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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 505 records · Page 28
All sourcesNASA NTRSDOE OSTI
NASA NTRS1994

Theoretical Investigation of Wave-Vector-Dependent Analytical and Numerical Formulations of the Interband Impact-Ionization Transition Rate for Electron in Bulk Silicon and GaAs

The electron interband impact-ionization rate for both silicon and gallium arsenide is calculated using an ensemble Monte Carlo simulation with the expressed purpose of comparing different formulations of the interband ionization transition rate. Specifically, three different treatments of the transition rate are examined: the traditional Keldysh formula, a new k-dependent analytical formulation first derived by W. Quade, E Scholl, and M. Rudan, and a more exact, numerical method of Y. Wang and K. F. Brennan. Although the completely numerical formulation contains no adjustable parameters and as such provides a very reliable result, it is highly computationally intensive. Alternatively, the Keldysh formula, although inherently simple and computationally efficient, fails to include the k dependence as well as the details of the energy band structure. The k-dependent analytical formulation of Quade and co-workers overcomes the limitations of both of these models but at the expense of some new parameterization. It is found that the k-dependent analytical method of Quade and co-workers produces very similar results to those obtained with (he completely numerical model for some quantities. Specifically, both models predict that the effective threshold for impact ionization in GaAs and silicon is quite soft, that the majority of ionization events originate from the second conduction band in both materials, and that the transition rate is k dependent. Therefore, it is concluded that the k-dependent analytical model can qualitatively reproduce results similar to those obtained with the numerical model yet with far greater computational efficiency. Nevertheless, there exist some important drawbacks to the k-dependent analytical model of Quade and co-workers: These are that it does not accurately reproduce the quantum yield data for bulk silicon, it requires determination of a new parameter, related physically to (he overlap integrals of the Bloch state which can only be adjusted by comparison to experiment, and fails to account for any wave-vector dependence of the overlap integrals. As such [he transition rate may be overestimated at those points for which "near vertical," small change in k, transitions occur.

Kolnik, Jan↗
NASA NTRS1994

InGaAs PV Device Development for TPV Power Systems

lndium Gallium Arsenide (InGaAs) photovoltaic devices have been fabricated with bandgaps ranging from 0.75 eV to 0.60 eV on Indium Phosphide (InP) substrates. Reported efficiencies have been as high as 11.2% (AMO) for the lattice matched 0.75 eV devices. The 0.75 eV cell demonstrated 14.8% efficiency under a 1500 K blackbody with a projected efficiency of 29.3%. The lattice mismatched devices (0.66 and 0.60 eV) demonstrated measured efficiencies of 8% and 6% respectively under similar conditions. Low long wavelength response and high dark currents are responsible for the poor performance of the mismatched devices. Temperature coefficients have been measured and are presented for all of the bandgaps tested.

Wilt, David M.↗
NASA NTRS1995

Review of Recent Thermophotovoltaic (TPV) Research at Lewis Research Center

Thermophotovoltaic (TPV) research at NASA Lewis Research Center that began in the late 1980's is reviewed. This work has been concentrated on low bandgap indium gallium arsenide (InGaAs) PV calls and rare earth - yttrium aluminum garnet (YAG) thin film selective emitters, as well as, TPV system studies. An emittance theory has been developed for the thin film emitters. Experimental spectral emittance results for erbium Er-YAG and holmium Ho-YAG show excellent emittance (greater than or equal to 0.7) within the emission bands. The 0.75 eV InGaAs PV cells fabricated at Lewis have excellent quantum efficiency. An efficiency of 130% has been measured for this cell coupled to an Er-YAG selective emitter and a short pass IR filter.

Chubb, Donald L.↗
NASA NTRS1997

Interface Shape and Growth Rate Analysis of Se/GaAs Bulk Crystals Grown in the NASA Crystal Growth Furnace (CGF)

Selenium-doped gallium arsenide, Se/GaAs, bulk crystals have been grown on earth using NASA's crystal growth furnace (CGF) in preparation for microgravity experimentation on the USML-2 spacelab mission. Peltier cooling pulses of 50 ms duration, 2040 A magnitude, and 0.0033 Hz frequency were used to successfully demark the melt-solid interface at known times during the crystal growth process. Post-growth characterization included interface shape measurement, growth rate calculation, and growth rate transient determinations. It was found that the interface shapes were always slightly concave into the solid. The curvature of the seeding interfaces was typically 1.5 mm for the 15 mm diameter samples. This was in agreement with the predicted interface shapes and positions relative to the furnace determined using a numerical model of the sample/ampoule/cartridge assembly (SACA).

