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At least 55 records · Page 3

Neural network based feed-forward high density associative memory

A novel thin film approach to neural-network-based high-density associative memory is described. The information is stored locally in a memory matrix of passive, nonvolatile, binary connection elements with a potential to achieve a storage density of 10 to the 9th bits/sq cm. Microswitches based on memory switching in thin film hydrogenated amorphous silicon, and alternatively in manganese oxide, have been used as programmable read-only memory elements. Low-energy switching has been ascertained in both these materials. Fabrication and testing of memory matrix is described. High-speed associative recall approaching 10 to the 7th bits/sec and high storage capacity in such a connection matrix memory system is also described.

Daud, T.↗

Automatic multi-banking of memory for microprocessors

A microprocessor system is provided with added memories to expand its address spaces beyond its address word length capacity by using indirect addressing instructions of a type having a detectable operations code and dedicating designated address spaces of memory to each of the added memories, one space to a memory. By decoding each operations code of instructions read from main memory into a decoder to identify indirect addressing instructions of the specified type, and then decoding the address that follows in a decoder to determine which added memory is associated therewith, the associated added memory is selectively enabled through a unit while the main memory is disabled to permit the instruction to be executed on the location to which the effective address of the indirect address instruction points, either before the indirect address is read from main memory or afterwards, depending on how the system is arranged by a switch.

Wiker, G. A.↗

Fast Initialization of Bubble-Memory Systems

Improved scheme several orders of magnitude faster than normal initialization scheme. State-of-the-art commercial bubble-memory device used. Hardware interface designed connects controlling microprocessor to bubblememory circuitry. System software written to exercise various functions of bubble-memory system in comparison made between normal and fast techniques. Future implementations of approach utilize E2PROM (electrically-erasable programable read-only memory) to provide greater system flexibility. Fastinitialization technique applicable to all bubble-memory devices.

Looney, K. T.↗

Binary synaptic connections based on memory switching in a-Si:H for artificial neural networks

A scheme for nonvolatile associative electronic memory storage with high information storage density is proposed which is based on neural network models and which uses a matrix of two-terminal passive interconnections (synapses). It is noted that the massive parallelism in the architecture would require the ON state of a synaptic connection to be unusually weak (highly resistive). Memory switching using a-Si:H along with ballast resistors patterned from amorphous Ge-metal alloys is investigated for a binary programmable read only memory matrix. The fabrication of a 1600 synapse test array of uniform connection strengths and a-Si:H switching elements is discussed.

Thakoor, A. P.↗

CCD Memory

CCD memory device yields over 6.4 x 10 to the eighth power levels of information on single chip. Charge-coupled device (CCD) demonstrated to operate as either read-only-memory (ROM) or photon-programmable memory with capacity of 640,000 bits, with each bit capable of being weighted to more than 1,000 discrete analog levels. Larger memory capacities now possible using proposed approach in conjunction with CCD's now being fabricated, which yield over 4 x 10 to the ninth power discrete levels of information on single chip.

Janesick, James R.↗

Photorefractive materials for optical storage and display

Real-time data storage and processing using optical techniques have been considered in recent years. Of particular interest are photosensitive electro-optic crystals which permit volume storage in the form of phase holograms, by means of a charge transfer process. A survey of the state of the art of such holographic memories is presented. The physical mechanism responsible for the formation of phase holograms in such crystals is discussed. Attention is focused on various aspects of materials characterization, development and utilization. Experimental reversible holographic read-write memory systems with fast random access and high storage capacity employing this new class of photosensitive materials have already been demonstrated.

Shah, R. R.↗

Programmable Analog Memory Resistors For Electronic Neural Networks

Electrical resistance of new solid-state device altered repeatedly by suitable control signals, yet remains at steady value when control signal removed. Resistance set at low value ("on" state), high value ("off" state), or at any convenient intermediate value and left there until new value desired. Circuits of this type particularly useful in nonvolatile, associative electronic memories based on models of neural networks. Such programmable analog memory resistors ideally suited as synaptic interconnects in "self-learning" neural nets. Operation of device depends on electrochromic property of WO3, which when pure is insulator. Potential uses include nonvolatile, erasable, electronically programmable read-only memories.

