstract Multiply-accumulation are crucial computing operations in signal processing, numerical simulations, and machine learning. In recent years, optical analog approaches have demonstrated higher computing performance and better power efficiency than their digital counterparts. However, analog computing chips usually need large areas and complex structures for parallel computing, as a single device element only executes one computing operation at a single time. Here, we demonstrate frequency-domain computing using the nonlinear acoustic-wave devices on lithium niobate, featuring a normalized external second-harmonic generation conversion efficiency of ~ 5.7 × 10-4 W-1. The second-order sum-frequency nonlinear process of lithium niobate enables multiplication of inputs encoded in the frequency domain. Compared to the analog schemes, our device features a notably simpler design, and nanofabrication requires only one lift-off. Using a single acoustic-wave device within an area of 0.03 mm2, we can simultaneously conduct over 130,000 multiply-accumulation operations. Our acoustic-wave device shows applications in real and complex vector convolutions and image processing. This demonstration sets the stage for experimental realizations into frequency-domain integrated nonlinear acoustic computing systems, potentially shaping future developments in acoustic neural networks and quantum computing.

chai, mingzhao (ORCID:0009000466226341)↗
DOE OSTI2020

Performance Evaluation of Data-Enhanced Hierarchical Control for Grid Operations

This paper presents a hardware-in-the-loop (HIL) simulation to evaluate the performance of voltage regulation of Data-Enhanced Hierarchical Control (DEHC). This DEHC uses an advanced distribution management system (ADMS) for grid operations to control legacy and grid-edge devices and coordinate with distributed energy management systems (DERMS) to manage high penetrations of photovoltaics (PV) on a utility distribution system. The HIL platform provides realistic laboratory testing, including accurate modeling (legacy devices, grid-edge devices, and PV) of the real-world distribution system from a utility partner, a real controller (ADMS), software controller DERMS, hardware grid-edge devices, and standard communications protocols. The test results demonstrate functionalities of the integrated platform and the performance of voltage regulation of the coordinated control systems. Based on laboratory testing, the utility can set up the same grid-automation system to manage DERs, legacy devices, and grid-edge devices to achieve their system-level control and operation objectives (e.g., voltage regulation), thus de-risking potential issues such as instability for field deployment.

41 EE - Solar Energy Technologies Office (EE-4S)↗
DOE OSTI2023

The Baseline Performance Reference for Irradiance in PV System Applications

This report proposes the definition of a new baseline performance reference (BPR). The definition goes beyond existing standards pertaining to photovoltaic (PV) reference cells and devices to define the response under all possible operating conditions in the field. Field evaluations using BPR devices will be more sensitive to performance anomalies than pyranometers because they track PV system power output more closely. At the same time, they will be able to detect a broader range of performance anomalies than traditional matched reference devices, which might have matching defects. The BPR definition also opens the door to new practices in resource assessment and yield prediction. Solar resource data can be collected or modeled and validated directly as BPR irradiance, and PV system simulations based on BPR irradiance need fewer assumptions and less processing to obtain the effective irradiance on modules. As a result, lower uncertainty in yield assessments can be expected.

14 SOLAR ENERGY↗
DOE OSTI2021

Conducting metal oxides integrated with the surface acoustic wave (SAW) sensor platform

One or more embodiments relates a single port surface acoustic wave sensor (SAW) device adapted for use in a wide range of operational temperatures and gas phase chemical species. The device includes a piezoelectric crystal substrate; at least one interdigitated electrode/transducer (IDT) positioned on the piezoelectric crystal substrate; and at least one conducting metal oxide film positioned on the piezoelectric crystal substrate and in communication with at least the IDT.

Ohodnicki, Jr., Paul R.↗
DOE OSTI2022

Precision Tomography of a Three-Qubit Donor Quantum Processor in Silicon

Nuclear spins were among the first physical platforms to be considered for quantum information processing, because of their exceptional quantum coherence and atomic-scale footprint. However, their full potential for quantum computing has not yet been realized, owing to the lack of methods with which to link nuclear qubits within a scalable device combined with multi-qubit operations with sufficient fidelity to sustain fault-tolerant quantum computation. Here we demonstrate universal quantum logic operations using a pair of ion-implanted 31 P donor nuclei in a silicon nanoelectronic device. A nuclear two-qubit controlled-Z gate is obtained by imparting a geometric phase to a shared electron spin, and used to prepare entangled Bell states with fidelities up to 94.2(2.7)%. The quantum operations are precisely characterized using gate set tomography (GST), yielding one-qubit average gate fidelities up to 99.95(2)%, two-qubit average gate fidelity of 99.37(11)% and two-qubit preparation/measurement fidelities of 98.95(4)%. These three metrics indicate that nuclear spins in silicon are approaching the performance demanded in fault-tolerant quantum processors. We then demonstrate entanglement between the two nuclei and the shared electron by producing a Greenberger-Horne-Zeilinger three-qubit state with 92.5(1.0)% fidelity. Because electron spin qubits in semiconductors can be further coupled to other electrons or physically shuttled across different locations, these results establish a viable route for scalable quantum information processing using donor nuclear and electron spins.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