Ex situ bismuth doping for efficient CdSeTe thin-film solar cells with open-circuit voltages exceeding 900 mV
We dope CdTe solar cells with Bi after the device structure is completed using a solution process.
CdTe solar cell↗
SEARCH · Engineering Papers
Results for “CdTe”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Fast Epitaxial Growth and Extrinsic Doping of Single-Crystal Cd(Zn)Te on Silicon Substrate
The major goal of this project is to de-risk single-crystal CdTe solar cells grown on inexpensive silicon templates without post-growth halide treatments as a prototype to more stable, high-efficiency CdTe solar cells.
14 SOLAR ENERGY↗
As‐Doped Polycrystalline CdSeTe: Localized Defects, Carrier Mobility and Lifetimes, and Impact on High‐Efficiency Solar Cells
Abstract The efficiency potential for single‐junction photovoltaics (PV) is described by the detailed balance model, which requires the elimination of nonradiative recombination and perfect minority carrier collection. Improvements in GaAs, Si, and perovskite PV follow this model. It might be more complex for CdTe, a leading thin‐film PV technology. While lifetime, passivation, and doping goals for 25% efficient CdTe solar cells are largely reached, voltage is ≈20% below the detailed balance limit. Why is that? In Se‐alloyed CdSe x Te 1‐x (Se is required for >20% efficiency) additional losses can occur due to electrostatic and bandgap fluctuations and due to electronic trap states. To understand mechanisms limiting CdSeTe solar cell performance and to suggest improvements, carrier dynamics, and transport in CdSe x Te 1‐x with variation in Se composition and as doping is analyzed. It is shown that trapping, likely due to anion‐site defects and their complexes, is correlated with low charge carrier mobility of 0.1–0.6 cm 2 (Vs) −1 . Even with 1000 ns charge carrier lifetimes, carrier diffusion length is less than the absorber thickness, reducing efficiency to ≈23%. Device simulations are used to analyze the performance of CdSe x Te 1‐x solar cells; thermodynamic models are not sufficient for absorbers with electronic disorder and trapping.
14 SOLAR ENERGY↗
Scintillator based nuclear photovoltaic batteries for power generation at microwatts level
A nuclear photovoltaic battery uses scintillator to convert radiation into visible light, which is then collected by a photovoltaic (PV) cell to generate electricity. If the radiation is gamma-rays emitted from external sources, the battery may also be referred as gammavoltaic battery. In this study, a polycrystalline CdTe solar cell was optically coupled with a 2.0 cm × 2.0 cm × 1.0 cm Gadolinium Aluminum Gallium Garnet (GAGG) scintillator, and the resulting device was tested using intense gamma radiation fields from a Cs-137 (1.5 kRad/h) and a Co-60 (10 kRad/h) irradiator. Measurements with Cs-137 provided a maximum power output (P max ) of ~288 nW, with a short-circuit current density (J sc ) of ~1.22 μA/cm 2 and an open-circuit voltage (V oc ) of ~0.34 V. In contrast, Co-60 irradiator gave a P max of 1.5 μW, with a J sc of ~4.73 μA/cm 2 and a V oc of ~0.38 V. The CdTe was also paired with a Lutetium-Yttrium Oxyorthosilicate (LYSO) crystal and tested with the Cs-137 source. The experiment presents a scalable option to reach to higher power outputs by harvesting gamma radiation fields in many cases where high radiation field demands heavy shielding and is often regarded as unwanted waste.
25 ENERGY STORAGE↗
CdSeTe solar-cell performance with different dopant types
Four doping conditions were explored for CdTe-based solar cells: p-type As and P, n-type Al, and no intentional doping. In each case, the CdTe absorber was alloyed with Se, but only near the normal front-side, light entry for the cells, while the dopants were added from the back. Cells with p-dopants showed efficiencies up to 20% with front-side illumination, but the n-doped and undoped ones were close to zero. With back-side illumination, this was reversed with undoped up to 8% and p-doped ones only about 2%. These results are explained by Kelvin-probe measurements of electric-field profiles, which showed that the diode field was near the front for the higher-efficiency p-doping, but near the back for undoped and n-doped.
14 SOLAR ENERGY↗
The effects of antimony incorporation on the optoelectronic properties of Cd(Se,Te) photovoltaics
One historical limitation of CdTe PV devices has been the open circuit voltage (VOC) deficit (difference between theoretical maximum VOC and measured values). While non-radiative recombination at extended structural defects and interfaces negatively impacts VOC, intentionally adding impurities (dopants) to increase the concentration of free carriers in the photovoltaic (PV) absorber material can increase the VOC. In this contribution we present a detailed analysis of the Sb doped CdTe and the Cd(Se,Te) alloy system via electron beam induced current (EBIC) measurements and the presence as well as spatial distribution of defect levels through cathodoluminescence spectrum imaging (CLSI).
