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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 541 records · Page 30
All sourcesNASA NTRSDOE OSTI
NASA NTRS1979

Large Area Crop Inventory Experiment (LACIE). Development of procedure M for multicrop inventory, with tests of a spring-wheat configuration

The author has identified the following significant results. An outgrowth of research and development activities in support of LACIE was a multicrop area estimation procedure, Procedure M. This procedure was a flexible, modular system that could be operated within the LACIE framework. Its distinctive features were refined preprocessing (including spatially varying correction for atmospheric haze), definition of field like spatial features for labeling, spectral stratification, and unbiased selection of samples to label and crop area estimation without conventional maximum likelihood classification.

Horvath, R.↗
NASA NTRS1979

LSA Large Area Silicon Sheet Task Continuous Czochralski Process Development

A commercial Czochralski crystal growing furnace was converted to a continuous growth facility by installation of a small, in-situ premelter with attendant silicon storage and transport mechanisms. Using a vertical, cylindrical graphite heater containing a small fused quartz test tube linear from which the molten silicon flowed out the bottom, approximately 83 cm of nominal 5 cm diamter crystal was grown with continuous melt addition furnished by the test tube premelter. High perfection crystal was not obtained, however, due primarily to particulate contamination of the melt. A major contributor to the particulate problem was severe silicon oxide buildup on the premelter which would ultimately drop into the primary melt. Elimination of this oxide buildup will require extensive study and experimentation and the ultimate success of continuous Czochralski depends on a successful solution to this problem. Economically, the continuous Czochralski meets near-term cost goals for silicon sheet material.

Rea, S. N.↗
NASA NTRS1979

Laser-zone Growth in a Ribbon-to-ribbon (RTR) Process Silicon Sheet Growth Development for the Large Area Silicon Sheet Task of the Low Cost Solar Array Project

A technique for growing limited-length ribbons continually was demonstrated. This Rigid Edge technique can be used to recrystallize about 95% of the polyribbon feedstock. A major advantage of this method is that only a single, constant length silicon ribbon is handled throughout the entire process sequence; this may be accomplished using cassettes similar to those presently in use for processing Czochralski waters. Thus a transition from Cz to ribbon technology can be smoothly affected. The maximum size being considered, 3 inches x 24 inches, is half a square foot, and will generate 6 watts for 12% efficiency at 1 sun. Silicon dioxide has been demonstrated as an effective, practical diffusion barrier for use during the polyribbon formation.

Baghdadi, A.↗
NASA NTRS1979

Large Area Crop Inventory Experiment (LACIE). An early estimate of small grains acreage

The author has identified the following significant results. A major advantage of this scheme is that it needs minimal human intervention. The entire scheme, with the exception of the choice of dates, can be computerized and the results obtained in minutes. The decision to limit the number of acquisitions processed to four was made to facilitate operation on the particular computer being used. Some earlier runs on another computer system were based on as many as seven biophase-1 acquisitions.

Lea, R. N.↗
NASA NTRS1979

Continuous Czochralski Growth. Silicon Sheet Growth Development of the Large Area Silicon Sheet Task of the Low Cost Silicon Solar Array Project

During the reporting period, a successful 100 kilogram run was performed. Six ingots of 13 cm diameter were grown, ranging in size from 15.5 kg to 17.7 kg. Melt replenishment methods included both poly rod and lump feed material. Samples from each ingot were prepared for solar cell fabrication and analyses, impurity analysis, and structural studies. The furnace was converted to the 14-inch hot zone and preliminary heat runs were performed. Two sucessful runs were demonstrated, by growing 25 kg ingots from 30 kg melts. Also, a 100 kg run was attempted, utilizing the 14 inch crucible hot zone, but was prematurely terminated due to excessive monoxide which accumulated on the viewports and a seed failure.

Merz, F.↗
NASA NTRS1979

Large Area Silicon Sheet by EFG

Influences on ribbon quality which might be caused by various materials of construction which are used in the growth furnace were assessed. At the present level of ribbon quality, which has produced 8.5% to 9.5% efficient solar cells, no particular influence of any furnace part was detected. The experiments led to the suspicion that the general environment and the somewhat unoptimized materials handling procedures might be responsible for the current variations in ribbon quality and that, therefore, continuous work with this furnace under rather more stringent environmental conditions and operating procedures could perhaps improve materials quality to some extent. The work on the multiple furnace was continued with two multiple growth runs being performed. In these runs, the melt replenishment system performed poorly and extensive modifications to it were designed to make reliable melt feeding for five ribbon growth possible. Additional characterization techniques for wide ribbons, stress measurements, and growth dynamics experiments are reported.

Source record↗
NASA NTRS1979

LSA Large Area Silicon Sheet Task. Continuous Liquid Feed Czochralski Growth

The design and development of equipment and processes to demonstrate continuous growth of crystals by the Czochralski method suitable for producing single silicon crystals for use in solar cells is presented. The growth of at least 150 kg of mono silicon crystal, 150 mm in diameter is continuous from one growth container. A furnace with continuous liquid replenishment of the growth crucible, accomplished by a meltdown system with a continuous solid silicon feed mechanism and a liquid transfer system, with associated automatic feedback controls is discussed. Due to the silicon monoxide build up in the furnace and its retarding effect on crystal growth the furnace conversion for operation in the low pressure range is described. Development of systems for continuous solid recharging of the meltdown chamber for various forms of poly silicon is described.

Fiegl, G.↗
NASA NTRS1979

LSA Large Area Silicon Sheet Task Enhanced I.D. Slicing Technology for Silicon Ingots

Development of inside diameter slicing technology to significantly increase the number of useable slices per inch of crystal over industry practice is discussed. The required reduction of both blade and slice thickness is to be accomplished by a combination of three key elements of slicing technology: (1) ingot rotation with minimum exposed blade area; (2) dynamic cutting edge control; and (3) the use of prefabricated insert blades. Design modifications on a slicing saw with microprocessor controls and hardware fabrication to complete this conversion were initiated. Several runs were conducted on the engineering saw incorporating the method of ingot rotation. Ingots with diameters up to six inches were sliced successfully on a production saw.

Walters, D.↗
NASA NTRS1978

Large area silicon sheet by EFG

The edge-defined, film-fed growth (EFG) technique has been employed to grow silicon ribbons for photovoltaic applications. Considerable progress has been made in recent years in developing the technique to the point that long lengths of silicon ribbon can be routinely grown. In order to attain the full low-cost potential of the EFG technique, several further developments such as the growth of thinner and wider ribbons, increase in ribbon growth rate, and improvements in material quality are needed. The technological problems to be solved and the approaches employed to achieve these goals are discussed.

Rao, C. V. H.↗