Development and fabrication of advanced battery energy storage system Mid-term report, 27 Sep. 1966 - 26 Mar. 1967
Silver-cadmium secondary battery energy storage system using vented cells for manned orbital spacecraft
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Silver-cadmium secondary battery energy storage system using vented cells for manned orbital spacecraft
This poster presents a hardware benchmarking methodology for a 3-layer CNN waveform classifier deployed using ONNX Runtime on an NVIDIA Jetson AGX Orin. The dataset consist of 9 signal types, -30 to +30 dB SNR with 5dB increments. Benchmarking on the Jetson AGX Orin gave an accuracy of 91.9% and GPU throughput of 107,120 predictions/sec (23× faster than CPU). The Jetson GPU reached approximately 27M samples/sec with stable performance but fell below the 40 MHz rate needed for real-time radio feeds. Sustained testing of 5 minutes confirmed stable performance with no memory leaks, establishing a reproducible benchmarking baseline for future edge-deployment optimization.
The report "High Efficiency Centrifugal Compressor for Rotorcraft Applications" documents the work conducted at UTRC under the NRA Contract NNC08CB03C, with cost share 2/3 NASA, and 1/3 UTRC, that has been extended to 4.5 years. The purpose of this effort was to identify key technical barriers to advancing the state-of-the-art of small centrifugal compressor stages; to delineate the measurements required to provide insight into the flow physics of the technical barriers; to design, fabricate, install, and test a state-of-the-art research compressor that is representative of the rear stage of an axial-centrifugal aero-engine; and to acquire detailed aerodynamic performance and research quality data to clarify flow physics and to establish detailed data sets for future application. The design activity centered on meeting the goal set outlined in the NASA solicitation-the design target was to increase efficiency at higher work factor, while also reducing the maximum diameter of the stage. To fit within the existing Small Engine Components Test Facility at NASA Glenn Research Center (GRC) and to facilitate component re-use, certain key design parameters were fixed by UTRC, including impeller tip diameter, impeller rotational speed, and impeller inlet hub and shroud radii. This report describes the design effort of the High Efficiency Centrifugal Compressor stage (HECC) and delineation of measurements, fabrication of the compressor, and the initial tests that were performed. A new High-Efficiency Centrifugal Compressor stage with a very challenging reduction in radius ratio was successfully designed, fabricated and installed at GRC. The testing was successful, with no mechanical problems and the running clearances were achieved without impeller rubs. Overall, measured pressure ratio of 4.68, work factor of 0.81, and at design exit corrected flow rate of 3 lbm/s met the target requirements. Polytropic efficiency of 85.5 percent and stall margin of 7.5 percent were measured at design flow rate and speed. The measured efficiency and stall margin were lower than pre-test CFD predictions by 2.4 percentage points (pt) and 4.5 pt, respectively. Initial impressions from the experimental data indicated that the loss in the efficiency and stall margin can be attributed to a design shortfall in the impeller. However, detailed investigation of experimental data and post-test CFD simulations of higher fidelity than pre-test CFD, and in particular the unsteady CFD simulations and the assessment with a wider range of turbulence models, have indicated that the loss in efficiency is most likely due to the impact of unfavorable unsteady impeller/diffuser interactions induced by diffuser vanes, an impeller/diffuser corrected flow-rate mismatch (and associated incidence levels), and, potentially, flow separation in the radial-to-axial bend. An experimental program with a vaneless diffuser is recommended to evaluate this observation. A subsequent redesign of the diffuser (and the radial-to-axial bend) is also recommended. The diffuser needs to be redesigned to eliminate the mismatching of the impeller and the diffuser, targeting a slightly higher flow capacity. Furthermore, diffuser vanes need to be adjusted to align the incidence angles, to optimize the splitter vane location (both radially and circumferentially), and to minimize the unsteady interactions with the impeller. The radial-to-axial bend needs to be redesigned to eliminate, or at least minimize, the flow separation at the inner wall, and its impact on the flow in the diffuser upstream. Lessons were also learned in terms of CFD methodology and the importance of unsteady CFD simulations for centrifugal compressors was highlighted. Inconsistencies in the implementation of a widely used two-equation turbulence model were identified and corrections are recommended. It was also observed that unsteady simulations for centrifugal compressors require significantly longer integration times than what is current practice in industry.
