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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 541 records · Page 30
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Trends and Heterogeneity in Electric Vehicle Economics: A French Case Study

The total cost of ownership of electric vehicles depends on both the behavior and economic context of the driver as well as the level of government support offered for electrified vehicles. In this work, we study both of these effects as they shift private vehicle costs and emissions benefits, focused on a case study of the faculty and staff commuters to the Cite Scientifique campus of the University of Lille. The modeling approach considers the net costs and emissions from switching each driver from an internal combustion engine vehicle to three electrified options: a hybrid electric, a plug-in hybrid, and a pure battery electric. Increasing government support or technology-induced cost declines of electric vehicles both improve the economics of electrified options and shift more drivers towards battery electrics as the preferred alternative to thermal vehicles.

ADVANCED PROPULSION SYSTEMS,ENERGY PLANNING, POLIC↗
DOE OSTI2026

Spatiotemporal Thermal Coupling in VO 2 Device Arrays

Correlated oxides such as VO 2 exhibit an electrically driven insulator–metal transition (IMT) that underlies their promise for neuromorphic and memory devices. Yet the IMT is not a uniform bulk process but a spatiotemporal phenomenon in which local heating nucleates filaments, contracts or dissolves them with the electric field, and couples to the environment. In this work, we directly image the VO 2 IMT dynamics by mid-wave infrared, thermography synchronized with electrical transport, resolving device temperature with micrometer spatial and microsecond temporal resolution. At the single-device level, we capture the full cycle of filament nucleation, contraction, and relaxation during current/voltage-driven resistive switching. At the array level, we show that heat propagates across etched gaps with an effective length scale of ∼131 µm, enabling cooperative behaviors among electrically isolated devices. Short-range distanced devices exhibit mutual filament attraction and sequential dissolution, while long-range distanced devices differentiate into distinct roles: drivers that initiate switching, cooperative responders that undergo assisted self-oscillations, and passive reporters that record the thermal field. Furthermore, these results reframe thermal crosstalk, long regarded as parasitic, as an intrinsic coupling channel and design principle for organizing collective switching behaviors, with direct implications for emergent circuit functionality in neuromorphic and unconventional computing architectures.

coupling↗
NASA NTRS2003

Could Zinc Whiskers Be Impacting Your Electronic Systems? Raise Your Awareness

During the past several decades electrical short circuits induced by "Zinc Whiskers" have been cited as the root cause of failure for various electronic systems (e.g., apnea monitors, telecom switches). These tiny filaments of zinc that may grow from some zinc-coated items (especially those coated by electroplating processes) have the potential to induce electrical shorts in exposed circuitry. Through this article, the authors describe a particular failure scenario attributed to zinc whiskers that has affected many facilities (including some NASA facilities) that utilized zinc-coated raised "access" floor tiles and support structures. Zinc whiskers that may be growing beneath your raised floor have the potential to wreak havoc on electronic systems operating above the floor.

Sampson, Michael↗
DOE OSTI2021

Observation of current-induced switching in non-collinear antiferromagnetic IrMn 3 by differential voltage measurements

There is accelerating interest in developing memory devices using antiferromagnetic (AFM) materials, motivated by the possibility for electrically controlling AFM order via spin-orbit torques, and its read-out via magnetoresistive effects. Recent studies have shown, however, that high current densities create non-magnetic contributions to resistive switching signals in AFM/heavy metal (AFM/HM) bilayers, complicating their interpretation. Here we introduce an experimental protocol to unambiguously distinguish current-induced magnetic and nonmagnetic switching signals in AFM/HM structures, and demonstrate it in IrMn 3 /Pt devices. A six-terminal double-cross device is constructed, with an IrMn 3 pillar placed on one cross. The differential voltage is measured between the two crosses with and without IrMn 3 after each switching attempt. For a wide range of current densities, reversible switching is observed only when write currents pass through the cross with the IrMn 3 pillar, eliminating any possibility of non-magnetic switching artifacts. Micromagnetic simulations support our findings, indicating a complex domain-mediated switching process.

