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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 523 records · Page 29
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Comparative Investigation of Current-Source Inverters using SiC Discrete Devices and Power Modules

The purpose of this paper is to investigate the impact of the SiC device packages on the commutation performance characteristics of current-source inverters (CSIs). The parasitic components in the CSI current commutation loop between the two-phase legs and output capacitors have a significant impact on the high-frequency performance of the SiC devices. To meet the elevated current requirements of high-power CSIs, it is often necessary to connect multiple discrete devices in parallel which increases the current commutation loop length. The selection of compact high-power SiC MOSFET and Schottky diode modules instead of discrete devices can be highly desirable to reduce the loop inductance and improve the system performance and power density. Two CSI benchtop prototype units, one with SiC discrete devices and the other with power modules, have been designed and tested, and the performances of the two CSIs are compared. The CSI with SiC power modules significantly reduces the inverter volume and lowers the parasitic inductance by 60% and the voltage ripple amplitude by 20% compared to the CSI unit with discrete devices.

42 ENGINEERING↗
DOE OSTI2014

Effect of annealing treatment on the electrical characteristics of Pt/Cr-embedded ZnO/Pt resistance random access memory devices

ZnO/Cr/ZnO trilayer films sandwiched with Pt electrodes were prepared for nonvolatile resistive memory applications. The threshold voltage of a ZnO device embedded with a 3-nm Cr interlayer was approximately 50% lower than that of a ZnO monolayer device. This study investigated threshold voltage as a function of Cr thickness. Both the ZnO monolayer device and the Cr-embedded ZnO device structures exhibited resistance switching under electrical bias both before and after rapid thermal annealing (RTA) treatment, but resistive switching effects in the two cases exhibited distinct characteristics. Compared with the as-fabricated device, the memory cell after RTA demonstrated remarkable device parameter improvements, including a lower threshold voltage, a lower write current, and a higher R{sub off}/R{sub on} ratio. Both transmission electron microscope observations and Auger electron spectroscopy revealed that the Cr charge trapping layer in Cr-embedded ZnO dispersed uniformly into the storage medium after RTA, and x-ray diffraction and x-ray photoelectron spectroscopy analyses demonstrated that the Cr atoms lost electrons to become Cr{sup 3+} ions after dispersion. These results indicated that the altered status of Cr in ZnO/Cr/ZnO trilayer films during RTA treatment was responsible for the switching mechanism transition.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Characterization and Analysis of the Energy-Reporting Accuracy of Connected Devices

