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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Preliminary benchmarks and analysis of boundary conditions in a trenched microstructured silicon radiation detector

Microstructured neutron detectors have the benefit of enhanced neutron detection efficiency as compared to planar devices, achieved by etching 6 LiF-filled trenches on the top surface of a silicon PIN diode. This sensor geometry results in a complex electric field distribution and depletion characteristics within the diode under reverse bias. For the first time on record, the effects of a fixed oxide charge on the microstructured device depletion characteristics and mobile carrier transport is investigated. Prototype detectors were fabricated with non-conformal surface doping. Capacitance voltage and current voltage measurements were performed for these prototypes and compared with COMSOL Multiphysics simulations. A spectral response from an 241Am alpha particle source was acquired and analyzed. It was found that monoenergetic alpha particles produce three prominent peaks in the pulse height spectrum output by the device. The peaks were confirmed by simulations to correlate with dead layers and incident trajectories into the microstructure. It was also found that significant differences in pulse rise time result, corresponding with events arriving in a low-field region in the fins and a high-field region in the bulk. Geant4 was utilized for radiation transport, interaction modeling, and benchmarking the spectral data. The results of this simulation work provide confidence in the ability to attain and benchmark electrical characteristics and spectral data for semiconductor radiation detectors employing complex microstructures.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2023

Generalized Theory and Realization of Continuously Loss-Programmable Bandpass Filtering Attenuators

With the increased demand for modern wireless systems in various applications, the need for adjustable radio frequency (RF) systems has dramatically increased. These modern systems rely on operating in the microwave frequency spectrum (1 GHz to 1 THz) without interference from other devices while also retaining the ability to detect very low and very high power signals simultaneously. There is also an ever-increasing demand for reducing the cost, size, weight, and power (C-SWaP) of these modern RF systems, driving the demand for more agile filters in the microwave frequency spectrum. In this paper, a generalized theory of bandpass filtering attenuators (filtenuators) is proposed. A filtenuator is a device that combines the frequency- selective characteristics of a filter and the loss-programmable characteristics of an attenuator into a single component. The loss- programmable aspect of the filtenuator is based on the tuning of a π-network of resistances, which are implemented using PIN diodes to control the individual resistance values electronically. A loss-programmable, third-order Chebyshev bandpass filtenuator is designed, fabricated, and measured to verify the generalized theory. The filtenuator is designed to operate at 1 GHz and have a tunable attenuation range of 2-10 dB. This proposed filtenuator demonstrates the feasibility of a tunable, low C-SWaP solution to increase RF system dynamic range and a design process that allows for future development of filtenuators.

42 ENGINEERING↗
DOE OSTI2023

PV Inverter Systems Enabled by Monolithically Integrated SiC based Four Quadrant Power Switch (4-QPS) [BiDFET]

The purpose of this project was to develop a new breed of Power Conversion Systems (PCS) for PV integration that is enabled by the newly developed 4-Quadrant Single Die SiC Power Semiconductor Switches (4-QPS) or also referred to as “Bidirectional FET (BIDFET)”. This work includes semiconductor die development, advanced packaging, converter design, development, and testing of 4-QPS enabled hardware prototypes at 1 kW (for single phase residential application) and 10 kW (for three phase commercial application). The BiDirectional Field-Effect Transistor (BiDFET) can enable circuit topologies requiring four-quadrant switches, that were earlier designed using discrete combinations of MOSFETs, IGBTs, GaN HEMTs, and PiN diodes. The monolithic nature of the BiDFET allows lower device count, smaller switch volume, lower inductance, and simpler packaging, and hence more reliable and commercially viable implementation in power electronics converters. The matrix converter topologies, now feasible using BiDFETs, can eliminate the bulky and unreliable dc link capacitors or inductors required for conventional voltage-source or current-source converters in ac–ac and ac–dc applications. The 1.2 kV BiDFET has the potential to disrupt all the applications utilizing 1.2 kV switches, including electric vehicle (EV) drivetrain, bidirectional EV chargers, industrial motor drives, solid-state transformers, datacenter power supplies, elevator drives, dc microgrids, energy storage grid integration, solid-state breakers, etc.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2026

Gallium Arsenide Semiconductor Opening Switches: Enabling Nanosecond High Powering Pulsed Systems

