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At least 559 records · Page 31

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NASA NTRS1981

Performance of candidate SEPS solar cells as a function of low temperature and low intensity exposure and 1 MeV electron irradiation

The behavior of 144 high-performance shallow-junction silicon solar cells under conditions of low temperature and intensity was examined. The cells represented nine combinations of thickness, base resistivity, front surface texture, and rear surface treatment. At least 16 cells of each type were individually tested both as active elements under light levels between 0.04 and 1.0 solar constant and in the dark as passive rectifiers under external forward bias. One cell type was also irradiated with 1 MeV electrons up to 2.7 x 10 to the 15th e/sq cm. The inferior cells demonstrated high ohmic and/or non-ohmic shunting. No series resistance or Schottky barrier effects were observed. Fluences beyond 10 to the 13th e/sq cm lowered cell current, probably by increasing volume recombination.

Whitaker, A. F.↗

NASA NTRS1980

Wavelength-modulated photocapacitance spectroscopy

Derivative deep-level spectroscopy was achieved with wavelength-modulated photocapacitance employing MOS structures and Schottky barriers. The energy position and photoionization characteristics of deep levels of melt-grown GaAs and the Cr level in high-resistivity GaAs were determined. The advantages of this method over existing methods for deep-level spectroscopy are discussed.

Kamieniecki, E.↗

NASA NTRS1980

Minority carrier diffusion lengths and absorption coefficients in silicon sheet material

Most of the methods which have been developed for the measurement of the minority carrier diffusion length of silicon wafers require that the material have either a Schottky or an ohmic contact. The surface photovoltage (SPV) technique is an exception. The SPV technique could, therefore, become a valuable diagnostic tool in connection with current efforts to develop low-cost processes for the production of solar cells. The technique depends on a knowledge of the optical absorption coefficient. The considered investigation is concerned with a reevaluation of the absorption coefficient as a function of silicon processing. A comparison of absorption coefficient values showed these values to be relatively consistent from sample to sample, and independent of the sample growth method.

Dumas, K. A.↗

NASA NTRS1982

Integrated Submillimeter-Wave Mixer

Indium arsenide Schottky-Barrier diodes in gallium antimonide substrate mix submillimeter waves, producing much lower frequency output. Integrated diode array has relatively-high signal-to-noise ratio and wide frequency band. Operates at moderate cryogenic temperatures (100 K).

Maserjian, J.↗

NASA NTRS1981

Bypass diode integration

Protective bypass diodes and mounting configurations which are applicable for use with photovoltaic modules having power dissipation requirements in the 5 to 50 watt range were investigated. Using PN silicon and Schottky diode characterization data on packaged diodes and diode chips, typical diodes were selected as representative for each range of current carrying capacity, an appropriate heat dissipating mounting concept along with its environmental enclosure was defined, and a thermal analysis relating junction temperature as a function of power dissipation was performed. In addition, the heat dissipating mounting device dimensions were varied to determine the effect on junction temperature. The results of the analysis are presented as a set of curves indicating junction temperature as a function of power dissipation for each diode package.

Shepard, N. F., Jr.↗

NASA NTRS1982

Optically pumped submillimeter-waves and applications

Rapid development of optically pumped lasers has shown the potential to be used as a source for a high resolution spectrometer. In this connection, a compact, stable FIR laser was designed, fabricated, and assembled, integrating both the pump laser and the FIR cavity in the same mechanical structure for its improved (both thermal and mechanical) stability and mobility. Performance of the mixer structure which was designed and constructed for the evaluation of the Schottky diodes was found to be satisfactory. The feasibility of generating tunable sideband for molecular spectroscopy studies was demonstrated.