Bly, J. M.↗
NASA NTRS2000

Effects of Hydrogen on Tantalum Nitride Resistors

In this paper we report on observations of degradation of thin film Tantalum Nitride chip resistors in a hermetically sealed hybrid. The observations have been attributed to the reaction of residual Palladium with desorbed Hydrogen on the surface of the resistor film. Hydrogen gas has been observed to desorb from various sources within the sealed hybrid as a result of temperature elevation. The hydrogen gas has been reported to undergo a reaction with elements such as Platinum and Palladium causing device degradation in Gallium Arsenide Field Effect Transistors. The experimental procedures and data relating to this observation along with a discussion of available risk mitigation techniques will be presented.

Weiler, James↗
NASA NTRS2000

Earth Observing System (EOS) Terra Spacecraft 120 Volt Power Subsystem: Requirements, Development and Implementation

Built by the Lockheed-Martin Corporation, the Earth Observing System (EOS) TERRA spacecraft represents the first orbiting application of a 120 Vdc high voltage spacecraft electrical power system implemented by the National Aeronautics and Space Administration (NASA) Goddard Space Flight Center (GSFC). The EOS TERRA spacecraft's launch provided a major contribution to the NASA Mission to Planet Earth program while incorporating many state of the art electrical power system technologies to achieve its mission goals. The EOS TERRA spacecraft was designed around five state-of-the-art scientific instrument packages designed to monitor key parameters associated with the earth's climate. The development focus of the TERRA electrical power system (EPS) resulted from a need for high power distribution to the EOS TERRA spacecraft subsystems and instruments and minimizing mass and parasitic losses. Also important as a design goal of the EPS was maintaining tight regulation on voltage and achieving low conducted bus noise characteristics. This paper outlines the major requirements for the EPS as well as the resulting hardware implementation approach adopted to meet the demands of the EOS TERRA low earth orbit mission. The selected orbit, based on scientific needs, to achieve the EOS TERRA mission goals is a sun-synchronous circular 98.2degree inclination Low Earth Orbit (LEO) with a near circular average altitude of 705 kilometers. The nominal spacecraft orbit is approximately 99 minutes with an average eclipse period of about 34 minutes. The scientific goal of the selected orbit is to maintain a repeated 10:30 a.m. +/- 15 minute descending equatorial crossing which provides a fairly clear view of the earth's surface and relatively low cloud interference for the instrument observation measurements. The major EOS TERRA EPS design requirements are single fault tolerant, average orbit power delivery of 2, 530 watts with a defined minimum lifetime of five years (EOL). To meet these mission requirements, while minimizing mass and parasitic power losses, the EOS TERRA project relies on 36, 096 high efficiency Gallium Arsenide (GaAs) on Germanium solar cells adhered to a deployable flexible solar array designed to provide over 5,000 watts of power at EOL. To meet the eclipse power demands of the spacecraft, EOS TERRA selected an application of two 54-cell series connected Individual Pressure Vessel (IPV) Nickel-Hydrogen (NiH2) 50 Ampere-Hour batteries. All of the spacecraft observatory electrical power is controlled via the TERRA Power Distribution Unit (PDU) which is designed to provide main bus regulation of 120 Vdc +/- -4% at all load interfaces through the implementation of majority voter control of both the spacecraft's solar array sequential shunt unit (SSU) and the two battery bi-directional charge and discharge regulators. This paper will review the major electrical power system requirement drivers for the EOS TERRA mission as well as some of the challenges encountered during the development, testing, and implementation of the power system. In addition, spacecraft test and early on orbit performance results will also be covered.