Emerging energy-efficient building systems increasingly exhibit greater functionality, often requiring multiple operating modes (e.g. white-tunability for lighting products and data traffic for devices with networked, integrated sensors). This increased functionality makes energy consumption estimates more complex. Given that these functions consume energy, the energy performance of such building systems is dependent on what operating modes they use and how much time they spend in each mode. Devices and systems that can report their own energy consumption mitigate this energy-performance uncertainty. This study explores the energy-reporting accuracy of market-available connected electrical outlets. The study considers two residential-market products (five units each, one outlet per unit) and three commercial-market products (two units each, 18 to 24 outlets per unit) with the ability to report power drawn and/or energy consumed by devices connected to their receptacles. The products were purchased through typical market channels. Pacific Northwest National Laboratory (PNNL) conducted testing in December 2018 at its Connected Lighting Test Bed (CLTB), using a custom-developed test setup and method adapted from industry standards. The setup collected energy-consumption data reported by the outlet devices under test (DUTs) at one-minute intervals and compared that data with measurements taken by a reference meter over a range of test conditions. The residential products reported power draw but not interval or cumulative energy consumption. The commercial products reported both power draw and cumulative energy consumption. Relative reporting error (RRE) was calculated for all measurements, and analysis of the results revealed variations across devices and test conditions. The total number of measurements (50 for each residential product, 60 for each commercial product) offers an appreciable comparison of performance at the make/model level. The average RRE of the residential products derived from reported power draw was -0.02% and -1.20%. The average RRE for two of the three the commercial products derived from reported power draw was worse than those of the residential products (-2.40%, -2.72%, -0.36%). The internal integration of power over time, used to calculate cumulative energy consumption, typically occurs at current and voltage sampling rates much higher than once per minute. This suggests that the average commercial-product RRE derived from reported energy consumption should be very consistent and better than performance based on reported power draw. However, the RRE derived from reported energy consumption varied significantly across the three makes of commercial-market products and was uniformly less accurate than performance based on reported power draw. Subsequent analysis identified a number of root causes for this decrease in performance, most of which were related to reporting resolution. The goals of this study are to generate awareness of building systems capable of reporting their own energy consumption, further interest in the value of energy data for a variety of uses, draw attention to how the accuracy of reported metrics can be characterized, and quantify the performance variation found in marketavailable products. The results of this study and subsequent related work may be relevant to stakeholders in industry-specification and standards-development organizations. The methods this study employs could inform test and measurement procedures and performance classifications for connected outlets, lighting products, and other building systems capable of reporting their own energy consumption. The study concludes with stakeholder recommendations, including the following: • Energy-reporting device and system manufacturers developing products that report energy consumption should characterize the accuracy of reported metrics using a reference meter calibrated by an independent laboratory that was accredited by an ILAC MRA signatory (and whose scope of accreditation explicitly covers energy measurement), and should include this information on product data sheets. • Standards and specification development organizations should develop application-specific performance classifications that end users can understand and relate to their energy-data use needs (e.g., 2% accuracy class for utility streetlight energy billing needs, or 10% accuracy class for ESCO performance verification needs). • Current or potential owners, operators, and specifiers of energy-reporting building systems should rigorously analyze the dependency of current and planned energy-data use cases on accuracy, noting in particular the dependence (or lack thereof) on relative vs. absolute accuracy, and on trueness vs. precision (i.e., repeatability), and should communicate use-case needs to industry standards and specification organizations.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
NASA NTRS2021

Computing Risk of Pyrotechnic Devices Using Lot Acceptance Testing

This paper presents an application of statistical engineering to solve the problem of determining the effects of reducing test sample sizes and environment levels in lot acceptance testing (LAT) of ordnance devices used by NASA and DoD space systems. Unlike environmental testing of dedicated qualification hardware, ordnance devices have a test-like-you-fly exception and use lot acceptance sampling or LAT. LAT is performed by randomly selecting a predefined number of devices from an individual lot and exposing them to a more severe dynamic shock and vibration testing environments than flight (sometimes as high as 6 decibels over flight environments) and then performing a destructive test on the device. Recent trends have been suggested to reduce LAT costs by reducing environment test levels or the number of devices per LAT, or both. A method is given here to compute flight risk, so the proposed methods can be compared by subject matter experts to the baseline LAT methods. In addition, this method can be used to determine the best methods to include in future LAT standards for pyrotechnic devices.

Computing Risk↗
DOE OSTI2026

Spatiotemporal Thermal Coupling in VO 2 Device Arrays

Correlated oxides such as VO 2 exhibit an electrically driven insulator–metal transition (IMT) that underlies their promise for neuromorphic and memory devices. Yet the IMT is not a uniform bulk process but a spatiotemporal phenomenon in which local heating nucleates filaments, contracts or dissolves them with the electric field, and couples to the environment. In this work, we directly image the VO 2 IMT dynamics by mid-wave infrared, thermography synchronized with electrical transport, resolving device temperature with micrometer spatial and microsecond temporal resolution. At the single-device level, we capture the full cycle of filament nucleation, contraction, and relaxation during current/voltage-driven resistive switching. At the array level, we show that heat propagates across etched gaps with an effective length scale of ∼131 µm, enabling cooperative behaviors among electrically isolated devices. Short-range distanced devices exhibit mutual filament attraction and sequential dissolution, while long-range distanced devices differentiate into distinct roles: drivers that initiate switching, cooperative responders that undergo assisted self-oscillations, and passive reporters that record the thermal field. Furthermore, these results reframe thermal crosstalk, long regarded as parasitic, as an intrinsic coupling channel and design principle for organizing collective switching behaviors, with direct implications for emergent circuit functionality in neuromorphic and unconventional computing architectures.

