DOE OSTI · 2542518
Two-junction photovoltaic devices
Abstract
The present disclosure relates to a photovoltaic (PV) device that includes a first junction constructed with a first alloy and having a bandgap between about 1.0 eV and about 1.5 eV, and a second junction constructed with a second alloy and having a bandgap between about 0.9 eV and about 1.3 eV, where the first alloy includes III-V elements, the second alloy includes III-V elements, and the PV device is configured to operate in a thermophotovoltaic system having an operating temperature between about 1500° C. and about 3000° C.
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Steiner, Myles Aaron, Friedman, Daniel Joseph, France, Ryan Matthew, Henry, Asegun. 2024-08-20. Two-junction photovoltaic devices. https://www.osti.gov/biblio/2542518
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