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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 523 records · Page 29
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Ultrafast Dynamics of Excitonic Complexes in Electrolyte-Gated Monolayer MoS 2

Understanding and controlling ultrafast excitons and trion dynamics in monolayer transition metal dichalcogenides (TMDs) is critical for optoelectronic and photonic applications. These dynamics depend strongly on carrier density, but most studies use fluence-dependence to modulate electron-hole populations rather than direct electrostatic gating that is more relevant to optoelectronic devices. We utilize electrolyte gating to tune the ground-state carrier density of monolayer MoS 2 and probe excitonic dynamics using transient absorption spectroscopy, thereby modifying absorption through bandgap renormalization, screening, phase-space filling, and exciton-trion crossover. Spectral deconvolution reveals distinct but coupled exciton and trion dynamics. Excitons form independently of voltage but relax faster with increasing carrier density, consistent with Auger-like processes, while trions decay more rapidly through multiple channels. At higher voltages, trion relaxation shifts from a sub-picosecond cooling to slower trapping-assisted processes. Furthermore, our results provide missing insights into the interplay between excitons and trions in monolayer MoS 2 , relevant for TMD-based optoelectronics.

chalcogenides↗
DOE OSTI2022

Silicon Heterojunction Field Performance

The market share of silicon heterojunction (SHJ) modules are expected to increase in the following years. The presentation discusses field performance of SHJ and compares it to other high-efficiency modules. In-depth materials characterization is used to understand the origins of degradation in these type of modules.

ENGINEERING,SOLAR ENERGY↗
NASA NTRS2012

An MSK Radar Waveform

The minimum-shift-keying (MSK) radar waveform is formed by periodically extending a waveform that separately modulates the in-phase and quadrature- phase components of the carrier with offset pulse-shaped pseudo noise (PN) sequences. To generate this waveform, a pair of periodic PN sequences is each passed through a pulse-shaping filter with a half sinusoid impulse response. These shaped PN waveforms are then offset by half a chip time and are separately modulated on the in-phase and quadrature phase components of an RF carrier. This new radar waveform allows an increase in radar resolution without the need for additional spectrum. In addition, it provides self-interference suppression and configurable peak sidelobes. Compared strictly on the basis of the expressions for delay resolution, main-lobe bandwidth, effective Doppler bandwidth, and peak ambiguity sidelobe, it appears that bi-phase coded (BPC) outperforms the new MSK waveform. However, a radar waveform must meet certain constraints imposed by the transmission and reception of the modulation, as well as criteria dictated by the observation. In particular, the phase discontinuity of the BPC waveform presents a significant impediment to the achievement of finer resolutions in radar measurements a limitation that is overcome by using the continuous phase MSK waveform. The phase continuity, and the lower fractional out-of-band power of MSK, increases the allowable bandwidth compared with BPC, resulting in a factor of two increase in the range resolution of the radar. The MSK waveform also has been demonstrated to have an ambiguity sidelobe structure very similar to BPC, where the sidelobe levels can be decreased by increasing the length of the m-sequence used in its generation. This ability to set the peak sidelobe level is advantageous as it allows the system to be configured to a variety of targets, including those with a larger dynamic range. Other conventionally used waveforms that possess an even greater spectral efficiency than the MSK waveform, such as linear frequency modulation (LFM) and Costas frequency hopping, have a fixed peak sidelobe level that is therefore not configurable, and can be exceeded by high contrast targets. Furthermore, in the case of a multistatic experiment observing a target in motion, self-interference from the transmitter to the receiver is mitigated by the MSK waveform. Waveforms that have delay Doppler coupling, such as LFM, provide no such protection.

Quirk, Kevin J.↗
NASA NTRS1988

Digital carrier demodulation for the DSN Advanced Receiver

The digital in-phase and quadrature (I and Q) carrier demodulation for the Deep Space Network's (DSN) Advanced Receiver is described and analyzed. The system provides coherent demodulation for a variety of modulation formats including Binary Phase Shift Keying (BPSK), BPSK with a carrier residual, Quadrature Phase Shift Keying (QPSK), Offset-QPSK (OQPSK), and Minimum Shift Keying (MSK). The focus is on the theory and hardware design of the halfband filters which are the integral part of the demodulator. The underlying theory of the filters is summarized, a breadboard hardware design is described, and a VLSI implementation is proposed which significantly decreases the hardware. A second important problem analyzed is DC-offset in the demodulator. This is a serious problem which translates into bias error in the residual carrier phase detector. The dynamic range of the complex mixer is analyzed using a probabilistic approach. It is deduced that the resulting static phase error is less than 0.2 deg when the ratio of carrier power to noise power in the demodulator input bandwidth is -72 dB or higher. Thus, the static phase error is negligible at a carrier power to noise spectral density of 0 dB-Hz for a 15 MHz bandwidth demodulator.

