Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “SPUTTERING”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Commissioning of a modulated pulse-power magnetron sputtering system for depositing niobium thin films

A modulated pulse-power magnetron sputtering system (MPPMS) was commissioned and used to deposit niobium on copper. MPPMS utilizes a modulated pulse train with high peak-to-average energy ratios, thereby increasing the energy density leading to the production of the energetic ions. The MPPMS modulator was designed and constructed based on large voltage/current IGBT modules, which can be externally modulated, produce bi-polar waveforms, and are readily available. A high voltage power supply provides moderate current to the IGBT module to create the precise pulse structure. The MPPMS system was used to deposit ~1 mm thick, niobium film on a copper substrate held at ~77 K to minimize Nb atom surface diffusion and maximize intrinsic film energy. Finally, the Nb film had an average grain size of ~8 nm.

42 ENGINEERING↗
DOE OSTI2026

Combinatorial deposition of Au–Bi alloys via high-rate magnetron sputtering

Gold–bismuth (Au–Bi) alloy films are promising candidate materials for inertial confinement fusion (ICF) hohlraums due to their high laser-to-x-ray conversion efficiency, particularly compared with Au, Ta–Au, and Bi hohlraums. However, the fabrication of uniform and dense Au–Bi alloy films remains a challenge. Here, we use a combination of Monte-Carlo modeling and experiments to demonstrate that the microstructure and properties of Au–Bi alloy films can be greatly improved when direct-current magnetron sputtering with high deposition rates of ⩾5 μm h -1 is used. Resultant films are ~90% of their maximum theoretical densities and have low O content of <1 at.%. Films with Bi content above 40 at. % exhibit high electrical resistivity >100μΩ cm, making them suitable for both magnetized and non-magnetized ICF schemes.

Materials science↗
DOE OSTI2025

Interface-sensitive microwave loss in superconducting tantalum films sputtered on c-plane sapphire

Quantum coherence in superconducting circuits has increased steadily over the last decades because of a growing understanding of the various loss mechanisms. Recently, tantalum (Ta) emerged as a promising material to address microscopic sources of loss found on niobium (Nb) or aluminum (Al) surfaces. However, the effects of film and interface microstructure on low-temperature microwave loss are still not well understood. Here, in this study, we present a systematic study of the structural and electrical properties of Ta and Nb films sputtered on c-plane sapphire at varying growth temperatures. As growth temperature was increased, our results show that the onset of epitaxial growth of α -phase Ta correlates with lower Ta surface roughness, higher critical temperature, and higher residual resistivity ratio, but surprisingly also correlates with a significant increase in loss at microwave frequency. Notably, this high level of loss is not observed in Nb films prepared in the same way and having very similar structure. By experimentally controlling the surface on which the Ta film is nucleated, we determine that the source of loss was only present in samples having an epitaxial Ta/sapphire interface and show that it was apparently mitigated by either growing a thin, epitaxial Nb interlayer between the Ta film and the substrate or by intentionally treating, and effectively damaging, the sapphire surface with an in situ argon plasma before Ta growth. In addition to elucidating this interfacial microwave loss, this work provides adequate process details to aid reproducible growth of low-loss Ta films across fabrication facilities.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Sputter deposition of Ta 1 W 1 Au 1 Bi 7 films for next generation hohlraums

Hohlraum simulation predicts a higher x-ray drive from Ta 1 W 1 Au 1 Bi 7 compared with our current Au hohlraum. Here, we study the effect of deposition process parameters including deposition rate, working pressure, target-to-substrate distance, substrate bias, and substrate temperature on the microstructure of Ta1W1Au1Bi7 films deposited by direct current magnetron sputtering onto planar substrates. We found that the substrate temperature has a pronounced effect on the film microstructure. This is attributed to the Bi low melting point (271°C) causing its adatom mobility to be strongly dependent on the substrate temperature. Additionally, we observed phase separation for films deposited with a high substrate bias. These results have important implications for the development of a robust Ta 1 W 1 Au 1 Bi 7 hohlraum fabrication process.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Controlled Growth of Ta Oxide With Reactive Sputtering for Overlap Josephson Junction Application

Josephson junctions $\($JJs$\)$ are indispensable elements for superconducting quantum electronics. There is a growing need to develop processes for high quality JJs. Here we explore the growth of Ta oxide as a dielectric barrier for Metal-Oxide-Metal overlap JJ implementations. We study films of Ta oxides prepared with reactive magnetron sputtering. TaOx is grown on silicon and Ta films with varying RF power and oxygen concentrations. Tuning these parameters allows us to control the rate of deposition as well as composition of polycrystalline Ta oxides needed to meet our dielectric requirements for Josephson Junctions.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2026

Optimization of boron carbide density using direct current sintering for use as sputtering sources at the National Ignition Facility

Several experimental trials were conducted to determine optimal sintering parameters and compositions for purchased boron carbide powder using spark plasma sintering/direct current sintering. Sputtering targets used to create ablators for the National Ignition Facility have been unable to survive post processing procedures suggesting that in-house fabrication may yield better results due to extended control.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Heterogeneous Morphologies and Hardness of Co-Sputtered Thin Films of Concentrated Cu-Mo-W Alloys