This paper examines the effect of varying the liquid temperature and pressure on the bubble point pressure for screen channel Liquid Acquisition Devices in cryogenic liquid methane using gaseous helium across a wide range of elevated pressures and temperatures. Testing of a 325 x 2300 Dutch Twill screen sample was conducted in the Cryogenic Components Lab 7 facility at the NASA Glenn Research Center in Cleveland, Ohio. Test conditions ranged from 105 to 160K and 0.0965 – 1.78 MPa. Bubble point is shown to be a strong function of the liquid temperature and a weak function of the amount of subcooling at the LAD screen. The model predicts well for saturated liquid but under predicts the subcooled data.
Trap-assisted nonradiative recombination has been shown to limit the efficiency of optoelectronic devices. While substitutional carbon (C N ) has been suggested to be a nonradiative recombination center in GaN devices, a complete recombination cycle including the two charge-state transition levels has not been previously described. In this work, we investigate the trap-assisted recombination process due to C N in GaN, including multiphonon emission, radiative recombination, trap-assisted Auger–Meitner (TAAM) recombination as well as thermal emission of holes. Our study shows the key role of TAAM processes at the high carrier densities relevant for devices. We also reveal the carrier-density regimes where thermal emission and radiative recombination are expected to play an observable role. Our results highlight that carbon concentrations exceeding ~10 17 cm −3 can have a noticeable impact on device efficiency, not just in GaN active layers but also in InGaN and AlGaN. Furthermore, our comprehensive formalism not only offers detailed results for carbon but also provides a general framework for assessing the multiple processes that participate in trap-assisted recombination in semiconductors.
A battery testing device is described for testing the cells of a multiple-cell battery, the battery having a cover plate with access holes to provide access to the connecting straps between cells. A panel of probe assembly receiving holes is located to correspond to the location of the access holes when the panel is positioned on top of the battery. A probe assembly is positioned within each probe assembly receiving hole, with a spring biased electrically conductive plunger to make electrical contact with the connecting strap through the corresponding access hole when the panel is pushed towards the top of the battery.
Passive evaporative cooling from a damp cloth or vessel can be used for localized cooling of perishables such as food and medicine, drinking water, and even people. Such applications have two key objectives, which are normally in tension with each other: minimizing the water consumption rate and maximizing the cooling (steady-state temperature swing between the cool cloth and the warm surroundings). Here, we present a simple device that delivers higher performance in both metrics simultaneously by adding a perforated aluminum foil sheet suspended over a stagnant air layer to thermally shield the evaporating surface while also facilitating mass transfer. Experimental results demonstrate a simultaneous 10%–25% increase in temperature swing and 2–3× reduction in water consumption rate as compared to conventional evaporative cooling. This improvement is achieved through careful modeling to optimize the coupled heat and mass transfer through the airgap (thermally insulating and vapor permeable) and perforated foil (infrared reflective and vapor permeable).
This paper presents the influential factors which govern screen selection for liquid acquisition devices (LADs) operating in microgravity conditions for future in-space cryogenic propulsion engines and cryogenic propellant depots. Space flight requirements, which include mass flow rate, acceleration level and direction, and thermal environment, dictate screen selection for a particular mission. The five influential factors include bubble point pressure, flow-through-screen pressure drop, wicking rate, screen compliance, and material compatibility. Governing equations and analytical models for these parameters are developed from first principles. A comprehensive survey of the historical data on coarser LAD meshes over four decades of work is conducted, and liquid hydrogen data for finer Dutch Twill meshes (325 x 2300, 450 x 2750, 510 x 3600) from recently concluded experiments is also presented to validate analytical models. Each of these parameters is measurable from ground based tests, making it facile to predict flight system performance. Therefore analytical models in this paper will be valuable for future LAD designs for both cryogenic and storable propulsion systems. Additionally, analysis will be given on the impact of the factors on liquid hydrogen systems.