Sadr, R.↗
DOE OSTI2023

Carrier Dynamics of Polar, Semipolar, and Nonpolar InGaN/GaN LEDs Measured by Small-Signal Electroluminescence

The carrier dynamics in InGaN/GaN LEDs are directly tied to their efficiency and maximum modulation speed, which are important metrics for solid-state lighting, displays, and optical communication. We measure the carrier dynamics of nonpolar, semipolar, and commercial c-plane InGaN/GaN LEDs using small-signal electroluminescence methods. Rate equations and a small-signal circuit are used to model the carrier dynamics. The model is fit to the optical frequency response and input impedance of the LEDs to extract the carrier lifetimes and the recombination rates. The results offer insight into the underlying causes of efficiency droop and the green gap, and inform device design strategies.

42 ENGINEERING↗
NASA NTRS2013

Sleuthing the MSL EDL Performance from an X Band Carrier Perspective

During the Entry, Descent, and Landing (EDL) of NASA's Mars Science Laboratory (MSL), or Curiosity, rover to Gale Crater on Mars on August 6, 2012 UTC, the rover transmitted an X-band signal composed of carrier and tone frequencies and a UHF signal modulated with an 8kbps data stream. During EDL, the spacecraft's orientation is determined by its guidance and mechanical subsystems to ensure that the vehicle land safely at its destination. Although orientation to maximize telecom performance is not possible, antennas are especially designed and mounted to provide the best possible line of sight to Earth and to the Mars orbiters supporting MSL's landing. The tones and data transmitted over these links are selected carefully to reflect the most essential parameters of the vehicle's state and the performance of the EDL subsystems for post-EDL reconstruction should no further data transmission from the vehicle be possible. This paper addresses the configuration of the X band receive system used at NASA / JPL's Deep Space Network (DSN) to capture the signal spectrum of MSL's X band carrier and tone signal, examines the MSL vehicle state information obtained from the X band carrier signal only and contrasts the Doppler-derived information against the post-EDL known vehicle state. The paper begins with a description of the MSL EDL sequence of events and discusses the impact of the EDL maneuvers such as guided entry, parachute deploy, and powered descent on the frequency observables expected at the DSN. The range of Doppler dynamics possible is derived from extensive 6 Degrees-Of-Freedom (6 DOF) vehicle state calculations performed by MSL's EDL simulation team. The configuration of the DSN's receive system, using the Radio Science Receivers (RSR) to perform open-loop recording for both for nominal and off-nominal EDL scenarios, is detailed. Expected signal carrier power-to-noise levels during EDL are shown and their impact on signal detection is considered. Particular attention is given to the selection of the appropriate RSR processing bandwidths and to its configuration for real-time signal detection. The X-band carrier frequency obtained through post-processing of the open-loop recorded spectrum is given. Detection of spacecraft status and completion of key vehicle events through their Doppler signature is discussed and illustrated. This Doppler-derived information is compared against the very accurate vehicle data obtained post-EDL via MSL's UHF radio subsystem. The paper concludes with a discussion on the advantages and disadvantages of transmitting the X-band carrier and tone signal in the general context of EDL communications and lessons learned for future missions with EDL sequences are given

Mars Science Laboratory (MSL)↗
DOE OSTI2024

Effective Modulation of Interlayer Excitons in WSe 2 /WS 2 Heterostructures by Plasmon–Exciton Interaction

Effective charge transfer and carrier separation at the interface are paramount for optimizing the performance of devices based on van der Waals heterostructures. In this investigation, surface plasmons generated by gold nanoparticles are employed to modulate the photocarrier dynamics in WSe 2 /WS 2 heterostructures. The results of pump-probe measurements reveal that the efficiency of carrier transfer across the WSe 2 /WS 2 heterostructure interface can be significantly enhanced via energy transfer mechanisms mediated by gold plasmons. Moreover, the electric field engendered by the plasmonic oscillations can modulate the dipole moment of the interlayer exciton. These well-aligned excitons avoid the annihilation and the extension of the lifetime of the excitons with increased pump power is realized by screening effect. The findings presented herein offer valuable insights for the active manipulation of charge transfer and extend our understanding of the integral role played by plasmon-exciton coupling in mediating charge separation in van der Waals heterostructures.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2011

