Thin-Film Lithium Niobate Electro-Optic Modulators with Integrated Silicon Photonic Thermo-Optic Phase Shifters
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Boynton, Nicholas↗
SEARCH · Engineering Papers
Results for “Silicon Photonics”
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Low Power and High-Speed Silicon Photonics Based All Optical Image Compression
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Sarma, Raktim↗
Silicon Photonics: High-Performance Modulators for Cold Atom Interferometry
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Kodigala, Ashok [Sandia National Laboratories (SNL↗
Piezo-optomechanical control of silicon photonic resonator with CMOS compatability.
Abstract not provided.
Talcott, Gina↗
Silicon-On-Silicon Carbide Platform for Integrated Photonics
Silicon carbide (SiC)'s nonlinear optical properties and applications to quantum information have recently brought attention to its potential as an integrated photonics platform. However, despite its many excellent material properties, such as large thermal conductivity, wide transparency window, and strong optical nonlinearities, it is generally a difficult material for microfabrication. Here, it is shown that directly bonded silicon-on-silicon carbide can be a high-performing hybrid photonics platform that does not require the need to form SiC membranes or directly pattern in SiC. The optimized bonding method yields defect-free, uniform films with minimal oxide at the silicon–silicon–carbide interface. Ring resonators are patterned into the silicon layer with standard, complimentary metal–oxide–semiconductor (CMOS) compatible (Si) fabrication and measure room-temperature, near-infrared quality factors exceeding 10 5 . The corresponding propagation loss is 5.7 dB cm -1 . The process offers a wafer-scalable pathway to the integration of SiC photonics into CMOS devices.
36 MATERIALS SCIENCE↗
Inverse-Designed Photonics for Semiconductor Foundries
Silicon photonics is becoming a leading technology in photonics, displacing traditional fiber optic transceivers and enabling new applications. Further improving the density and performance of silicon photonics, however, has been challenging due to the large size and limited performance of traditional semianalytically designed components. Automated optimization of photonic devices using inverse design is a promising path forward but has, until now, faced difficulties in producing designs that can be fabricated reliably at scale. In this paper we experimentally demonstrate four inverse-designed devices made successfully in a commercial silicon photonics foundry: a spatial mode multiplexer, wavelength demultiplexer, 50–50 directional coupler, and 3-way power splitter. These devices are efficient, robust to fabrication variability, and compact, with footprints only a few micrometers across. They pave the way forward for the widespread practical use of inverse design.
36 MATERIALS SCIENCE↗
COLLABORATIVE DEVELOPMENT PROJECTS - PHOTONIC MEMORY CONTROLLER MODULE (P-MCM)
As computational density for high-performance computing and big-data services continues to scale, performance scalability of next generation computing systems is becoming increasingly constrained by limitations in memory access, power dissipation and chip packaging. The processor-memory communication bottleneck, a major challenge in current multicore processors due to limited pin-out and power budget, presents a detrimental scaling barrier to data-intensive computing. A consortium team of small businesses and leading researchers that includes experts from photonics processor-memory architecture, III/V photonic laser design/fabrication, silicon photonics design/fabrication, photonics packaging and assembly, and FPGA-based high-performance memory controller IP development – to collaboratively develop a commercialization path for a Photonic Memory Controller Module (P-MCM).
97 MATHEMATICS AND COMPUTING↗
Phase I Final Technical Report on Energy-Efficient Reconfigurable Universal Accelerator Interconnect
It is well known that application specific computing systems, optimally designed and configured for a given workload, offer much higher energy-efficiency and throughput than general purpose systems. In modern computing systems, heterogeneous computing systems have emerged that exploit the energy and performance benefits of combining various different domain-specific processor architectures. Application domains such as high-performance computing and machine learning now process terabyte-sized data sets, requiring enormous processing and memory resources. These applications have very high-power consumption due to bottlenecks in the electrical interconnection between processing units. This project aims to reduce both communication energy and latency by integrating universally available accelerators with silicon photonics. It also aims to increase system throughput by exploiting emerging technologies in silicon photonic reconfigurable interconnects; this will allow the system to balance itself in real time to accommodate changes in workloads and data flows.
2.5D/3D integration↗
Side-lobe reduction by cascading Bragg grating filters on a Si-photonic chip
Bragg-grating based cavities and coupler designs present opportunities for flexible allocation of bandwidth and spectrum in silicon photonic devices. Integrated silicon photonic devices are moving toward mainstream, mass adoption, leading to the need for compact Bragg grating based designs. In this work we present a design and experimental validation of a cascaded contra-directional Bragg-grating coupler with a measured main lobe to side-lobe contrast of 12.93 dB. This level of performance is achieved in a more compact size as compared to conventional apodized gratings, and a similar design philosophy can be used to improve side-lobe reduction in grating-based mirror design for on-chip lasers and other cavity-based designs as well.