Keys, Denney J.↗
NASA NTRS2001

Fabrication of Very High Efficiency 5.8 GHz Power Amplifiers using AlGaN HFETs on SiC Substrates for Wireless Power Transmission

For wireless power transmission using microwave energy, very efficient conversion of the DC power into microwave power is extremely important. Class E amplifiers have the attractive feature that they can, in theory, be 100% efficient at converting, DC power to RF power. Aluminum gallium nitride (AlGaN) semiconductor material has many advantageous properties, relative to silicon (Si), gallium arsenide (GaAs), and silicon carbide (SiC), such as a much larger bandgap, and the ability to form AlGaN/GaN heterojunctions. The large bandgap of AlGaN also allows for device operation at higher temperatures than could be tolerated by a smaller bandgap transistor. This could reduce the cooling requirements. While it is unlikely that the AlGaN transistors in a 5.8 GHz class E amplifier can operate efficiently at temperatures in excess of 300 or 400 C, AlGaN based amplifiers could operate at temperatures that are higher than a GaAs or Si based amplifier could tolerate. Under this program, AlGaN microwave power HFETs have been fabricated and characterized. Hybrid class E amplifiers were designed and modeled. Unfortunately, within the time frame of this program, good quality HFETs were not available from either the RSC laboratories or commercially, and so the class E amplifiers were not constructed.

Sullivan, Gerry↗
NASA NTRS1994

Cell Libraries

A NASA contract led to the development of faster and more energy efficient semiconductor materials for digital integrated circuits. Gallium arsenide (GaAs) conducts electrons 4-6 times faster than silicon and uses less power at frequencies above 100-150 megahertz. However, the material is expensive, brittle, fragile and has lacked computer automated engineering tools to solve this problem. Systems & Processes Engineering Corporation (SPEC) developed a series of GaAs cell libraries for cell layout, design rule checking, logic synthesis, placement and routing, simulation and chip assembly. The system is marketed by Compare Design Automation.

Source record↗
NASA NTRS1991

Small Business Innovations (Photodetector)

Epitaxx, Inc. of Princeton, NJ, developed the Epitaxx Near Infrared Room Temperature Indium-Gallium-Arsenide (InGaAs) Photodetector based on their Goddard Space Flight Center Small Business Innovation Research (SBIR) contract work to develop a linear detector array for satellite imaging applications using InGaAs alloys that didn't need to be cooled to (difficult and expensive) cryogenic temperatures. The photodetectors can be used for remote sensing, fiber optic and laser position-sensing applications.

Source record↗
NASA NTRS2002

CIGS2 Thin-Film Solar Cells on Flexible Foils for Space Power

CuIn(1-x)Ga(x)S2 (CIGS2) thin-film solar cells are of interest for space power applications because of the near optimum bandgap for AM0 solar radiation in space. CIGS2 thin film solar cells on flexible stainless steel (SS) may be able to increase the specific power by an order of magnitude from the current level of 65 Wkg(sup -1). CIGS solar cells are superior to the conventional silicon and gallium arsenide solar cells in the space radiation environment. This paper presents research efforts for the development of CIGS2 thin-film solar cells on 127 micrometers and 20 micrometers thick, bright-annealed flexible SS foil for space power. A large-area, dual-chamber, inline thin film deposition system has been fabricated. The system is expected to provide thickness uniformity of plus or minus 2% over the central 5" width and plus or minus 3% over the central 6" width. During the next phase, facilities for processing larger cells will be acquired for selenization and sulfurization of metallic precursors and for heterojunction CdS layer deposition both on large area. Small area CIGS2 thin film solar cells are being prepared routinely. Cu-rich Cu-Ga/In layers were sputter-deposited on unheated Mo-coated SS foils from CuGa (22%) and In targets. Well-adherent, large-grain Cu-rich CIGS2 films were obtained by sulfurization in a Ar: H2S 1:0.04 mixture and argon flow rate of 650 sccm, at the maximum temperature of 475 C for 60 minutes with intermediate 30 minutes annealing step at 120 C. Samples were annealed at 500 C for 10 minutes without H2S gas flow. The intermediate 30 minutes annealing step at 120 C was changed to 135 C. p-type CIGS2 thin films were obtained by etching the Cu-rich layer segregated at the surface using dilute KCN solution. Solar cells were completed by deposition of CdS heterojunction partner layer by chemical bath deposition, transparent-conducting ZnO/ZnO: Al window bilayer by RF sputtering, and vacuum deposition of Ni/Al contact fingers through metal mask. PV parameters of a CIGS2 solar cell on 127 micrometers thick SS flexible foil measured under AM 0 conditions at NASA GRC were: V(sub oc) = 802.9 mV, J(sub sc) = 25.07 mA per square centimeters, FF = 60.06%, and efficiency 0 = 8.84%. For this cell, AM 1.5 PV parameters measured at NREL were: V(sub oc) = 788 mV, J(sub sc) = 19.78 mA per square centimeter, FF = 59.44%, efficiency 0 = 9.26%. Quantum efficiency curve showed a sharp QE cutoff equivalent to CIGS2 bandgap of approximately 1.50 eV, fairly close to the optimum value for efficient AM0 PV conversion in the space.

