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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Scanning probe spectroscopy of sulfur vacancies and MoS 2 monolayers in side-contacted van der Waals heterostructures

We investigate the interplay between vertical tunneling and lateral transport phenomena in electrically contacted van der Waals heterostructures made from monolayer MoS 2 , hBN, and graphene. We compare data taken by low-temperature scanning tunneling spectroscopy to results from room-temperature conductive atomic force spectroscopy on monolayer MoS 2 with sulfur vacancies and with varying hBN layers. We show that for thick hBN barrier layers, where tunneling currents into the conductive substrate are suppressed, a side-contact still enables addressing the defect states in the scanning tunneling microscopy via the lateral current flow. Few-layer hBN realizes an intermediate regime in which the competition between vertical tunneling and lateral transport needs to be considered. The latter is relevant for device structures with both a thin tunneling barrier and a side-contact to the semiconducting layers.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Effect of Iron Contamination and Polysilicon Gettering on the Performance of Polysilicon‐Based Passivating Contact Solar Cells

Over the past decade, silicon solar cells with carrier-selective passivating contacts based on polysilicon capping an ultra-thin silicon oxide (commonly known as TOPCon or POLO) have demonstrated promising efficiency potentials and are regarded as an evolutionary upgrade to the PERC (passivated emitter and rear contact) cells in manufacturing. The polysilicon-based passivating contacts also exhibit excellent gettering effects that relax the wafer and cleanroom requirements to some extent. Here, in this work, we experimentally explore the impact of bulk iron contamination and polysilicon gettering on the passivation quality of the polysilicon/oxide structure and the resulting solar cells performance. Results show that both n- and p-type polysilicon/oxide passivating contacts are not affected by iron gettering, demonstrating robust and stable passivation quality. However, for a very high bulk iron contamination (1 × 10 13 cm −3 ), the accumulated iron in the p-type lightly boron-doped emitter in crystalline silicon would degrade the emitter saturation current density. This can cause a reduction in both open-circuit voltage and short-circuit current. Meanwhile, this very high iron content (1 × 10 13 cm −3 ) can further degrade the fill factor and temperature coefficient of the cells. On the other hand, for an initial iron content of 2 × 10 12 cm −3 , which should be well above the iron level in the current industrial Czochralski silicon wafers, the resulting cells demonstrate similar performance as the control group with no intentional iron contamination. This work brings attention to both the benefits of polysilicon gettering effects as well as the potential degradation due to the accumulation of metal impurities in the p-type emitter region.

14 SOLAR ENERGY↗
DOE OSTI2023

Exploiting Fixed Charge at Selective Contacts for Silicon Photovoltaics

The goal of this work was to examine and exploit fixed interface charges in ultra-thin (0-3 nm thickness) tunnel dielectric layers sandwiched between silicon and selective contact metal oxides (molybdenum oxide, MoO x , titanium oxide, TiO 2 ). Specifically, the interface fixed charge was varied by changing processing conditions and materials over a wide range and the effect on the current-voltage behavior and the Schottky barrier height was quantified. In budget period 1 (year 1), the objective was to grow aluminum oxide tunnel layers with quantified fixed charge over a range of ~1E12 to ~-2E12 cm -2 and combine these with MoO x and TiO 2 layers on Czochralsi (CZ) mono p- and n-Si, respectively. We sought conditions that maximize fixed charge and minimize Schottky barrier height to MoO x contacts to p-Si. This objective, along with investigating the effects of silicon surface terminations, occupied the majority of the project timeline (Q1-Q8) due to complications with high specific contact resistivity values. In the last two quarters of the project period, the objective was to insert HfO2 layers between Si and aluminum oxide layers to quench the fixed charge for layers with otherwise identical thermal history. Another objective was to lower the barrier height at TiO 2 -based contacts on n-type Si, but that was never investigated completely.