Ramesham, Rajeshuni↗

Stacked-Gate FET's For Analog Memory Elements

Three-terminal, double-stacked-gate field-effect transistor (FET), developed as analog memory element. Particularly suited for use as synapse with variable connection strength in electronic neural network. Provides programmable, nonvolatile resistive connection, somewhat in manner of porous-gate FET described in "Porous-Floating-Gate Field-Effect Transistor" (NPO-17532). Resembles commercial erasable programmable read-only memory (EPROM) device, except for thickness of layers of silicon dioxide electrically isolating gates. Either p-channel or n-channel device.

Thakoor, Anilkumar P.↗

Memory interface simulator: A computer design aid

Results are presented of a study conducted with a digital simulation model being used in the design of the Automatically Reconfigurable Modular Multiprocessor System (ARMMS), a candidate computer system for future manned and unmanned space missions. The model simulates the activity involved as instructions are fetched from random access memory for execution in one of the system central processing units. A series of model runs measured instruction execution time under various assumptions pertaining to the CPU's and the interface between the CPU's and RAM. Design tradeoffs are presented in the following areas: Bus widths, CPU microprogram read only memory cycle time, multiple instruction fetch, and instruction mix.

Taylor, D. S.↗

Encrypting Digital Camera with Automatic Encryption Key Deletion

A digital video camera includes an image sensor capable of producing a frame of video data representing an image viewed by the sensor, an image memory for storing video data such as previously recorded frame data in a video frame location of the image memory, a read circuit for fetching the previously recorded frame data, an encryption circuit having an encryption key input connected to receive the previously recorded frame data from the read circuit as an encryption key, an un-encrypted data input connected to receive the frame of video data from the image sensor and an encrypted data output port, and a write circuit for writing a frame of encrypted video data received from the encrypted data output port of the encryption circuit to the memory and overwriting the video frame location storing the previously recorded frame data.

Oakley, Ernest C.↗

Disturb testing in flash memories

Non-volatile memory technology as defined by NAND architecture flash memory continues to lead the process scaling and device shrinking efforts of the entire integrated circuit industry. 45- nm technology nodes are now producing commercial 32Gb devices. These latest 32Gb devices are pioneering new charge trapping memory cell technologies using metal gates and high-k dielectric materials. These cells are called TANOS and consist of tantalum-nitride, aluminum oxide (high k material), nitride, oxide, and silicon. Such high-density memories continue to revolutionize commercial electronics in terms of new high-speed data architectures and significant reductions in overall power and weight consumption. In stark contrast, nearly all science-based interplanetary and earth-orbiting NASA spacecraft are still designing in and around mid-1980s-level non-volatile technology with 1Mb Electrically Erasable Read-Only Memory (EEPROM) devices. NASA has typically shunned the use of modern flash devices because of radiation and reliability concerns due to the commercial-offthe– shelf (COTS) nature of the NAND flash technology. Given the significant potential increases in overall system capability these modern flash devices could bring to NASA missions, it is important to continue to investigate these devices. This report will investigate certain portions of the reliability performance of NAND flash devices, specifically the disturb properties. Understanding the possible limitations such new non-volatile memory technology presents to NASA is the goal of this report.

Freie, Michael↗

Optical memory development. Volume 1: prototype memory system

The design, development, and implementation of a prototype, partially populated, million bit read-write holographic memory system using state-of-the-art components are described. The system employs an argon ion laser, acoustooptic beam deflectors, a holographic beam splitter (hololens), a nematic liquid crystal page composer, a photoconductor-thermoplastic erasable storage medium, a silicon P-I-N photodiode array, with lenses and electronics of both conventional and custom design. Operation of the prototype memory system was successfully demonstrated. Careful attention is given to the analysis from which the design criteria were developed. Specifications for the major components are listed, along with the details of their construction and performance. The primary conclusion resulting from this program is that the basic principles of read-write holographic memory system are well understood and are reducible to practice.

