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At least 505 records · Page 28

Study of Interesting Solidification Phenomena on the Ground and in Space (MEPHISTO)

Real-time Seebeck voltage variations in a Sn-Bi melt during directional solidification in the MEPHISTO spaceflight experiment flown on the USMP-3 mission, can be correlated with well characterized thruster firings and an Orbiter Main System (OMS) burn. The Seebeck voltage measurement is related to the response of the instantaneous average melt composition at the melt-crystal interface. This allowed us to make a direct comparison of numerical simulations with the experimentally obtained Seebeck signals. Based on the results of preflight and real-time computations, several well-defined thruster firing events were programmed to occur at specific times during the experiment. In particular, we simulated the effects of the thruster firings on melt and crystal composition in a directionally solidifying Sn-Bi alloy. The relative accelerations produced by the firings were simulated by impulsive accelerations of the same magnitude, duration and orientation as the requested firings. A comparison of the simulation results with the Seebeck signal indicates that there is a good agreement between the two. This unique opportunity allows us, for the first time, to quantitatively characterize actual g-jitter effects on an actual crystal growth experiment and to properly calibrate our models of g-jitter effects on crystal growth.

Favier, J.-J.↗

Study of Interesting Solidification Phenomena on the Ground and in Space (MEPHISTO)

Real-time Seebeck voltage variations in a Sn-Bi melt during directional solidification in the MEPHISTO spaceflight experiment flown on the USMP-3 mission, have been correlated with well-characterized thruster firings and an Orbiter Main System (OMS) burn. The Seebeck voltage measurement is related to the response of the instantaneous average melt composition at the melt-crystal interface. This allowed us to make a direct comparison of numerical simulations with the experimentally obtained Seebeck signals. Based on the results of preflight and real-time computations, several well-defined thruster firing events were programmed to occur at specific times during the experiment. In particular, we simulated the effects of the thruster firings on melt and crystal composition in a directionally solidifying Sn-Bi alloy. The relative accelerations produced by the firings were simulated by impulsive accelerations of the same magnitude, duration and orientation as the requested firings. A comparison of the simulation results with the Seebeck signal indicates that there is a good agreement between the two. This unique opportunity allows us to make the first quantitative characterization of actual g-jitter effects on an actual crystal growth experiment and to calibrate our models of g-jitter effects on crystal growth.

Alexander, J. Iwan D.↗

Chemical Vapor-Deposited (CVD) Diamond Films for Electronic Applications

Diamond films have a variety of useful applications as electron emitters in devices such as magnetrons, electron multipliers, displays, and sensors. Secondary electron emission is the effect in which electrons are emitted from the near surface of a material because of energetic incident electrons. The total secondary yield coefficient, which is the ratio of the number of secondary electrons to the number of incident electrons, generally ranges from 2 to 4 for most materials used in such applications. It was discovered recently at the NASA Lewis Research Center that chemical vapor-deposited (CVD) diamond films have very high secondary electron yields, particularly when they are coated with thin layers of CsI. For CsI-coated diamond films, the total secondary yield coefficient can exceed 60. In addition, diamond films exhibit field emission at fields orders of magnitude lower than for existing state-of-the-art emitters. Present state-of-the-art microfabricated field emitters generally require applied fields above 5x10^7 V/cm. Research on field emission from CVD diamond and high-pressure, high-temperature diamond has shown that field emission can be obtained at fields as low as 2x10^4 V/cm. It has also been shown that thin layers of metals, such as gold, and of alkali halides, such as CsI, can significantly increase field emission and stability. Emitters with nanometer-scale lithography will be able to obtain high-current densities with voltages on the order of only 10 to 15 V.