Dutta, J. M.↗

NASA NTRS1982

IMPATT power building blocks for 20 GHz spaceborne transmit amplifier

Single-stage circulator coupled IMPATT building block constituents of a 20-GHz solid state power amplifier (SSPA) currently under development for spaceborne downlink transmitter usage have been demonstrated as providing 1.5 to 2.0W RF power output at 4 to 5 dB operating gain over a 1 GHz bandwidth. Using either commercially available or recently developed in-house GaAs Schottky Read-profile IMPATT diodes, DC/RF power added efficiencies of 14 to 15% were achieved in these amplifier stages. A two stage IMPATT driver amplifier with similar RF output power capability exhibited 13 + or - 0.5 dB operating gain over a 1 GHz bandwidth.

Asmus, J.↗

NASA NTRS1982

Improved whisker pointing technique for micron-size diode contact

Pointed phosphor-bronze whiskers are commonly used to contact micron-size Schottky barrier diodes. A process is presented which allows pointing such wire and achieving the desired cone angle and tip diameter without the use of highly undesirable chemical reagents.

Mattauch, R. J.↗

NASA NTRS1982

Surface morphology of erbium silicide

The surface of rare-earth silicides (Er, Tb, etc.), formed by the reaction of thin-film metal layers with a silicon substrate, is typically dominated by deep penetrating, regularly shaped pits. These pits may have a detrimental effect on the electronic performance of low Schottky barrier height diodes utilizing such silicides on n-type Si. This study suggests that contamination at the metal-Si or silicide-Si interface is the primary cause of surface pitting. Surface pits may be reduced in density or eliminated entirely through either the use of Si substrate surfaces prepared under ultrahigh vacuum conditions prior to metal deposition and silicide formation or by means of ion irradiation techniques. Silicide layers formed by these techniques possess an almost planar morphology.

Lau, S. S.↗

NASA NTRS1982

Collisional narrowing in the optically pumped CH3OH and CH3F lasers

The gain linewidth of the optically pumped CH3F laser is observed to narrow and rebroaden with the addition of He. In addition, the same effect is observed in the CH3OH laser with the addition of the polyatomic buffer gases SF6 and CS2. These results offer conclusive evidence of the Dicke narrowing phenomena in these inverted pure rotational transitions. The effect is observed using a high harmonic mixing technique in a Schottky barrier diode.

Lawandy, N. M.↗

NASA NTRS1981

Ground-based mm-wave emission spectroscopy for the detection and monitoring of stratospheric ozone

The molecular rotational spectrum of ozone is quite rich in the mm-wave region from 50 to 300 GHz. An apparatus, which was developed primarily for detection and measurement of stratospheric ClO and other trace molecules, is found to be well suited also for the observation of ozone lines. The collecting antenna of the apparatus is a simple mm-waveguide feedhorn. The detector is a superheterodyne mixer using a special high frequency Schottky diode and a klystron local oscillator. The spectrometer is a 256 channel filter bank with 1 MHz resolution per channel. The apparatus is believed to be the first ground-based mm-wave instrument having the capability of obtaining data of sufficient quality to make use of the inversion technique. The ground based radio technique is most sensitive to changes in vertical distribution in the region above 25 km, a region which is difficult to sample by other techniques.

Parrish, A.↗

NASA NTRS1982

Imaging antenna arrays

Many millimeter and far-infrared imaging systems are limited in sensitivity and speed because they depend on a single scanned element. Because of recent advances in planar detectors such as Schottky diodes, superconducting tunnel junctions, and microbolometers, an attractive approach to this problem is a planar antenna array with integrated detectors. A planar line antenna array and optical system for imaging has been developed. The significant advances are a 'reverse-microscope' optical configuration and a modified bow-tie antenna design. In the 'reverse-microscope' configuration, a lens is attached to the bottom of the substrate containing the antennas. Imaging is done through the substrate. This configuration eliminates the troublesome effects of substrate surface waves. The substrate lens has only a single refracting surface, making possible a virtually aplanatic system, with little spherical aberration or coma. The array is characterized by an optical transfer function that is easily measured. An array with 19 dB crosstalk levels between adjacent antennas has been tested and it was found that the array captured 50 percent of the available power. This imaging system was diffraction limited.