This paper presents experimental design and test results of the recently concluded 1-g inverted vertical outflow testing of two 325x2300 full scale liquid acquisition device (LAD) channels in liquid hydrogen (LH 2 ). One of the channels had a perforated plate and internal cooling from a thermodynamic vent system (TVS) to enhance performance. The LADs were mounted in a tank to simulate 1-g outflow over a wide range of LH 2 temperatures (20.3 – 24.2 K), pressures (100 – 350 kPa), and flow rates (0.010 – 0.055 kg/s). Results indicate that the breakdown point is dominated by liquid temperature, with a second order dependence on mass flow rate through the LAD. The best performance is always achieved in the coldest liquid states for both channels, consistent with bubble point theory. Higher flow rates cause the standard channel to break down relatively earlier than the TVS cooled channel. Both the internal TVS heat exchanger and subcooling the liquid in the propellant tank are shown to significantly improve LAD performance.
Abstract Wide and ultrawide-bandgap (U/WBG) materials have garnered significant attention within the semiconductor device community due to their potential to enhance device performance through their substantial bandgap properties. These exceptional material characteristics can enable more robust and efficient devices, particularly in scenarios involving high power, high frequency, and extreme environmental conditions. Despite the promising outlook, the physics of UWBG materials remains inadequately understood, leading to a notable gap between theoretical predictions and experimental device behavior. To address this knowledge gap and pinpoint areas where further research can have the most significant impact, this review provides an overview of the progress and limitations in U/WBG materials. The review commences by discussing Gallium Nitride, a more mature WBG material that serves as a foundation for establishing fundamental concepts and addressing associated challenges. Subsequently, the focus shifts to the examination of various UWBG materials, including AlGaN/AlN, Diamond, and Ga 2 O 3 . For each of these materials, the review delves into their unique properties, growth methods, and current state-of-the-art devices, with a primary emphasis on their applications in power and radio-frequency electronics.
Design considerations and performance features of yo-yo despinning mechanisms
Vertical-external-cavity surface-emitting lasers based on amplifying quantum-cascade metasurfaces are demonstrated in the 5–6 THz range for the first time. Enhanced parasitic coupling to lossy surface modes requires updated design guidelines, while elevated losses and lower available material gain limit the scaling of the metasurface period from previous designs. A series of metasurface devices with varying periods employing both uniform and focusing metasurfaces is fabricated and characterized. Reducing the metasurface period below 70% of the free-space wavelength enables devices with superior performance, achieving pulsed operation up to 5.74 THz with peak output powers of 1.3 mW, maximum operating temperatures up to 83 K, and continuous-wave operation up to 54 K with 23 μW of output power. In the best case, single-mode tuning from 5.23–5.73 THz, which corresponds to a 9.1% fractional tuning, is realized with near-Gaussian far-field profiles maintained across the entire range. Finally, these results establish quantum cascade vertical-external-cavity surface-emitting lasers as promising candidates for high-frequency local oscillator applications in heterodyne spectroscopy.
Here, in this study, we investigate the structure-dependent modulation characteristics of all-solid-state three-terminal electrochemical random-access memory (ECRAM) based on an anatase Li x TiO 2 channel. By directly comparing “asymmetric” and “symmetric” ECRAM device architectures, we reveal significant insight into the impact of a non-zero gate-drain open-circuit voltage and its influence on voltage vs. current-controlled gating. We also explore the impact of potentiation/depression write parameters on the symmetry, linearity, and dynamic range of the device response. Together, initial results from optimizing structure and programming approaches yielded unprecedented G max /G min ratios of >1,000 for ECRAM and hundreds of tunable memory states with excellent linearity and symmetry. Simulations based on these ECRAM devices further illustrate the promise of this analog memory technology, achieving near 2% classification error in the MNIST digit recognition benchmark for a range of training parameters compared to a theoretical best of 1.66% and outperforming other device models extracted from the literature.
Existing state-of-the-art wavefront sensing and control setups for the imaging of exoplanets utilize two high-actuator count flat deformable mirrors (DMs) to control both phase and amplitude aberrations. One of the objectives of the Exoplanet Spectroscopy (ExoSpec) project at Goddard Space Flight Center (GSFC) is to improve upon this regime through the development of parabolic deformable mirrors (PDMs), which can address several of the key limitations in existing setups. Specifically, the need for flat DMs to be located in conjugate pupil planes drives unique packaging challenges that can be overcome by allowing the off-axis imaging elements to be controllable as well. In addition, simulations show that the use of deformable powered elements will increase the overall controllable bandwidth, up to 35% over 5-12 lambda/D. To pursue this effort, the ExoSpec group has begun testing a first-generation parabolic DM, which is already informing a second generation design. This paper will provide a comprehensive update on its characterization, including influence function measurements, linearity analysis, closed-loop wavefront control performance, and thermal stability assessment.