36 MATERIALS SCIENCE↗
DOE OSTI2024

NMPC for Mode-Switching Operation of Reversible Solid Oxide Cell Systems

Solid oxide cells (SOCs) are a promising dual-mode technology that generates hydrogen through high-temperature water electrolysis and generates power through a fuel cell reaction that consumes hydrogen. Reversible operation of SOCs requires a transition between these two modes for hydrogen production setpoints as the demand and price of electricity fluctuate. Moreover, a well-functioning control system is important to avoid cell degradation during mode-switching operation. In this work, we apply nonlinear model predictive control (NMPC) to an SOC module and supporting equipment and compare NMPC performance to classical proportional integral (PI) control strategies, while ramping between the modes of hydrogen and power production. While both control methods provide similar performance in many metrics, NMPC significantly reduces cell thermal gradients and curvatures (mixed spatial-temporal partial derivatives) during mode switching. A dynamic process flowsheet of the reversible SOC system was developed in the open-source, equation-based IDAES modeling framework. Our IDAES dynamic simulation results show that NMPC can ramp the SOC system between hydrogen and power production targets within short mode-switching times. Moreover, NMPC can comply with operating limits in the SOC system more effectively than PI, and only NMPC can directly enforce user-specified limits for mixed spatial-temporal partial derivatives of temperature. This allows for management of the trade-off be-tween operating efficiency and cell degradation, which is dependent on these temperature curvatures.

Li, Mingrui↗
DOE OSTI2020

Smart and Efficient Building Envelopes: Thermal Switches and Thermal Storage for Energy Savings and Load Flexibility

The building envelope has traditionally been seen as a static component. Much of the past thermal advancements in building envelopes has consisted of developing higher R/inch insulation. While a suitable approach for static situations, it does not consider the dynamic nature of the ambient environment or the varying needs of the electrical grid. This paper will examine three possible ways that building envelopes can be actively managed: 1. thermal switches, 2. thermal storage, and 3. the coupling of the two. Spurring innovation to make building envelopes smarter will help reduce building energy consumption and peak energy usage and contribute to flexibility in energy demand in the future.

Mumme, Sven↗
DOE OSTI2022

Enhancing the metal–insulator transition in VO 2 heterostructures with graphene interlayers

In this work, studies were conducted on epitaxial VO 2 thin films to assess to the effect of remote epitaxy on the metal–insulator transition (MIT). The epitaxial VO 2 heterostructures were synthesized on both bare Al 2 O 3 (0001) substrates and Al 2 O 3 substrates coated with two monolayer-thick graphene. While both systems exhibit the MIT, the film grown by remote epitaxy on graphene demonstrates improved transport properties. Electrical transport measurements show that the on/off ratio is enhanced by a factor of ~7.5 and the switching temperature window is narrower for VO 2 thin films grown on graphene. By characterizing the heterostructures with a suite of structural, chemical, and spectroscopic tools, we find that the graphene interlayer inhibits oxygen vacancy diffusion from Al 2 O 3 (0001) during the VO 2 growth, resulting in improved electrical behavior at the MIT.

36 MATERIALS SCIENCE↗
NASA NTRS1979

Development and fabrication of improved power transistor switches

A new class of high-voltage power transistors was achieved by adapting present interdigitated thyristor processing techniques to the fabrication of npn Si transistors. Present devices are 2.3 cm in diameter and have V sub CEO (sus) in the range of 400 to 600V. V sub CEO (sus) = 450V devices were made with an (h sub FE)(I sub C) product of 900A at V sub CE = 2.5V. The electrical performance obtained was consistent with the predictions of an optimum design theory specifically developed for power switching transistors. The device design, wafer processing, and assembly techniques are described. Experimental measurements of the dc characteristics, forward SOA, and switching times are included. A new method of characterizing the switching performance of power transistors is proposed.