Source record↗

UAV Inspection of Electrical Transmission Infrastructure with Path Conformance Autonomy and Lidar-Based Geofences NASA Report on UTM Reference Mission Flights at Southern Company Flights November 2016

Flights at low altitudes in close proximity to electrical transmission infrastructure present serious navigational challenges: GPS and radio communication quality is variable and yet tight position control is needed to measure defects while avoiding collisions with ground structures. To advance unmanned aerial vehicle (UAV) navigation technology while accomplishing a task with economic and societal benefit, a high voltage electrical infrastructure inspection reference mission was designed. An integrated air-ground platform was developed for this mission and tested in two days of experimental flights to determine whether navigational augmentation was needed to successfully conduct a controlled inspection experiment. The airborne component of the platform was a multirotor UAV built from commercial off-the-shelf hardware and software, and the ground component was a commercial laptop running open source software. A compact ultraviolet sensor mounted on the UAV can locate 'hot spots' (potential failure points in the electric grid), so long as the UAV flight path adequately samples the airspace near the power grid structures. To improve navigation, the platform was supplemented with two navigation technologies: lidar-to-polyhedron preflight processing for obstacle demarcation and inspection distance planning, and trajectory management software to enforce inspection standoff distance. Both navigation technologies were essential to obtaining useful results from the hot spot sensor in this obstacle-rich, low-altitude airspace. Because the electrical grid extends into crowded airspaces, the UAV position was tracked with NASA unmanned aerial system traffic management (UTM) technology. The following results were obtained: (1) Inspection of high-voltage electrical transmission infrastructure to locate 'hot spots' of ultraviolet emission requires navigation methods that are not broadly available and are not needed at higher altitude flights above ground structures. (2) The sensing capability of a novel airborne UV detector was verified with a standard ground-based instrument. Flights with this sensor showed that UAV measurement operations and recording methods are viable. With improved sensor range, UAVs equipped with compact UV sensors could serve as the detection elements in a self-diagnosing power grid. (3) Simplification of rich lidar maps to polyhedral obstacle maps reduces data volume by orders of magnitude, so that computation with the resultant maps in real time is possible. This enables real-time obstacle avoidance autonomy. Stable navigation may be feasible in the GPS-deprived environment near transmission lines by a UAV that senses ground structures and compares them to these simplified maps. (4) A new, formally verified path conformance software system that runs onboard a UAV was demonstrated in flight for the first time. It successfully maneuvered the aircraft after a sudden lateral perturbation that models a gust of wind, and processed lidar-derived polyhedral obstacle maps in real time. (5) Tracking of the UAV in the national airspace using the NASA UTM technology was a key safety component of this reference mission, since the flights were conducted beneath the landing approach to a heavily used runway. Comparison to autopilot tracking showed that UTM tracking accurately records the UAV position throughout the flight path.

Moore, Andrew J.↗

Radiometric and Radiation Response of Visible FPAs

The readout integrated circuit (ROIC) used in these devices was originally developed for use in space based infrared systems operating at deep cryogenic temperatures and was selected because of its proven tolerance to total ionizing radiation? The detectors are a 128 x 128 array of 60 pm x 60 pm pixel elements that have been anti-reflection (AR) coated to improve the response at very short wavelengths. These visible focal plane arrays were operated at -40 C (233 K). Two focal planes were characterized using cobalt-60 radiation to produce ionizing total dose damage in the VFPAs. Both operational and performance data were obtained as functions of total dose. The first device tested showed no appreciable change in responsivity or noise up to 300 krad(Si). However, at the next dose level of 600 krad(Si), the readout was non-operational due to failure in the digital circuitry. The second device was characterized to a total dose of 750 krad(Si) with no observed change in responsivity. An increase dark current was observed in both devices, and in the second device, the dark current caused an increase in noise at low irradiance at 400 krad(Si) and above. The increase in dark current was somewhat un-expected for visible PIN detectors. The median dark current increased more than two orders of magnitude at 300 krad(Si) for the first device and a factor of 350 at 750 krad(Si) for pixels near the edge for the second device. The dark current was found to be a strong function of detector bias, with pixels near the edge of the array showing a greater increase in dark current with bias than those near the center. Since the optical response was not a function of bias, it is hypothesized that the dark current is a surface effect and that the variation in dark current with location is due to a variation in pixel bias, caused by a voltage drop across the pixel common lead. As the total dose increased, the dark current and the voltage drop increased