Cosentino, L. S.↗

Bubble memory module for spacecraft application

Bubble domain technology offers an all-solid-state alternative for data storage in onboard data systems. A versatile modular bubble memory concept was developed. The key module is the bubble memory module which contains all of the storage devices and circuitry for accessing these devices. This report documents the bubble memory module design and preliminary hardware designs aimed at memory module functional demonstration with available commercial bubble devices. The system architecture provides simultaneous operation of bubble devices to attain high data rates. Banks of bubble devices are accessed by a given bubble controller to minimize controller parts. A power strobing technique is discussed which could minimize the average system power dissipation. A fast initialization method using EEPROM (electrically erasable, programmable read-only memory) devices promotes fast access. Noise and crosstalk problems and implementations to minimize these are discussed. Flight memory systems which incorporate the concepts and techniques of this work could now be developed for applications.

Hayes, P. J.↗

FPGA Flash Memory High Speed Data Acquisition

The purpose of this research is to design and implement a VHDL ONFI Controller module for a Modular Instrumentation System. The goal of the Modular Instrumentation System will be to have a low power device that will store data and send the data at a low speed to a processor. The benefit of such a system will give an advantage over other purchased binary IP due to the capability of allowing NASA to re-use and modify the memory controller module. To accomplish the performance criteria of a low power system, an in house auxiliary board (Flash/ADC board), FPGA development kit, debug board, and modular instrumentation board will be jointly used for the data acquisition. The Flash/ADC board contains four, 1 MSPS, input channel signals and an Open NAND Flash memory module with an analog to digital converter. The ADC, data bits, and control line signals from the board are sent to an Microsemi/Actel FPGA development kit for VHDL programming of the flash memory WRITE, READ, READ STATUS, ERASE, and RESET operation waveforms using Libero software. The debug board will be used for verification of the analog input signal and be able to communicate via serial interface with the module instrumentation. The scope of the new controller module was to find and develop an ONFI controller with the debug board layout designed and completed for manufacture. Successful flash memory operation waveform test routines were completed, simulated, and tested to work on the FPGA board. Through connection of the Flash/ADC board with the FPGA, it was found that the device specifications were not being meet with Vdd reaching half of its voltage. Further testing showed that it was the manufactured Flash/ADC board that contained a misalignment with the ONFI memory module traces. The errors proved to be too great to fix in the time limit set for the project.

Gonzalez, April↗

Programable Driver for Voltage-Controlled Oscillators

Electronically programable read-only memory (EPROM) and digital-to-analog converter provide customized time-varying voltage for frequency modulation. Voltage used to modulate IMPATT oscillator that serves as microwave pump for solid-state maser in low-noise amplifier. EPROM simple to tailor voltage waveform to suit characteristics of given maser. Digital information for waveform programed into EPROM chip; digital-to-analog converter reads information and produces corresponding analog wave. Principle readily adapted to other applications.

Fowler, L. E.↗

Feedforward, high density, programmable read only neural network based memory system

Neural network-inspired, nonvolatile, programmable associative memory using thin-film technology is demonstrated. The details of the architecture, which uses programmable resistive connection matrices in synaptic arrays and current summing and thresholding amplifiers as neurons, are described. Several synapse configurations for a high-density array of a binary connection matrix are also described. Test circuits are evaluated for operational feasibility and to demonstrate the speed of the read operation. The results are discussed to highlight the potential for a read data rate exceeding 10 megabits/sec.

Daud, Taher↗

Rapid method for interconversion of binary and decimal numbers

Decoding tree consisting of 40-bit semiconductor read-only memories interconverts binary and decimal numbers 50 to 100 times faster than current methods. Decimal-to-binary conversion algorithm is based on a divided-by-2 iterative equation, binary-to-decimal conversion algorithm utilizes multiplied-by-2 iterative equation.

Lim, R. S.↗