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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Water content modulation enables selective ion transport in 2D MXene membranes

Separation membranes are critical for a range of processes, including but not limited to water desalination, chemical and fuel production, and recycling and recovery applications. Fundamentally, there are intrinsic trade-offs between permeability and selectivity. Local water organization and content can impact membrane structure (short- and long-range) in laminar transition metal carbide (MXene) membranes and impact selective ion permeation. Intercalation of chaotropic cesium (Cs + ) ions within the layers reduces the water content in the membrane and at the surface which cannot be found in the intercalation of other ions. Additionally, 3D imaging using focused ion beam scanning electron microscopy showed fewer defects in the Cs-MXene membrane, due to reduced local water content, leading to more efficient ion sieving. X-ray diffraction and density functional theory calculations on the nanochannel structure demonstrated that the chaotropic ion results in the smallest nanochannel size and induces a stronger resistance to water-induced nanochannel swelling. With a narrower nanochannel, the Cs-MXene membrane limits ion transport pathways, resulting in more selective transport of lithium over other metal cations, as evidenced in both experiment and molecular dynamics simulations. In conclusion, our findings highlight the potential for controlling the structural organization of 2D MXene membranes to enable on-demand transport of ions for diverse applications.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Bistable random momentum transfer in a linear on-chip resonator

Optical switches and bifurcation rely on the nonlinear response of materials. Here, we demonstrate linear temporal bifurcation responses in a passive multimode microresonator, with strongly coupled chaotic and whispering gallery modes (WGMs). In microdisks, the chaotic modes exhibit broadband transfer within the deformed cavities, but their transient response is less explored and yields a random output of the analog signal distributed uniformly from “0” to “1.” Here, we build chaotic states by perturbing the multimode microring resonators with densely packed silicon nanocrystals on the waveguide surface. In vivo measurements reveal random and “digitized” output that ONLY populates around 0 and 1 intensity levels. The bus waveguide mode couples first to chaotic modes, then either dissipates or tunnels into stable WGMs. This binary pathway generates high-contrast, digitized outputs. In conclusion, the fully passive device enables real-time conversion of periodic clock signals into binary outputs with contrasts exceeding 12.3 dB, data rates of up to 10 7 · bits per second, and 20 dB dynamic range.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Atomic precision imaging with an on-chip scanning tunneling microscope integrated into a commercial ultrahigh vacuum STM system

In this article, we replace the Z axis of the piezotube of a conventional Ultrahigh-Vacuum (UHV) Scanning Tunneling Microscope (STM) with a one-degree-of-freedom Microelectromechanical-System (MEMS) nanopositioner. As a result, a hybrid system is realized in which motions in the XY plane are carried out by the piezotube, while the MEMS device performs the Z-axis positioning with a smaller footprint and higher sensitivity. With the proposed system and a feedback loop, STM imaging is conducted on an H-passivated Si (100)-2×1 sample in a UHV condition, demonstrating that this on-chip STM is conducive to atomic precision scanning tunneling microscopy.

Engineering↗
DOE OSTI2021

Tunable and scalable fabrication of plasmonic dimer arrays with sub-10nm nanogaps by area-selective atomic layer deposition

Nanogaps in metallic nanostructures produce local field enhancements with potential applications in surface enhanced spectroscopy, solar energy conversion, and photocatalysis. Atomic layer deposition is applied as a conformal coating to modify nanogap sizes and tune the optical properties of plasmonic dimer arrays with sub-10 nm nanogaps. Nanostructures are fabricated using layers of gold and palladium to combine features of plasmonics and area-selective atomic layer deposition, where copper metal is deposited on palladium-covered surfaces. Direct measurements of optical extinction for successive smaller nanogaps and thicker copper coatings show that spectral features become broadened at first due to heating-induced shape changes but subsequently sharpen as copper coatings form on palladium structures. Furthermore, longitudinal resonances of plasmonic dimers blue shift for thin coatings due to heating and decreasing aspect ratio, but thicker coatings lead to red shifts due to narrowing nanogaps. Together, these results show that area-selective atomic layer deposition is a promising tool for achieving large area arrays of plasmonic dimers with sub-10 nm nanogaps.

