Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “growth processes”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 55 records · Page 3

Simulation of Dynamics of PVT Growth: ZnSe

An unsteady model for the simulation of PVT growth process has been developed and applied to growth of ZnSe. The model is capable of tracking the unsteady aspects of the growth process caused by, for example, changes in the system temperature associated with growth, source-depletion, translation of the charge, out-gassing at high temperatures, as well as changes in the source composition during growth. The model predicts the evolution of growth interface morphology as well as the shape of source-gas interface. Thermo-fluid transport in the gas phase is handled by a Low-Mach number unsteady compressible flow formulation. Heat transfer in the crystal, source, and the quartz housing is calculated by the Monte-Carlo technique to capture the variations in the spectral transmittance and index of refraction of the participating media. Simulation results are presented for the growth interface morphology, thermal stresses in the crystal, and growth rate at various stages of growth. The influence of impurity gases on the growth process is also discussed, The simulation results are compared with the experimental observations. The capabilities of the developed tool in addressing other PVT growth processes such as SiC are discussed.

Worlikar, A.↗

Ice Processes and Growth History on Arctic and Sub-Arctic Lakes Using ERS-1 SAR Data

A survey of ice growth and decay processes on a selection of shallow and deep sub-Arctic and Arctic lakes was conducted using radiometrically calibrated ERS-1 SAR images. Time series of radar backscatter data were compiled for selected sites on the lakes during the period ot ice cover (September to June) for the years 1991-1992 and 1992-1993. A variety of lake-ice processes could be observed, and significant changes in backscatter occurred from the time of initial ice formation in autumn until the onset of the spring thaw. Backscatter also varied according to the location and depth of the lakes. The spatial and temporal changes in backscatter were most constant and predictable at the shallow lakes on the North Slope of Alaska. As a consequence, they represent the most promising sites for long-term monitoring and the detection of changes related to global warming and its effects on the polar regions.

Morris, K.↗

Characterization of Minnesota lunar simulant for plant growth

Processing of lunar regolith into a plant growth medium is crucial in the development of a regenerative life support system for a lunar base. Plants, which are the core of such a system, produce food and oxygen for humans and, at the same time, consume carbon dioxide. Because of the scarcity of lunar regolith, simulants must be used to infer its properties and to develop procedures for weathering and chemical analyses. The Minnesota Lunar Simulant (MLS) has been identified to date as the best available simulant for lunar regolith. Results of the dissolution studies reveal that appropriately fertilized MLS can be a suitable medium for plant growth. The techniques used in conducting these studies can be extended to investigate the suitability of actual lunar regolith as a plant growth medium. Dissolution experiments were conducted using the MLS to determine its nutritional and toxicity characteristics for plant growth and to develop weathering and chemical analysis techniques. Two weathering regimes, one with water and one with dilute organic acids simulating the root rhizosphere microenvironment, were investigated. Elemental concentrations were measured using inductively-coupled-plasma (ICP) emission spectrometry and ion chromatography (IC). The geochemical speciation model, MINTEQA2, was used to determine the major solution species and the minerals controlling them. Acidification was found to be a useful method for increasing cation concentrations to meaningful levels. Initial results indicate that MLS weathers to give neutral to slightly basic solutions which contain acceptable amounts of the essential elements required for plant nutrition (i.e., potassium, calcium, magnesium, sulfur, zinc, sodium, silicon, manganese, copper, chlorine, boron, molybdenum, and cobalt). Elements that need to be supplemented include carbon, nitrogen, and perhaps phosphorus and iron. Trace metals in solution were present at nontoxic levels.

