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At least 523 records · Page 29
All sourcesNASA NTRSDOE OSTI
NASA NTRS1980

Incorporation of metal ions into polyimides

The effects of the incorporation of metal ions into various polyimides on polyimide properties are investigated. Polyimide films derived from 3,3',4,4'-benzophenone tetracarboxylic acid dianhydride (BDTA) 3,3'-diaminobenzophenone (m,m'-DABP), 4,4'-diaminobenzophenone (p,p'-DABP) or 4,4'-oxydianiline were prepared with the concurrent addition of approximately 20 metals in a variety of forms. In general, it is found that the films derived from BDTA + p,p'-DABP were brittle and of poor quality, with brittle films also produced in most of the BDTA + m, m'-DABP polyimides regardless of whether the added metal was hydrate or anhydrous. Thermomechanical analysis, torsional braid analysis, thermal gravimetric analysis, infrared spectral analysis and isothermal studies on many of the polyimide films produced indicate that the softening temperature is generally increased upon the addition of metal ions, at the expense of thermal stability, while no changes in chemical functionality are observed. The best system studied in regard to polymer property enhancement appears to be tri(acetylacetonato)aluminum(III) added to the m, m'-DABP polyamide, which has been found to exhibit four times the lap shear strength of the polyimide alone.

Taylor, L. T.↗
NASA NTRS1980

Adherence of ion beam sputter deposited metal films on H-13 steel

An electron bombardment argon ion source sputter deposited 17 metals and metal oxides on H-13 steel. The films ranged 1 to 8 micrometers in thickness and their adherence was generally greater than the capacity of the measuring device; adherence quality depended on proper precleaning of the substrate before deposition. N2 or air was introduced for correct stoichiometry in metallic compounds. Au, Ag, MgO, and Ta5Si3 films 8 microns thick have bond strength equal to 1 micron coatings; the bond strength of pure metallic films up to 5 microns thick was greater than the epoxy to film bond (8000 psi). The results of exposures of coated material to temperatures up to 700 C are presented.

Mirtich, M. J.↗
NASA NTRS1980

A base-metal conductor system for silicon solar cells

Solder, copper, and silver are evaluated as conductor layer metals for silicon solar cell metallization on the basis of metal price stability and reliability under operating conditions. Due to its properties and cost, copper becomes an attractive candidate for the conductor layer. It is shown that nickel operates as an excellent diffusion barrier between copper and silicon while simultaneously serving as an electrical contact and mechanical contact to silicon. The nickel-copper system may be applied to the silicon by plating techniques utilizing a variety of plating bath compositions. Solar cells having excellent current-voltage characteristics are fabricated to demonstrate the nickel-copper metallization system.

Coleman, M. G.↗
NASA NTRS1981

Incorporation of metal related materials into electrically neutral polymers

Developments in the field of metal-containing polymers are reviewed with emphasis on neutral polymers incorporating dissolved metal salts, metal complexes, organometallic compounds, and metals. Polymer systems discussed include: polyamides, polyimides, polyalcohols, polyesters, polyacetylene, polyethylene, and polysiloxane. Most of the studies focus on the modification of polymer properties such as adhesive properties, thermal behavior, electrical conductivity, polymer flammability, and mechanical properties.

St. Clair, A. K.↗
NASA NTRS1981

Amorphous metallizations for high-temperature semiconductor device applications

The initial results of work on a class of semiconductor metallizations which appear to hold promise as primary metallizations and diffusion barriers for high temperature device applications are presented. These metallizations consist of sputter-deposited films of high T sub g amorphous-metal alloys which (primarily because of the absence of grain boundaries) exhibit exceptionally good corrosion-resistance and low diffusion coefficients. Amorphous films of the alloys Ni-Nb, Ni-Mo, W-Si, and Mo-Si were deposited on Si, GaAs, GaP, and various insulating substrates. The films adhere extremely well to the substrates and remain amorphous during thermal cycling to at least 500 C. Rutherford backscattering and Auger electron spectroscopy measurements indicate atomic diffussivities in the 10 to the -19th power sq cm/S range at 450 C.