42 ENGINEERING↗
Ultra‐Low‐Loss Silicon Nitride Photonics Based on Deposited Films Compatible with Foundries
Abstract The fabrication processes of silicon nitride (Si 3 N 4 ) photonic devices used in foundries require low temperature deposition, which typically leads to high propagation losses. Here, it is shown that propagation loss as low as 0.42 dB cm −1 can be achieved using foundry compatible processes by solely reducing waveguide surface roughness. By postprocessing the fabricated devices using rapid thermal anneal (RTA) and furnace anneal, propagation losses down to 0.28 dB cm −1 and 0.06 dB cm −1 , respectively, are achieved. These low losses are comparable to the conventional devices using high temperature, high‐stress LPCVD films. The dispersion of the devices is also tuned, and it is proved that these devices can be used for linear and nonlinear applications. Low threshold parametric oscillation, broadband frequency combs, and narrow‐linewidth laser are demonstrated. This work demonstrates the feasibility of scalable photonic systems based on foundries.
Ji, Xingchen↗
Characterization of Silicon Photomultiplier Photon Detection Efficiency at Liquid Nitrogen Temperature
The detection of individual photons at cryogenic temperatures is of interest to many experiments searching for physics beyond the Standard Model. Silicon photomultipliers (SiPMs) are often deployed in liquid argon or liquid xenon to detect scintillation light either directly or after it has been wavelength-shifted. Maximizing the photon detection efficiency (PDE) of the SiPMs used in these experiments optimizes the sensitivity to new physics; however, the PDEs of commercial SiPMs, although well known at room temperature, are not well characterized at the cryogenic temperatures at which many experiments operate them. Here we present results from an experimental setup that measures the photon detection efficiencies of silicon photomultipliers at liquid nitrogen temperature, 77 K. Results from a KETEK PM3325-WB-D0 and a Hamamatsu S13360-3050CS silicon photomultiplier — of R&D interest to the LEGEND experiment — exhibit a decrease in photon detection efficiency greater than 20% at liquid nitrogen temperature relative to room temperature for 562 nm light.
Cryogenic detectors↗
III/V silicon hybrid laser based on a resonant Bragg structure
We demonstrate a laser tunable in intensity with gigahertz tuning speed based on a III/V reflective semiconductor optical amplifier (RSOA) coupled to a silicon photonic chip. The silicon chip contains a Bragg-based Fabry–Perot resonator to form a passive bandpass filter within its stopband to enable single-mode operation of the laser. We observe a side mode suppression ratio of 43 dB, linewidth of 790 kHz, and an optical output power of 1.65 mW around 1530 nm. We also investigate using a micro-ball lens as an alternative coupling method between the RSOA and the silicon chip.
Davis, Jordan A. (ORCID:0000000343483295)↗
A Dynamically-Reconfigurable Burst-Mode Link Using a Nanosecond Photonic Switch
Fast optical circuit switching has great potential to solve scaling issues with traditional packet-switch based networks and improve bandwidth and power efficiency in datacenter and high-performance computing applications. One difficultly in utilizing a fast optical switch is that the optical signal must be rapidly reacquired after each switching event so as to not significantly impact the overall throughput of the system. In this work we present a system-level integration of a nanosecond-scale $2 \times 2$ silicon photonic switch with a 25-Gbps burst-mode receiver that can lock in 31 ns. A novel FPGA-based control plane was used to generate test data, control the silicon photonic switch and burst-mode receiver, and measure bit errors at 12.5 and 20 Gbps. Error-free links (BER $< 10^{-12}$ ) with system-level reconfiguration times below 60 ns (at 20 Gbps) and 90 ns (at 12.5 Gbps) including bit- and frame-synchronization are demonstrated.
32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
Integrated silicon optical amplifier with reduced residual pump
An optical amplifier device employing a Mach-Zehnder Interferometer (MZI) that reduces the amount of residual pump power in the optical output of the amplifier is disclosed. The MZI amplifier employs two geometrically linear optical amplifier arms or two multi-spatial-mode racetrack optical amplifiers to amplify a signal with a pumping beam, with the signal output port having extremely low levels of residual pump power. The MZI optical amplifier is a silicon photonic integrated circuit, with all optical amplifiers, couplers, phase shifters, and optical attenuators formed of silicon photonic integrated circuit elements. The MZI optical amplifier may include one, two, or three MZI stages, and multiple MZI optical amplifiers may be used in parallel or sequentially to achieve higher overall signal gain or power. The MZI optical amplifier may employ Brillouin-scattering-based amplifiers, Raman-based integrated waveguide optical amplifiers, or Erbium-doped integrated waveguide optical amplifiers.
