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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 559 records · Page 31
All sourcesNASA NTRSDOE OSTI
NASA NTRS1975

Theoretical transducer properties of piezoelectric insulator FET transducers

An oriented piezoelectric film incorporated in the insulator region of a silicon insulated-gate field-effect transistor (FET) results in a sensitive high-frequency strain transducer. Theory governing the transducer properties of the piezoelectric insulator FET transducer is presented. Equations are developed which relate the drain current of the device to induced polarizations of the piezoelectric layer. The highest frequency of surface strains to which the FET transducer can respond is determined by the FET frequency response - ultimately by the channel transit time. This frequency can extend to the GHz range. The low-frequency response to applied strain is determined by the dielectric relaxation frequency of the piezoelectric layer.

Greeneich, E. W.↗
NASA NTRS1976

Analysis of bilinear noise models in circuits and devices

There are a number of applications in which linear noise models are inappropriate. In the paper, the use of bilinear noise models in circuits and devices is considered. Several physical problems are studied in this framework. These include circuits involving varying parameters (such as variable resistance circuits constructed using field-effect transistors), the effect of switching jitter on sampled data system performance and communication systems involving voltage-controlled oscillators and phase-lock loops. In addition, several types of analytical techniques for stochastic bilinear systems are considered. Specifically, the moment equations of Brockett for bilinear systems driven by white noise are discussed, and closed-form expressions for certain bilinear systems (those that evolve an Abelian or solvable Lie groups) driven by white or colored noise are derived. In addition, an approximate statistical technique involving the use of harmonic expansions is described.

Willsky, A. S.↗
NASA NTRS1977

Differential multi-MOSFET nuclear radiation sensor

Circuit allows minimization of thermal-drift errors, low power consumption, operation over wide dynamic range, improved sensitivity and stability with metaloxide-semiconductor field-effect transistor sensors.

Deoliveira, W. A.↗
NASA NTRS1977

Precision voltage division without precision parts

Active voltage divider applies different logic signals to field-effect transistor switches to generate various voltage levels at output. Circuit is compact and reduces errors from drifting component values.

Strange, M. G.↗
NASA NTRS1976

Characterization of IRAS doped silicon detectors

Data are presented from a range of operating conditions which include background photo flux, operating temperature, and frequency. Each detector is equipped with a load resistor, a cryogenic field effect transistor preamplifier, and a temperature sensor. Data are also presented of detector signal, noise spectra, noise equivalent power, and spectral response.

Source record↗
NASA NTRS1977

Frequency modulated oscillator

A frequency modulated push-pull oscillator in which the non-linear characteristic of varactors producing frequency modulation is compensated for by an opposite non-linear characteristic of a field effect transistor providing modulating bias to the varactors is described.

Honnell, M. A.↗
NASA NTRS1978

Symmetric voltage-controlled variable resistance

Feedback network makes resistance of field-effect transistor (FET) same for current flowing in either direction. It combines control voltage with source and load voltages to give symmetric current/voltage characteristics. Since circuit produces same magnitude output voltage for current flowing in either direction, it introduces no offset in presense of altering polarity signals. It is therefore ideal for sensor and effector circuits in servocontrol systems.

Vanelli, J. C.↗
NASA NTRS1977

Properties of TiO2 thin films and a study of the TiO2-GaAs interface

Titanium dioxide (TiO2) films prepared by chemical vapor deposition were investigated in this study for the purpose of the application in the GaAs metal-insulator-semiconductor field-effect transistor. The degree of crystallization increases with the deposition temperature. The current-voltage study, utilizing an Al-TiO2-Al MIM structure, reveals that the d-c conduction through the TiO2 film is dominated by the bulk-limited Poole-Frenkel emission mechanism. The dependence of the resistivity of the TiO2 films on the deposition environment is also shown. The results of the capacitance-voltage study indicate that an inversion layer in an n-type substrate can be achieved in the MIS capacitor if the TiO2 films are deposited at a temperature higher than 275 C. A process of low temperature deposition followed by the pattern definition and a higher temperature annealing is suggested for device fabrications. A model, based on the assumption that the surface state densities are continuously distributed in energy within the forbidden band gap, is proposed to interpret the lack of an inversion layer in the Al-TiO2-GaAs MIS structure with the TiO2 films deposited at 200 C.

Chen, C. Y.↗
NASA NTRS1977

Adaptation of ion beam technology to microfabrication of solid state devices and transducers

It was found that ion beam texturing of silicon surfaces can be used to increase the effective surface area of MOS capacitors. There is, however, a problem with low dielectric breakdown. Preliminary work was begun on the fabrication of ion implanted resistors on textured surfaces and the potential improvement of wire bond strength by bonding to a textured surface. In the area of ion beam sputtering, the techniques for sputtering PVC were developed. A PVC target containing valinomycin was used to sputter an ion selective membrane on a field effect transistor to form a potassium ion sensor.

