NASA NTRS · 19720053591
High power microstrip RF switches.
Abstract
Description of a microstrip-type single-pole double-throw switch, which uses only two PIN diodes, eliminates usual dc blocking capacitors, and has demonstrated an RF power handling capacity greater than 100 W CW at S-band. The insertion loss is less than 0.25 dB, and the input-to-off port isolation is greater than 36 dB over a bandwidth larger than 30 MHz.
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Choi, S. D., Boreham, J. F.. 1972-01-01. High power microstrip RF switches.. https://ntrs.nasa.gov/citations/19720053591
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