Stability of two-dimensional ion-acoustic wave packets in quantum plasmas

The nonlinear propagation of two-dimensional (2D) quantum ion-acoustic waves (QIAWs) is studied in a quantum electron-ion plasma. By using a 2D quantum hydrodynamic model and the method of multiple scales, a new set of coupled nonlinear partial differential equations is derived which governs the slow modulation of the 2D QIAW packets. The oblique modulational instability (MI) is then studied by means of a corresponding nonlinear Schroedinger equation derived from the coupled nonlinear partial differential equations. It is shown that the quantum parameter H (ratio of the plasmon energy density to Fermi energy) shifts the MI domains around the k{theta} -plane, where k is the carrier wave number and {theta} is the angle of modulation. In particular, the ion-acoustic wave (IAW), previously known to be stable under parallel modulation in classical plasmas, is shown to be unstable in quantum plasmas. The growth rate of the MI is found to be quenched by the obliqueness of modulation. The modulation of 2D QIAW packets along the wave vector k is shown to be described by a set of Davey-Stewartson-like equations. The latter can be studied for the 2D wave collapse in dense plasmas. The predicted results, which could be important to look for stable wave propagation in laboratory experiments as well as in dense astrophysical plasmas, thus generalize the theory of MI of IAW propagations both in classical and quantum electron-ion plasmas.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2019

Active region of a functionally integrated laser – modulator

A method for the functional integration of injection lasers and modulators of generated light in a single heterostructure with spatially displaced quantum wells in the conduction and valence bands, formed by the second-type heterojunctions, is proposed. The structures and energy band diagrams of the active regions of functionally integrated lasers – modulators with amplitude and frequency modulation are considered. A physical – topological model and a technique for numerical simulation of lasers – modulators is proposed. It is shown that the maximum modulation frequencies for the proposed heterostructures, in contrast to the same frequencies implemented under pump current modulation, are not limited by the duration of transients in the laser power supply circuit and the carrier lifetime in the laser active region but are determined by the photon lifetime in the cavity. (paper)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2012

Electrical Bias as an Alternate Method for Reproducible Measurement of Copper Indium Gallium Diselenide (CIGS) Photovoltaic Modules: Preprint

Light-to-dark metastable changes in thin-film photovoltaic (PV) modules can introduce uncertainty when measuring module performance on indoor flash testing equipment. This study describes a method to stabilize module performance through forward-bias current injection rather than light exposure. Measurements of five pairs of thin-film copper indium gallium diselenide (CIGS) PV modules indicate that forward-bias exposure maintained the PV modules at a stable condition (within 1%) while the unbiased modules degraded in performance by up to 12%. It was additionally found that modules exposed to forward bias exhibited stable performance within about 3% of their long-term outdoor exposed performance. This carrier-injection method provides a way to reduce uncertainty arising from fast transients in thin-film module performance between the time a module is removed from light exposure and when it is measured indoors, effectively simulating continuous light exposure by injecting minority carriers that behave much as photocarriers do. This investigation also provides insight into the initial light-induced transients of thin-film modules upon outdoor deployment.

14 SOLAR ENERGY↗
DOE OSTI2018

Biosynthesis of t-Butyl in Apratoxin A: Functional Analysis and Architecture of a PKS Loading Module

The unusual feature of a t-butyl group is found in several marine-derived natural products including apratoxin A, a Sec61 inhibitor produced by the cyanobacterium Moorea bouillonii PNG 5-198. Here, we determine that the apratoxin A t-butyl group is formed as a pivaloyl acyl carrier protein (ACP) by AprA, the polyketide synthase (PKS) loading module of the apratoxin A biosynthetic pathway. AprA contains an inactive “pseudo” GCN5-related N-acetyltransferase domain (ΨGNAT) flanked by two methyltransferase domains (MT1 and MT2) that differ distinctly in sequence. Furthermore, structural, biochemical, and precursor incorporation studies reveal that MT2 catalyzes unusually coupled decarboxylation and methylation reactions to transform dimethylmalonyl-ACP, the product of MT1, to pivaloyl-ACP. Further, pivaloyl-ACP synthesis is primed by the fatty acid synthase malonyl acyltransferase (FabD), which compensates for the ΨGNAT and provides the initial acyl-transfer step to form AprA malonyl-ACP. Additionally, images of AprA from negative stain electron microscopy reveal multiple conformations that may facilitate the individual catalytic steps of the multienzyme module.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS2007