Oglesby, James P.↗

Detached Growth of Germanium and Germaniumsilicon

Up to now, detached growth was observed mainly under microgravity, i.e. under the absence of hydrostatic pressure that hinders the formation of a free melt meniscus. the detached growth of germanium doped with gallium was obtained under 1 g conditions, the growth was performed in quartz-glass ampoule. Part of the crystal grew without wall contact, the detached growth was observed in-situ with a CCD-camera as well as after the growth process in form of growth lines and the formation of <111> facets on the crystal surface. GeSi crystal (oriientation: <111>, maximum silicon content: 4 at%, seed material: Ge) was grown in a pBN crucible (excluding the possibility of in-situ monitoring of the growth process). The grown crystal exhibits three growth facets, indicating also wall free growth. Surface analysis of the crystals (NDIC, SEM) and characterization of crystal segregation (EDAX, resistivity measurement) and defect structure (EPD, x-ray diffraction measurements) will be presented.

Dold, P.↗

Vapor Growth of Binary and Ternary Chalcogenides in Preparation for Microgravity Experiments

In the bulk crystal growth of some technologically important semiconducting chalcopyrites, such as ZnTe, CdS, ZnSe and ZnS, vapor growth techniques have significant advantages over melt growth techniques due to the high melting points of these materials. The realization of routine production of high-quality single crystals of these semiconductors requires a fundamental, systematic and in-depth study on the PVT growth process and crystal growth by vapor transport in low gravity offers a set of unique conditions for this study. Previously, two reasons have been put forward to account for this. The first is weight-related reductions in crystal strain and defects. These are thought to be caused by the weight of the crystals during processing at elevated temperatures and retained on cooling, particularly for materials with a low yield strength. The second, and more general, reason is related to the reduction in density-gradient driven convection. The PVT crystal growth process consists of essentially three processes: sublimation of the source material, transport of the vapor species and condensation of the vapor species to form the crystal. The latter two processes can be affected by the convection caused by gravitational accelerations on Earth. Reductions in such convection in low gravity is expected to yield a nearly diffusion-limited growth condition which results in more uniform growth rates (on the microscopic scale) and hence greater crystalline perfection and compositional homogeneity. The reduction of convective contamination by performing flight experiments in a reduced gravity environment will help to understand the relation between fluid phase processes (growth parameters) and defect and impurity incorporation in grown crystals.

Su, C.↗

Vapor Growth of Binary and Ternary Chalcogenides in Preparation for Microgravity Experiments

In the bulk crystal growth of some technologically important semiconducting chalcopyrites, such as ZnTe, CdS, ZnSe and ZnS, vapor growth techniques have significant advantages over melt growth techniques due to the high melting points of these materials. The realization of routine production of high-quality single crystals of these semiconductors requires a fundamental, systematic and in-depth study on the PVT growth process and crystal growth by vapor transport in low gravity offers a set of unique conditions for this study. Previously, two reasons have been put forward to account for this. The first is weight-related reductions in crystal strain and defects. These are thought to be caused by the weight of the crystals during processing at elevated temperatures and retained on cooling, particularly for materials with a low yield strength. The second, and more general, reason is related to the reduction in density-gradient driven convection. The PVT crystal growth process consists of essentially three processes: sublimation of the source material, transport of the vapor species and condensation of the vapor species to form the crystal. The latter two processes can be affected by the convection caused by gravitational accelerations on Earth. Reductions in such convection in low gravity is expected to yield a nearly diffusion-limited growth condition which results in more uniform growth rates (on the microscopic scale) and hence greater crystalline perfection and compositional homogeneity. The reduction of convective contamination by performing flight experiments in a reduced gravity environment will help to understand the relation between fluid phase processes (growth parameters) and defect and impurity incorporation in grown crystals.

Su, Ching-Hua↗

Large Area Silicon Sheet by EFG

Progress made in the development of EFG ribbon growth is discussed. Specific areas covered include: (1) demonstration of multiple growth for ribbons 5 cm wide in runs of 12 and 20 hours duration; (2) a single cartridge crystal growth station was built expanding observational capacity by virtue of an anamorphic optical-video system which allows close observation of the meniscus over 7.5 cm wide, as well as video taping of the ribbon growth process; (3) growth station no.1 achieved reproducible and reliable growth of 7.5 cm wide ribbon at speeds up to 4 cm/min; (4) introduction of the 'mini cold shoe'; (5) increases in cell efficiency due to interface shaping using the 'displaced die' concept; and (6) clarification of the role of gaseous impurities in cartridge furnaces and stabilization of their destabilizing influence on growth.

