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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Investigation of coherence of niobium-based resonators enabled by a fast-sealing microwave cavity

Resonators and qubits with a niobium (Nb) base metal layer achieve some of the highest coherence times in superconducting quantum devices. The performance of such devices is often limited by loss associated with two-level systems, which are found primarily at material surfaces and interfaces. The metal-air (MA) interface is a major contributor to device loss. In this work, we develop a fast-sealing microwave cavity that enables devices to be placed under vacuum within five minutes of oxide removal, thereby significantly reducing the MA interface loss compared to common device processing and packaging approaches. Using coplanar stripline resonators, we demonstrate that devices sealed in such a cavity exhibit internal quality factors exceeding one million at single-photon power. After re-exposure to air, the devices show downward resonance frequency shifts and quality factor degradations, quantitatively consistent with a model of Nb oxide regrowth. The fast-sealing microwave cavity provides a practical and consistent method to mitigate MA interface loss and sustain high coherence in Nb devices, and establishes a controlled platform for studying metal oxide regrowth kinetics and dielectric properties, the understanding of which is critical to achieving high coherence in superconducting quantum devices.

Zhang, C. [Waterloo U., IQC; Waterloo U.]↗
DOE OSTI2021

Electric-Drive Vehicle Power Electronics Thermal Management: Current Status, Challenges, and Future Directions

Effective thermal management of traction-drive power electronics is critical to the advancement of electric-drive vehicles and is necessary for increasing power density and improving reliability. Replacing traditional silicon devices with more efficient, higher temperature, higher voltage, and higher frequency wide-bandgap (WBG) devices will enable increased power density but will result in higher device heat fluxes. Compact packaging of high-temperature WBG devices near low-temperature-rated components creates thermal management challenges that need to be addressed for future power-dense systems. This paper summarizes the thermal performance of on-road automotive power electronics thermal management systems and provides thermal performance and pumping-power metrics for select vehicles. Thermal analyses reveal that the package/conduction resistance dominates the total thermal resistance (for existing automotive systems). We model advanced packaging concepts and compare the results with existing packaging designs to quantify their thermal performance enhancements. Double-side-cooled configurations that do not use thermal interface materials are package concepts predicted to provide a low junction-to-fluid thermal resistance (compared to current packages). Dielectric-fluid-cooled concepts enable a redesign of the package to reduce the package resistance, can be implemented in single- and two-phase cooling approaches, and allow for cooling of passive components (e.g., capacitors) and bus bars.

33 ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2025

Dispatch Manager for NEML2 Constitutive Model Calculations Embedded in MOOSE

This report describes the extended capabilities of the NEML2 constitutive modeling library, including a flexible and efficient work dispatching system designed to leverage both CPU and GPU resources. This enhancement addresses one of the primary computational challenges in large-scale simulations: the ability to distribute and execute batches of material model evaluations across heterogeneous computing devices. The new dispatch system introduces a modular set of dispatcher and scheduler classes that coordinate the flow of data and execution between devices. The dispatcher is responsible for efficiently packaging work, managing device-specific memory operations, and synchronizing results. This modularity allows for extensibility, making it straightforward to integrate additional computing backends in the future. From an implementation standpoint, the dispatcher system interfaces seamlessly with NEML2's existing models. They handle device-aware tensor operations, optimize memory transfers, and support asynchronous execution when applicable. This design ensures that batches of material points can be evaluated concurrently, substantially improving throughput compared to previous single-device or serial implementations. These improvements not only enhance the raw performance of NEML2 but also improve its usability in multiscale and high-fidelity simulations, where the simultaneous evaluation of large material point batches is critical. Benchmarks included in the report demonstrate the system’s scalability, highlighting its effectiveness when leveraging modern GPU architectures.

22 GENERAL STUDIES OF NUCLEAR REACTORS↗
DOE OSTI2021

Thermal and Mechanical Design of a High-Voltage Power Electronics Package

This paper presents the thermal and mechanical design aspects of a power electronics package with 5-kV GaN devices. Through finite element analyses, we investigated the impact of different cooling configurations and device locations on the thermal performance and reliability of the package. We found that placing the devices closer to the direct bond copper substrate as opposed to a centered approach in the proposed double-sided cooling configuration resulted in improved heat dissipation. This approach also reduced the total number of attachment layers, thereby likely improving the reliability of the package. Furthermore, simulations revealed that the device location had a negligible impact on the thermomechanical behavior of the attachment layers, as they are more prone to the local coefficient of thermal expansion mismatch.

electronic packaging↗
DOE OSTI2021

Thermal and Mechanical Design of a High-Voltage Power Electronics Package: Preprint

Thermal and mechanical design aspects of a power electronic package with 5-kV GaN devices are presented. Through finite element analyses, the impact of different cooling configurations and device location on the thermal performance and reliability of the package was investigated. It was found that placing the devices closer to the direct-bond-copper substrate as opposed to a centered approach in the proposed double-sided-cooling configuration resulted in improved heat dissipation. This approach also reduced the total number of attachment layers, thereby likely improving the reliability of the package. Furthermore, simulations revealed that the device location had a negligible impact on the thermomechanical behavior of the attachment layers, as they are more prone to the local coefficient of thermal expansion mismatch.