Lentine, Anthony L.↗
Potential of Glassy Carbon and Silicon Carbide Photonic Structures as Electromagnetic Radiation Shields for Atmospheric Re-entry
During high-velocity atmospheric entries, space vehicles can be exposed to strong electromagnetic radiation from ionized gas in the shock layer. Glassy carbon (GC) and silicon carbide (SiC) are candidate thermal protection materials due to their high melting point and also their good thermal and mechanical properties. Based on data from shock tube experiments, a significant fraction of radiation at hypersonic entry conditions is in the frequency range from 215 to 415 THz. We propose and analyze SiC and GC photonic structures to increase the reflection of radiation in that range. For this purpose, we performed numerical optimizations of various structures using an evolutionary strategy. Among the considered structures are layered, porous, woodpile, inverse opal and guided-mode resonance structures. In order to estimate the impact of fabrication inaccuracies, the sensitivity of the reflectivity to structural imperfections is analyzed. We estimate that the reflectivity of GC photonic structures is limited to 38% in the aforementioned range, due to material absorption. However, GC material can be effective for photonic reflection of individual, strong spectral line. SiC on the other hand can be used to design a good reflector for the entire frequency range.
Komarevskiy,Nikolay↗
Room-temperature single-photon emitters in silicon nitride
Single-photon emitters are essential in enabling several emerging applications in quantum information technology, quantum sensing, and quantum communication. Scalable photonic platforms capable of hosting intrinsic or embedded sources of single-photon emission are of particular interest for the realization of integrated quantum photonic circuits. Here, we report on the observation of room-temperature single-photon emitters in silicon nitride (SiN) films grown on silicon dioxide substrates. Photophysical analysis reveals bright (>10 5 counts/s), stable, linearly polarized, and pure quantum emitters in SiN films with a second-order autocorrelation function value at zero time delay g (2) (0) below 0.2 at room temperature. We suggest that the emission originates from a specific defect center in SiN because of the narrow wavelength distribution of the observed luminescence peak. Single-photon emitters in SiN have the potential to enable direct, scalable, and low-loss integration of quantum light sources with a well-established photonic on-chip platform.
42 ENGINEERING↗
New trends in photonic switching and optical networking architectures for data centers and computing systems [Invited]
The rapid increases in data traffic coupled with user preferences are driving the data center and computing system service providers to offer energy-efficient, intelligent, flexible, cost-effective, high-capacity, and low-latency data services without added complexity to the users. Disaggregated heterogeneous reconfigurable computing systems realized by photonic switching and interconnects can enhance throughput and energy efficiency for artificial intelligence/machine learning (AI/ML) workloads, especially when aided by the AI/ML-enhanced control plane. Photonic switching and new optical networking architectures are expected to solve many of these challenging problems. This paper discusses new trends in photonic switching and optical network architectures for future data centers and computing systems summarized as follows: (1) flat reconfigurable disaggregated computing enabled by high-radix photonic switching and interconnects in data centers; (2) chiplet-based computing architectures empowered by embedded photonics toward heterogeneous reconfigurable computing; (3) nanosecond-scale photonic switching in data centers and computing systems; (4) AI/ML in self-driving, application-aware, and situation-aware data centers; (5) the emergence of flexible networking for cloud computing, edge computing, and split computing, as well as flexible networking for 5G/6G RF-optical networks; and (6) the deployment of embedded co-designed silicon photonics being considered for future data centers.
Yoo, S. J. Ben (ORCID:0000000274201871)↗
Quantum Nature of Dielectric Laser Accelerators
Dielectric laser accelerators (DLAs) hold great promise for producing economic and compact on-chip radiation sources. On-chip DLAs benefit from fabrication capabilities of the silicon industry and from breakthroughs in silicon-photonic nanostructures to enhance the interaction between particles and laser fields. Seemingly unrelated recent advances in the quantum interactions of electrons and light have raised interest in the underlying classical-quantum correspondence principle at the foundations of electron acceleration. Here, we present the observation of the underlying quantum nature of DLAs: observing quantized peaks in the electron-energy spectra. Our findings demonstrate quasi-phase-matching between an electron wave function and a light wave, which also demonstrates the role of the quantum wave function in the inverse Smith-Purcell effect. We harness the capabilities of an ultrafast transmission electron microscope (UTEM) to maintain a long electron-light interaction length extending over hundreds of periods of the laser pulse, mediated by a silicon-photonic nanograting DLA. The UTEM is shown as a new platform for characterization of future DLA concepts. The results raise fundamental questions regarding the role of quantum mechanics in DLA design, and more generally about the prospects of manipulating particles’ quantum wave functions in accelerator physics.
43 PARTICLE ACCELERATORS↗