The goal of this work awas to investigate design manufacturing semiconductor opening switches (SOS) in both silicon and gallium arsenide (GaAs). Solid-state opening switches are critical components for pulsed power systems and applications in directed energy, dielectric wall accelerators, and novel semiconductor manufacturing techniques. Under this funding, we have developed silicon SOS designs that suppresses an unwanted prepulse, increases the peak output voltage by about 10 percent, and reduces the pulse rise time by ~ 4x compared with more conventional profiles. Through this effort we have improved device fabrication and bonding techniques. Additionally, work on this the GaAs opening switch has defined a unique application space that these devices are suited for. GaAs opening switches have short risetimes and pulse widths compared to silicon devices, however the short carrier lifetime of GaAs makes the circuit design more challenging than in silicon. For high PRF operation, the lifetime of the GaAs is an advantage compared to silicon. TCAD simulations of GaAs devices have been used to optimize a GaAs profile. Additionally, we have designed pulsers with sub 50ns reserve pump times and tested GaAs COTs PIN diodes in them.

42 ENGINEERING↗
DOE OSTI2023

Total kinetic energy release in the fast neutron induced fission of actinide nuclei

The total kinetic energy release and fission mass distributions for the fast neutron (En = 3–100 MeV) induced fission of 232 Th, 233 U, 235 U, 237 Np, 239 Pu, 240 Pu, and 242 Pu have been measured using the LANSCE facility. The neutron energies were deduced from time-of- flight measurements. The fission fragments were detected using Si PIN diode detectors, giving us the fragment energies. The actinide targets were made by vapor deposition leading to high-quality targets, that were thin and uniform with reduced impurities. Corrections were made to the data for pulse height defect and the fragment energy loss in the target and its backing. The TKE distributions were Gaussian in shape and their mean value as a function of incoming neutron energy could be fitted with second order polynomials. In the case of 233 U and 235 U, our measurements agree with prior work. Our measurements for 232 Th are unique. Our data agree with Viola scaling. The constant position of the heavy mass peak is interpreted as being due to the influence of the N = 88 and Z = 50 shells. The GEF model predictions agree with the data in general as do the CGMF model predictions.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
NASA NTRS1971

High-power microstrip RF switch

A microstrip-type single-pole double-throw (SPDT) switch whose RF and bias portions contain only a metallized alumina substrate and two PIN diodes has been developed. A technique developed to eliminate the dc blocking capacitors needed for biasing the diodes is described. These capacitors are extra components and could lower the reliability significantly. An SPDT switch fabricated on a 5.08 x 5.08 x 0.127-cm (2 x 2 x 0.050-in.) substrate has demonstrated an RF power-handling capability greater than 50 W at S-band. The insertion loss is less than 0.25 db and the input-to-off port isolation is greater than 36 db over a bandwidth larger than 30 MHz. The input voltage standing-wave ratio is lower than 1.07 over the same bandwidth. Theoretical development of the switch characteristics and experimental results, which are in good agreement with theory, are presented.

Choi, S. D.↗
NASA NTRS1972

High power microstrip RF switches.

Description of a microstrip-type single-pole double-throw switch, which uses only two PIN diodes, eliminates usual dc blocking capacitors, and has demonstrated an RF power handling capacity greater than 100 W CW at S-band. The insertion loss is less than 0.25 dB, and the input-to-off port isolation is greater than 36 dB over a bandwidth larger than 30 MHz.

Choi, S. D.↗
NASA NTRS1974

Development for application of parylene coatings

A practical method of applying a parylene (paraxylene) coating to hybrid microcircuit devices was developed for the prevention of circuit malfunctions existing prior to package sealing or formed upon exposure to the service environment. It was found that paralene and an associated primer (if used) had generally little or no adverse effect on the active and passive elements of typical hybrid microcircuits. Exceptions were related to high frequency circuitry, low resistivity thick film resistors, and highly sensitive PIN diodes. Advantages of the use of the coating included increased dielectric strength and increased interconnection bond strength. Coating service life in nitrogen or nitrogen with low levels of oxygen as a contaminant is shown to be in excess of 1000 hours at 150 C and can be projected to be in excess of 5000 hours at 125 C.