coupling↗
DOE OSTI2025

In-device Battery Failure Analysis

Lithium-ion batteries are indispensable power sources for a wide range of modern electronic devices. However, battery lifespan remains a critical limitation, directly affecting the sustainability and user experience. Conventional battery failure analysis in controlled lab settings may not capture the complex interactions and environmental factors encountered in real-world, in-device operating conditions. Here, this study analyzes the failure of commercial wireless earbud batteries as a model system within their intended usage context. Through multiscale and multimodal characterizations, the degradations from the material level to the device level are correlated, elucidating a failure pattern that is closely tied to the specific device configuration and operating conditions. The findings indicate that the ultimate failure mode is determined by the interplay of battery materials, cell structural design, and the in-device microenvironment, such as temperature gradients and their fluctuations. This holistic, in-device perspective on environmental influences provides critical insights for battery integration design, enhancing the reliability of modern electronics.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Accelerated development of CuSbS 2 thin film photovoltaic device prototypes

Development of alternative thin film photovoltaic technologies is an important research topic because of the potential of low-cost, high-efficiency solar cells to produce terawatt levels of clean power. However, this development of unexplored yet promising absorbers can be hindered by complications that arise during solar cell fabrication. Here, a high-throughput combinatorial method is applied to accelerate development of photovoltaic devices, in this case, using the novel CuSbS2 absorber via a newly developed three-stage self-regulated growth process to control absorber purity and orientation. Photovoltaic performance of the absorber, using the typical substrate CuInxGa1 - xSe2 (CIGS) device architecture, is explored as a function of absorber quality and thickness using a variety of back contacts. This study yields CuSbS2 device prototypes with ~1% conversion efficiency, suggesting that the optimal CuSbS2 device fabrication parameters and contact selection criteria are quite different than for CIGS, despite the similarity of these two absorbers. The CuSbS2 device efficiency is at present limited by low short-circuit current because of bulk recombination related to defects, and a small open-circuit voltage because of a theoretically predicted cliff-type conduction band offset between CuSbS2 and CdS. Overall, these results illustrate both the potential and limits of combinatorial methods to accelerate the development of thin film photovoltaic devices using novel absorbers.

14 SOLAR ENERGY↗
DOE OSTI2022

Growth Optimization and Device Integration of Narrow‐Bandgap Graphene Nanoribbons

Abstract The electronic, optical, and magnetic properties of graphene nanoribbons (GNRs) can be engineered by controlling their edge structure and width with atomic precision through bottom‐up fabrication based on molecular precursors. This approach offers a unique platform for all‐carbon electronic devices but requires careful optimization of the growth conditions to match structural requirements for successful device integration, with GNR length being the most critical parameter. In this work, the growth, characterization, and device integration of 5‐atom wide armchair GNRs (5‐AGNRs) are studied, which are expected to have an optimal bandgap as active material in switching devices. 5‐AGNRs are obtained via on‐surface synthesis under ultrahigh vacuum conditions from Br‐ and I‐substituted precursors. It is shown that the use of I‐substituted precursors and the optimization of the initial precursor coverage quintupled the average 5‐AGNR length. This significant length increase allowed the integration of 5‐AGNRs into devices and the realization of the first field‐effect transistor based on narrow bandgap AGNRs that shows switching behavior at room temperature. The study highlights that the optimized growth protocols can successfully bridge between the sub‐nanometer scale, where atomic precision is needed to control the electronic properties, and the scale of tens of nanometers relevant for successful device integration of GNRs.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Performance Assessment of Several Low-Cost Consumer-Grade Analog-to-Digital Conversion Devices

The Oak Ridge National Laboratory (ORNL) has pioneered an approach where low-cost consumer-grade electronics can be used as the basis of a highly reliable data acquisition architecture. One twenty-channel system based on this approach has been operating almost 4 years at ORNL. The architecture allows a mix-and-match level of configurability so the designer can select devices that best match the desired performance trade-offs. The most important device to be selected is the analog-to-digital converter. This paper explores the performance of several candidate audio recording devices that can be used as high-speed analog-to-digital converters for such measurement systems. Various performance metrics are explored including frequency response, noise floor, and synchronous sampling. Sample rates as high as 192 KHz are supported with 16 and 24-bit resolution. While most of the devices are dual-channel, there are multi-channel devices now available that will allow modal type of synchronous sampling. One such device was tested and is discussed is this paper.