Wiley, J. D.↗
NASA NTRS1982

Origin of rapidly solidified metal-troilite grains in chondrites and iron meteorites

Quantitative evidence is adduced by cooling rate calculations for the impact melting, on the surface of a parent body, of troilite and metallic Fe, Ni inclusions found on 12 ordinary chondrites rather than their formation at depth from an internally derived melt. In the case of the Shaw and Rose City breccias of unmelted and melted material, their melted metal need not have cooled through 1000 C within a few meters of the surface. Shock-melted, fine-grained, irregular intergrowths of metal and troilite form in situ in many irons and some chondrites by rapid solidification at cooling rates greater than 100,000 C/sec, so that their kamacite and taenite compositions may result from annealing of metallic glass or very fine quench products at about 250 C.

Scott, E. R. D.↗
NASA NTRS1984

Stabilizing Crystal Oscillators With Melting Metals

Heat of fusion provides extended period of constant temperature and frequency. Crystal surrounded by metal in spherical container. As outside temperature rises to melting point of metal, metal starts to liquefy; but temperature stays at melting point until no solid metal remains. Potential terrestrial applications include low-power environmental telemetering transmitters and instrumentation transmitters for industrial processes.

Stephens, J. B.↗
NASA NTRS1984

Plated Metal Powders for Electrode Pastes

Metal grains to be sintered precoated with frit metal. Coated metal powders used to make ink-like electrode pastes for printing and sintering electrode-fabrication process. Grains of base metal coated with lowmelting-point--, lead or tin-- by electroless deposition.

Bickler, D. B.↗
NASA NTRS1983

Mechanical and spectroscopic properties of metal-containing polyimides

The incorporation of specific metal ions into polyimides is described. Detailed studies have included various compounds of copper, lithium, and palladium as dopants. Addition of the metal during polymerization or after formation of the polyamic acid precedes the thermal imidization step. With many dianhydride-diamine-dopant combinations high quality variously colored films are produced. Many metal doped films exhibit (1) improved high temperature adhesive properties, (2) increased electrical conductivity, (3) excellent thermal stability, (4) improved acid/base resistance, (5) increased modulus in flexible films and (6) excellent high temperature tensile strength. X-ray photo-electron spectroscopic study of these films suggests that many of the additives undergo chemical modification during thermal imidization. Palladium dopants appear to be partially reduced to the metallic state, while lithium and copper dopants are probably converted to their oxides. Ion etching experiments with Auger electron spectroscopy monitoring are discussed.

Taylor, L. T.↗
NASA NTRS1983

Process for the production of metal nitride sintered bodies and resultant silicon nitride and aluminum nitride sintered bodies

A process for the manufacture of metal nitride sintered bodies, in particular, a process in which a mixture of metal nitrite powders is shaped and heated together with a binding agent is described. Of the metal nitrides Si3N4 and AIN were used especially frequently because of their excellent properties at high temperatures. The goal is to produce a process for metal nitride sintered bodies with high strength, high corrosion resistance, thermal shock resistance, thermal shock resistance, and avoidance of previously known faults.

Yajima, S.↗
NASA NTRS1984

Laser-assisted solar cell metallization processing

Laser-assisted processing techniques utilized to produce the fine line, thin metal grid structures that are required to fabricate high efficiency solar cells are examined. Two basic techniques for metal deposition are investigated; (1) photochemical decomposition of liquid or gas phase organometallic compounds utilizing either a focused, CW ultraviolet laser (System 1) or a mask and ultraviolet flood illumination, such as that provided by a repetitively pulsed, defocused excimer laser (System 2), for pattern definition, and (2) thermal deposition of metals from organometallic solutions or vapors utilizing a focused, CW laser beam as a local heat source to draw the metallization pattern.

Dutta, S.↗
NASA NTRS1984

Laser-assisted solar cell metallization processing

Laser assisted processing techniques utilized to produce the fine line, thin metal grid structures that are required to fabricate high efficiency solar cells are investigated. The tasks comprising these investigations are summarized. Metal deposition experiments are carried out utilizing laser assisted pyrolysis of a variety of metal bearing polymer films and metalloorganic inks spun onto silicon substrates. Laser decomposition of spun on silver neodecanoate ink yields very promising results. Solar cell comb metallization patterns are written using this technique.