27 ARPA - Advanced Research Projects Agency-Energy↗
DOE OSTI2024

Abatement of ionizing radiation for superconducting quantum devices

Ionizing radiation has been shown to reduce the performance of superconducting quantum circuits. In this report, we evaluate the expected contributions of different sources of ambient radioactivity for typical superconducting qubit experiment platforms. Our assessment of radioactivity inside a typical cryostat highlights the importance of selecting appropriate materials for the experiment components nearest to qubit devices, such as packaging and electrical interconnects. We present a shallow underground facility (30-meter water equivalent) to reduce the flux of cosmic rays and a lead shielded cryostat to abate the naturally occurring radiogenic gamma-ray flux in the laboratory environment. We predict that superconducting qubit devices operated in this facility could experience a reduced rate of correlated multi-qubit errors by a factor of approximately 20 relative to the rate in a typical above-ground, unshielded facility. Finally, we outline overall design improvements that would be required to further reduce the residual ionizing radiation rate, down to the limit of current generation direct detection dark matter experiments.

47 OTHER INSTRUMENTATION↗
DOE OSTI2020

Power Electronics Materials and Bonded Interfaces - Reliability and Lifetime

The emergence of wide-bandgap (WBG) devices in power electronics packages has brought significant attention to the reliability and thermal performance of the bonded interfaces. These interfaces, such as die-attach and substrate-attach, need to withstand the severe stress induced on them by the high-temperature (> 200°C) operation of the WBG devices. Sintered silver and transient liquid phase alloys are key bonded interfaces that can enable the high-temperature operation of WBG devices, however it is essential to evaluate their reliability and study the possible failure mechanisms before they can be used in power electronics packages. Sintered silver is already being adopted in commercial packages as a die-attach, but large-area substrate-attach offers additional reliability challenges. In this project, we investigate the reliability of these interface materials under accelerated thermal cycling and correlate these results with finite element simulations to develop lifetime prediction models. The failure mechanisms of these bonded interfaces are also studied.

47 OTHER INSTRUMENTATION↗
DOE OSTI2022

Perovskite Photovoltaics: Venturing Outdoors

Metal halide perovskite solar cells have shown promising performance, but mainly on small-area devices and under laboratory conditions. Now, researchers have demonstrated the fabrication of large-area devices assembled and packaged into modules and reported on their operation outdoors.

field testing↗
DOE OSTI2021

A perspective on the electro-thermal co-design of ultra-wide bandgap lateral devices

Fundamental research and development of ultra-wide bandgap (UWBG) semiconductor devices are under way to realize next-generation power conversion and wireless communication systems. Devices based on aluminum gallium nitride (AlxGa1-xN, x is the Al composition), ..beta..-phase gallium oxide (..beta..-Ga2O3), and diamond give promise to the development of power switching devices and radio frequency power amplifiers with higher performance and efficiency than commercial wide bandgap semiconductor devices based on gallium nitride (GaN) and silicon carbide (SiC). However, one of the most critical challenges for the successful deployment of UWBG device technologies is to overcome adverse thermal effects that impact the device performance and reliability. Overheating of UWBG devices originates from the projected high power density operation and poor intrinsic thermal properties of AlxGa1-xN and ..beta..-Ga2O3. This Perspective delineates the need and process for the "electro-thermal co-design" of laterally configured UWBG electronic devices and provides a comprehensive review of current state-of-the-art thermal characterization methods, device thermal modeling practices, and both device- and package-level thermal management solutions.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Power Electronics Materials and Bonded Interfaces - Reliability and Lifetime

Wide-bandgap devices have pushed the operational limit of semiconductor devices in automotive power electronics packages to higher temperatures (>200 C). While a higher efficiency can be achieved through the use of wide-bandgap devices, the entire package must be re-designed with components that can withstand the higher temperature limits. Sintered silver and transient liquid phase bonds are potential candidates as bonded materials for use in higher temperatures however, the underlying mechanics of deformation under thermal loads and the resulting failure mechanisms in these materials are not well understood. Accelerated experiments conducted at NREL reveal that high-lead solder joints have better reliability than sintered silver under extreme thermal cycling conditions. Furthermore, efforts to develop a crack propagation model for the high-temperature materials are described.

ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2022

Achieving American Leadership in the Semiconductors Supply Chain Factsheet

Semiconductors are a keystone technology that are essential for the operation of every electronic device, including those that are critical to a clean energy economy. The semiconductor industry has a complex, competitive, and highly integrated international supply chain in which the United States has historically enjoyed a dominant position, but where this position has been eroding over time. In 1995, 26% of global semiconductor manufacturing capacity was located in the United States; this had decreased to 10% by 2020. Investments in key semiconductor manufacturing technologies such as high-voltage power electronics, energy-efficient conventional devices, and advanced packaging point the way to secure a strong domestic semiconductor industrial base.