Engineering↗
DOE OSTI2023

Multipurpose active scanning probe cantilevers for near-field spectroscopy, scanning tunnel imaging, and atomic-resolution lithography

In this work, we report progress on developing a multipurpose scanning probe cantilever applying gallium nitride nanowires as the probe tip. Gallium nitride nanowires possess high potential as probes due to their straight profile, tunable electrical and optical properties, high Young’s Modulus, durability, and high-yield fabrication process. Their wide bandgap enables them to be pumped to emit ultraviolet pulses which can be used for optical imaging and spectroscopy. They can be doped during growth to be electrically conductive, and their sharp tips obtained during epitaxial growth enable confinement of a high electric field at tip–sample interface. Their sharp tips are obtained during fabrication by their epitaxial growth which eliminates the need for postprocess sharpening that is typically required for standard STM tips. We present results of using gallium nitride nanowires for scanning tunnel microscopy applications of atomic-resolution imaging and lithography, and atomic force microscopy applications of imaging and lithography in vacuum and atmospheric environments.

Engineering↗
DOE OSTI2023

Measurements of He-Ar, He-N 2 , and He-air thermal creep slip and accommodation coefficients at high temperatures

Understanding gas flows in capillaries has many applications in modeling the transport of gases in nano-structured, porous, or fractured media. A network of capillaries can often approximate these media, and also information on gas-surface interactions obtained from capillary experiments can be used for modeling flows in these media. Experimental data on flows of different mixtures of He-Ar, He-N 2 , and He-air in the slip regime and in stainless steel capillaries at high temperatures were obtained by using a two-bulb apparatus. An accurate expression for the thermal creep slip coefficients with the Lennard-Jones potential parameters and diffuse-specular reflection gas-surface interaction conditions were then used to obtain the accommodation coefficients for the different gases. The experimental data are best described with values of accommodation coefficients in the range of 0.1–0.3 for He and 0.5–1.0 for Ar, N 2 , and air. Further, the use of values in this range is suggested for modeling gaseous flows in capillaries and nano-structured, porous, or fractured media if other direct measured values for a particular medium are unavailable.

42 ENGINEERING↗
DOE OSTI2023

Ion-beam-assisted growth of cesium-antimonide photocathodes

We report on the novel use of a Cs+ ion gun for an ion-beam-assisted molecular-beam-epitaxy (IBA-MBE) method to sequentially deposit Cs-Sb cathodes on room temperature substrates as opposed to the standard technique of thermal evaporation on elevated-temperature substrates. The details of the ultrahigh-vacuum chamber, the Cs+ ion source, and the growth technique are elaborated. The final quantum efficiency (QE) is reasonably good for Cs-Sb cathodes grown on two different substrates—Si (100) and strontium titanate—and is comparable to the QE of cathodes grown using thermal sources. This suggests that IBA-MBE could be a viable alternative to grow alkali-antimonides without substrate heating, paving the way for the growth of epitaxial alkali-antimonides in a more reproducible fashion, which may help improve the efficiency of photon detectors and accelerator applications that use alkali-antimonides as electron sources.

Engineering↗
DOE OSTI2023

Physical vapor deposition simulator by graphical processor unit ray casting

This paper presents fast, accurate software for modeling physical vapor deposition systems over irregular surfaces. The model is implemented using graphics processing unit (GPU) ray casting. Applied models are viewed as a cross section of the area of interest. Given evaporation rate, time, and angular profiles in a vacuum system, an iterative time-step approach for calculating deposition profiles is calculated in the GPU architecture following a ballistic modeling approach. Thin-film technologies for the electronics industry will require evaporations on complex surfaces. Depending on the nature of the surface, a uniform thin film across the topology is wanted for various device parameters. The ray casting method is tested against various profiles. The code is freely distributed on GitHub (see https://github.com/adam-r-thomas/PVDS).

Engineering↗
DOE OSTI2023

Effect of varying threading dislocation densities on the optical properties of InGaN/GaN quantum wells with intentionally created V-shaped pits

The effect of varying threading dislocation densities on the internal quantum efficiencies (IQEs) of InGaN quantum wells (QWs), with and without intentionally created “V-pits,” is reported here. InGaN QW samples grown on GaN-on-sapphire templates with threading dislocation densities of <1 × 108 and <1 × 109 cm−2 are compared, with and without GaN/InGaN superlattice (SL) layers incorporated to intentionally open up the threading dislocation cores and form large-size “V-pits.” The formation of “V-pits” is confirmed by cross-sectional transmission electron microscopy to initiate from threading dislocations in the SL layers. The densities of the pits are confirmed by plan-view SEM to agree with the substrate threading dislocation densities. The experimental room temperature IQEs of the “V-pit” QW samples are enhanced to 15% ± 1% compared to 6% ± 2% for conventional QW samples. Both conventional and “V-pit” samples show insensitivity to the magnitude of the dislocation densities with respect to IQE performance, while the “V-pit” samples show shifts in the peak emission wavelengths compared to the conventional samples, attributed to strain modulation. This study provides additional understanding of the causes of the observed insensitivity of the IQEs to different threading dislocation densities.