Dutta, S.↗
NASA NTRS1984

Characterization of erosion of metallic materials under cavitation attack in a mineral oil

Cavitation erosion and erosion rates of eight metallic materials representing three crystal structures were studied using a 20-kHz ultrasonic magnetostrictive oscillator in viscous mineral oil. The erosion rates of the metals with an fcc matrix were 10 to 100 times higher than that of an hcp-matrix titanium alloy. The erosion rates of iron and molybdenum, with bcc matrices, were higher than that of the titanium alloy but lower than those of the fcc metals. Scanning electron microscopy indicates that the cavitation pits are initially formed at the grain boundaries and precipitates and that the pits that formed at the triple points grew faster than the others. Transcrystalline craters formed by cavitation attack over the surface of grains and roughened the surfaces by multiple slip and twinning. Surface roughness measurements show that the pits that formed over the grain boundaries deepended faster than other pits. Computer analysis revealed that a geometric expression describes the nondimensional erosion curves during the time period 0.5 t(0) t 2.5 t(0), where t(0) is the incubation period. The fcc metals had very short incubation periods; the titanium alloy had the longest incubation period.

Rao, B. C. S.↗
NASA NTRS1984

Experimental determination of the partitioning of gallium between solid iron metal and synthetic basaltic melt Electron and ion microprobe study

The distribution of Ga between solid Fe metal and synthetic basaltic melt is investigated experimentally at temperatures of 1190 and 1330 C, and over a narrow range of oxygen fugacities. Metal-silicate reversal experiments were conducted, indicating a close approach to equilibrium. The analysis of the partitioned products was performed using electron and ion microprobes. At one bar total pressure, the solid metal/silicate melt partition coefficient D(Ga) is used to evaluate metal-silicate fractionation processes in the earth, moon, and Eucrite Parent Body (EPB). It is found that the depletion of Ga abundances in the EPB is due to the extraction of Ga into a metallic core. Likewise, the depletion of Ga in the lunar mantle is consistent with the extraction of Ga into a smaller lunar core if Ga was originally present in a subchondritic concentration. The relatively high Ga abundances in the earth's mantle are discussed, with reference to several theoretical models.

Drake, M. J.↗
NASA NTRS1986

Metalization Patterns by Thermal Decomposition

Metal interconnection pattern deposited on integrated circuit or solar cell economically by thermal decomposition of metallo-organic compound. In proposed process beam from laser or quartz lamp swept over substrate in required metalization pattern; wherever beam impinges on substrate, radiant heat decomposes compound, depositing metal. Process requires less costly equipment and less time than conventional metalization. Process readily adaptable to very-large-scale integrated (VLSI) circuits.

Gallagher, B. D.↗
NASA NTRS1984

Effect of humidity on fretting wear of several pure metals

Fretting wear experiments with several pure metals were conducted in air at various relative humidity levels. The materials used were iron, aluminum, copper, silver, chromium, titanium, and nickel. Each pure metal had a maximum fretting wear volume at a specific humidity level RH sub max that was not dependent on mechanical factors such as contact load, fretting amplitude, and frequency in the ranges studied. The weight loss due to fretting wear at RH sub max for each pure metal decreased with increasing heat of oxygen adsorption on the metal, indicating that adhesive wear dominated at RH sub max.

Goto, H.↗
NASA NTRS1984

Effect of barrier height on friction behavior of the semiconductors silicon and gallium arsenide in contact with pure metals

Friction experiments were conducted for the semiconductors silicon and gallium arsenide in contact with pure metals. Polycrystalline titanium, tantalum, nickel, palladium, and platinum were made to contact a single crystal silicon (111) surface. Indium, nickel, copper, and silver were made to contact a single crystal gallium arsenide (100) surface. Sliding was conducted both in room air and in a vacuum of 10 to the minus 9th power torr. The friction of semiconductors in contact with metals depended on a Schottky barrier height formed at the metal semiconductor interface. Metals with a higher barrier height on semiconductors gave lower friction. The effect of the barrier height on friction behavior for argon sputtered cleaned surfaces in vacuum was more specific than that for the surfaces containing films in room air. With a silicon surface sliding on titanium, many silicon particles back transferred. In contrast, a large quantity of indium transferred to the gallium arsenide surface.

Mishina, H.↗