14 SOLAR ENERGY↗
DOE OSTI2022

Robust silane self-assembled monolayer coatings on plasma-engineered copper surfaces promoting dropwise condensation

Dropwise condensation is well known to result in better heat transfer performance owing to efficient condensate/droplet removal, which can be harnessed in various industrial heat/mass transfer applications such as power generation and conversion, water harvesting/desalination, and electronics thermal management. The key to enhancing condensation via the dropwise mode is thin low surface energy coatings (<100 nm) with low contact angle hysteresis. Ultrathin (<5 nm) silane self-assembled monolayers (or SAMs) have been widely studied to promote dropwise condensation due to their minimal thermal resistance and scalable integration processes. Such thin coatings typically degrade within an hour during condensation of water vapor. After coating failure, water vapor condensation transitions to the inefficient filmwise mode with poor heat transfer performance. We enhance silane SAM quality and durability during water vapor condensation on copper compared to state-of-the-art silane coatings on metal surfaces. We achieve this via (i) surface polishing to sub-10 nm levels, (ii) pure oxygen plasma surface treatment, and (iii) silane coating integration with the copper substrate in an anhydrous/moisture-free environment. The resulting silane SAM has low contact angle hysteresis (≈20°) and promotes efficient dropwise condensation of water for >360 hours without any visible sign of coating failure/degradation in the absence of non-condensable gases. We further demonstrate enhanced heat transfer performance (≈5-7× increase over filmwise condensation) over an extended period of time. Surface characterization data post-condensation leads us to propose that in the absence of non-condensable gases in the vapor environment, the silane SAM degrades due to reduction and subsequent dissolution of copper oxide at the oligomer-substrate interface. The experiments also indicate that the magnitude of surface subcooling (or condensation rate) affects the rate of coating degradation. Finally, this work identifies a pathway to durable dropwise promoter coatings that will enable efficient heat transfer in industrial applications.

42 ENGINEERING↗
DOE OSTI2024

The Impact of Lithium Anode Interface on Capacity Fade in Polymer Electrolyte-Based Solid-State Batteries

This study investigates the Li stripping-plating morphology and failure mechanisms in full cells consisting of a solid polymer electrolyte (SPE) with two commercial Li anodes: Li chip and Li foil. The primary identified failure mechanism of the SPE cell is capacity fade, regardless of the Li manufacturer. While the cathode’s role in capacity fade is evident, the Li anode significantly influences cycling performance, with Li foil cells cycling 50% longer than Li chip cells, a statistical difference. Further, post-mortem scanning electron microscopy and X-ray photoelectron spectroscopy results attribute the Li chip’s faster capacity fade to a loss of contact and continuous growth of the solid electrolyte interphase (SEI). Conversely, Li foil maintains consistent contact with the solid polymer, displaying a thin and stable SEI. Additionally, failure mechanisms between a gel electrolyte in previous work and the dry SPE are compared.

25 ENERGY STORAGE↗
DOE OSTI2023

Edge Channel Transmission through a Quantum Point Contact in the Two-Dimensional Topological Insulator Cadmium Arsenide

Cadmium arsenide (Cd 3 As 2 ) thin films feature a two-dimensional topological insulator (2D TI) phase for certain thicknesses, which theoretically hosts a set of counterpropagating helical edge states that are characteristic of a quantum spin Hall (QSH) insulator. In devices containing electrostatically defined junctions and for magnetic fields below a critical value, chiral edge modes of the quantum Hall effect can coexist with QSH-like edge modes. In this work, we use a quantum point contact (QPC) device to characterize edge modes in the 2D TI phase of Cd 3 As 2 and to understand how they can be controllably transmitted, which is important for use in future quantum interference devices. We investigate equilibration among both types of modes and find non-spin-selective equilibration. We also demonstrate the effect of the magnetic field on suppressing equilibration. We discuss the potential role of QSH-like modes in a transmission pathway that precludes full pinch-off.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

A constitutive model for sheared dense fiber suspensions

Here we propose a constitutive model to predict the viscosity of fiber suspensions, which undergoes shear thinning, at various volume fractions, aspect ratios, and shear stresses/rates. We calibrate the model using the data from direct numerical simulation and prove the accuracy by predicting experimental measurements from the literature. We use a friction coefficient decreasing with the normal load between the fibers to quantitatively reproduce the experimentally observed shear thinning in fiber suspensions. In this model, the effective normal contact force, which is directly proportional to the bulk shear stress, determines the effective friction coefficient. A rise in the shear stress reduces the effective friction coefficient in the suspension. As a result, the jamming volume fraction increases with the shear stress, resulting in a shear thinning in the suspension viscosity. Moreover, we extend the model to quantify the effects of fiber volume fraction and aspect ratio in the suspension. We calibrate this model using the data from numerical simulations for the rate-controlled shear flow. Once calibrated, we show that the model can be used to predict the relative viscosity for different volume fractions, shear stresses, and aspect ratios. The model predictions are in excellent agreement with the available experimental measurements from the literature. The findings of this study can potentially be used to tune the fiber size and volume fraction for designing the suspension rheology in various applications.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