Hubbs, John↗

Signal and Power Integrity Design Methodology for High-Performance Flight Computing Systems

Computing capabilities of space systems have in-creased onboard performance by orders of magnitude with the use of radiation-tolerant field-programmable gate arrays (FPGA)and processors. The incorporation of signal and power integrity analysis with printed circuit board (PCB) design in reliable computing architectures for space systems has become critical to enable future mission capabilities. Developers launch high-performance processors into a breadth of orbits and missions, running varying applications that create challenges for designing reliable computing hardware. Specifically, for these designs, academic and industry research has focused on component radiation performance, fault mitigation, and reliable architectures. How-ever, other design parameters including electromagnetic interference (EMI), PCB stackup, signal integrity (SI), voltage regulator module (VRM) design, and power distribution network (PDN)are often deprioritized or disregarded as the design matures. Since these characteristics are becoming more significant in high-performance processor designs, this research presents a hardware design and analysis methodology for high-performance, space-computing systems that focuses on a holistic design approach and PDN reliability. While these challenges exist across all space hardware, the reduced PCB dimensions imposed by SmallSats and CubeSats introduce additional hurdles, specifically to VRM and decoupling design. By examining the relationship between the PDN and radiation performance, an analytical relationship is developed that incorporates Total Ionizing Dose and Single-Event Transients to ensure reliability throughout the mission duration. The presented design methodology is applied to the SpaceCube v3.0 Mini, an FPGA-based on-board science data processing system developed at NASA Goddard Space Flight Center.

Advanced avionics↗

Solar cell arcing: The role of outgassing and contamination

The effect of outgassing, venting, and thruster firing events on spacecraft system performance has been a long standing issue. Recent laboratory measurements on negatively biased high voltage solar cells at Physical Sciences Inc. (PSI) suggest that some currently designed and certainly future space power systems must address/re-evaluate this issue. Our observations show that exposing these cells to moderate levels (10 exp -3 torr-min) of H2O vapor enhances the arcing frequency, while heating to 85 C to remove water vapor significantly reduces the arc frequency. The interaction of the adhesive used to attach the cover glass to the solar cell with ambient water vapor is the key factor in determining arcing rates. Elimination of adhesive exposed to the environmental plasma reduces the arc frequency more than two orders of magnitude, and eliminates any sensitivity to H2O exposure. The adhesive may also become a source of spacecraft contamination. Macroscopic amounts were observed to blow off some arc events, and (we assume) electrostatically precipitate at other negatively biased locations. Data, analysis, and potential impact for future space platforms are discussed.

Marinelli, W. J.↗

Selection of LCTV operating curves for input and filter

A liquid crystal television (LCTV) SLM's phase, amplitude, and polarization all influence our selection of operating curves for input and filter. With its continuum of drive voltage, the LCTV permits grey-level control in both locations. Selection of an optimum curve depends on expected variations in signal amplitude, presence of input scene structured noise, and other factors. Using modulators obtained from a commercially available projection LCTV, and with no specifically added input noise present, we have obtained laboratory results in which the ratio of peak intensity to correlator system noise exceeded 100:1. Unfortunately, it was massively inefficient to implement the algorithm which had been developed as the abstract for this paper was submitted. Fortunately, we have quite recently developed two insights that will speed it by several orders of magnitude, and we shall report that result in the future. We will also extend the work to include clutter objects and additive input scene noise.

Juday, Richard D.↗

An acoustic charge transport imager for high definition television applications

The primary goal of this research is to develop a solid-state television (HDTV) imager chip operating at a frame rate of about 170 frames/sec at 2 Megapixels/frame. This imager will offer an order of magnitude improvements in speed over CCD designs and will allow for monolithic imagers operating from the IR to UV. The technical approach of the project focuses on the development of the three basic components of the imager and their subsequent integration. The camera chip can be divided into three distinct functions: (1) image capture via an array of avalanche photodiodes (APD's); (2) charge collection, storage, and overflow control via a charge transfer transistor device (CTD); and (3) charge readout via an array of acoustic charge transport (ACT) channels. The use of APD's allows for front end gain at low noise and low operating voltages while the ACT readout enables concomitant high speed and high charge transfer efficiency. Currently work is progressing towards the optimization of each of these component devices. In addition to the development of each of the three distinct components, work towards their integration and manufacturability is also progressing. The component designs are considered not only to meet individual specifications but to provide overall system level performance suitable for HDTV operation upon integration. The ultimate manufacturability and reliability of the chip constrains the design as well. The progress made during this period is described in detail.

