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We present data on the vulnerability of a variety of candidate spacecraft electronics to total ionizing dose and displacement damage. Devices tested include optoelectronics, digital, analog, linear bipolar devices, hybrid devices, Analog-to-Digital Converters (ADCs), and Digital-to-Analog Converters (DACS), among others.
We present data on the vulnerability of a variety of candidate spacecraft electronics to total ionizing dose and displacement damage. Devices tested include optoelectronics, digital, analog, linear bipolar devices, hybrid devices, Analog-to- Digital Converters (ADCs), and Digital-to-Analog Converters (DACs), among others. T
Current methods for calculating damage to solar cells are well documented in the GaAs Solar Cell Radiation Handbook (JPL 96-9). An alternative, the displacement damage dose (D(sub d)) method, has been developed by Summers, et al. This method is currently being implemented in the SAVANT computer program.
This document represents a final report on the Department of Energy (DOE) Office of Science, Office of Fusion Energy Science (OFES) Grant Entitled “Development and Qualification of Advanced Alloys Used in High Helium and Displacement Damage Service for Fusion Energy Applications” (DE-FG02-94ER54275). This grant has been funded since 1994, by a series of five and three-year renewals. We express our deep appreciation for the long-standing support by OFES for our fusion materials research. The latest three-year renewal was awarded in 2019. This renewal subsequently received a 1- year no-cost extension, followed by another funded 1-year phaseout period. Here, we focus on this five-year effort. The final report is composed of 35 Fusion Semiannual Reports covering the period from 2019 to 2024. In addition, Appendix A lists 158 fusion materials papers published since 1994, with the partial, or full, support of the OFES program. We note that, as metrics of their high impact, these papers have received a total of 8582 citations, with an average of 54 per paper.
In this paper we describe observed failures of optocouplers on the TOPEX/Poseidon (T/P) ocean measuring satellite. An indirect assessment is made of proton doses by the spacecraft, and these data are compared with laboratory proton irradiations of optocouplers. It is shown that the T/P failures occur at expected doses for proton-induced displacement damage.
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Although many different processes can be used to manufacture linear integrated circuits, the process that is used for most circuits is optimized for high voltage -- a total power supply voltage of about 40 V -- and low cost.
Silicon has long been known to exhibit amorphization in response to heavy particle bombardment. For doses below the total amorphization threshold, partial amorphization is observed in the form of scattered amorphous pockets. While extensive research has gone into modeling the formation and evolution of amorphous pockets in response to irradiation, no studies yet investigate their impact on the evolution of other damage such as interstitial supersaturation and clustering. In this study, we survey the impact of amorphous pockets on defect evolution in silicon when treated as static sinks. MD is first used to show that amorphous pockets provide energetically favorable sites for point defects relative to the crystalline bulk, supporting the hypothesis that they act as sinks. A 0-D cluster dynamics model is then constructed, taking an interstitial clustering model from the literature and including amorphous pockets as a sink species. We conduct our survey for temperatures between 30 and 400 °C and sink strengths between 1 to 6 x 10 10 cm −2 . Both implantation- and radiation-induced damage states are investigated using interstitial and vacancy concentrations as initial condition variables. We find that, due to the differing migration rates of the interstitial and the vacancy, amorphous pockets have a non-monotonic impact on the final damage state depending on the effective sink strength of the amorphous pockets, resulting in increased damage formation in regimes of intermediate amorphization. In conclusion, this result emphasizes the important role of amorphous pockets in governing the evolution of damage in partially amorphized crystalline materials.
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The conclusion are: 1. Description of NIEL calculation for short, mid, and longwave HgCdTe material compositions. 2. Full recoil spectra details captured and analyzed Importance of variance in high Z materials. 3. Can be applied directly to calculate damage distributions in arrays. 4. Future work will provide comparisons of measured array damage with calculated NIEL and damage energy distributions. 5. Technique to assess the full recoil spectrum behavior is extendable to other materials.
The objective is to develop an improved space solar cell radiation response analysis capability and to produce a computer modeling tool which implements the analysis. This was accomplished through analysis of solar cell flight data taken on the Microelectronics and Photonics Test Bed experiment. This effort specifically addresses issues related to rapid technological change in the area of solar cells for space applications in order to enhance system performance, decrease risk, and reduce cost for future missions.
A recent failure of Galileo's magnetic recorder was identified as LED degradation. Annealing the culprit OP133s proved successful and the irreplaceable data was recovered. Test data and modeling results calibrate an understanding of this incident.
A novel catastrophic breakdown mode in reversed biased Silicon carbide diodes has been seen for low LET particles. These particles are too low in LET to induce SEB, however SEB was seen from particles of higher LET. The low LET mechanism correlates with second breakdown in diodes due to increase leakage and assisted charge injection from incident particles. Percolation theory was used to predict some basic responses of the devices, but the inherent reliability issue with silicon carbide have proven challenging.