Optimized NiTe 2 /Ni back contacts via chemical deposition for high performance CdTe solar cells

The development of efficient and stable back contacts remains a major challenge in achieving high performance and long-term stability of CdTe thin-film solar cells. Here, this work revisits the formation of NiTe 2 by chemical bath deposition (CBD) as a back contact for CdTe devices. An optimized CBD recipe, based on high-purity precursors and the addition of copper chloride directly into the bath, was developed and applied to fabricate Cu-doped CdTe solar cells. A modified Cu-free methodology was also applied to Group V doped absorbers. The process included pinhole filling, ion milling, CBD, annealing, and sputtering to form a low-barrier back contact. Devices fabricated using this method achieved consistent open-circuit voltages (V oc ) above 800 mV and fill factors (FF) exceeding 70%. The best Cu-doped devices reached power conversion efficiencies (PCE) above 18 %, and preliminary results with Group V-doped material demonstrated compatibility of the method with high-efficiency, state-of-the-art CdTe devices. This study shows that NiTe 2 /Ni back contacts, formed via an optimized chemical process followed by sputtering of Ni, represent a promising pathway for achieving low-barrier and potentially stable back contacts in modern CdTe photovoltaics.

14 SOLAR ENERGY↗
DOE OSTI2024

Improving 2D Schottky contacts using an intralayer strategy

An additional insulating layer between the electrode and semiconductor is beneficial to reduce the interfacial coupling and build two-dimensional (2D) Schottky contacts. Here, an intralayer strategy was proposed by using metallic 2D Bi 2 Sr 2 CaCu 2 O 8+δ (BSCCO) as contacts on 2D semiconductors. Inside a BSCCO monolayer, a conductive layer is sandwiched between insulating layers. Thus, the BSCCO contact has its own insulating layer, which is ultra-thin, single crystalline, and of high quality. This native layer could reduce the metal-induced gap state and thus weaken the interfacial Fermi level pinning effect. Such 2D Schottky diodes thus have barrier heights of 300 mV and a rectification ratio of 104. Furthermore, 2D metal-semiconductor field-effect transistors with BSCCO Schottky gate have a high on-off ratio, low leakage current, and low subthreshold swing value near the theoretical limit. The intralayer structure offers a new approach to improve the 2D Schottky junctions and has prospects in 2D electronics and optoelectronics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2026

Microstructure and Composition of Passivating Interfaces in Silicon Heterojunction Solar Modules Weathered in Different Climates

Sanyo/Panasonic patented silicon heterojunction with intrinsic thin layer (HIT) solar cells in the 1990's, which demonstrated world record photovoltaic (PV) efficiency around 2014 and inspired the newer generations of silicon heterojunction technology (SHJ) as well as the current world record back-contact PV cell designs. The high-quality passivation strategy, utilizing ultra-thin layers of hydrogenated amorphous silicon (a-Si:H), leads to high voltages and long carrier lifetimes, but these qualities may degrade over time as the modules operate outdoors. Here, we investigate local microstructure and composition at the interface layers of cells from HIT modules weathered in a hot, humid climate (Florida, USA) and temperate climate (Colorado, USA) for 10 years. We employ a comprehensive set of high-resolution electron microscopy imaging and spectroscopy to directly resolve structure and composition in these cells down to the nanoscale. We show features such as alignment of the In2O3 transparent conducting oxide and a-Si:H layers on the textured c-Si facets, interfacial oxidation at the a-Si:H/c-Si and In2O3/a-Si:H interfaces, and twinned c-Si resulting from epitaxial growth into the a-Si:H layer. Our results raise potential degradation mechanisms in these outdoor-weathered modules, but the root cause of electrical loss remains uncertain due to the very small changes in aged samples. This study shows that many atomic scale features at the In2O3/a-Si:H/c-Si interfaces are surprisingly robust, and the electrical losses with aging may either be attributed to other pathways or be very sensitive to the subtle chemical and microstructural features observed here.

