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At least 523 records · Page 29

Self-checking on-line testable static RAM

This is a fault-tolerant random access memory for use in fault-tolerant computers. It comprises a plurality of memory chips each comprising a plurality of on-line testable and correctable memory cells disposed in rows and columns for holding individually addressable binary bits and provision for error detection incorporated into each memory cell for outputting an error signal whenever a transient error occurs therein. In one embodiment, each of the memory cells comprises a pair of static memory sub-cells for simultaneously receiving and holding a common binary data bit written to the memory cell and the error detection provision comprises comparator logic for continuously sensing and comparing the contents of the memory sub-cells to one another and for outputting the error signal whenever the contents do not match. In another embodiment, each of the memory cells comprises a static memory sub-cell and a dynamic memory sub-cell for simultaneously receiving and holding a common binary data bit written to the memory cell and the error detection provision comprises comparator logic for continuously sensing and comparing the contents of the static memory sub-cell to the dynamic memory sub-cell and for outputting the error signal whenever the contents do not match. Capability for correction of errors is also included.

Chau, Savio N.↗

Systems aspects of COBE science data compression

A general approach to compression of diverse data from large scientific projects has been developed and this paper addresses the appropriate system and scientific constraints together with the algorithm development and test strategy. This framework has been implemented for the COsmic Background Explorer spacecraft (COBE) by retrofitting the existing VAS-based data management system with high-performance compression software permitting random access to the data. Algorithms which incorporate scientific knowledge and consume relatively few system resources are preferred over ad hoc methods. COBE exceeded its planned storage by a large and growing factor and the retrieval of data significantly affects the processing, delaying the availability of data for scientific usage and software test. Embedded compression software is planned to make the project tractable by reducing the data storage volume to an acceptable level during normal processing.

Freedman, I.↗

Rutger's CAM2000 chip architecture

This report describes the architecture and instruction set of the Rutgers CAM2000 memory chip. The CAM2000 combines features of Associative Processing (AP), Content Addressable Memory (CAM), and Dynamic Random Access Memory (DRAM) in a single chip package that is not only DRAM compatible but capable of applying simple massively parallel operations to memory. This document reflects the current status of the CAM2000 architecture and is continually updated to reflect the current state of the architecture and instruction set.

Smith, Donald E.↗

Polarimetric Multispectral Imaging Technology

The Jet Propulsion Laboratory is developing a remote sensing technology on which a new generation of compact, lightweight, high-resolution, low-power, reliable, versatile, programmable scientific polarimetric multispectral imaging instruments can be built to meet the challenge of future planetary exploration missions. The instrument is based on the fast programmable acousto-optic tunable filter (AOTF) of tellurium dioxide (TeO2) that operates in the wavelength range of 0.4-5 microns. Basically, the AOTF multispectral imaging instrument measures incoming light intensity as a function of spatial coordinates, wavelength, and polarization. Its operation can be in either sequential, random access, or multiwavelength mode as required. This provides observation flexibility, allowing real-time alternation among desired observations, collecting needed data only, minimizing data transmission, and permitting implementation of new experiments. These will result in optimization of the mission performance with minimal resources. Recently we completed a polarimetric multispectral imaging prototype instrument and performed outdoor field experiments for evaluating application potentials of the technology. We also investigated potential improvements on AOTF performance to strengthen technology readiness for applications. This paper will give a status report on the technology and a prospect toward future planetary exploration.

Cheng, L.-J.↗

Electron trapping data storage system and applications

The advent of digital information storage and retrieval has led to explosive growth in data transmission techniques, data compression alternatives, and the need for high capacity random access data storage. Advances in data storage technologies are limiting the utilization of digitally based systems. New storage technologies will be required which can provide higher data capacities and faster transfer rates in a more compact format. Magnetic disk/tape and current optical data storage technologies do not provide these higher performance requirements for all digital data applications. A new technology developed at the Optex Corporation out-performs all other existing data storage technologies. The Electron Trapping Optical Memory (ETOM) media is capable of storing as much as 14 gigabytes of uncompressed data on a single, double-sided 54 inch disk with a data transfer rate of up to 12 megabits per second. The disk is removable, compact, lightweight, environmentally stable, and robust. Since the Write/Read/Erase (W/R/E) processes are carried out 100 percent photonically, no heating of the recording media is required. Therefore, the storage media suffers no deleterious effects from repeated Write/Read/Erase cycling.