Engineering↗
DOE OSTI2024

Low-temperature electrical properties and barrier inhomogeneities in ITO/β-Ga2O3 Schottky diode

This study reports the electronic properties of the indium tin oxide (ITO)/β-Ga2O3 Schottky diode through the temperature (50–320 K)-dependent current density–voltage, capacitance–voltage, and admittance spectroscopy experiments. The room-temperature turn-on voltage of the ITO/β-Ga2O3 diode was observed to be 0.83 V, and it exhibited a slow increase with decreasing temperature. The ITO/β-Ga2O3 diode's ideality factor (n) varied from 3.92 to 1.05, and the zero-bias Schottky barrier height (φbo) varied from 0.31 to 1.28 eV. The temperature-dependent n and φbo indicate the spatial inhomogeneities of the potential barrier at the Ga2O3-ITO interface. We exploit the Gaussian distribution model to explain the Schottky barrier inhomogeneities, which could be associated with the defects observed by the admittance spectroscopy method.

Engineering↗
DOE OSTI2024

Treatment and aging studies of GaAs(111)B substrates for van der Waals chalcogenide film growth

GaAs(111)B are commercially available substrates widely used for the growth of van der Waals chalcogenide films. Wafer-scale, high-quality crystalline films can be deposited on GaAs(111)B substrates using molecular beam epitaxy. However, two obstacles persist in the use of GaAs(111)B: first, the surface dangling bonds make it challenging for the growth of van der Waals materials; second, the As-terminated surface is prone to aging in air. This study investigated a thermal treatment method for deoxidizing GaAs(111)B substrates while simultaneously passivating the surface dangling bonds with Se. By optimizing the treatment parameters, we obtained a flat and completely deoxidized platform for subsequent film growth, with highly reproducible operations. Furthermore, through first-principle calculations, we find that the most energetically favorable surface of GaAs(111)B after Se passivation consists of 25% As atoms and 75% Se atoms. Finally, we discovered that the common storage method using food-grade vacuum packaging cannot completely prevent substrate aging, and even after thermal treatment, aging still affects subsequent growth. Therefore, we recommend using N2-purged containers for better preservation.

Engineering↗
DOE OSTI2024

Future of plasma etching for microelectronics: Challenges and opportunities

Plasma etching is an essential semiconductor manufacturing technology required to enable the current microelectronics industry. Along with lithographic patterning, thin-film formation methods, and others, plasma etching has dynamically evolved to meet the exponentially growing demands of the microelectronics industry that enables modern society. At this time, plasma etching faces a period of unprecedented changes owing to numerous factors, including aggressive transition to three-dimensional (3D) device architectures, process precision approaching atomic-scale critical dimensions, introduction of new materials, fundamental silicon device limits, and parallel evolution of post-CMOS approaches. The vast growth of the microelectronics industry has emphasized its role in addressing major societal challenges, including questions on the sustainability of the associated energy use, semiconductor manufacturing related emissions of greenhouse gases, and others. The goal of this article is to help both define the challenges for plasma etching and point out effective plasma etching technology options that may play essential roles in defining microelectronics manufacturing in the future. The challenges are accompanied by significant new opportunities, including integrating experiments with various computational approaches such as machine learning/artificial intelligence and progress in computational approaches, including the realization of digital twins of physical etch chambers through hybrid/coupled models. These prospects can enable innovative solutions to problems that were not available during the past 50 years of plasma etch development in the microelectronics industry. To elaborate on these perspectives, the present article brings together the views of various experts on the different topics that will shape plasma etching for microelectronics manufacturing of the future.

Engineering↗
DOE OSTI2022

Science &Technology Review (September 2022)

Computer modeling is essential to scientific research. Models simulate natural phenomena to aid scientists in understanding their underlying principles. While the most complex models running on supercomputers may contain millions of lines of code and generate billions of data points, models never simulate reality perfectly. Experiments—in contrast—have been fundamental to the study of natural phenomena from science’s earliest days. However, some of today’s complex experiments generate too much data for the human mind to interpret.