Heterogeneous microstructures in Cu-Mo-W alloy thin films formed by magnetron co-sputtering immiscible elements with concentrated compositions are characterized using scanning transmission electron microscopy (STEM) and nanoindentation. In this work, we modified the phase separated structure of a Cu-Mo immiscible system by adding W, which impedes surface diffusion during film growth. The heterogeneous microstructures in the Cu-Mo-W ternary system exhibited bicontinuous matrices and agglomerates composed of Mo(W)-rich phase. This is unique, as these are the slower-diffusing species, contrasting past reports of binary Cu-Mo thin films that exhibited Cu-rich agglomerates. The bicontinuous matrices comprised of Cu-rich and Mo(W)-rich phases exhibited bilayer thicknesses of less than 5 nm. The hardness of these thin films measured using nanoindentation is reported and compared to similar multilayers and nanocomposites in binary systems.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Thin film combinatorial sputtering of TaTiHfZr refractory compositionally complex alloys for rapid materials discovery

Many applications from advanced nuclear reactors to aerospace and automotive industries require materials to operate in extreme environments. In search of new materials that can operate in these extremes, the present work explores this space whereby: (1) guided by atomistic and thermodynamic calculations we utilize thin film combinatorial synthesis to rapidly explore mechanical and thermal properties in a broad range of refractory compositionally complex alloys, and (2) observe transformation induced plasticity via oscillations in the thin film nanoindentation load depth curves that are attributed to, (3) a stress-induced HCP-to-BCC phase transformation in the resulting nanogranular microstructure, which to our knowledge has not been observed before in this alloy system; and finally (4) scale to bulk materials to compare the thin film results.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Ferroelectric Al 1− x B x N sputtered thin films on n -type Si bottom electrodes

Ferroelectric Al 1−x B x N thin films are grown on highly doped and plasma treated (100) n-type Si. We demonstrate ferroelectricity for x = < 0.01, 0.02, 0.06, 0.08, 0.13, and 0.17 where the n-type Si is both the substrate and bottom electrode. Polarization hysteresis reveals remanent polarization values between 130 and 140 μC/cm 2 and coercive field values as low as 4 MV/cm at 1 Hz with low leakage. The highest resistivity and most saturating hysteresis occurs with B contents between x = 0.06 and 0.13. We also demonstrate the impact of substrate plasma treatment time on Al 1−x B x N crystallinity and switching. Cross-sectional transmission electron microscopy and electron energy loss spectra reveal an amorphous 3.5 nm SiN x layer at the Al 1−x B x N interface post-plasma treatment and deposition. The first ~ 5 nm of Al 1−x B x N is crystallographically defective. Using the n-type Si substrate, we demonstrate Al 1−x B x N thickness scaling to 25 nm via low-frequency hysteresis and CV. Serving as the bottom electrode and substrate, the n-type Si enables a streamlined growth process for Al 1−x B x N for a wide range of Al 1−x B x N compositions and layer thicknesses.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Optical constants of magnetron sputtered aluminum in the range 17–1300 eV with improved accuracy and ultrahigh resolution in the L absorption edge region

This work determines a new set of EUV/x-ray optical constants for aluminum (Al), one of the most important materials in science and technology. Absolute photoabsorption (transmittance) measurements in the 17–1300 eV spectral range were performed on freestanding Al films protected by carbon (C) layers, to prevent oxidation. The dispersive portion of the refractive index was obtained via the Kramers–Kronig transformation. Our data provide significant improvements in accuracy compared to previously tabulated values and reveal fine structure in the Al L 1 and L 2,3 regions, with photon energy step sizes as small as 0.02 eV. The implications of this work in the successful realization of EUV/x-ray instruments and in the validation of atomic and molecular physics models are also discussed.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2025

Interfacial oxide and other species in trimethylaluminum-pretreated atomic layer deposition-Al 2 O 3 /GaN characterized by sputter-assisted ToF-SIMS

Deposition techniques, like atomic layer deposition (ALD), are used to form high-quality dielectrics for GaN-based metal–oxide–semiconductor (MOS) gate structures due to the lack of a reliable thermal oxide in GaN. Moreover, interfacial GaO x from pre-existing native oxides is thought to adversely impact channel carrier dynamics and induce undesired threshold voltage shifts in GaN-based MOS gate structures. Exposure of the GaN surface to the trimethylaluminum (TMA) precursor prior to standard alumina ALD decreases the native oxide layer on GaN, but the extent of chemical modification has not been well studied in the context of interface composition in a MOS gate structure. Herein, we compare annealed 55 nm Al 2 O 3 dielectric films on GaN grown using either a water-first ALD process or a process including sequential pulses of TMA immediately before the initiation of Al 2 O 3 ALD. Time-of-Flight Secondary Ion Mass Spectrometry measures differences in the interfacial GaO x content between each ALD film. Here, it also detects surface contaminant species like Si, F, S, and C. Furthermore, we report the formation of an AlN species at the Al 2 O 3 /GaN interface, which is more prominent for the film grown using the TMA pre-pulse step. In general, this work demonstrates that the TMA pre-pulse step is an effective strategy for cleaning substrate surfaces prior to ALD.

Atomic layer deposition↗