Brower, Daniel↗

Making A D-Latch Sensitive To Alpha Particles

Standard complementary metal oxide/semiconductor (CMOS) D-latch integrated circuit modified to increase susceptibility to single-event upsets (SEU's) (changes in logic state) caused by impacts of energetic alpha particles. Suitable for use in relatively inexpensive bench-scale SEU tests of itself and of related integrated circuits like static random-access memories.

Buehler, Martin G.↗

Assessing the SEU resistance of CMOS latches using alpha-particle sensitive test circuits

The importance of Cosmic Rays on the performance of integrated circuits (IC's) in a space environment is evident in the upset rate of the Tracking and Data Relay Satellite (TDRS) launched in Apr. 1983. This satellite experiences a single-event-upset (SEU) per day which must be corrected from the ground. Such experience caused a redesign of the Galileo spacecraft with SEU resistant IC's. The solution to the SEU problem continues to be important as the complexity of spacecraft grows, the feature size of IC's decreases, and as space systems are designed with circuits fabricated at non-radiation hardened foundries. This paper describes an approach for verifying the susceptibility of CMOS latches to heavy-ion induced state changes. The approach utilizes alpha particles to induce the upsets in test circuits. These test circuits are standard cells that have offset voltages which sensitize the circuits to upsets. These results are then used to calculate the upsetability at operating voltages. In this study results are presented for the alpha particle upset of a six-transistor static random access memory (SRAM) cell. Then a methodology is described for the analysis of a standard-cell inverter latch.

Buehler, M.↗

Data storage technology comparisons

The role of data storage and data storage technology is an integral, though conceptually often underestimated, portion of data processing technology. Data storage is important in the mass storage mode in which generated data is buffered for later use. But data storage technology is also important in the data flow mode when data are manipulated and hence required to flow between databases, datasets and processors. This latter mode is commonly associated with memory hierarchies which support computation. VLSI devices can reasonably be defined as electronic circuit devices such as channel and control electronics as well as highly integrated, solid-state devices that are fabricated using thin film deposition technology. VLSI devices in both capacities play an important role in data storage technology. In addition to random access memories (RAM), read-only memories (ROM), and other silicon-based variations such as PROM's, EPROM's, and EEPROM's, integrated devices find their way into a variety of memory technologies which offer significant performance advantages. These memory technologies include magnetic tape, magnetic disk, magneto-optic disk, and vertical Bloch line memory. In this paper, some comparison between selected technologies will be made to demonstrate why more than one memory technology exists today, based for example on access time and storage density at the active bit and system levels.

Katti, Romney R.↗

Single event effects and laser simulation studies

The single event upset (SEU) linear energy transfer threshold (LETTH) of radiation hardened 64K Static Random Access Memories (SRAM's) was measured with a picosecond pulsed dye laser system. These results were compared with standard heavy ion accelerator (Brookhaven National Laboratory (BNL)) measurements of the same SRAM's. With heavy ions, the LETTH of the Honeywell HC6364 was 27 MeV-sq cm/mg at 125 C compared with a value of 24 MeV-sq cm/mg obtained with the laser. In the case of the second type of 64K SRAM, the IBM640lCRH no upsets were observed at 125 C with the highest LET ions used at BNL. In contrast, the pulsed dye laser tests indicated a value of 90 MeV-sq cm/mg at room temperature for the SEU-hardened IBM SRAM. No latchups or multiple SEU's were observed on any of the SRAM's even under worst case conditions. The results of this study suggest that the laser can be used as an inexpensive laboratory SEU prescreen tool in certain cases.

