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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 541 records · Page 30
All sourcesNASA NTRSDOE OSTI
NASA NTRS1980

Low-cost ion implantation and annealing technology for solar cells

Ion implantation and thermal annealing techniques for processing junctions and back surface layers in solar cells are discussed. Standard 10 keV (31)p(+) junction implants and 25 keV (11)B(+) back surface implants in combination with three-step furnace annealing are used for processing a range of silicon materials and device structures. Cells with efficiencies up to 16.5% AM1 are being produced, and large-area terrestrial cells with implanted junctions and back fields being fabricated in pilot production exhibit average efficiencies in excess of 15% AM1. Thermal annealing methods for removal of the radiation damage caused by implantation should be replaced by transient processing techniques in future production. Design studies have been completed for solar cell processing implanters to support 10 MW/yr and 100 MW/yr production lines, and analyses indicate that implantation costs can be reduced to approximately 1 cent/watt.

Kirkpatrick, A. H.↗
NASA NTRS1981

The Conference on High Temperature Electronics

The status of and directions for high temperature electronics research and development were evaluated. Major objectives were to (1) identify common user needs; (2) put into perspective the directions for future work; and (3) address the problem of bringing to practical fruition the results of these efforts. More than half of the presentations dealt with materials and devices, rather than circuits and systems. Conference session titles and an example of a paper presented in each session are (1) User requirements: High temperature electronics applications in space explorations; (2) Devices: Passive components for high temperature operation; (3) Circuits and systems: Process characteristics and design methods for a 300 degree QUAD or AMP; and (4) Packaging: Presently available energy supply for high temperature environment.

Hamilton, D. J.↗
NASA NTRS1982

Gain saturation in semiconductor lasers - Theory and experiment

The semiconductor stimulated gain saturation model of Zee has been extended using reasonable approximations to obtain an analytical solution for the gain saturation process in PbSnTe and to determine the limit to single mode power directly from the gain expression, the intraband relaxation time, and device and material parameters. The theoretical results are compared with experimental observations for single transverse mode cavity narrow stripe buried heterostructure PbSnTe lasers. Those results are interpreted in terms of an intraband relaxation time on the order of 2 x 10 to the -12th s in the temperature range 20-80 K.

Kasemset, D.↗
NASA NTRS1983

Silicon carbide, a high temperature semiconductor

Electronic applications are described that would benefit from the availability of high temperature semiconductor devices. Comparisons are made among potential materials for these devices and the problems of each are discussed. Recent progress in developing silicon carbide as a high temperature semiconductor is described.

Powell, J. A.↗
NASA NTRS1983

Tunable diode lasers for 3-30 micron infrared operation

The tunable diode laser is now widely used in high resolution infrared spectroscopy studies, taking into account laboratory and industrial applications. The present investigation is concerned with advances related to laser performance and reliability. The advances are the result of improvements in materials and device technologies. Reliability data for broad-area Pb(1-x)Sn(x)Se lasers are considered along with performance improvements in stripe-geometry lasers, laser performance at wavelengths above 25 microns, and laser performance at wavelengths below 4 microns. Attention is given to tunable Pb-salt infrared diode lasers, mesa-stripe geometry lasers of Pb(1-x)Sn(x)Se and PbS(1-x)Se(x), and long wavelength diode laser emission observed in both Pb(1-x)Sn(x)Te and Pb(1-x)Sn(x)Se.

Linden, K. J.↗
NASA NTRS1985

Passive and Active Control of Space Structures (PACOSS)

Passive and Active Control of Space Structures (PACOSS) is a five-year program designed to investigate highly damped structures in conjunction with active control systems, and in particular to develop technology that integrates passive damping and active control to achieve precise pointing control. Major areas of research include metal matrix composites; viscoelastic materials; damping devices; dynamic test article design, fabrication and testing; and active damping.