14 SOLAR ENERGY↗
DOE OSTI2025

Methods to Observe Tribological Failures in Self-Mated Steel Contacts

Scuffing, a type of wear found in highly stressed or poorly lubricated contacts, is characterized by a rapid increase in friction and severe plastic deformation of the near-surface material. Scuffing has proven difficult to study because it initiates unpredictably, progresses rapidly, and typically develops within an inaccessible contact interface. Although there have been successful in-situ studies of scuffing in real-time, the transparent counter body needed for these studies changes the interactions between the surfaces and the lubricant, which affects the scuffing process in unknown ways. This paper describes the development of X-ray-compatible tribometry to study the scuffing of self-mated steels in-situ and in real-time. The method uses a crossed cylinders configuration with a thin (500 μm thick) stationary component and a small (≈200 μm) contact width to maximize X-ray interactions with atoms within the stress field generated by the contact. The resulting instrument and method are used to benchmark the scuffing response of self-mated 52,100 steel under tribologically challenging ‘oil-off’ lubrication conditions. The results demonstrate reliable scuffing in this configuration despite the relatively small contact areas and loads used. Following scuffing, gross plastic deformation was observed on both surfaces along with significant subsurface grain refinement and flow only on the stationary surface, which experienced constant contact. Interestingly, high friction initiated at specific locations of the migratory surface, which experienced intermittent contact, and then propagated across the track over time, suggesting that local conditions of the migratory surface dominated friction leading into the failure event.

36 MATERIALS SCIENCE↗
DOE OSTI2025

A Universal Design of Lithium Anode via Dynamic Stability Strategy for Practical All‐Solid‐State Batteries

Abstract All‐solid‐state Li‐metal battery (ASSLB) chemistry with thin solid‐state electrolyte (SSE) membranes features high energy density and intrinsic safety but suffers from severe dendrite formation and poor interface contact during cycling, which hampers the practical application of rechargeable ASSLB. Here, we propose a universal design of thin Li‐metal anode (LMA) via a dynamic stability strategy to address these issues. The ultra‐thin LMA (20 μm) is in situ constructed with uniform highly Li‐ion conductive solid‐electrolyte interphase and composite‐polymer interphase (CPI) via electroplating process. As a result, the passivation layer with poor Li‐ion conduction on Li anode can be dissolved and small surface resistance can be achieved due to the good compatibility of CPI to SSEs. The cycling of Li symmetric cell with Li 6 PS 5 Cl thin film electrolyte (<100 μm) shows a high critical current density of >2.0 mA cm −2 with excellent cycling stability at 1.0 mA cm −2 . The ASSLBs paring with Ni‐rich LiNi 0.6 Mn 0.2 Co 0.2 O 2 cathode demonstrated the feasibility of engineered LMA design by presenting good rate capability from 0.1 C to 1.0 C at room temperature, as well as long‐term cycling stability (81 % retention after 100 cycles). This work represents a general pathway to make thin dendrite‐free LMA available for high‐energy‐density ASSLBs.

Deng, Tao [Department of Chemical and Biomolecular↗
DOE OSTI2025

A Universal Design of Lithium Anode via Dynamic Stability Strategy for Practical All‐Solid‐State Batteries

Abstract All‐solid‐state Li‐metal battery (ASSLB) chemistry with thin solid‐state electrolyte (SSE) membranes features high energy density and intrinsic safety but suffers from severe dendrite formation and poor interface contact during cycling, which hampers the practical application of rechargeable ASSLB. Here, we propose a universal design of thin Li‐metal anode (LMA) via a dynamic stability strategy to address these issues. The ultra‐thin LMA (20 μm) is in situ constructed with uniform highly Li‐ion conductive solid‐electrolyte interphase and composite‐polymer interphase (CPI) via electroplating process. As a result, the passivation layer with poor Li‐ion conduction on Li anode can be dissolved and small surface resistance can be achieved due to the good compatibility of CPI to SSEs. The cycling of Li symmetric cell with Li 6 PS 5 Cl thin film electrolyte (<100 μm) shows a high critical current density of >2.0 mA cm −2 with excellent cycling stability at 1.0 mA cm −2 . The ASSLBs paring with Ni‐rich LiNi 0.6 Mn 0.2 Co 0.2 O 2 cathode demonstrated the feasibility of engineered LMA design by presenting good rate capability from 0.1 C to 1.0 C at room temperature, as well as long‐term cycling stability (81 % retention after 100 cycles). This work represents a general pathway to make thin dendrite‐free LMA available for high‐energy‐density ASSLBs.

