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DOE OSTI · 1982943

Room-temperature single-photon emitters in silicon nitride

Senichev, Alexander·Martin, Zachariah O.·Peana, Samuel·Sychev, Demid·Xu, Xiaohui·Lagutchev, Alexei S.·Boltasseva, Alexandra·Shalaev, Vladimir M.
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Abstract

Single-photon emitters are essential in enabling several emerging applications in quantum information technology, quantum sensing, and quantum communication. Scalable photonic platforms capable of hosting intrinsic or embedded sources of single-photon emission are of particular interest for the realization of integrated quantum photonic circuits. Here, we report on the observation of room-temperature single-photon emitters in silicon nitride (SiN) films grown on silicon dioxide substrates. Photophysical analysis reveals bright (>10 5 counts/s), stable, linearly polarized, and pure quantum emitters in SiN films with a second-order autocorrelation function value at zero time delay g (2) (0) below 0.2 at room temperature. We suggest that the emission originates from a specific defect center in SiN because of the narrow wavelength distribution of the observed luminescence peak. Single-photon emitters in SiN have the potential to enable direct, scalable, and low-loss integration of quantum light sources with a well-established photonic on-chip platform.

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Senichev, Alexander, Martin, Zachariah O., Peana, Samuel, Sychev, Demid, Xu, Xiaohui, Lagutchev, Alexei S., Boltasseva, Alexandra, Shalaev, Vladimir M.. 2021-12-10. Room-temperature single-photon emitters in silicon nitride. https://doi.org/10.1126/sciadv.abj0627

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