Hunt, W. D.↗

An acoustic charge transport imager for high definition television applications

The primary goal of this research is to develop a solid-state high definition television (HDTV) imager chip operating at a frame rate of about 170 frames/sec at 2 Megapixels per frame. This imager offers an order of magnitude improvement in speed over CCD designs and will allow for monolithic imagers operating from the IR to the UV. The technical approach of the project focuses on the development of the three basic components of the imager and their integration. The imager chip can be divided into three distinct components: (1) image capture via an array of avalanche photodiodes (APD's), (2) charge collection, storage and overflow control via a charge transfer transistor device (CTD), and (3) charge readout via an array of acoustic charge transport (ACT) channels. The use of APD's allows for front end gain at low noise and low operating voltages while the ACT readout enables concomitant high speed and high charge transfer efficiency. Currently work is progressing towards the development of manufacturable designs for each of these component devices. In addition to the development of each of the three distinct components, work towards their integration is also progressing. The component designs are considered not only to meet individual specifications but to provide overall system level performance suitable for HDTV operation upon integration. The ultimate manufacturability and reliability of the chip constrains the design as well. The progress made during this period is described in detail in Sections 2-4.

Hunt, W. D.↗

The Concept of Negative Capacitance in Ionically Conductive Van der Waals Ferroelectrics

Negative capacitance (NC) provides a path to overcome the Boltzmann limit that dictates operating voltages in transistors and, therefore, may open up a path to the challenging proposition of lowering energy consumption and waste heat in nanoelectronic integrated circuits. Typically, NC effects in ferroelectric materials are based on either stabilizing a zero-polarization state or slowing down ferroelectric switching in order to access NC regimes of the free-energy distribution. Here, a fundamentally different mechanism for NC, based on CuInP 2 S 6 , a van der Waals layered ferrielectric, is demonstrated. Using density functional theory and piezo-response force microscopy, it is shown that an unusual combination of high Cu-ion mobility and its crucial role in determining polarization magnitude and orientation (P) leads to a negative slope of the polarization versus the electric field E, dP/dE < 0, which is a requirement for NC. This mechanism for NC is likely to occur in a wide class of materials, offering new possibilities for NC-based devices. Finally, the nanoscale demonstration of this mechanism can be extended to the device-level by increasing the regions of homogeneous polarization and polarization switching, for example, through strain engineering and carefully selected electric field pulses.

36 MATERIALS SCIENCE↗

Imaging hole-density inhomogeneity in arsenic-doped CdTe thin films by scanning capacitance microscopy

We report nanometer-scale hole-density imaging in As-doped CdTe films by scanning capacitance microscopy (SCM). The hole-density profiling is validated by contrasting a CdTe cross-section sample made by molecular-beam epitaxy with systematically increased As doping in a staircase pattern over the range of 10 15 -10 18 /cm 3 within a single film. In polycrystalline films, the carrier distribution is significantly nonuniform, with inhomogeneity ranging from several hundred nm to several um and hole density varying by one order of magnitude (low 10^16 to low 10 17 /cm 3 ). This nonuniformity is distributed randomly, independent of the grain structure and grain boundaries (GBs). Kelvin probe force microscopy (KPFM) maps the surface potential and is correlated to cathodoluminescence (CL) and SCM by imaging over identical areas. Higher potential and lower CL intensity are found on GBs but not by SCM contrast; this indicates positive GB charging and recombination, but not GB-specific hole-density changes. The overall KPFM potential image is in rough agreement with the SCM carrier distribution and indicates band-edge potential fluctuations. Nonuniform carrier concentration, potential fluctuations, and defect recombination can all cause voltage and performance loss in As-doped CdTe solar technology.