Topich, J. A.↗
NASA NTRS1980

Limiting amplifier for microwaves

Limiting amplifier, using gallium arsenide field effect transistor (FET), delivers constant-amplitude drive signal to KU-band traveling wave tube (TWT) thus preventing distortion in output from TWT.

Owens, J. N.↗
NASA NTRS1980

Progress in MOSFET double-layer metalization

Report describes one-year research effort in VLSL fabrication. Four activities are described: theoretical study of two-dimensional diffusion in SOS (silicon-on-sapphire); setup of sputtering system, furnaces, and photolithography equipment; experiments on double layer metal; and investigation of two-dimensional modeling of MOSFET's (metal-oxide-semiconductor field-effect transistors).

Gassaway, J. D.↗
NASA NTRS1980

RFI receiver

An S-band radio frequency interference (RFI) receiver to analyze and identify sources of RFI problems in the Deep Space Network DSN tracking stations is described. The RFI receiver is a constant gain, double conversion, open loop receiver with dual sine/cosine channel outputs, providing a total of 20 MHZ monitoring capability. This receiver is computer controlled using a MODCOMP II miniprocessor. The RFI receiver has been designed to operate at a 150 Kelvin system noise temperature accomplished by cascading two low noise field effect transistor (FET) amplifiers for the receiver front-end. The first stage low noise FET amplifier is mounted at the feed horn to minimize any cable losses to achieve a lower system noise temperature. The receiver is tunable over the frequency range of 2150 to 2450 MHz in both sine/cosine output channels with a resolution of 100 kHz.

Lay, R.↗
NASA NTRS1980

Research on design feasibility of high-power light-weight dc-to-dc converters for space power application

The development of 5 kW converters with 100 kHz switching frequencies, consisting of two submodules each capable of 2.5 kW of output power, is discussed. Two semiconductor advances allowed increased power levels. Field effect transistors with ratings of 11 A and 400 V were operated in parallel to provide a converter output power of approximately 2000 W. Secondly, bipolar power switching transistor was operated in conjunction with a turn-off snubber circuit to provide converter output power levels approaching 1000 W. The interrelationships between mass, switching frequency, and efficiency were investigated. Converters were constructed for operation at a maximum output power level of 200 W, and a comparison was made for operation under similar input/output conditions for conversion frequencies of 20 kilohertz and 100 kilohertz. The effects of nondissipative turn-off snubber circuitry were also examined. Finally, a computerized instrumentation system allowing the measurement of pertinent converter operating conditions as well as the recording of converter waveforms is described.

Wilson, T. G.↗
NASA NTRS1980

Modified Reference SPS with Solid State Transmitting Antenna

The development of solid state microwave power amplifiers for a solar power satellite transmitting antenna is discussed. State-of-the-art power-added efficiency, gain, and single device power of various microwave solid state devices are compared. The GaAs field effect transistors and the Si-bipolar transistors appear potentially feasible for solar power satellite use. The integration of solid state devices into antenna array elements is examined and issues concerning antenna integration and consequent satellite configurations are examined.

Woodcock, G. R.↗
NASA NTRS1980

Solid state device technology for Solar Power Satellite

The feasibility of using solid state elements in the solar power satellite transmitter system is addressed. Recommendations are given concerning device types, the antenna modules, and the overall antenna system. The development of a solid state amplifier based on GaAs field effect transistor devices is also described.

Weir, D. G.↗
NASA NTRS1981

High sensitivity operation of discrete solid state detectors of 4 K

Techniques are described to allow operation of discrete solid state detectors at 4 K with optimized junction field effect transistor (JFET) amplifiers. Three detector types cover the 0.6-4 micron spectral range with a noise equivalent power (NEP) of approximately 10 to the -16th per sq rt Hz for two of the types and potential improvement to this performance for the third. Lower NEPs can be anticipated at longer IR wavelengths.

Rieke, G. H.↗
NASA NTRS1982

Flip-Chip Carrier Would Match Microwave FET Impedances

Proposed field-effect transistor consists of three cells which make up one complete FET pellet. Pellet is flip-chip mounted on carrier with source grounded gate and drain posts connected directly to impedance-matching transmission-line segments. Impedance transformers are part of mounting and contact strips.

Huang, H. C.↗
NASA NTRS1983

Solid State Circuits for Cryogenic Operation

Tests confirm operation of five commercial semiconductor devices at cryogenic temperatures. The five devices - one tunnel diode, one field-effect transistor, and three CMOS integrated circuits - all perform well in circuits immersed in liquid-helium bath. For some tests, bath temperature was reduced to 1,25K by pumping.

Petrac, D.↗