Wald, F. V.↗

Convective heat transfer during dendritic growth

Axial growth rate measurements were carried out at 17 levels of supercooling between 0.043 C and 2 C, a temperature range in which convection, instead of diffusion, becomes the controlling mechanism of heat transfer in the dentritic growth process. The growth velocity, normalized to that expected for pure diffusive heat transfer, displays a dependence on orientation. The ratio of the observed growth velocity to that for convection-free growth and the coefficients of supercooling are formulated. The dependence of normalized growth rate in supercooling is described for downward growing dendrites. These experimental correlations can be justified theoretically only to a limited extent.

Glicksman, M. E.↗

Microgravity sciences application visiting scientist program

Contract NAS8-38785, Microgravity Experimental and Theoretical Research, is a project involving a large number of individual research programs related to: determination of the structure of human serum albumin and other biomedically important proteins; analysis of thermodynamic properties of various proteins and models of protein nucleation; development of experimental techniques for the growth of protein crystals in space; study of the physics of electrical double layers in the mechanics of liquid interfaces; computational analysis of vapor crystal growth processes in microgravity; analysis of the influence of magnetic fields in damping residual flows in directional solidification processes; crystal growth and characterization of II-VI semiconductor alloys; and production of thin films for nonlinear optics. It is not intended that the programs will be necessarily limited to this set at any one time. The visiting scientists accomplishing these programs shall serve on-site at MSFC to take advantage of existing laboratory facilities and the daily opportunities for technical communications with various senior scientists.

Source record↗

Determining the Molecular Growth Mechanisms of Tetragonal Lysozyme Crystals

Studies of the growth of tetragonal lysozyme crystals employing atomic force microscopy (AFM) have shown the advantages of this technique in investigating the growth mechanisms of protein crystals [1]. The resolution of these studies was in the micron range, which revealed surface features such as the occurrence of dislocations and 2D nucleation islands, similar to those found in inorganic systems. They clearly showed that the crystals grew by these surface growth mechanisms. However, the studies also revealed some surprising features, such as bimolecular growth step heights and pronounced growth anisotropies on the (110) face, which could not be explained. In previous studies we employed Periodic Bond Chain (PBC) theory to tetragonal lysozyme crystal growth and found that the crystals were constructed by strongly bonded molecular chains forming helices about the 43 axes [2,3]. The helices were connected to each other with weaker bonds. The growth process was shown to proceed by the formation of these 43 helices, resulting in bimolecular growth steps on the (110) face. It was also shown to explain many other observations on tetragonal lysozyme crystal growth. Although PBC analysis is not a new technique [4], it has not been widely used as the mechanisms predicted from it could not be experimentally verified. In this study the growth process of these crystals was investigated, particularly for the (110) face, employing some newly developed high resolution AFM techniques. These techniques allowed individual lysozyme molecules on the crystal faces to be resolved and predictions from PBC analyses to be tested. The analyses had shown that of the two possible packing arrangements on (110) faces, only one would actually occur. Employing the first of the newly developed techniques, these faces were scanned by high resolution AFM. The resulting images were then compared with the theoretically constructed images for the two possible packing arrangements on the (110) face. The theoretical images were constructed by convolution of the crystal surface shape obtained from crystallographic data with the AFM tip shape. The comparison confirmed the prediction that the molecular packing arrangement of these faces corresponded to that for complete 43 helices. The second AFM technique that was developed was used to follow the growth process by measuring the dimensions of individual growth units on the (110) face. Linescans across a growth step, performed near the saturation limit of the crystals, allowed the growth unit dimensions to be measured. These measurements showed that growth on the (110) face proceeded by the formation of new 43 helices from the addition of at least tetramer units in the [110] direction. In the [001] direction growth proceeded by the addition of various aggregate units corresponding to the 4(sub 3) helices.