14 SOLAR ENERGY↗

Photoconductivity of high voltage space insulating materials: Measurements with metal electrodes

The electrical conductivities of high voltage insulating materials were measured in the dark and under various intensities of illumination. The materials investigated included FEP Teflon, Kapton-H, fused quartz, and parylene. Conductivities were determined as functions of temperature between 22 and 100 C and light intensity between 0 and 2.5 kW/m2. The thickness dependence of the conductivity was determined for Teflon and Kapton, and the influence of spectral wavelengths on the conductivity was determined in several cases. All measurements were made in a vacuum to simulate a space environment, and all samples had metallic electrodes. The conductivity of Kapton was permanently increased by exposure to light; changes as great as five orders of magnitude were observed after six hours of illumination.

Coffey, H. T.↗

Significant reduction in arc frequency biased solar cells: Observations, diagnostics, and mitigation technique(s)

A variety of experiments were performed which identify key factors contributing to the arcing of negatively biased high voltage solar cells. These efforts have led to reduction of greater than a factor of 100 in the arc frequency of a single cell following proper remediation procedures. Experiments naturally lead to and focussed on the adhesive/encapsulant that is used to bond the protective cover slip to the solar cell. An image-intensified charge coupled device (CCD) camera system recorded UV emission from arc events which occurred exclusively along the interfacial edge between the cover slip and the solar cell. Microscopic inspection of this interfacial region showed a bead of encapsulant along this entire edge. Elimination of this encapsulant bead reduced the arc frequency by two orders of magnitude. Water contamination was also identified as a key contributor which enhances arcing of the encapsulant bead along the solar cell edge. Spectrally resolved measurements of the observable UV light shows a feature assignable to OH(A-X) electronic emission, which is common for water contaminated discharges. Experiments in which the solar cell temperature was raised to 85 C showed a reduced arcing frequency, suggesting desorption of H2O. Exposing the solar cell to water vapor was shown to increase the arcing frequency. Clean dry gases such as O2, N2, and Ar show no enhancement of the arcing rate. Elimination of the exposed encapsulant eliminates any measurable sensitivity to H2O vapor.

Upschulte, B. L.↗

Cryogenic Quenching Process for Electronic Part Screening

The use of electronic parts at cryogenic temperatures (less than 100 C) for extreme environments is not well controlled or developed from a product quality and reliability point of view. This is in contrast to the very rigorous and well-documented procedures to qualify electronic parts for mission use in the 55 to 125 C temperature range. A similarly rigorous methodology for screening and evaluating electronic parts needs to be developed so that mission planners can expect the same level of high reliability performance for parts operated at cryogenic temperatures. A formal methodology for screening and qualifying electronic parts at cryogenic temperatures has been proposed. The methodology focuses on the base physics of failure of the devices at cryogenic temperatures. All electronic part reliability is based on the bathtub curve, high amounts of initial failures (infant mortals), a long period of normal use (random failures), and then an increasing number of failures (end of life). Unique to this is the development of custom screening procedures to eliminate early failures at cold temperatures. The ability to screen out defects will specifically impact reliability at cold temperatures. Cryogenic reliability is limited by electron trap creation in the oxide and defect sites at conductor interfaces. Non-uniform conduction processes due to process marginalities will be magnified at cryogenic temperatures. Carrier mobilities change by orders of magnitude at cryogenic temperatures, significantly enhancing the effects of electric field. Marginal contacts, impurities in oxides, and defects in conductor/conductor interfaces can all be magnified at low temperatures. The novelty is the use of an ultra-low temperature, short-duration quenching process for defect screening. The quenching process is designed to identify those defects that will precisely (and negatively) affect long-term, cryogenic part operation. This quenching process occurs at a temperature that is at least 25 C colder than the coldest expected operating temperature. This quenching process is the opposite of the standard burn-in procedure. Normal burn-in raises the temperature (and voltage) to activate quickly any possible manufacturing defects remaining in the device that were not already rejected at a functional test step. The proposed inverse burn-in or quenching process is custom-tailored to the electronic device being used. The doping profiles, materials, minimum dimensions, interfaces, and thermal expansion coefficients are all taken into account in determining the ramp rate, dwell time, and temperature.