42 ENGINEERING↗
DOE OSTI2024

An Overview of Electric Vehicle Load Modeling Strategies for Grid Integration Studies

The adoption of electric vehicles (EVs) has emerged as a solution to reduce greenhouse gas emissions in the transportation sector, which has motivated the implementation of public policies to promote their use in several countries. However, the high adoption of EVs poses challenges for the electricity sector, as it would imply an increase in energy demand and possible impacts on the power quality (PQ) of the power grid. Therefore, it is important to conduct EV integration studies in the power grid to determine the amount that can be incorporated without causing problems and identify the areas of the power sector that will require reinforcements. Accurate EV load patterns are required for this type of study that, through mathematical modeling, reflect both the dynamic behavior and the factors that influence the decision to recharge EVs. This article aims to present an overview of EVs, examine the different factors considered in the literature for modeling EV load patterns, and review modeling methods. EV load modeling methods are classified into deterministic, statistical, and machine learning. The article shows that each modeling method has its advantages, disadvantages, and data requirements, ranging from simple load modeling to more accurate models requiring large datasets.

Computer Science↗
DOE OSTI2024

Trust-Based Detection and Mitigation of Cyber Attacks in Distributed Cooperative Control of Islanded AC Microgrids

In this study, we address the challenge of detecting and mitigating cyber attacks in the distributed cooperative control of islanded AC microgrids, with a particular focus on detecting False Data Injection Attacks (FDIAs), a significant threat to the Smart Grid (SG). The SG integrates traditional power systems with communication networks, creating a complex system with numerous vulnerable links, making it a prime target for cyber attacks. These attacks can lead to the disclosure of private data, control network failures, and even blackouts. Unlike machine learning-based approaches that require extensive datasets and mathematical models dependent on accurate system modeling, our method is free from such dependencies. To enhance the microgrid’s resilience against these threats, we propose a resilient control algorithm by introducing a novel trustworthiness parameter into the traditional cooperative control algorithm. Our method evaluates the trustworthiness of distributed energy resources (DERs) based on their voltage measurements and exchanged information, using Kullback-Leibler (KL) divergence to dynamically adjust control actions. We validated our approach through simulations on both the IEEE-34 bus feeder system with eight DERs and a larger microgrid with twenty-two DERs. The results demonstrated a detection accuracy of around 100%, with millisecond range mitigation time, ensuring rapid system recovery. Additionally, our method improved system stability by up to almost 100% under attack scenarios, showcasing its effectiveness in promptly detecting attacks and maintaining system resilience. These findings highlight the potential of our approach to enhance the security and stability of microgrid systems in the face of cyber threats.

Computer Science↗
NASA NTRS1991

An ISU study of asteroid mining

During the 1990 summer session of the International Space University, 59 graduate students from 16 countries carried out a design project on using the resources of near-earth asteroids. The results of the project, whose full report is now available from ISU, are summarized. The student team included people in these fields: architecture, business and management, engineering, life sciences, physical sciences, policy and law, resources and manufacturing, and satellite applications. They designed a project for transporting equipment and personnel to a near-earth asteroid, setting up a mining base there, and hauling products back for use in cislunar space. In addition, they outlined the needed precursor steps, beginning with expansion of present ground-based programs for finding and characterizing near-earth asteroids and continuing with automated flight missions to candidate bodies. (To limit the summer project's scope the actual design of these flight-mission precursors was excluded.) The main conclusions were that asteroid mining may provide an important complement to the future use of lunar resources, with the potential to provide large amounts of water and carbonaceous materials for use off earth. However, the recovery of such materials from presently known asteroids did not show an economic gain under the study assumptions; therefore, asteroid mining cannot yet be considered a prospective business.

Burke, J. D.↗
NASA NTRS2014

Water Reclamation Technology Development at Johnson Space Center

Who We Are: A staff of approximately 14 BS, MS, and PhD‐Level Engineers and Scientists with experience in Aerospace, Civil, Environmental, and Mechanical Engineering, Chemistry, Physical Science and Water Pollution Microbiology. Our Primary Objective: To develop the next generation water recovery system technologies that will support NASA's long duration missions beyond low‐earth orbit.

Callahan, Michael R.↗