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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Ion-implanted Al0.6Ga0.4N deep-ultraviolet avalanche photodiodes

A deep-ultraviolet Al0.6Ga0.4N p–i–n avalanche photodiode (APD) structure was grown on a (0001) AlN bulk substrate by metalorganic chemical vapor deposition. The wafer was fabricated into 20 μm diameter mesa APD devices both with and without ion-implantation with nitrogen ions on the periphery of the p-type region of the diode mesa and tested. The dark current density vs bias, photoresponse, and the optical gain of the APDs with and without ion implantation were compared. The devices fabricated with ion implantation showed improved performance, exhibiting lower dark current densities of ∼1 × 10−9 A/cm2 and a higher optical gain of ∼5.2 × 105 at a current density limit of 0.3 A/cm2. The average temperature coefficients of the reverse-bias breakdown voltage were also compared. Although the data showed negative coefficients for APDs fabricated both with and without ion implantation, the ion-implanted APDs showed an improvement relative to the devices fabricated without ion-implantation.

Physics↗
DOE OSTI2025

Creating and Probing Large Gap 2D Topological Insulators for Quantum Computing (Final Report)

Research under this award focused on experimental and theoretical efforts in developing and characterizing 2D topological insulators (TIs). Key areas of investigation included materials synthesis, device fabrication and characterization, and theoretical advancements. The team synthesized ZrTe 5 , a material with potential for TI phases. Additionally, the team pursued the synthesis of elemental thin films like Indene and Bismuthene, known for their large TI gaps. Indene was successfully stabilized on SiC. Another approach involved stacking and twisting transition metal dichalcogenides (TMDs) to engineer desired TI band structures. On the theoretical front, advancements made under this award predicted remarkable topological properties in twisted WSe2 bilayers, motivating experimental efforts to realize these states. Regarding device fabrication and characterization, significant progress was made in reducing contact resistance, crucial for reliable transport measurements. Contactless Pulsed Tunneling Spectroscopy (CPTS) was employed to study the electronic properties of WTe 2 and WSe 2 . However, challenges in device fabrication and electrode material selection hampered efforts to obtain desired spectra. Ancillary work, utilizing pulsed electrical methods, on the study of sliding ferroelectrics yielded impactful results demonstrating high speed operation and lack of degradation of devices after many billions of cycles.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
NASA NTRS1995

InP tunnel junction for InGaAs/InP tandem solar cells

Chemical beam epitaxy (CBE) has been shown to allow the growth of high quality materials with reproducible complex compositional and doping profiles. The main advantage of CBE compared to metalorganic chemical vapor deposition (MOCVD), the most popular technique for InP-based photovoltaic device fabrication, is the ability to grow high purity epilayers at much lower temperatures (450-530 C). We have previously shown that CBE is perfectly suited toward the fabrication of complex photovoltaic devices such as InP/InGaAs monolithically integrated tandem solar cells, because its low process temperature preserves the electrical characteristics of the InGaAs tunnel junction commonly used as an ohmic interconnect. In this work using CBE for the fabrication of optically transparent (with respect to the bottom cell) InP tunnel diodes is demonstrated. Epitaxial growth were performed in a Riber CBE 32 system using PH3 and TMIn as III and V precursors. Solid Be (p-type) and Si (n-type) have been used as doping sources, allowing doping levels up to 2 x 10(exp -19)/cu cm and 1 x 10(exp -19)/cu cm for n and p type respectively. The InP tunnel junction characteristics and the influence of the growth's conditions (temperature, growth rate) over its performance have been carefully investigated. InP p(++)/n(++) tunnel junction with peak current densities up to 1600 A/sq cm and maximum specific resistivities (V(sub p)/I(sub p) - peak voltage to peak current ratio) in the range of 10(exp -4) Omega-sq cm were obtained. The obtained peak current densities exceed the highest results previously reported for their lattice matched counterparts, In(0.53)Ga( 0.47)As and should allow the realization of improved minimal absorption losses in the interconnect InP/InGaAs tandem devices for Space applications. Owing to the low process temperature required for the top cell, these devices exhibit almost no degradation of its characteristics after the growth of subsequent thick InP layer suggesting minimal doping cross diffusion in the narrow space-charge region (approximately 1-5 nm) of the device. The fabrication of tandem devices using InP tunnel diodes as interconnect is in progress and will be reported at the conference.

Vilela, M. F.↗
NASA NTRS2010

Solid-state curved focal plane arrays

The present invention relates to curved focal plane arrays. More specifically, the present invention relates to a system and method for making solid-state curved focal plane arrays from standard and high-purity devices that may be matched to a given optical system. There are two ways to make a curved focal plane arrays starting with the fully fabricated device. One way, is to thin the device and conform it to a curvature. A second way, is to back-illuminate a thick device without making a thinned membrane. The thick device is a special class of devices; for example devices fabricated with high purity silicon. One surface of the device (the non VLSI fabricated surface, also referred to as the back surface) can be polished to form a curved surface.