Sheldon, Douglas J.↗

Ka-band linearizer for the Ultra-Compact X-ray free-electron laser at UCLA

There is a strong demand for accelerating structures able to achieve higher gradients and more compact dimensions for the next generation of linear accelerators for research, industrial and medical applications. Notably innovative technologies will permit compact and affordable advanced accelerators as the linear collider and X-ray free-electron lasers (XFELs) with accelerating gradients over twice the value achieved with current technologies. In particular XFELs are able to produce coherent X-ray pulses with peak brightness 10 orders of magnitude greater than preceding approaches, which has revolutionized numerous research fields through imaging of the nanoscopic world at the time and length scale of atom-based systems, that is of femtosecond and Angstrom. There is a strong interest for combining these two fields, to form a proper tool with the goal of producing a very compact XFEL in order to investigate multi-disciplinary topics in chemistry, biology, materials science, medicine and physics. In the framework of the Ultra-Compact XFEL project under study at the University of California, Los Angeles, a high gradient radio-frequency accelerating structure for the longitudinal phase-space linearization with an integrated voltage of at least 15 MV working on 6th harmonic of the main Linac frequency is required. We here present the electromagnetic design of a cryogenic normal-conducting 8 cm long Ka-band standing-wave linearizer working on π mode with a target accelerating gradient beyond 100 MV/m. The studies have been performed analytically and numerically to investigate the beam dynamics and electromagnetic issues.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Degradation Dynamics of Perovskite Solar Cells Under Fixed Reverse-Current Injection

Previous studies of reverse-bias stability in perovskite solar cells have focused primarily on voltage-controlled tests. Here we instead investigate perovskite solar cell degradation under well-defined, constant reverse-current stress. We show that the choice of hole-transport layer dictates the dominant degradation pathway: cells using thick poly(triphenylamine) (PTAA) layers can tolerate high reverse bias but quickly undergo catastrophic breakdown under fixed reverse current near their one-sun maximum power-point. In contrast, cells modified with phosphonic-acid interface layer MeO-2PACz, with poorer indium-doped tin oxide (ITO) coverage compared to PTAA, exhibit gradual and recoverable degradation under certain stress and recovery conditions. For MeO-2PACz devices, degradation increases with both current magnitude and duration. Importantly, when normalized by injected charge (current times duration), lower currents applied over longer times cause more degradation than higher currents over shorter periods. Here, combining electrical measurements with spatially resolved photoluminescence imaging, our observations support an ion- and charge-mediated interfacial electrochemical degradation mode.

Degradation↗

A heat flux sensor leveraging the transverse Seebeck effect in elemental antimony

Certain configurations of anisotropic single crystal materials can generate a thermoelectric voltage orthogonal to an induced temperature gradient. This phenomenon is known as the Transverse Seebeck Effect (TSE) and can be leveraged to fabricate simple and robust heat flux sensors. Only a small number of materials have been considered as TSE-based transducers and, among these, few have been developed into sensors with ruggedization against chemical and mechanical degradation. Here, we report on the fabrication and characterization of a rugged TSE-based heat flux sensor using prismatic antimony single crystals. The heat flux sensor was tested under static and dynamic heating scenarios. The sensor has a linear responsivity of 16.8 µV/(W/cm2) to heat fluxes spanning more than two orders of magnitude and a time constant of 4.4 s. The sensor’s response to localized heating, probed with a laser scanning technique, validated that the transduction mechanism is primarily the TSE by ruling out a sizable contribution from the conventional Seebeck effect. Finite element analysis corroborated that components used in the sensor package are the primary determinants of the time constant and the decrement of the responsivity from its theoretical maximum. Design principles that may be applied to elicit a faster transient response or higher responsivity are proposed. Furthermore, the results establish single crystal antimony as a promising transducer material for heat flux measurement systems and demonstrate potential effects of ruggedization on sensor performance.

36 MATERIALS SCIENCE↗