Kim, Q.↗

The NSO FTS database program and archive (FTSDBM)

Data from the NSO Fourier transform spectrometer is being re-archived from half inch tape onto write-once compact disk. In the process, information about each spectrum and a low resolution copy of each spectrum is being saved into an on-line database. FTSDBM is a simple database management program in the NSO external package for IRAF. A command language allows the FTSDBM user to add entries to the database, delete entries, select subsets from the database based on keyword values including ranges of values, create new database files based on these subsets, make keyword lists, examine low resolution spectra graphically, and make disk number/file number lists. Once the archive is complete, FTSDBM will allow the database to be efficiently searched for data of interest to the user and the compact disk format will allow random access to that data.

Lytle, D. M.↗

VLSI-based Video Event Triggering for Image Data Compression

Long-duration, on-orbit microgravity experiments require a combination of high resolution and high frame rate video data acquisition. The digitized high-rate video stream presents a difficult data storage problem. Data produced at rates of several hundred million bytes per second may require a total mission video data storage requirement exceeding one terabyte. A NASA-designed, VLSI-based, highly parallel digital state machine generates a digital trigger signal at the onset of a video event. High capacity random access memory storage coupled with newly available fuzzy logic devices permits the monitoring of a video image stream for long term (DC-like) or short term (AC-like) changes caused by spatial translation, dilation, appearance, disappearance, or color change in a video object. Pre-trigger and post-trigger storage techniques are then adaptable to archiving only the significant video images.

Williams, Glenn L.↗

Petabyte mass memory system using the Newell Opticel(TM)

A random access system is proposed for digital storage and retrieval of up to a Petabyte of user data. The system is comprised of stacked memory modules using laser heads writing to an optical medium, in a new shirt-pocket-sized optical storage device called the Opticel. The Opticel described is a completely sealed 'black box' in which an optical medium is accelerated and driven at very high rates to accommodate the desired transfer rates, yet in such a manner that wear is virtually eliminated. It essentially emulates a disk, but with storage area up to several orders of magnitude higher. Access time to the first bit can range from a few milliseconds to a fraction of a second, with time to the last bit within a fraction of a second to a few seconds. The actual times are dependent on the capacity of each Opticel, which ranges from 72 Gigabytes to 1.25 Terabytes. Data transfer rate is limited strictly by the head and electronics, and is 15 Megabits per second in the first version. Independent parallel write/read access to each Opticel is provided using dedicated drives and heads. A Petabyte based on the present Opticel and drive design would occupy 120 cubic feet on a footprint of 45 square feet; with further development, it could occupy as little as 9 cubic feet.

Newell, Chester W.↗

Combining Video Memory Operations

Designs of video random-access memory (VRAM) integrated circuits operating under control by external logic circuits simplified according to concept of combining two memory operations performed separately heretofore. Eliminates need for DRAM-refresh timers and counters, reducing amount of circuitry needed to control VRAM thereby reducing time needed to design VRAM. Simplification also reduces time needed to redesign DRAM-refresh logic circuitry when adapting VRAM design to another VRAM for which timing specifications different. Concept can be applied to VRAM clocking data out to display unit continuously.

Kania, Michael J.↗

Gas-Sensing Flip-Flop Circuits

Gas-sensing integrated circuits consisting largely of modified static random-access memories (SRAMs) undergoing development, building on experience gained in use of modified SRAMs as radiation sensors. Each SRAM memory cell includes flip-flop circuit; sensors exploit metastable state that lies between two stable states (corresponding to binary logic states) of flip-flop circuit. Voltages of metastable states vary with exposures of gas-sensitive resistors.

Buehler, Martin G.↗

Universal Signal Conditioning Amplifier

The Technological Research and Development Authority (TRDA) and NASA-KSC entered into a cooperative agreement in March of 1994 to achieve the utilization and commercialization of a technology development for benefiting both the Space Program and U.S. industry on a "dual-use basis". The technology involved in this transfer is a new, unique Universal Conditioning Amplifier (USCA) used in connection with various types of transducers. The project was initiated in partnership with I-Net Corporation, Lockheed Martin Telemetry & Instrumentation (formerly Loral Test and Information Systems) and Brevard Community College. The project consists of designing, miniaturizing, manufacturing, and testing an existing prototype of USCA that was developed for NASA-KSC by the I-Net Corporation. The USCA is a rugged and field-installable self (or remotely)- programmable amplifier that works in combination with a tag random access memory (RAM) attached to various types of transducers. This summary report comprises performance evaluations, TRDA partnership tasks, a project summary, project milestones and results.