Nikzad, Shouleh↗
DOE OSTI2020

Influence of Process Parameters and Absorber Thickness on Efficiency of Polycrystalline CdSeTe/CdTe Thin Film Solar Cells

Graded absorbers devices with with CdSe 0.4 Te 0.6 (molar basis) and CdTe were fabricated. CdCl 2 treatment time, post-deposition CdCl 2 anneal time and thicknesses of CdSeTe and CdTe layers were varied. Photoluminescence and electrical measurements were performed on the fabricated devices. Results revealed that the individual thicknesses of CdSeTe and CdTe is critical to overall efficiency of the devices. Device fabricated on substrate with 0.5 μm CdSeTe, 3 μm CdTe with rest of process parameters kept unchanged, produced an efficiency of 20.14%. We report highest device efficiency among academia and research institutions.

Shimpi, Tushar↗
DOE OSTI2021

Femtosecond laser fabrication of nanograting-based distributed fiber sensors for extreme environmental applications

Abstract The femtosecond laser has emerged as a powerful tool for micro- and nanoscale device fabrication. Through nonlinear ionization processes, nanometer-sized material modifications can be inscribed in transparent materials for device fabrication. This paper describes femtosecond precision inscription of nanograting in silica fiber cores to form both distributed and point fiber sensors for sensing applications in extreme environmental conditions. Through the use of scanning electron microscope imaging and laser processing optimization, high-temperature stable, Type II femtosecond laser modifications were continuously inscribed, point by point, with only an insertion loss at 1 dB m −1 or 0.001 dB per point sensor device. High-temperature performance of fiber sensors was tested at 1000 °C, which showed a temperature fluctuation of ±5.5 °C over 5 days. The low laser-induced insertion loss in optical fibers enabled the fabrication of a 1.4 m, radiation-resilient distributed fiber sensor. The in-pile testing of the distributed fiber sensor further showed that fiber sensors can execute stable and distributed temperature measurements in extreme radiation environments. Overall, this paper demonstrates that femtosecond-laser-fabricated fiber sensors are suitable measurement devices for applications in extreme environments.

Wang, Mohan (ORCID:0000000166784993)↗
NASA NTRS1985

New outlook on control of crystalline and chemical perfection during growth of silicon

Significant progress has been made in our understanding of the Czochralski crystal growth process with the realization that the incorporation of oxygen into silicon is directly related to the internal gettering capability of wafers during device fabrication. It was also recognized that the electronic properties exhibited by silicon during various stages of device fabrication were significantly affected by the thermal history of the silicon during the post-growth cool-down period. Turbulent melt convection, induced by unavoidable destabilizing thermal gradients, was found to interfere with homogeneous dopant (and oxygen) incorporation and to influence markedly the dynamics of nonequilibrium point defects in the solidified silicon matrix during the cool-down period. In view of the unavoidability of destabilizing thermal gradients in conventional crystal growth configurations, melt stabilization through the application of magnetic fields is generally considered a viable approach. Control of heat input to the melt through heat pipe systems, as used during growth of germanium, cannot be applied to industrial growth of silicon. Recent studies have shown that heat exchange systems located coaxially about a growing crystal can be used to stabilize and control not only heat transfer in the grown crystal, but also in the melt adjacent to the solidification interface.

Witt, A. F.↗
NASA NTRS2013

Nickel-Graphite Composite Compliant Interface and/or Hot Shoe Material

Next-generation high-temperature thermoelectric-power-generating devices will employ segmented architectures and will have to reliably withstand thermally induced mechanical stresses produced during component fabrication, device assembly, and operation. Thermoelectric materials have typically poor mechanical strength, exhibit brittle behavior, and possess a wide range of coefficient of thermal expansion (CTE) values. As a result, the direct bonding at elevated temperatures of these materials to each other to produce segmented leg components is difficult, and often results in localized microcracking at interfaces and mec hanical failure due to the stresses that arise from the CTE mismatch between the various materials. Even in the absence of full mechanical failure, degraded interfaces can lead to increased electrical and thermal resistances, which adversely impact conversion efficiency and power output. The proposed solution is the insertion of a mechanically compliant layer, with high electrical and thermal conductivity, between the low- and high-temperature segments to relieve thermomechanical stresses during device fabrication and operation. This composite material can be used as a stress-relieving layer between the thermoelectric segments and/or between a thermoelectric segment and a hot- or cold-side interconnect material. The material also can be used as a compliant hot shoe. Nickel-coated graphite powders were hot-pressed to form a nickel-graphite composite material. A freestanding thermoelectric segmented leg was fabricated by brazing the compliant pad layer between the high-temperature p- Zintl and low-temperature p-SKD TE segments using Cu-Ag braze foils. The segmented leg stack was heated in vacuum under a compressive load to achieve bonding. The novelty of the innovation is the use of composite material that re duces the thermomechanical stresses en - countered in the construction of high-efficiency, high-temperature therm - o-electric devices. The compliant pad enables the bonding of dissimilar thermoelectric materials while maintaining the desired electrical and thermal properties essential for efficient device operation. The modulus, CTE, electrical, and thermal conductances of the composite can be controlled by varying the ratio of nickel to graphite.