Wetherington Jr, G↗
DOE OSTI2013

French Sizing of Medical Devices is not Fit for Purpose

PurposeThe purpose of the study is to quantify the variation in the metric equivalent of French size in a range of medical devices, from various manufacturers, used in interventional radiology.MethodsThe labelling of a range of catheters, introducers, drains, balloons, stents, and endografts was examined. Products were chosen to achieve a broad range of French sizes from several manufacturers. To assess manufacturing accuracy, eight devices were selected for measurement using a laser micrometer. The external diameters of three specimens of each device were measured at centimeter intervals along the length of the device to ensure uniformity.ResultsA total of 200 labels of interventional radiology equipment were scrutinized. The results demonstrate a wide variation in the metric equivalent of French sizing. Labelled products can vary in diameter across the product range by up to 0.79 mm.The devices selected for measurement with the non-contact laser micrometer demonstrate acceptable manufacturing consistency. The external diameter differed by 0.05 mm on average.ConclusionsOur results demonstrate wide variation in the interpretation of the French scale by different manufacturers of medical devices. This has the potential to lead to problems using coaxial systems especially when the products are from different manufacturers. It is recommended that standard labelling should be employed by all manufacturers conveying specific details of the equipment. Given the wide variation in the interpretation of the French scale, our opinion is that this scale either needs to be abandoned or be strictly defined and followed.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2018

MR Imaging of Patients with Cardiac Implantable Electronic Devices (CIEDs): Implementing a Program and Optimizing CMR

Purpose of review: How to implement a program for MRI in patients with conditional and non-conditional (“legacy”) CIED. How to optimize safety and image quality in CMR? What the radiologists need to know: device programming, pre- and post-MRI CIED parameters. Recent findings: New Center for Medicare and Medicaid Services (CMS) guidelines have opened MRI to many patients with nonconditional devices. Newer pulse sequences for cardiac MRI (CMR) in device patients, including modified cine, late gadolinium enhancement and T1 mapping sequences, have resulted in improved image quality in device patients. We present several cases of CMR in device patients, including imaging of leadless pacemakers subcutaneous ICDs. Imaging pitfalls/artifacts in CMR interpretation are also presented. Summary: An organized institutional workflow with an established protocol involving proper patient screening, device programming, scan monitoring, and pre- and post-ICD interrogation minimizes risk in patients with conditional and non-conditional CIEDs. Although rare, significant changes in lead performance, power-on/reset, inappropriate pacing or ICD discharges and battery voltage depletion should be documented. High-quality scans with accurate scar characterization in CIED patients require the use of wideband sequences. CMS has recently acknowledged MRI as a reasonable test necessary for the diagnosis and treatment of beneficiaries with implanted CIEDs, improving the financial prospects and encouraging future developments.

62 RADIOLOGY AND NUCLEAR MEDICINE↗
DOE OSTI2018

Persistent energy harvesting in the harsh desert environment using a thermal resonance device: Design, testing, and analysis