Hower, P. L.↗
DOE OSTI2023

Electrical Interrogation of Thickness‐Dependent Multiferroic Phase Transitions in the 2D Antiferromagnetic Semiconductor NiI 2

Abstract 2D magnetic materials hold promise for quantum and spintronic applications. 2D antiferromagnetic materials are of particular interest due to their relative insensitivity to external magnetic fields and higher switching speeds compared to 2D ferromagnets. However, their lack of macroscopic magnetization impedes detection and control of antiferromagnetic order, thus motivating magneto‐electrical measurements for these purposes. Additionally, many 2D magnetic materials are ambient‐reactive and electrically insulating or highly resistive below their magnetic ordering temperatures, which imposes severe constraints on electronic device fabrication and characterization. Herein, these issues are overcome via a fabrication protocol that achieves electrically conductive devices from the ambient‐reactive 2D antiferromagnetic semiconductor NiI 2 . The resulting gate‐tunable transistors show band‐like electronic transport below the antiferromagnetic and multiferroic transition temperatures of NiI 2 , revealing a Hall mobility of 15 cm 2 V −1 s −1 at 1.7 K. These devices also allow direct electrical probing of the thickness‐dependent multiferroic phase transition temperature of NiI 2 from 59 K (bulk) to 28 K (monolayer).

2D magnets↗
DOE OSTI2023

An Assessment of Deploying Advanced Pumped Storage Hydropower Technology in U.S. Electricity Markets

Pumped storage hydropower (PSH) is a type of hydropower technology where energy can be stored and generated by moving water between two reservoirs of differing elevations. In addition to providing 97% of the total utility-scale hydropower storage in the United States, PSH plants have operational characteristics - such as high ramp rates and the ability to provide reserves - that contribute to greater flexibility and reliability of the power grid. New PSH technologies can provide additional flexibility beyond existing, fixed-speed units. With the emergence of high levels of variable renewable energy resources (e.g., wind and solar), energy storage is expected to be crucial to the reliability and reliance of the power grid in a low-carbon future. At diurnal and longer durations, PSH plants have some of the lowest costs per unit of energy, have been proven to be reliable and efficient, are not cycle-limited, and typically have long lives, often exceeding 50 years. The work presented here focuses on a new generation of PSH: ternary PSH and quaternary PSH (together referred to as T/Q-PSH). Given recent experience in Europe, grid operators in the United States and elsewhere are increasingly focusing their attention on T/Q-PSH as a proven, financeable technology that can offer utility-scale, long-duration, fast-acting energy storage capabilities and grid services. T/Q-PSH differs from conventional PSH in that it can provide fast-response ancillary services during both generating and pumping operations. This capability together with fast mode switching times are key attributes that make T/Q-PSH technologies attractive for managing and stabilizing electricity systems with high amounts of variable renewable energy.

ENERGY PLANNING, POLICY, AND ECONOMY,HYDRO ENERGY↗
NASA NTRS1987

Radiation effects on power transistor performance

The D60T, D62T, and D75T transistors in the nuclear reactor were irradiated with bias voltage and high current I sub c vs. V sub ec curves were obtained to evaluate gain degradation at high power levels. Pre- and post-irradiation high current switching tests were performed to evaluate the response. The gamma ray damage work done at Sandia was correlated with the neutron work done at the O.S.U. reactor with the above specified transistors. Theoretical analyses of damage and electrical performance were conducted in terms of semiconductor physics. The experimental high current pulser was improved in order to measure switching time changes which are less than one microsecond at currents of 100 to 200 amperes for in-situ testing.