Firdosy, Samad A.↗
NASA NTRS2001

Silicon Carbide Electronic Devices

The status of emerging silicon carbide (SiC) widebandgap semiconductor electronics technology is briefly surveyed. SiC-based electronic devices and circuits are being developed for use in high-temperature, high-power, and/or high-radiation conditions under which conventional semiconductors cannot function. Projected performance benefits of SiC electronics are briefly illustrated for several applications. However, most of these operational benefits of SiC have yet to be realized in actual systems, primarily owing to the fact that the growth techniques of SiC crystals are relatively immature and device fabrication technologies are not yet sufficiently developed to the degree required for widespread, reliable commercial use. Key crystal growth and device fabrication issues that limit the performance and capability of high-temperature and/or high-power SiC electronics are identified. The electrical and material quality differences between emerging SiC and mature silicon electronics technology are highlighted.

Neudeck, P. G.↗
NASA NTRS1992

Progress in silicon carbide semiconductor technology

Silicon carbide semiconductor technology has been advancing rapidly over the last several years. Advances have been made in boule growth, thin film growth, and device fabrication. This paper wi11 review reasons for the renewed interest in SiC, and will review recent developments in both crystal growth and device fabrication.

Powell, J. A.↗
NASA NTRS1993

Nonlinear optical thin films

A focused approach to development and evaluation of organic polymer films for use in optoelectronics is presented. The issues and challenges that are addressed include: (1) material synthesis, purification, and the tailoring of the material properties; (2) deposition of uniform thin films by a variety of methods; (3) characterization of material physical properties (thermal, electrical, optical, and electro-optical); and (4) device fabrication and testing. Photonic materials, devices, and systems were identified as critical technology areas by the Department of Commerce and the Department of Defense. This approach offers strong integration of basic material issues through engineering applications by the development of materials that can be exploited as the active unit in a variety of polymeric thin film devices. Improved materials were developed with unprecedented purity and stability. The absorptive properties can be tailored and controlled to provide significant improvement in propagation losses and nonlinear performance. Furthermore, the materials were incorporated into polymers that are highly compatible with fabrication and patterning processes for integrated optical devices and circuits. By simultaneously addressing the issues of materials development and characterization, keeping device design and fabrication in mind, many obstacles were overcome for implementation of these polymeric materials and devices into systems. We intend to considerably improve the upper use temperature, poling stability, and compatibility with silicon based devices. The principal device application that was targeted is a linear electro-optic modulation etalon. Organic polymers need to be properly designed and coupled with existing integrated circuit technology to create new photonic devices for optical communication, image processing, other laser applications such as harmonic generation, and eventually optical computing. The progression from microscopic sample to a suitable film-forming material in a working device is a complex, multifaceted endeavor. It requires close attention to maintaining the optical properties of the electro-optic active portion of the polymer while manipulating the polymer structure to obtain the desired secondary polymer properties.

Leslie, Thomas M.↗
NASA NTRS1991

Silicon carbide, a semiconductor for space power electronics

After many years of promise as a high temperature semiconductor, silicon carbide (SiC) is finally emerging as a useful electronic material. Recent significant progress that has led to this emergence has been in the areas of crystal growth and device fabrication technology. High quality single-crystal SiC wafers, up to 25 mm in diameter, can now be produced routinely from boules grown by a high temperature (2700 K) sublimation process. Device fabrication processes, including chemical vapor deposition (CVD), in situ doping during CVD, reactive ion etching, oxidation, metallization, etc. have been used to fabricate p-n junction diodes and MOSFETs. The diode was operated to 870 K and the MOSFET to 770 K.