Noncoherent DTTLs for Symbol Synchronization

Noncoherent data-transition tracking loops (DTTLs) have been proposed for use as symbol synchronizers in digital communication receivers. [Communication- receiver subsystems that can perform their assigned functions in the absence of synchronization with the phases of their carrier signals ( carrier synchronization ) are denoted by the term noncoherent, while receiver subsystems that cannot function without carrier synchronization are said to be coherent. ] The proposal applies, more specifically, to receivers of binary phase-shift-keying (BPSK) signals generated by directly phase-modulating binary non-return-to-zero (NRZ) data streams onto carrier signals having known frequencies but unknown phases. The proposed noncoherent DTTLs would be modified versions of traditional DTTLs, which are coherent. The symbol-synchronization problem is essentially the problem of recovering symbol timing from a received signal. In the traditional, coherent approach to symbol synchronization, it is necessary to establish carrier synchronization in order to recover symbol timing. A traditional DTTL effects an iterative process in which it first generates an estimate of the carrier phase in the absence of symbol-synchronization information, then uses the carrier-phase estimate to obtain an estimate of the symbol-synchronization information, then feeds the symbol-synchronization estimate back to the carrier-phase-estimation subprocess. In a noncoherent symbol-synchronization process, there is no need for carrier synchronization and, hence, no need for iteration between carrier-synchronization and symbol- synchronization subprocesses. The proposed noncoherent symbolsynchronization process is justified theoretically by a mathematical derivation that starts from a maximum a posteriori (MAP) method of estimation of symbol timing utilized in traditional, coherent DTTLs. In that MAP method, one chooses the value of a variable of interest (in this case, the offset in the estimated symbol timing) that causes a likelihood function of symbol estimates over some number of symbol periods to assume a maximum value. In terms that are necessarily oversimplified to fit within the space available for this article, it can be said that the mathematical derivation involves a modified interpretation of the likelihood function that lends itself to noncoherent DTTLs. The proposal encompasses both linear and nonlinear noncoherent DTTLs. The performances of both have been computationally simulated; for comparison, the performances of linear and nonlinear coherent DTTLs have also been computationally simulated. The results of these simulations show that, among other things, the expected mean-square timing errors of coherent and noncoherent DTTLs are relatively insensitive to window width. The results also show that at high signal-to-noise ratios (SNRs), the performances of the noncoherent DTTLs approach those of their coherent counterparts at, while at low SNRs, the noncoherent DTTLs incur penalties of the order of 1.5 to 2 dB.

Simon, Marvin↗
DOE OSTI2025

Polaron Delocalization and Transport in Doped Graphene Nanoribbon Thin Films

Graphene nanoribbons (GNRs) are quantum-confined π-conjugated monolayer semiconductors with attractive properties for optoelectronic applications. However, the ground- and excited-state properties of charge carriers in GNRs are still poorly understood, particularly with regards to the coupling between charges and the GNR lattice and the degree to which this coupling impacts local and macroscopic charge transport. To address this issue, we systematically correlate carrier density-dependent charge transport with spectroscopic modulations in chemically doped thin films of armchair graphene nanoribbons (9-aGNRs). This study combines Fourier transform infrared (FTIR) and ultraviolet−visible−near-infrared (UV−vis−NIR) spectroscopy with both local and macroscopic conductivity measurements to arrive at a full and self-consistent picture of transport in doped GNR thin films. Using three different molecular p-type dopants (i.e., oxidants), we demonstrate that hole polarons are the dominant quasi-particle determining charge transport in GNRs and that the degree of polaron delocalization depends sensitively on the dopant and the hole density. For all three dopants, the local conductivity probed by microwave spectroscopy substantially exceeds the long-range conductivity obtained by four-point probe measurements. Interestingly, the dopant size substantially influences charge transport at high hole densities. We ascribe this effect to different propensities for forming bipolarons with lower mobilities than polarons. Comparison of GNR transport and spectral properties to other prototypical π-conjugated semiconductors (e.g., semiconducting polymers or carbon nanotubes) benchmark the charge transport properties of GNR thin films for optoelectronic devices and applications.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2017