Oberin, F. W.↗
NASA NTRS1979

Z-axis control loop for cathode-ray tubes

Inexpensive PIN diode detector samples screen brightness between camera frames generating error signal for feedback control of intensity. System was tested by taking flat-field exposures at several density levels over 4 hour period. Results showed processed film density levels varied by less than + or - 10 percent usually centering around + or - 8 percent.

Ray, A. J., Jr.↗
NASA NTRS1983

Design considerations for high-power VHF radar transceivers: T/R switch design

The transceiver (TR) switch developed at NOAA's Aeronomy Laboratory for use in their 50 kW peak power, 50 MHz transmitter is described. The switch mounts inside the transmitter chassis and was designed to be compact while retaining the ability to handle well over 50 kW peak power at average power levels up to 2 kW. The TR switch is a conventional TR/ATR design with equivalent /4 transmission line sections constructed of lumped constant coils and transmitting capacitors in ''Tee' sections. Two TR sections are placed in series to achieve adequate receiver protection. The switch is set into the ''transmit' mode by forward biasing the 3 pin diodes to about 1.2 amperes each. The receive mode is achieved by back biasing the diodes to -15 volts. A directional coupler is also incorporated into the TR switch box to provide a convenient monitor point for forward and reflected transmitter power.

Ecklund, W. L.↗
NASA NTRS1983

The electronic switching spherical array antenna for the Earth Radiation Budget Spacecraft

The ESSA is a microprocessor-controlled antenna for low orbiting spacecraft for telemetry and command relay through the Tracking and Data Relay Satellite System (TDRSS). The array is a hemispherical shape covered with disk radiating elements. A group of radiating elements are continuously selected by the microprocessor controller to form a beam in the direction of a TDRS. A radial switching power divider uses PIN diodes to select the desired radiating elements. The antenna gain is a function of the size of the hemispherical dome. A 30-inch diameter dome is presently being built for the Earth Radiation Budget Spacecraft (ERBS). Gain of this antenna over a hemisphere is 14 dBi and polarization is lefthand circular. There are 145 radiating elements with 12 being used at one time to form a beam. The ESSA subsystem weights 74 pounds and power consumption is 20 watts. RF power handling capability is 30 watts. The S-Band radiating elements have a 10 percent bandwidth that allows simultaneous transmission and reception.

Kudrna, K.↗
NASA NTRS1984

Observations of shadow bands at the total solar eclipse of 16 February 1980

Photoelectric observations of short term light variations (shadow bands) at the 16 Feb. 1980 total solar eclipse have been made using a set of spatially separated PIN diodes. Light variations in a bandpass of 1-500 Hz were detected during the half-minutes preceding and following the total phase. Fourier analysis of the noise spectrum of the variations reveals a sharp drop-off for frequencies above 50 Hz and an overall spectrum quite similar to previously reported power spectra of stellar scintillation. This is consistent with an atmospheric origin for the shadow bands. Cross-correlations between the detector outputs are low, suggesting a short persistence time for the turbulent elements causing the patterns.

Marschall, L. A.↗
NASA NTRS1986

Development of the EXITE detector - A new imaging detector for 20 - 300 keV astronomy

The development and testing of a detector to be used in the Energetic X-ray Imaging Telescope Experiment (EXITE) are reported. It consists of a 34 cm diameter NaI(Tl) crystal coupled directly to a single large image intensifier tube with associated silicon PIN diode readout. The measured spatial and energy resolutions at 122 keV are 6mm (FWHM) and 9 percent (FWHM), respectively. This energy resolution is about 50 percent better than that of any previously flown hard X-ray experiment. These resolutions decrease with the square root of the energy of the incident X-ray, indicating that they are determined by the number of photons emitted in the NaI(Tl) scintillator light flash.

Garcia, M. R.↗
NASA NTRS1987

Fast autotuning of a hydrogen maser by cavity Q modulation

A new fast autotuner for the hydrogen maser was implemented. By modulating the cavity, a phase shift in the maser output signal is induced which is proportional to the cavity tuning error. The phase shift is detected and fed back to a varactor tuner to stabilize the cavity against long-term drifts. Also, a PIN-diode cavity modulator which gives no incidental frequency shift over a very wide range of operation was developed. Modulated at over 200 Hz, it allows variations in maser cavity frequency to be compensated with a loop gain greater than 1000. Compensation of incidental amplitude modulation of the output was demonstrated.