14 SOLAR ENERGY↗
Spin-Polarized Electron Sources Based on Group II-VI Compounds Grown by Atomic Layer Deposition
This project explored ALD as an alternative growth technique for II–VI photocathodes and assessed CdTe for spin-polarized electron production. Working with BNL (Cultrera group), we established the workflow to measure QE and spin polarization using BNL’s Mott polarimeter, and we prepared both conventional Cs/O NEA activation and a heterostructure NEA route leveraging an ultrathin Cs2Te overlayer. The latter provides a pragmatic activation alternative while maintaining photoexcitation primarily in CdTe.
43 PARTICLE ACCELERATORS↗
Upstream Extraction of Tellurium from Copper Concentrates
A major barrier to increasing CdTe PV module production is the availability of tellurium (Te), an element necessary to manufacture CdTe PV cells that currently has a very limited supply. Most Te is obtained from ore extracted for copper mining, but the current processing methods only extract 3-4% of the available Te in this ore, with the rest being discarded during other processing steps. This project aims to increase Te supply by developing an innovative extraction method that will recover more Te from the copper ore earlier in the process. This method will also extract toxic elements like antimony and arsenic, making the copper mining process more environmentally friendly.
14 SOLAR ENERGY↗
Doping with phosphorus reduces anion vacancy disorder in CdSeTe semiconductors enabling higher solar cell efficiency
Doping is used in many pn junction devices, such as polycrystalline solar cells, to increase the strength of the junction field to assist charge carrier collection and thus partially mitigate nonradiative recombination losses. We demonstrate a different doping characteristic for inorganic solar cells: using dopants to reduce charge carrier trapping and electronic band tails. Alloying CdTe with Se to form CdSeTe semiconductor reduced recombination, but CdSeTe has more complex defect states which can limit further efficiency gains due to charge carrier trapping and trap-limited mobility. Doping CdSeTe with P (but not N, As, or Sb in this study) reduces band tails (Urbach energies) and lessens the impact of the near valence band trap states, with ambipolar mobilities improving to >50 cm 2 V −1 s −1 , fill factor increasing from 76% to 79%, and efficiencies increasing by 0.9% absolute. Simulations are used to show how such defect reduction improves performance in the radiative limit.
14 SOLAR ENERGY↗
Microwave Photoconductance Spectrometer for Thin-Film Deposited Semiconductor Materials
A 10GHz microwave reflectometer was developed to measure the mobility-lifetime product in thin film semiconductors. Development focused on perovskite films (an emerging photovoltaic material) as well as CdTe (an established photovoltaic material).
47 OTHER INSTRUMENTATION↗
Interconnect: Cooperative Research and Development Final Report, CRADA Number CRD-13-00507 (Project 4)
This CRADA modification involves analyses on a variety of CdTe-PV related materials, test structures, solar cells, and modules produced at FSLR and/or NLR and adds analysis related to module degradation and reliability. Materials will be provided by FSLR, NLR, and/or by interleaving FSLR and NLR layers and processes. Module reliability activities will include technical risk assessment, materials characterization, module and test structure characterization, modeling, accelerated test development, and outdoor testing.
14 SOLAR ENERGY↗
Photovoltaics Research at NREL
General overview of NREL research, including scaling to terawatt PV, reliability testing, DuraMAT, perovskites, silicon PV, CdTe, III-V, and tandems.
CdTe↗
In‐Scribe Silane Bonding for Mechanical Reinforcement of Perovskite Photovoltaic Modules
Despite the extraordinary rise in power conversion efficiency over the last decade, metal halide perovskite (MHP) photovoltaics remain more mechanically fragile than other PV technologies. In this work, the scribe area, created by the monolithic interconnection of thin-film solar cells, is used to extrinsically reinforce the mechanical robustness of packaged MHP solar modules. In contrast to the epoxy-based chemistries often leveraged in the MHP literature, silane-grafted polyolefin encapsulants are designed to form strong covalent bonds to oxide surfaces, specifically to glass and the transparent conductive oxide at the base of the scribe line. Pseudo-modules encapsulated with silane-grafted polyolefin are measured with more than an order-of-magnitude enhancement infracture energy from 0.27 ± 0.01 J·m −2 (no scribes) to 5.97 ± 0.42 J·m −2 (scribes perpendicular to delamination directioncovering ≈2.2% of the module area). The silane-grafted polyolefin retains strong adhesion even after undergoing an accelerated IEC 61215 thermal cycling test consisting of 250 cycles. We find that the in-scribe bonding allows perovskite modules to have adhesion strength comparable to commercial c-Si and CdTe technologies with only 5% reduction in the active module area. This manufacturing-compatible approach offers a practical solution to address the mechanical integrity challenges in MHP solar modules, regardless of cell architecture.