Deng, Tao [Department of Chemical and Biomolecular↗
DOE OSTI2023

Detailed investigation of electrical and optical properties of textured n-type and roughened p-type tunnel oxide passivated contacts for screen-printed double-side passivated contact silicon solar cell application

Here, this paper presents detailed characterization and analyses of the optical, electrical, and contact properties of a 35 nm phosphorus-doped (n-type) polysilicon (poly-Si) and a 250 nm boron-doped (p-type) poly-Si deposited respectively on textured and roughed surface. These layers could be applied respectively to the front and rear sides of an n-type Si to produce back junction bifacial screen-printed double-side tunnel oxide passivated contacts (DS-TOPCon) solar cells. Optical and device modeling revealed a short circuit current density loss of 1.5 mA/cm 2 and 0.5 mA/cm 2 due to absorption in the front n-TOPCon and rear side p-TOPCon layers, respectively. The passivation and contact properties including metalized and unmetallized recombination current density (J 0 ), as well as contact resistivity, were determined as a function of contact firing temperature in the range of 700~800°C. The passivation quality of the front thin n-TOPCon was found to deteriorate with increased firing temperature while the rear thick p-TOPCon improved. The study showed that the simulated contact firing at 730°C resulted in the best unmetallized double-side TOPCon precursor, with an excellent implied open-circuit voltage of 730 mV and implied fill factor of ~86 %. However, the metalized J0 increased and contact resistivity decreased monotonically with the increase in the firing temperature. The 2D device simulations revealed that these layers can produce screen-printed DS-TOPCon cells with an efficiency of ~22.5 %. Solar cell modeling also showed that the DS-TOPCon solar cell efficiency can reach 24.1 % by decreasing the n-TOPCon thickness to 20 nm and lowering the full area metalized J 0 to ~100 mA/cm 2 .

14 SOLAR ENERGY↗
DOE OSTI2026

Ohmic contact formation at the Au/Sr 3 Ir 2 O 7 interface

Here, using X-ray photoelectron spectroscopy (XPS), we show that Au forms an Ohmic contact with the surface of the narrow-bandgap Mott insulator Sr 3 Ir 2 O 7 thin films. XPS reveals no significant binding energy shift with increasing Au overlayer thickness on epitaxial Sr 3 Ir 2 O 7 (001) thin films, consistent with the linear current-voltage (I-V) behavior and indicative of negligible band bending. The absence of Schottky barrier formation at the Au/Sr 3 Ir 2 O 7 interface corroborates the metallic surface character of the Sr 3 Ir 2 O 7 thin film, as observed in angle-resolved photoemission spectroscopy (ARPES) studies, suggesting that the interface behaves effectively as a metal-on-metal contact. Furthermore, XPS points to the presence of distinct surface/interface and bulk electronic states for Sr 3 Ir 2 O 7 . This study provides critical material information for designing iridate-based electronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Field deployable trace radioisotope analysis through combined electrochemical and alpha spectroscopy methods

A method for depositing actinides directly onto a 4H-SiC Schottky barrier diode (SBD) detector as a field deployable actinides sensor was developed to enable off-site analysis, shortening the time to obtain critical information such as elements, concentration, and/or isotopic ratio related to the radiological situation. A thin film of Hg was first electrodeposited onto the Pt contact of the SiC diode, followed by chronoamperometric deposition of microgram levels of actinides under conventional control conditions. The 4H-SiC diode maintained consistent functionality through the electrodeposition process and showed resolved alpha-energy spectra that contained accurate isotopic information demonstrating the feasibility of a combined chemical and radiological sensor for field actinide detection and quantification.

38 RADIATION CHEMISTRY, RADIOCHEMISTRY, AND NUCLEA↗
DOE OSTI2026

Roadmap on advanced and / real-time characterisation of solid state materials and devices for energy applications

A strong societal and political drive is motivating the development and optimization of novel energy conversion and storage systems for decarbonization. The successful implementation of solid state devices such as fuel cells and secondary batteries depends, however, on achieving ambitious targets in terms of performance, reliability and cost competitiveness. Research and technology are addressing these needs through a holistic approach including exploration of new materials and nanoarchitectures, as well as system engineering. These significant efforts require the support of appropriate characterization tools capable of assessing nanometer-scale phenomena such as concentration profiles of ionic and electronic charges, local chemical compositions and their evolution over time across interfaces. This roadmap provides an overview of selected advanced characterization techniques for energy materials and devices. Specific focus is put on in situ/operando methods for probing electrochemical phenomena in real-time under realistic working conditions. Experts in the field provide an extensive review of the current state of the art in 2025 and the current and future challenges for the characterization of local chemistry and kinetics in the bulk of the material, in nanoarchitectures (e.g. thin films) and at the interfaces (e.g. grain boundaries, phase contacts, solid/liquid and solid/gas interfaces) . The aim is to provide a detailed guide to the techniques, describing opportunities and bottlenecks for their practical deployment and examples of successful applications.

25 ENERGY STORAGE↗