Thermal fluctuations in the environment are a ubiquitous, yet untapped energy source for harvesting. Our laboratory has introduced the concept of a thermal resonance device for this purpose, with potential to power wireless sensor networks (WSNs), devices embedded into structural elements, and electronics deployed in relatively inaccessible areas. This approach has particular advantages for the desert environment, where conventional energy harvesting devices are severely confounded by frequent sandstorms, extreme temperature and high solar fluence. Herein, we design, fabricate, and test a thermal resonator for the conversion of diurnal temperature fluctuations to electrical power in a harsh desert environment using a thermally conductive phase change composite as a high thermal effusivity material, specifically tuned to the temperature fluctuating environment of Thuwal, Saudi Arabia (22.3095°N, 39.1047°E). The composite consists of a highly porous and thermally conductive nickel foam impregnated with eicosane as a phase change material for enhanced thermal capacity. The high thermal effusivity material is incorporated into a rationally-designed thermal resonance device, which is tested for a period of two weeks in Saudi Arabia, extracting as high as 2 mW from approximately 10 °C diurnal temperature fluctuations. These experimental data provide a test of the theoretical model for the design and operation of the device. Overall, these results highlight the opportunity of employing thermal resonance devices for energy harvesting, particularly in the desert environment.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2019

Device-level plug load disaggregation in a zero energy office building and opportunities for energy savings

Along with heating, cooling, ventilation, and lighting, plug loads are one of the principal consumers of energy in commercial buildings. Managing ever-changing plug loads is a great challenge given the quantity and variety of devices in commercial buildings and the cost of monitoring equipment. To address this issue, we propose a method for developing a disaggregated model of an office building's plug loads that utilizes power data from a small portion of monitored devices and a device inventory. Using data from metering and control devices in the Research Support Facility at the National Renewable Energy Laboratory, we compared our model to the building's plug load submeters. We found that the model was effective in predicting the shape of the building's average plug loads; however, it did not account for the entire magnitude of the load. With the disaggregated breakdown, we identified devices that contributed significantly to the building's unoccupied load, such as the audio visual equipment as well as devices that contributed significantly at specific times of the day, such as the microwaves at noon. This disaggregated information enables building owners to make more informed decisions with respect to plug load controls and energy efficiency upgrades. Furthermore, we highlight how the plug loads in the Research Support Facility have changed over time and offer recommendations for implementing this disaggregation method in other buildings.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2022

Measuring the maximum capacity and thermal resistances in phase-change thermal storage devices

Thermal energy storage can increase the efficiency of the electric grid by adding flexibility to thermal systems. The value of thermal storage is a function of its energy and power density, which are driven by the capacity and thermal resistances in the storage device. Measuring these properties in-situ at the device level is an important step to understanding the performance and improving the design of thermal storage systems. Here, we present methods to measure the total capacity and thermal resistances in heat exchangers with integrated phase change materials. These methods are demonstrated on two thermal storage devices - a 570-kWh ice-based storage tank and a 0.35-kWh graphite-tetradecane composite device. The results show how thermal resistances evolve with the state of charge and discharge rate in these devices and quantify the impact of applied pressure on the contact resistance in composite phase change material heat exchangers. The proposed method allows for easy comparison between different systems and provides information on the thermal bottlenecks limiting performance. Ultimately, these measurements will allow designers to make robust, high-performance thermal storage devices for next-generation thermal systems.

25 ENERGY STORAGE↗
DOE OSTI2014

A light-modified ferroelectric resistive switching behavior in Ag/BaMoO{sub 4}/FTO device at ambient temperature

BaMoO{sub 4} powder was prepared by a facile hydrothermal synthesis. And the BaMoO{sub 4}/FTO device was fabricated by a spin-coated method, in which the thickness of BaMoO{sub 4} layer is about 20 µm. The bipolar resistive switching effect has been observed in Ag/BaMoO{sub 4}/FTO device. Moreover, the resistive switching effect of the device is greatly improved by white light irradiation. The resistive switching behavior is explained by the polarization reversal that changes the charge distribution and modulates the Schottky barriers. - Graphical abstract: We fabricate a resistive switching device based on Ag/BaMoO{sub 4}/FTO, the device shows superior white-light controlled bipolar resistive switching memristive characteristics. - Highlights: • The BaMoO{sub 4} nanosquares powder was prepared by a hydrothermal synthesis. • The resistive switching of the Ag/BaMoO{sub 4}/FTO device was observed for the first time. • It is shown that the resistive switching is greatly improved under the white light irradiation. • The mechanism of resistive switching is attributed to the ferroelectric polarization reversal.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2014