Dick, G. J.↗
NASA NTRS1988

An adaptive array antenna for mobile satellite communications

The adaptive array is linearly polarized and consists essentially of a driven lambda/4 monopole surrounded by an array of parasitic elements all mounted on a ground plane of finite size. The parasitic elements are all connected to ground via pin diodes. By applying suitable bias voltages, the desired parasitic elements can be activated and made highly reflective. The directivity and pointing of the antenna beam can be controlled in both the azimuth and elevation planes using high speed digital switching techniques. The antenna RF losses are neglible and the maximum gain is close to the theoretical value determined by the effective aperture size. The antenna is compact, has a low profile, is inexpensive to manufacture and can handle high transmitter power.

Milne, Robert↗
NASA NTRS1989

Monolithic III-V/Silicon Spatial Light Modulator

Current techniques for growth of device-quality GaAs on silicon substrates enables fabrication of silicon-based version of photodiode-coupled spatial light modulator. Monolithic photodiode-coupled light-modulator array constructed on silicon substrate by growing InAs/GaAs multiple-quantum-wells over silicon PIN diode layer. Intermediate GaAs buffer layer confines attice-misfit dislocations to vicinity of silicon. Use of silicon makes available wider range of auxiliary on-chip signal-processing circuitry for coding and decoding of data, addition or subtraction of brightness levels, spatial reformatting, and rescaling.

Maserjian, Joseph↗
NASA NTRS1991

Noise characteristics of passive components for phased array applications

The results of a comparative study on noise characteristics of basic power combining/dividing and phase shifting schemes are presented. The theoretical basics of thermal noise in a passive linear multiport are discussed. A new formalism is presented to describe the noise behavior of the passive circuits, and it is shown that the fundamental results are conveniently achieved using this description. The results of analyses concerning the noise behavior of basic power combining/dividing structures (the Wilkinson combiner, 90 deg hybrid coupler, hybrid ring coupler, and the Lange coupler) are presented. Three types of PIN-diode switch phase shifters are analyzed in terms of noise performance.

Sonmez, M. Kemal↗
NASA NTRS1992

Optical multiple access techniques for on-board routing

The purpose of this research contract was to design and analyze an optical multiple access system, based on Code Division Multiple Access (CDMA) techniques, for on board routing applications on a future communication satellite. The optical multiple access system was to effect the functions of a circuit switch under the control of an autonomous network controller and to serve eight (8) concurrent users at a point to point (port to port) data rate of 180 Mb/s. (At the start of this program, the bit error rate requirement (BER) was undefined, so it was treated as a design variable during the contract effort.) CDMA was selected over other multiple access techniques because it lends itself to bursty, asynchronous, concurrent communication and potentially can be implemented with off the shelf, reliable optical transceivers compatible with long term unattended operations. Temporal, temporal/spatial hybrids and single pulse per row (SPR, sometimes termed 'sonar matrices') matrix types of CDMA designs were considered. The design, analysis, and trade offs required by the statement of work selected a temporal/spatial CDMA scheme which has SPR properties as the preferred solution. This selected design can be implemented for feasibility demonstration with off the shelf components (which are identified in the bill of materials of the contract Final Report). The photonic network architecture of the selected design is based on M(8,4,4) matrix codes. The network requires eight multimode laser transmitters with laser pulses of 0.93 ns operating at 180 Mb/s and 9-13 dBm peak power, and 8 PIN diode receivers with sensitivity of -27 dBm for the 0.93 ns pulses. The wavelength is not critical, but 830 nm technology readily meets the requirements. The passive optical components of the photonic network are all multimode and off the shelf. Bit error rate (BER) computations, based on both electronic noise and intercode crosstalk, predict a raw BER of (10 exp -3) when all eight users are communicating concurrently. If better BER performance is required, then error correction codes (ECC) using near term electronic technology can be used. For example, the M(8,4,4) optical code together with Reed-Solomon (54,38,8) encoding provides a BER of better than (10 exp -11). The optical transceiver must then operate at 256 Mb/s with pulses of 0.65 ns because the 'bits' are now channel symbols.

Mendez, Antonio J.↗