Engineering Papers⌕ Search

NASA NTRS · 19720053591

High power microstrip RF switches.

Abstract

Description of a microstrip-type single-pole double-throw switch, which uses only two PIN diodes, eliminates usual dc blocking capacitors, and has demonstrated an RF power handling capacity greater than 100 W CW at S-band. The insertion loss is less than 0.25 dB, and the input-to-off port isolation is greater than 36 dB over a bandwidth larger than 30 MHz.

Keep this discovery

Explore connections, maps & timelines

BibTeXRIS

Choi, S. D., Boreham, J. F.. 1972-01-01. High power microstrip RF switches.. https://ntrs.nasa.gov/citations/19720053591

Cite the original work for its findings. Save a collection to share your selection of sources.