Li, Huayu↗

Microstructure and growth model for rice-hull-derived SiC whiskers

The microstructure of silicon carbide whiskers grown from rice hulls has been studied using methods of high-resolution analytical electron microscopy. Small, partially crystalline inclusions (about 10 nm) containing calcium, manganese, and oxygen are concentrated in whisker core regions, while peripheral regions are generally inclusion free. The distinct microphase distribution is evidence of a two-stage growth process in which the core region grows first, followed by normal growth toward whisker sides. Partial dislocations extend radially from the core region to the surface and tend to be paired in V-shaped configurations. Whisker surfaces exhibit microroughness due to a tendency to develop small facets on close-packed planes. The microstructural data obtained from TEM observations are used as a basis for discussion of the mechanisms involved in whisker growth, and a model of the growth process is proposed. The model includes a two-dimensional growth mechanism involving vapor, liquid, and solid phases, although it is significantly different from the classical vapor-liquid-solid (VLS) process of whisker growth.

Nutt, Steven R.↗

Photoluminescence Studies of ZnSe Starting Materials and Vapor Grown Bulk Crystals

Low-temperature photoluminescence (PL) spectra and glow discharge mass spectroscopy (GDMS) were measured on ZnSe starting materials provided by various vendors and on bulk crystals grown from these starting materials by physical vapor transport (PVT) to study the effects of purification and contamination during crystal growth process. The purification effect of pre-growth heat treatments and the PVT process is evidenced from the GDMS results which showed orders of magnitude reduction in the Li and Na concentration and a factor of 3 reduction in the 0 content after growth. The PL spectra showed that the strong emissions associated with Li (or Na) in one of the starting materials disappeared after growth. To evaluate the contamination of the crystal during the high temperature growth process three growth runs were processed using similar growth parameters but with different furnace environments. The GDMS results showed orders of magnitude increase in the Al and Si contents after growth. The PL spectra suggest that the Al contamination was originated from the fused silica ampoule and the Inconel cartridge might have been the cause for the broad Cu green and Cu red bands observed in one of the grown crystal.

Su, Ching-Hua↗

Global Observation of Substorm Growth Phase Processes in the Polar Caps

Global images of the polar cap region during the substorm growth phase by the Polar Ultraviolet Imager reveals evidence of the processes which are not completely explained by current models. In particular, it was found that size of the polar cap region increases during the growth phase even if the interplanetary magnetic field has no southward component. Three phenomena were observed to produce an increase in the size of the polar cap: (1) motion of the auroral oval to lower latitude, (2) thinning of the auroral oval, and (3) reduction of intense aurora[ precipitation in the polar region. Correlation of image intensities with in situ particle measurements from the FAST satellite are being conducted to study the three growth phase phenomena; and to help identify the source regions of the particles, the mechanisms involved in producing the auroral structures and what may be reducing the polar cap precipitation during the substorm growth phase.

Brittnacher, M.↗

An electric current associated with gravity sensing in maize roots

The study of gravisensing would be greatly enhanced if physiological events associated with gravity sensing could be detected separately from subsequent growth processes. This report presents a means to discriminate sensing from the growth processes. By using a vibrating probe, we have found an electric current generated by the gravity sensing region of the root cap of maize (Zea mays cv Merit) in response to gravistimulation. On the upper surface of the root cap, the change from the endogenous current has a density of 0.55 microampere per square centimeter away from gravity. The onset of the current shift has a characteristic of lag of three to four minutes after gravistimulation, which corresponds to the presentation time for gravity sensing in this tissue. A description of the current provides some information about the sensing mechanism, as well as being a valuable means to detect gravity sensing independently of differential growth.