Powell, J. Anthony↗
NASA NTRS1991

Silicon carbide, a semiconductor for space power electronics

After many years of promise as a high temperature semiconductor, silicon carbide (SiC) is finally emerging as a useful electronic material. Recent significant progress that has led to this emergence has been in the area of crystal growth and device fabrication technology. High quality of single-crystal SiC wafers, up to 25 mm in diameter, can now be produced routinely from boules grown by a high temperature (2700 K) sublimation process. Device fabrication processes, including chemical vapor deposition (CVD), in situ doping during CVD, reactive ion etching, oxidation, metallization, etc. have been used to fabricate p-n junction diodes and MOSFETs. The diode was operated to 870 K and the MOSFET to 770 K.

Powell, J. A.↗
NASA NTRS1985

Amorphous silicon photovoltaic modules and test devices design, fabrication and testing

In July of 1984, Hughes and JPL initiated a contract for Hughes to design, fabricate and test 10 thin film Amorphous Silicon (a-Si) photovoltaic power modules. These modules were to be 1 ft x 4 ft in size. They were to be preceded by the delivery of 10 a-Si 4 in. square test devices. This effort is very timely since thin film PV development has progressed to the point where intermediate load power applications are on the horizon. It is important to know if current a-Si submodule design and manufacturing processes yield a product that is compatible with the packaging needed to meet a 20 to 30 year life span expectancy. The term submodule is assigned to an interconnected assembly of 28 a-Si cells deposited on a 1 foot square glass superstrate. These assemblies are equipped with electrical terminations, i.e., copper tabs at the four corners of the inverted submodules. It is these submodules that are to be interconnected and packaged into power modules, as opposed to the interconnected individual crystalline cells packaged into todays PV modules. A discussion of the fabrication methods and results follows.

Vanleeuwen, M.↗
DOE OSTI2021

Carbohydrate-Containing Conjugated Polymers: Solvent-Resistant Materials for Greener Organic Electronics

Organic semiconducting polymers are exciting materials for electronic applications because of their good mechanical and optoelectronic properties. A major advantage of organic semiconductors is their solution processability. This allows access to a variety of simple and cost-effective device fabrication methods compared to the expensive, high-temperature processing methods required for silicon-based electronics. However, these materials often have low solubility, which limits their processing to toxic halogenated solvents. Also, their limited solubility often leads to interfacial mixing during device fabrication. Herein, this work explores the incorporation of environmentally friendly carbohydrate side chains in conjugated polymers to enhance processability in eco-friendly solvents. Moreover, a mild postprocessing treatment was designed to enable solvent resistance. Isoindigo-based polymers with varied ratios of acetyl-protected galactose side chains were synthesized to improve solubility in o-anisole in the protected state, while inducing solvent resistance through intramolecular hydrogen bonding in the deprotected state. Solvent resistance was confirmed both visually upon submersion in various solvents and using UV–visible spectroscopy. Importantly, the mild basic treatment to achieve solvent resistance has no negative impact on the electronic performance of these materials in organic field-effect transistors, even after subsequent submersion in various solvents, making them a valuable platform for the production of green processable multilayer electronics.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Achieving environmental stability in an atomically thin quantum spin Hall insulator via graphene intercalation

Atomic monolayers on semiconductor surfaces represent an emerging class of functional quantum materials in the two-dimensional limit — ranging from superconductors and Mott insulators to ferroelectrics and quantum spin Hall insulators. Indenene, a triangular monolayer of indium with a gap of ~ 120 meV is a quantum spin Hall insulator whose micron-scale epitaxial growth on SiC(0001) makes it technologically relevant. However, its suitability for room-temperature spintronics is challenged by the instability of its topological character in air. It is imperative to develop a strategy to protect the topological nature of indenene during ex situ processing and device fabrication. Here we show that intercalation of indenene into epitaxial graphene provides effective protection from the oxidising environment, while preserving an intact topological character. Our approach opens a rich realm of ex situ experimental opportunities, priming monolayer quantum spin Hall insulators for realistic device fabrication and access to topologically protected edge channels.

36 MATERIALS SCIENCE↗
NASA NTRS2006

Silicon Carbide Technology

Silicon carbide based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide's ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety of applications and systems. These range from greatly improved high-voltage switching for energy savings in public electric power distribution and electric motor drives to more powerful microwave electronics for radar and communications to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile engines. In the particular area of power devices, theoretical appraisals have indicated that SiC power MOSFET's and diode rectifiers would operate over higher voltage and temperature ranges, have superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly rated silicon-based devices [8]. However, these tremendous theoretical advantages have yet to be widely realized in commercially available SiC devices, primarily owing to the fact that SiC's relatively immature crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required for reliable incorporation into most electronic systems. This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences (both good and bad) between SiC electronics technology and the well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale applications. Key crystal growth and device-fabrication issues that presently limit the performance and capability of high-temperature and high-power SiC electronics are identified.

Neudeck, Philip G.↗