Nickel-cadmium spacecraft battery with auxiliary charge control electrode
The influence of noise on quantum dynamics is one of the main factors preventing current quantum processors from performing accurate quantum computations. Sufficient noise characterization and modeling can provide key insights into the effect of noise on quantum algorithms and inform the design of targeted error protection protocols. However, constructing effective noise models that are sparse in model parameters, yet predictive can be challenging. In this work, we present an approach for effective noise modeling of multi-qubit operations on transmon-based devices. Through a comprehensive characterization of seven devices offered by the IBM Quantum Platform, we show that the model can capture and predict a wide range of single- and two-qubit behaviors, including non-Markovian effects resulting from spatiotemporally correlated noise sources. The model’s predictive power is further highlighted through multi-qubit dynamical decoupling demonstrations and an implementation of the variational quantum eigensolver. As a training proxy for the hardware, we show that the model can predict expectation values within a relative error of 0.5%; this is a sevenfold improvement over default hardware noise models. Through these demonstrations, we highlight key error sources in superconducting qubits and illustrate the utility of reduced noise models for predicting hardware dynamics.
A nonvolatile memory device based on protonic transport in oxides has been proposed. The mobile H+ ions are introduced into the SiO2 layer by annealing Si/SiO2/Si structures in H2 at temperatures greater than 500 deg C. This effect has only been observed for confined oxides that have been annealed at greater than or equal to 1100 C prior to the hydrogenation anneal. This includes buried oxides such as Unibond and SIMOX as well as thermal oxides annealed with a polysilicon cap. An applied field moves the charge within the oxide and the charge stops moving when the field is removed. In a memory device, the hydrogen-annealed oxide is the gate oxide and the position of the mobile charge is sensed by the shift of the I-V curve. Much is still not understood about the motion of the charge across the buried oxide. Previous work has assumed that H+ transport and the time it takes to traverse the oxide is governed by interactions within the bulk of the oxide. Based on parameters that affect the transport time, we conclude that H+ trapping and detrapping at the Si/SiO2 interface are more important than H+ interactions within the oxide bulk. These parameters include the applied field, the H+ concentration and the oxide thickness. One consequence is that projections of device write-time based on the previous assumptions of H+ transport mechanisms may be overly optimistic.
Tin(II) sulfide (SnS) is an earth-abundant semiconductor with a direct optical bandgap of ca. 1.1 eV, which makes it a promising absorber material for thin-film photovoltaic (PV) devices. However, existing devices have significant photovoltage deficits, which may be related to the anisotropic structure of the layered Herzenbergite SnS crystal structure. Here, we explore electrochemical deposition as a near room temperature path to oriented SnS crystal films on Mo and FTO substrates and employ vibrating Kelvin probe surface photovoltage (SPV) spectroscopy and J–V measurements to identify conversion losses in them. According to grazing-incidence X-ray diffraction and SEM, the SnS films consist of crystalline microplates with preferred orientation in the [111] and [001] directions. The bare SnS films produce only small and irreversible surface photovoltage signals, due charge trapping and recombination at the SnS surfaces, but addition of a CdS buffer layer lowers the charge recombination rate by 2 orders of magnitude and increases both the photovoltage and its reversibility due to the formation of a p-SnS/n-CdS junction. According to SPV, the FTO/SnS back interface (but not the Mo/SnS interface) forms a detrimental p–n junction that hinders hole transfer. Additional shunting through the relatively open microcrystal SnS layers and a lower conductivity of the FTO substrate explain the low power conversion efficiencies of the final devices (0.18 and 0.10% for the Mo and FTO substrates). Altogether, this work establishes a low-temperature path for the fabrication of crystalline SnS film-based solar cells and identifies the bottlenecks that limit high photoconversion efficiency.