Dual-gate operation and carrier transport in SiGe p–n junction nanowires

Here, we investigate carrier transport in silicon–germanium nanowires with an axial p–n junction doping profile by fabricating these wires into transistors that feature separate top gates over each doping segment. By independently biasing each gate, carrier concentrations in the n- and p-side of the wire can be modulated. For these devices, which were fabricated with nickel source–drain electrical contacts, holes are the dominant charge carrier, with more favorable hole injection occurring on the p-side contact. Channel current exhibits greater sensitivity to the n-side gate, and in the reverse biased source–drain configuration, current is limited by the nickel/n-side Schottky contact.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2026

Characterization of Electronic Stress-Induced Changes in Multilayer MoS 2

Transition metal dichalcogenides like molybdenum disulfide (MoS 2 ) are compelling for next-generation electronic devices. In this work, we investigate the impact of electronic stress on MoS 2 to illustrate that observational and phenomenological information on multiple devices can be useful to describe changes in the device, and caution against the rationalization of paltry results as representative or correlative to device behavior. Here, we stress MoS 2 by applying a sustained 20 V DC bias to study the material’s response. Post-stress electronic characterization revealed nonuniform shifts in current–voltage (I–V) behavior alongside microscale changes. Complementary mechanical, spectroscopic, and scanning microwave impedance measurements showed that stress-induced features locally modulate stiffness, surface potential, Raman intensity, and charge carrier density. We correlated I–V behavior with morphological features (wrinkles, tears, folds, height) and device-level geometry (MoS 2 overlap with electrodes, channel area, contact length) on 50 test structures across five chips to move beyond anecdotal conclusions. We found no universal correlations before DC stress. However, device-level geometry was correlated with I–V behavior after DC stress, suggesting that electrode contacts play a more dominant role than morphology in determining performance. Delamination and thinning induced by DC stress led to localized reductions in charge carrier density within the affected regions. Further, delamination and thinning appear to map to I–V device performance in a few samples, but the correlation is lost when a larger sample size is considered. This suggests significant sample-to-sample variability in surface electronic states of the test structures. We also discuss how environmental factors introduced during fabrication may contribute to the observed heterogeneous device response. Progress will require high-resolution, multimodal analysis across many samples constructed under controlled, clean conditions. By building data sets that capture variability, we can better identify the true drivers of performance.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Nanoarchitectonic Semiconductor–Bio Hybrid Systems with Enhanced Charge Transfer for Hydrogen Peroxide Production

Nanoarchitectonics offers a systematic approach to creating an artificial framework by integrating different multiscale components such as semiconductor lattices and biological substances. However, most nanoarchitectonic abiotic-biotic hybrid systems have intrinsic limitations in imparting nonequilibrium biological features into semiconductor lattices at the nanoscale. Here, in this study, we report a new nanoarchitectonic system integrating bismuth oxychloride (BiOCl) nanosheets with purple membrane (PM) patches. PM is an archaeal subcellular fraction capable of unidirectionally transferring photogenerated charge carriers to its surroundings at the nanoscale independent of archaeal metabolism and retaining this dynamic functionality after isolation from living archaea. Microscopy, spectroscopy, electrochemical, and synchrotron X-ray scattering analyses verify that the nanoarchitectonic hybridization between BiOCl and PM generates a vertical heterostructure, thereby enhancing photogenerated charge-carrier dynamics and enabling the associated photocatalytic capacity. The resulting PM-BiOCl hybrid nanosheets efficiently convert dioxygen into hydrogen peroxide through a two-electron and two-proton transfer process under ambient conditions while simultaneously converting ethylene glycol into value-added chemicals. This study presents a nanoarchitectonic approach that leverages the photogenerated charge-carrier dynamics of the archaeal subcellular fractions to modulate the optoelectronic and catalytic capacity limitations of semiconductors.

catalysis↗
DOE OSTI2017

Topological-insulator-based terahertz modulator

Three dimensional topological insulators, as a new phase of quantum matters, are characterized by an insulating gap in the bulk and a metallic state on the surface. Particularly, most of the topological insulators have narrow band gaps, and hence have promising applications in the area of terahertz optoelectronics. In this work, we experimentally demonstrate an electronically-tunable terahertz intensity modulator based on Bi 1:5 Sb 0:5 Te 1:8 Se 1:2 single crystal, one of the most insulating topological insulators. A relative frequency-independent modulation depth of ~62% over a wide frequency range from 0.3 to 1.4 THz has been achieved at room temperature, by applying a bias current of 100 mA. The modulation in the low current regime can be further enhanced at low temperature. We propose that the extraordinarily large modulation is a consequence of thermally-activated carrier absorption in the semiconducting bulk states. Our work provides a new application of topological insulators for terahertz technology.

47 OTHER INSTRUMENTATION↗