Rutledge, D. B.↗

NASA NTRS1983

Printed Circuit Converts RF Energy to dc Power

Ultra-light-weight, large area, antenna/rectifier has 85 percent conversion efficiency. System consists of large number of repetitive circuits called "rectenna elements." Each element produces 2 W of power, comprises half-wave dipole, input filter, and Schottky barrier dipole. Two-wire microwave transmission lines act as dc power collecting buses.

Triner, J.↗

NASA NTRS1982

Preliminary submillimeter spectroscopic measurements using a submillimeter heterodyne radiometer

A submillimeter heterodyne radiometer uses a submillimeter laser, pumped by a CO2 laser, as a local oscillator and a room temperature Schottky barrier diode as the first IF mixer. The radiometer can resolve spectral lines in the submillimeter region of the spectrum (arising from pure rotational molecular transitions) to within 0.3 MHz, using acousto-optic spectrum analyzer which measures the power spectrum by simultaneously sampling 0.3 MHz wide channels over a 100 MHz bandwidth spanning the line. Preliminary observations of eight spectral lines of H2O2, CO, NH3 and H2O, all lying in the 434-524 micrometer wavelength range are described. All eight lines were observed using two local oscillator frequencies obtained by operating the submillimeter laser with either methyl fluoride (CH3F) or formic acid (HCOOH) as the lasing gas. Sample calculations of line parameters from the observed data show good agreement with established values. One development goal is the size and weight reduction of the package to make it suitable for balloon or shuttle experiments to detect trace gases in the upper atmosphere.

Safren, H. G.↗

NASA NTRS1983

Thin wire pointing method

A method is described for forming sharp tips on thin wires, in particular phosphor bronze wires of diameters such as one-thousandth inch used to contact micron size Schottky barrier diodes, which enables close control of tip shape and which avoids the use of highly toxic solutions. The method includes dipping an end of a phosphor bronze wire into a dilute solution of sulfamic acid and applying a current through the wire to electrochemically etch it. The humidity in the room is controlled to a level of less than 50%, and the voltage applied between the wire and another electrode in the solutions is a half wave rectified voltage. The current through the wire is monitored, and the process is stopped when the current falls to a predetermined low level.

Green, G.↗

NASA NTRS1983

TEM and SEM (EBIC) investigations of silicon bicrystals

The electrical and structural properties of low and medium angle tilt grain boundaries in silicon bicrystals were studied in order to obtain insight into the mechanisms determining the recombination activity. The electrical behavior of these grain boundaries was studied with the EBIC technique. Schottky barriers rather than p-n junctions were used to avoid annealing induced changes of the structure and impurity content of the as-grown crystals. Transmission electron spectroscopy reveals that the 20 deg boundary is straight, homogeneous, and free of extrinsic dislocations. It is concluded that, in the samples studied, the electrical effect of grain boundaries appears to be independent of the boundary misorientation. The dominant influence appears to be impurity segregation effects to the boundary. Cleaner bicrystals are required to study intrinsic differences in the electrical activity of the two boundaries.

Gleichmann, R.↗

NASA NTRS1982

Scanning delay generator for measurement of kinetic decays using laser-induced fluorescence techniques

An electronic device is described which generates a delayed pulse, where the delay is increased in a step-like manner. This device finds application in the measurement of kinetic decays, particularly when laser-induced fluorescent (LIF) detection of the decaying species is used. The circuit uses 15 low-power Schottky TTL chips and is contained within a dual width NIM module.

Halpern, J. B.↗

NASA NTRS1981

433 micron laser heterodyne observations of galactic CO from Mauna Kea

A submillimeter heterodyne radiometer, developed for astronomical applications, uses an optically pumped laser local oscillator and a quasi-optical Schottky diode mixer. The resultant telescope-mounted system, which has a noise temperature less than 4000 K (double sideband) and high frequency and spatial resolution, has been used to detect the J = 6 to 5 rotational transition of carbon monoxide at 434 micrometers in the Orion molecular clouds. The measurements, when compared with previous millimeter-wave data, indicate that the broad carbon monoxide emission feature is produced by an optically thin gas whose temperature exceeds 180 K.

Buhl, D.↗