14 SOLAR ENERGY↗
Evaporated CdSe for Efficient Polycrystalline CdSeTe Thin-Film Solar Cells
Recent progress has shown that alloying cadmium telluride (CdTe) with cadmium selenide (CdSe) to create a CdSexTe1-x (CdSeTe) gradient region can significantly boost the performance of polycrystalline CdSeTe thin-film solar cells. However, improper CdSeTe alloying might introduce problematic band alignment and deleterious voids at the front interface, limiting the benefit maximization of this technique. Here, we show that the CdSe layers deposited by thermal evaporation result in CdSeTe cells with a higher performance than the sputtered CdSe. This is because evaporated CdSe can avoid the formation of voids at the front interface, producing improved front junction quality with suppressed front junction nonradiative recombination. The champion cell using evaporated CdSe demonstrated a power conversion efficiency (PCE) of 19.7%, much higher than 18.1% in the cell using sputtered CdSe.
cadmium selenide↗
Eutectic Processing of Semiconductor Colloidal Nanocrystals for Energy Applications
Colloidal semiconductor nanocrystals (NCs) offer a costeffective platform for light-energy conversion in X-ray scintillators, photovoltaics, lasers, and display technologies. Yet, device-relevant NCs often require complex heterostructured compositions, where lattice imperfections compromise the efficiency and stability of photoconversion processes. Here, we show that a simple synthetic detour through a eutectic state of II−VI semiconductor NCs (e.g., CdSe, ZnSe) with halide salts (e.g., CdCl 2 , ZnCl 2 ) overcomes this limitation by melting and reconstructing NC lattices into defect-free alloyed and core/shell architectures. Applied to ternary CdSeTe NCs, this process produces downconverters with record brightness and minimal line widths, delivering a 3-fold increase in film-side external quantum efficiency of commercial CdTe photovoltaic modules (First Solar Inc.). Meanwhile, eutectic processing of CdSe-based core/shell emitters yields an 8-fold enhancement in their photoluminescence stability under backlight operation, addressing the reliability bottleneck for display technologies. Together, these findings establish eutectic NC processing as a scalable route to efficient, durable photoconversion materials for energy applications.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Calibration of a broadband x-ray crystal spectrometer using a continuum x-ray source and photon-counting detectors
We report measurements of sensitivity of a broadband (≃20–30 keV) x-ray crystal spectrometer using a bremsstrahlung continuum x-ray source and several detectors, including an energy-discriminating photon-counting point detector (Si drift diode, Amptek Inc.), imaging hybrid photon-counting detectors (Eiger2-Si and Eiger2-CdTe, DECTRIS Ltd.), and image plates (SR type). Sensitivity is defined as a ratio of the crystal-reflected energy-position-dispersed spectrum measured by a given detector to the incident non-dispersed spectrum measured using the energy-discriminating point detector. The sensitivity derived from data measured exclusively by the point detector is considered detector-independent and serves as a reference. The sensitivities derived from data collected with the hybrid photon-counting detectors were matched to the reference using a scale factor of 1.05. The image plate-derived sensitivities required a scale factor of 1.16 to match the reference. Furthermore, the resulting mismatch in the shapes of all measured scaled sensitivities in the range of the spectrometer was ≲±10%, while the mismatch between the shapes of the sensitivities corresponding to the Si-based detectors was ≲±2.5%.
Crystal optics↗
Impact of the Annealing Temperature on the Local Se Distribution and Optical Properties in CdSexTe1-x Solar Cells by Multimodal X-ray Microscopy
The introduction of Se in CdTe solar-cell absorbers has led to multiple beneficial effects in the devices, including an increased short-circuit current and an extended charge-carrier lifetime. A critical manufacturing step of CdSexTe1-x solar cells is CdCl2 annealing at high temperatures, during which Se diffuses through the absorber layer. Understanding the local Se distribution in the absorber and its impact on optical properties of the material is key for the further development of this thin-film solar cell technology. In a multimodal x-ray scanning microscopy approach, we investigated the impact of the annealing temperature of CdSexTe1-x solar cells on the Se distribution and on optical characteristics of the material. For this purpose, we exploited an upgraded x-ray excited optical luminescence (XEOL) detection unit that enables simultaneous spectrally and temporally resolved XEOL mapping at synchrotron facilities that are ideal for studying thin-film solar-cell materials with hard x-rays featuring high penetration depth and lateral resolution.
14 SOLAR ENERGY↗
Development of an Optical Library for Coevaporated CdSe x Te 1– x
The conversion efficiency of CdTe solar cells may be improved by bandgap engineering, i.e., changing the bandgap value through the addition of Se in the absorber. The Se alloying enables a short-circuit current density improvement, as it leads to a bandgap energy value decrease. Furthermore, it has been associated with increased minority carrier lifetimes, assuring high open-circuit voltage values. An Se gradient profile control can further optimize the solar cell performance. Thus, an optical model baseline of the CdSe x Te 1–x (CST) compound was developed. Spectroscopic ellipsometry measurements were conducted to accurately extract the optical constants of ten CST layers deposited through coevaporation with x varying from 0 to 1. Using the measured dielectric function spectra from the discrete CST layers with varying x, and considering the composition-induced shift in the critical point energies, an energy-shift model was employed to develop the accurate optical library for the CST compound for any x value to provide data for future modeling and optimization. Furthermore, the library accuracy was validated through optical simulations of the quantum efficiency of a graded CST solar cell using the finite-difference time-domain method by replicating the Se profile in the absorber layer measured through secondary ion mass spectrometry.
14 SOLAR ENERGY↗