Quantum filter of spin polarized states: Metal–dielectric–ferromagnetic/semiconductor device

Highlights: • Development of a new spintronics device. • Development of quantum spin polarized filters. • Development of theory of quantum spin polarized filter. - Abstract: Recently we proposed a model for the Quantum Spin-Polarized State Filter (QSPSF). The magnetic moments are transported selectively in this model, detached from the electric charge carriers. Thus, transfer of a spin-polarized state between two conductors was predicted in a system of two levels coupled by exchange interaction. The strength of the exchange interaction between the two conductive layers depends on the thickness of the dielectric layer separating them. External magnetic fields modulate spin-polarized state transfer, due to Zeeman level shift. Therefore, a linearly growing magnetic field generates a series of current peaks in a nearby coil. Thus, our spin-state filter should contain as least three nanolayers: (1) conductive or ferromagnetic; (2) dielectric; and (3) conductive or semiconductive. The spectrum of spin-polarized states generated by the filter device consists of a series of resonance peaks. In a simple case the number of lines equals S, the total spin angular momentum of discrete states in one of the coupled nanolayers. Presently we report spin-polarized state transport in metal–dielectric–ferromagnetic (MDF) and metal–dielectric–semiconductor (MDS) three-layer sandwich devices. The exchange-resonance spectra in such devices are quite specific, differing also from spectra observed earlier in other three-layer devices. The theoretical model is used to interpret the available experimental results. A detailed ab initio analysis of the magnetic-field dependence of the output magnetic moment averaged over the surface of the device was carried out. The model predicts the resonance structure of the signal, although at its present accuracy it cannot predict the positions of the spectral peaks.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Enabling bifacial thin film devices by developing a back surface field using Cu x AlO y

Bifacial solar cells have the potential to increase the energy yield per unit area over traditional monofacial devices without significant added cost, driving $/kWh costs lower and accelerating the adoption of solar photovoltaics. However, the performance of bifacial thin film solar cells significantly lags that achieved by crystalline silicon cells. Here we incorporate wide bandgap Cu x AlO y as a back buffer layer for CdTe devices and achieve a backside illuminated device with high current density and high fill factor. Moreover, these values remain nearly constant even as the absorber layer thickness changes, indicating that a fully-depleted device is not required for efficient charge collection. We show that this response is indicative of a back surface field, albeit with a persistent high back surface recombination velocity. By managing electron reflection, we achieved a backside illumination conversion efficiency of 7.1% and bifaciality of 0.55 for a 3.3 µm CdTe device and 8.0% and 0.62 for a 2 µm device. Future improvements can be made by identifying and incorporating a passivation material that reduces the back surface recombination velocity.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Improved performance of a near-field thermophotovoltaic device by a back gapped reflector

Various spectral control techniques can be applied to improve the performance of a thermophotovoltaic (TPV) device. For example, a back surface reflector (BSR) is a common structure to improve the performance of TPV devices. A conventional metal BSR structure enhances the photogeneration rate by increasing the absorption probability of photons via back surface reflections, affording a second chance for absorption. However, the effects of surface passivation and external luminescence introduced by BSR structures have been previously ignored, which potentially decreases the performance of TPV devices. Recently, a back gapped reflector (BGR) structure was proposed to greatly improve the performance of far-field TPV devices by reducing imperfect reflections at the semiconductor-metal interface. In the present work, the performance improvement on a thin-film, near-field InAs TPV device with a BGR is investigated, comparing its performance to that with a conventional metal BSR. Surface passivation conditions are also investigated to further improve the performance of TPV devices with back reflectors. Further, the output power and efficiency are calculated using an iterative model combining fluctuational electrodynamics and the full drift diffusion model. For the well-passivated condition, when the BSR is replaced by the BGR, the calculated conversion efficiency of the near-field TPV was improved from 16.4% to 21% and the output power was increased by 10%. Finally, the absorption of the back reflectors and external luminescence loss are analyzed to explain the performance improvement.

external luminescence↗