Source record↗
DOE OSTI2022

Bonded Interfaces for High-Temperature Power Electronics

Wide-bandgap devices have pushed the operational limit of semiconductor devices in automotive power electronics packages to higher temperatures (>200 degrees C). While a higher efficiency can be achieved through the use of wide-bandgap devices, the entire package must be re-designed with components that can withstand the higher temperature limits. Sintered silver and transient liquid phase bonds are potential candidates as bonded materials for use in higher temperatures however, the underlying mechanics of deformation under thermal loads and the resulting failure mechanisms in these materials are not well understood. Furthermore, thermomechanical modeling plays a key role in understanding the degradation behavior of bonded interface materials and for design optimization of power electronics packages.

ADVANCED PROPULSION SYSTEMS,DIRECT ENERGY CONVERSI↗
DOE OSTI2021

Packaging of an 8-kV Silicon Carbide Diode Module with Double-Side Cooling and Sintered-Silver Joints

Packaging innovations are needed for medium-voltage wide bandgap power semiconductor modules to enable their adaptation in grid applications. A unique challenge for packaging medium-voltage power modules is managing the trade-off between insulation demand and heat dissipation. The focus of this work was on developing a packaging innovation that improves the module heat dissipation and offers more flexibility to its insulation design. Two strategies were explored for the packaging of an 8-kV SiC diode rectifier module:(1) double-side cooling and (2) sintered-silver bonding. Double-side cooling was realized by using short metal posts rather than long and thin wire bonds for device interconnection, forming a low-profile package with devices sandwiched between two insulated metal substrates. Sintered-silver bonding enabled the devices to function reliably at over 250 °C. Simulations of the packaged module showed a low interconnect inductance of 2.67 nH and a 50% less heat transfer coefficient required to cool the chips. Prototypes of the module were fabricated, and preliminary electrical testing results validated the package design.

27 ARPA - Advanced Research Projects Agency-Energy↗
DOE OSTI2025

Organic Direct-Bonded-Copper-Based Rapid Prototyping for Silicon Carbide Power Module Packaging

Silicon carbide (SiC) power devices are playing ever- growing roles in high-power-density power electronics converters by offering benefits such as high voltage rating, fast transients, and high thermal performance. Organic direct-bonded copper (ODBC)-based packaging, due to its ductility and ease of han- dling, allows the possibility of a more flexible layout design that may better tap the potential of SiC benefits. In this work, an ODBC-based prototyping routine is developed that accelerates the iterations of packaging layout design with low cost. The properties of ODBC and its handling are briefly introduced, and tools and fabrication steps are explained. Following this routine, a 1.2-kV SiC half-bridge power module is designed and fabricated with the focus on sub-nanohenry ultra-low loop inductance. Simulation and experimental validation are also conducted.

25 ENERGY STORAGE↗
DOE OSTI2020

Injectable and implantable cellular-scale electronic devices

Provided are implantable or surface mounted biomedical devices and related methods for interfacing with a target tissue. The devices have a substrate and device component supported by the substrate. The components of the device are specially configured and packaged to be ultra-thin and mechanically compliant. In particular, device thicknesses are less than 1 mm and have lateral dimensions between about 1 m and 10 mm, depending on the application. Delivery substrates may be incorporated to assist with device implantation and handling. The devices can be shaped to provide injection in a minimally invasive manner, thereby avoiding unnecessary tissue damage and providing a platform for long-term implantation for interfacing with biological tissue.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Wireless optofluidic systems for programmable in vivo pharmacology and optogenetics

Provided are implantable, injectable and/or surface mounted biomedical devices and related methods for interfacing with a target tissue. The devices have a substrate, one or more microfluidic channels embedded in or supported by the substrate and a fluid actuator in operational communication with one or more reservoirs and responsive to a wireless control signal. The components of the device are specially configured and packaged to be ultra-thin and mechanically compliant. In some embodiments, the devices are self-powered and fully implantable. The devices can be shaped to provide injection in a minimally invasive manner, thereby avoiding unnecessary tissue damage and providing a platform for long-term implantation for interfacing with biological tissue.

Rogers, John A.↗
DOE OSTI2022

Design Considerations for Developing 1.2 kV 4H-SiC BiDFET-enabled Power Conversion Systems

Bidirectional switches are essential for cycloconverter and matrix converter applications to facilitate single-stage AC-AC conversion without intermediate energy storage elements. The 1.2 kV 4H-SiC BiDFET was developed as the first monolithic bidirectional SiC power transistor. This paper describes the design considerations taken into account while creating the BiDFET device and developing custom packages for housing the switch in discrete form for low power applications and in module form for high-power applications. The realized switches are characterized for their on-state and switching performance. The versatility of the BiDFET device is demonstrated by operating a single BiDFET H-bridge in voltage-source-inverter and current-source-inverter topologies only by varying the gate bias on the individual BiDFETs and reversing the input-output connections.

Bidirectional, Silicon Carbide, Half-Bridge Module↗