Morosow, G.↗
NASA NTRS1986

Space solar cell research: Problems and potential

The value of a passive, maintenance-free, renewable energy source was apparent in the early days of the space program, and the silicon solar cell was pressed into service. Efficiencies of those early space solar arrays were low, and lifetimes shorter than hoped for, but within a decade significant advances had been made in both areas. Better performance was achieved through improvements in silicon single crystal material, better device designs, and a better understanding of the factors that affect the performance of a solar cell in space. Chief among the latter, particularly for the mid-to-high altitude (HEO) and geosynchronous (GEO) orbits, are the effects of the naturally occurring particulate radiation environment. Although not as broadly important to the photovoltaic community at large as increased efficiency, the topic of radiation damage is critically important to use of solar cells in space, and is a major component of the NASA research program in space photovoltaics. A brief overview of some of the opportunities and challenges for space photovoltaic applications is given, and some of the current research directed at achieving high efficiency and controlling radiation damage in space solar cells is discussed.

Flood, D. J.↗
NASA NTRS1985

HEMT 60 GHz amplifier

A high electron mobility transistor (HEMT) amplifier has been fabricated which exhibits 7.5 dB gain at 61 GHz. This result was obtained with a quarter-micrometre gate-length depletion-mode HEMT. Reduction of source-gate resistance and gate length are primarily responsible for this performance. The letter describes the materials and device processing technology developed for fabricating these devices.

Berenz, J.↗
NASA NTRS1986

High efficiency crystalline silicon solar cells

A review of the entire research program since its inception ten years ago is given. The initial effort focused on the effects of impurities on the efficiency of silicon solar cells to provide figures of maximum allowable impurity density for efficiencies up to about 16 to 17%. Highly accurate experimental techniques were extended to characterize the recombination properties of the residual imputities in the silicon solar cell. A numerical simulator of the solar cell was also developed, using the Circuit Technique for Semiconductor Analysis. Recent effort focused on the delineation of the material and device parameters which limited the silicon efficiency to below 20% and on an investigation of cell designs to break the 20% barrier. Designs of the cell device structure and geometry can further reduce recombination losses as well as the sensitivity and criticalness of the fabrication technology required to exceed 20%. Further research is needed on the fundamental characterization of the carrier recombination properties at the chemical impurity and physical defect centers. It is shown that only single crystalline silicon cell technology can be successful in attaining efficiencies greater than 20%.

Sah, C. Tang↗
NASA NTRS1987

Computer control of a scanning electron microscope for digital image processing of thermal-wave images

Using a recently developed technology called thermal-wave microscopy, NASA Lewis Research Center has developed a computer controlled submicron thermal-wave microscope for the purpose of investigating III-V compound semiconductor devices and materials. This paper describes the system's design and configuration and discusses the hardware and software capabilities. Knowledge of the Concurrent 3200 series computers is needed for a complete understanding of the material presented. However, concepts and procedures are of general interest.

Gilbert, Percy↗
NASA NTRS1986

Measurement of the thermal conductivity of composites using heat flow sensors

A thermal conductivity measuring apparatus that uses heat flow sensors to measure the heat flux through samples was constructed of inexpensive materials. This device was used to measure the thermal conductivity (k) of two composites used in the space program that consist of fibrous or granular components embedded in a resin matrix. The k-values that were determined ranged from 0.035 to 0.059 Btu/h sq ft-F/ft (-163 to 553 F) and 0.029 to 0.035 Btu/h-sq ft-F/ft (77 to 212 F). Thermal conductivity values of the composites conformed to the rule of mixture. The accuracy of the system was found to be comparable to the guarded hotplate and it requires neither a skilled operator nor extensive maintenance.

Penn, B. G.↗
NASA NTRS1987

A simple device for the preparation of embedded materials science specimens for ultramicrotomy

A simple hand-held grinding fixture is discussed which can produce microtome mounts of hard materials, oriented interfaces, and powders embedded in a 5/16-in plastic rod. The device has been used for the ultramicrotomy of meteorite samples, 10-50 micron interplanetary dust particles, and thin films on plastic. Results are presented for a layer lattice silicate from the Murchison carbonaceous chondrite, illustrating the resolution and structural detail that can be obtained with the method.