Kinney, Frank↗

Design of the Wind Tunnel Model Communication Controller Board

The NASA Langley Research Center's Wind Tunnel Reinvestment project plans to shrink the existing data acquisition electronics to fit inside a wind tunnel model. Space limitations within a model necessitate a distributed system of Application Specific Integrated Circuits (ASICs) rather than a centralized system based on PC boards. This thesis will focus on the design of the prototype of the communication Controller board. A portion of the communication Controller board is to be used as the basis of an ASIC design. The communication Controller board will communicate between the internal model modules and the external data acquisition computer. This board is based around an Field Programmable Gate Array (FPGA), to allow for reconfigurability. In addition to the FPGA, this board contains buffer Random Access Memory (RAM), configuration memory (EEPROM), drivers for the communications ports, and passive components.

Wilson, William C.↗

SRAM Based Re-programmable FPGA for Space Applications

An SRAM (static random access memory)-based reprogrammable FPGA (field programmable gate array) is investigated for space applications. A new commercial prototype, named the RS family, was used as an example for the investigation. The device is fabricated in a 0.25 micrometers CMOS technology. Its architecture is reviewed to provide a better understanding of the impact of single event upset (SEU) on the device during operation. The SEU effect of different memories available on the device is evaluated. Heavy ion test data and SPICE simulations are used integrally to extract the threshold LET (linear energy transfer). Together with the saturation cross-section measurement from the layout, a rate prediction is done on each memory type. The SEU in the configuration SRAM is identified as the dominant failure mode and is discussed in detail. The single event transient error in combinational logic is also investigated and simulated by SPICE. SEU mitigation by hardening the memories and employing EDAC (error detection and correction) at the device level are presented. For the configuration SRAM (CSRAM) cell, the trade-off between resistor de-coupling and redundancy hardening techniques are investigated with interesting results. Preliminary heavy ion test data show no sign of SEL (single event latch-up). With regard to ionizing radiation effects, the increase in static leakage current (static I(sub CC)) measured indicates a device tolerance of approximately 50krad(Si).

Wang, J. J.↗

Solar Particle Induced Upsets in the TDRS-1 Attitude Control System RAM During the October 1989 Solar Particle Events

The three large solar particle events, beginning on October 19, 1989 and lasting approximately six days, were characterized by high fluences of solar protons and heavy ions at 1 AU. During these events, an abnormally large number of upsets (243) were observed in the random access memory of the attitude control system (ACS) control processing electronics (CPE) on-board the geosynchronous TDRS-1 (Telemetry and Data Relay Satellite). The RAM unit affected was composed of eight Fairchild 93L422 memory chips. The Galileo spacecraft, launched on October 18, 1989 (one day prior to the solar particle events) observed the fluxes of heavy ions experienced by TDRS-1. Two solid-state detector telescopes on-board Galileo, designed to measure heavy ion species and energy, were turned on during time periods within each of the three separate events. The heavy ion data have been modeled and the time history of the events reconstructed to estimate heavy ion fluences. These fluences were converted to effective LET spectra after transport through the estimated shielding distribution around the TDRS-1 ACS system. The number of single event upsets (SEU) expected was calculated by integrating the measured cross section for the Fairchild 93L422 memory chip with average effective LET spectrum. The expected number of heavy ion induced SEU's calculated was 176. GOES-7 proton data, observed during the solar particle events, were used to estimate the number of proton-induced SEU's by integrating the proton fluence spectrum incident on the memory chips, with the two-parameter Bendel cross section for proton SEU'S. The proton fluence spectrum at the device level was gotten by transporting the protons through the estimated shielding distribution. The number of calculated proton-induced SEU's was 72, yielding a total of 248 predicted SEU'S, very dose to the 243 observed SEU'S. These calculations uniquely demonstrate the roles that solar heavy ions and protons played in the production of SEU's during the October 1989 solar particle events.

Croley, D. R.↗