DOE OSTI · 1843200
Bonded Interfaces for High-Temperature Power Electronics
Abstract
Wide-bandgap devices have pushed the operational limit of semiconductor devices in automotive power electronics packages to higher temperatures (>200 degrees C). While a higher efficiency can be achieved through the use of wide-bandgap devices, the entire package must be re-designed with components that can withstand the higher temperature limits. Sintered silver and transient liquid phase bonds are potential candidates as bonded materials for use in higher temperatures however, the underlying mechanics of deformation under thermal loads and the resulting failure mechanisms in these materials are not well understood. Furthermore, thermomechanical modeling plays a key role in understanding the degradation behavior of bonded interface materials and for design optimization of power electronics packages.
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Paret, Paul (ORCID:0000000312660922). 2022-01-26. Bonded Interfaces for High-Temperature Power Electronics. https://www.osti.gov/biblio/1843200
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