NASA Discipline Number 40-10↗

Thermal-capillary analysis of Czochralski and liquid encapsulated Czochralski crystal growth. II - Processing strategies

The pseudosteady-state heat transfer model developed in a previous paper is augmented with constraints for constant crystal radius and melt/solid interface deflection. Combinations of growth rate, and crucible and bottom-heater temperatures are tested as processing parameters for satisfying the constrained thermal-capillary problem over a range of melt volumes corresponding to the sequence occuring during the batchwise Czochralski growth of a small-diameter silicon crystal. The applicability of each processing strategy is judged by the range of existence of the solution, in terms of melt volume and the values of the axial and radial temperature gradients in the crystal.

Derby, J. J.↗

Compound equation developed for postnatal growth of birds and mammals

Compound growth equation was developed in which the rate of this linear growth process is regarded as proportional to the mass already attained at any instant by an underlying Gompertz process. This compound growth model was fitted to the growth data of a variety of birds and mammals of both sexes.

Laird, A. K.↗

Melt Stabilization of PbSnTe in a Magnetic Field

Both the experimental observation and numerical simulation indicate that the Bridgman growth of PbSnTe under the microgravity environment in space is still greatly influenced by buoyancy-induced convection. The application of a magnetic field during the semiconductor growth can dampen the convective flow in the metal-like melt. However, for Bridgman growth of PbSnTe on earth (with either vertical or horizontal configuration), both experimental observation and numerical modeling suggest that even with a strong magnetic furnace (5-Tesla constant axial magnetic field), the convective flow in the melt still cannot be sufficiently suppressed to reach the diffusion-controlled level. In order to completely dampen the buoyancy-induced convection on earth, estimates based on scaling analysis indicate that for common experimental conditions, an extremely high magnetic field is required, far beyond the capacity of the experimental apparatus currently available. Therefore, it is proposed that only the combination of microgravity environment and magnetic damping will produce the desired diffusion-controlled growth state for this particular material. The primary objectives of this study are to provide a quantitative understanding of the complex transport phenomena during solidification of non-dilute binarys, to furnish a numerical tool for furnace design and growth condition optimization, to provide estimates of the required magnetic field strength for low gravity growth, and to assess the role of magnetic damping for space and earth control of the double-diffusive convection. As an integral part of a NASA research program, our numerical simulation supports both the flight and ground-based experiments in an effort to bring together a complete picture of the complex physical phenomena involved in the crystal growth process. For Bridgman growth of PbSnTe under microgravity (with both vertical and horizontal configurations), the simulations suggest that a moderate axial magnetic field of only a few kilo-Gauss in strength could effectively eliminate buoyancy-induced convection in the melt and control solute segregation. Therefore, this work confirms the idea that the combination of microgravity environment and the magnetic damping will indeed be sufficient to produce the desired diffusion-controlled growth state for PbSnTe.

Fripp, Archibald L.↗

Interface Shape and Growth Rate Analysis of Se/GaAs Bulk Crystals Grown in the NASA Crystal Growth Furnace (CGF)

Selenium-doped gallium arsenide, Se/GaAs, bulk crystals have been grown on earth using NASA's crystal growth furnace (CGF) in preparation for microgravity experimentation on the USML-2 spacelab mission. Peltier cooling pulses of 50 ms duration, 2040 A magnitude, and 0.0033 Hz frequency were used to successfully demark the melt-solid interface at known times during the crystal growth process. Post-growth characterization included interface shape measurement, growth rate calculation, and growth rate transient determinations. It was found that the interface shapes were always slightly concave into the solid. The curvature of the seeding interfaces was typically 1.5 mm for the 15 mm diameter samples. This was in agreement with the predicted interface shapes and positions relative to the furnace determined using a numerical model of the sample/ampoule/cartridge assembly (SACA).

Bly, J. M.↗