NASA NTRS · 19810048192
Wavelength-modulated photocapacitance spectroscopy
Abstract
Derivative deep-level spectroscopy was achieved with wavelength-modulated photocapacitance employing MOS structures and Schottky barriers. The energy position and photoionization characteristics of deep levels of melt-grown GaAs and the Cr level in high-resistivity GaAs were determined. The advantages of this method over existing methods for deep-level spectroscopy are discussed.
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Kamieniecki, E., Lagowski, J., Gatos, H. C.. 1980-03-01. Wavelength-modulated photocapacitance spectroscopy. https://ntrs.nasa.gov/citations/19810048192
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