Blake, D. F.↗
NASA NTRS1987

Characterization and modelling of open tube diffused n+p bulk InP solar cells

The authors describe the photovoltaic characteristics of an n+p junction solar cell fabricated on bulk InP by an open-tube-diffusion technique. Analysis of the forward characteristics shows that the forward current is dominated by recombination in the quasineutral regions, indicating that the fabrication technique produces a clean junction. Spectral response measurements are analyzed and more realistic boundary conditions are used to model the solar cell to determine important material and device parameters.

Bothra, S.↗
NASA NTRS1989

Thermal-Wave Microscope

Computer-controlled thermal-wave microscope developed to investigate III-V compound semiconductor devices and materials. Is nondestructive technique providing information on subsurface thermal features of solid samples. Furthermore, because this is subsurface technique, three-dimensional imaging also possible. Microscope uses intensity-modulated electron beam of modified scanning electron microscope to generate thermal waves in sample. Acoustic waves generated by thermal waves received by transducer and processed in computer to form images displayed on video display of microscope or recorded on magnetic disk.

Jones, Robert E.↗
NASA NTRS1988

NASA photovoltaic research and technology

NASA photovoltaic R and D efforts address future Agency space mission needs through a comprehensive, integrated program. Activities range from fundamental studies of materials and devices to technology demonstrations of prototype hardware. The program aims to develop and apply an improved understanding of photovoltaic energy conversion devices and systems that will increase the performance, reduce the mass, and extend the lifetime of photovoltaic arrays for use in space. To that end, there are efforts aimed at improving cell efficiency, reducing the effects of space particulate radiation damage (primarily electrons and protons), developing ultralightweight cells, and developing advanced ray component technology for high efficiency concentrator arrays and high performance, ultralightweight arrays. Current goals that have been quantified for the program are to develop cell and array technology capable of achieving 300 watts/kg for future missions for which mass is a critical factor, or 300 watts/sq m for future missions for which array size is a major driver (i.e., Space Station). A third important goal is to develop cell and array technology which will survive the GEO space radiation environment for at least 10 years.

Flood, Dennis J.↗
NASA NTRS1988

The design of radiation-hardened ICs for space - A compendium of approaches

Several technologies, including bulk and epi CMOS, CMOS/SOI-SOS (silicon-on-insulator-silicon-on-sapphire), CML (current-mode logic), ECL (emitter-coupled logic), analog bipolar (JI, single-poly DI, and SOI) and GaAs E/D (enhancement/depletion) heterojunction MESFET, are discussed. The discussion includes the direct effects of space radiation on microelectronic materials and devices, how these effects are evidenced in circuit and device design parameter variations, the particular effects of most significance to each functional class of circuit, specific techniques for hardening high-speed circuits, design examples for integrated systems, including operational amplifiers and A/D (analog/digital) converters, and the computer simulation of radiation effects on microelectronic ISs.

Kerns, Sherra E.↗
NASA NTRS1989

Chemical profiling of silicon nitride structures

X ray photoelectron spectroscopy (XPS), spectroscopic ellipsometry (SE), and scanning electron microscopy (SEM) were used to study structural and chemical inhomogeneities in several electronic materials and device structures of relevance to radiation hard electronics. The systems studied include metal nitride oxide semiconductor (MNOS) structures, silicon oxynitride (SiO(x)N(y)) formed by the thermal nitridation of SiO2, and semiconductor on insulator (SOI) structures. Studies of MNOS structures suggest that the effect of H2 annealing is to make the Si3N4/SiO2 interface less abrupt by causing interdiffusion of silanol and silamine groups with subsequent oxynitride formation. Another effect of the annealing appears to be to relieve the strain at the SiO2/Si interface.

Vasquez, R. P.↗
NASA NTRS1990

LWIR detector arrays based on nipi superlattices

It is proposed that nipi superlattice structures in InSb or InAs can be grown with modern techniques to achieve tunable and stable LWIR detectors with high performance. Key device and material considerations for the application of such nipi superlattices to LWIR detectors are examined. It is shown that practical absorption coefficients (of about 100/cm) can be achieved with high doping concentrations (of about 10 to the 19th/cu cm) achievable in these materials. In particular, recent delta doping techniques being developed in molecular beam epitaxy offer promise of higher doping concentrations, improved uniformity, and greater flexibility in tailoring the structures for optimum detector performance.

Maserjian, J.↗