Frasca, Albert J.↗
DOE OSTI2025

Ferroelectric epitaxial Al(Sc/B)N/Mo/SiC heterostructures for high operating temperature devices

Advances in wurtzite nitride ferroelectrics of Al 1-x M x N (⁠ M = Sc or B) have led to novel capabilities, which must be integrated into existing fabrication processes. In the case of electronics operating > 200°C, a movement toward SiC-based platforms enables better performance over conventional Si, primarily due to the higher bandgap and lower intrinsic carrier concentration of SiC. Hence, the challenge is to develop a deposition process to integrate Al 1-x M x M x N ferroelectrics with elevated temperature-compatible materials for high temperature electronics such as the non-volatile memory component. We demonstrate epitaxial Al M N/Mo/SiC heterostructures, which provides both the crystalline and surface features that promote high-quality ferroelectric nitride film growth. Omega scans of the Mo (110) reflection exhibit a full width at half max of < 0.02° (40 arc sec) and the (0002) peak of the subsequently grown nitride film had a value of 1.1° for 160 nm thick Al 0.7 Sc 0.3 N and 1.3° for 400 nm thick Al 0.94 B 0.06 N. The crystallographic relationships found between the Al M N, Mo, and SiC layers indicate an advancement in sputter deposition of epitaxial films. Ferroelectric switching is also shown at 400 °C in both samples via polarization-electric field hysteresis and pulsed measurements, which exhibited P r values >100 μC cm -2 and E c between 3 and 4 M V cm -1 ⁠, despite a large presence of oxygen in both Al M N films ranging between 4 and 5 at.%, revealed by compositional analysis. This study demonstrates the process for synthesizing high-crystal quality ferroelectric nitride films, which can be used in extremely high temperature applications.

74 ATOMIC AND MOLECULAR PHYSICS↗
NASA NTRS1974

Self-healing fuse

Fast-acting current limiting device provides current overload protection for vulnerable circuit elements and then re-establishes conduction path within milliseconds. Fuse can also perform as fast-acting switch to clear transient circuit overloads. Fuse takes advantage of large increase in electrical resistivity that occurs when liquid metal vaporizes.

Jones, N. D.↗
NASA NTRS1982

Arc-Free High-Power dc Switch

Hybrid switch allows high-power direct current to be turned on and off without arcing or erosion. Switch consists of bank of transistors in parallel with mechanical contacts. Transistor bank makes and breaks switched circuit; contacts carry current only during steady-state "on" condition. Designed for Space Shuttle orbiter, hybrid switch can be used also in high-power control circuits in aircraft, electric autos, industrial furnaces, and solar-cell arrays.

Miller, W. N.↗
NASA NTRS1998

Stable CW Single-Frequency Operation of Fabry-Perot Laser Diodes by Self-Injection Phase Locking

Previously, single-frequency semiconductor laser operation using fiber Bragg gratings (FBG) has been achieved by two methods: (1) use of the FBG as the output coupler for an anti-reflection-coated semiconductor gain element; (2) pulsed operation of a gain-switched Fabry-Perot laser diode with FBG-optical and RF-electrical feedback. Here, we demonstrate CW single frequency operation from a non-AR coated Fabry-Perot laser diode using only FBG optical feedback.

Duerksen, Gary L.↗
NASA NTRS1999

Stable CW Single-Frequency Operation of Fabry-Perot Laser Diodes by Self-Injection Phase Locking

Previously, single-frequency semiconductor laser operation using fiber Bragg gratings has been achieved by two methods: 1) use of the FBG as the output coupler for an anti-reflection-coated semiconductor gain element'; 2) pulsed operation of a gain-switched Fabry-Perot laser diode with FBG-optical and RF-electrical feedback. Here, we demonstrate CW single frequency operation from a non-AR coated Fabry-Perot laser diode using only FBG optical feedback. We coupled a nominal 935 run-wavelength Fabry-Perot laser diode to an ultra narrow band (18 pm) FBG. When tuned by varying its temperature, the laser wavelength is pulled toward the centerline of the Bragg grating, and the spectrum of the laser output is seen to fall into three discrete stability regimes as measured by the side-mode suppression ratio.

Duerksen, Gary L.↗