Dhere, Neelkanth G.↗
NASA NTRS2002

Space and Terrestrial Photovoltaics: Synergy and Diversity

A historical view of the research and development in photovoltaics from the perspective of both the terrestrial and the space communities is presented from the early days through the '70s and '80s and the '90s and beyond. The synergy of both communities in the beginning and once again in the present and hopefully future are highlighted, with examples of the important features in each program. The space community which was impressed by the light-weight and reliability of photovoltaics drove much of the early development. Even up to today, nearly every satellites and other scientific space probe that has been launched has included some solar power. However, since the cost of these power systems were only a small fraction of the satellite and launch cost, the use of much of this technology for the terrestrial marketplace was not feasible. It was clear that the focus of the terrestrial community would be best served by reducing costs. This would include addressing a variety of manufacturing issues and raising the rate of production. Success in these programs and a resulting globalization of effort resulted in major strides in the reduction of PV module costs and increased production. Although, the space community derived benefit from some of these advancements, its focus was on pushing the envelope with regard to cell efficiency. The gap between theoretical efficiencies and experimental efficiencies for silicon, gallium arsenide and indium phosphide became almost non-existent. Recent work by both communities have focused on the development thin film cells of amorphous silicon, CuInSe2 and CdTe. These cells hold the promise of lower costs for the terrestrial community as well as possible flexible substrates, better radiation resistance, and higher specific power for the space community. It is predicted that future trends in both communities will be directed toward advances through the application of nanotechnology. A picture is emerging in which the space and terrestrial solar cell communities shall once again share many common goals and, in fact, companies may manufacture both space and terrestrial solar cells in III-V materials and thin film materials. Basic photovoltaics research including these current trends in nanotechnology provides a valuable service for both worlds in that fundamental understanding of cell processes is still vitally important, particularly with new materials or new cell structures. It is entirely possible that one day we might have one solar array design that will meet the criteria for success in both space and on the Earth or perhaps the Moon or Mars.

Bailey, Sheila↗
NASA NTRS2003

Silicon Carbide Diodes Performance Characterization and Comparison With Silicon Devices

Commercially available silicon carbide (SiC) Schottky diodes from different manufacturers were electrically tested and characterized at room temperature. Performed electrical tests include steady state forward and reverse I-V curves, as well as switching transient tests performed with the diodes operating in a hard switch dc-to-dc buck converter. The same tests were performed in current state of the art silicon (Si) and gallium arsenide (GaAs) Schottky and pn junction devices for evaluation and comparison purposes. The SiC devices tested have a voltage rating of 200, 300, and 600 V. The comparison parameters are forward voltage drop at rated current, reverse current at rated voltage and peak reverse recovery currents in the dc to dc converter. Test results show that steady state characteristics of the tested SiC devices are not superior to the best available Si Schottky and ultra fast pn junction devices. Transient tests reveal that the tested SiC Schottky devices exhibit superior transient behavior. This is more evident at the 300 and 600 V rating where SiC Schottky devices showed drastically lower reverse recovery currents than Si ultra fast pn diodes of similar rating.

Lebron-Velilla, Ramon C.↗
NASA NTRS2003

Recent Accomplishments in Laser-Photovoltaic Wireless Power Transmission

Wireless power transmission can be accomplished over long distances using laser power sources and photovoltaic receivers. Recent research at AMOS has improved our understanding of the use of this technology for practical applications. Research by NASA, Boeing, the University of Alabama-Huntsville, the University of Colorado, Harvey Mudd College, and the Naval Postgraduate School has tested various commercial lasers and photovoltaic receiver configurations. Lasers used in testing have included gaseous argon and krypton, solid-state diodes, and fiber optic sources, at wavelengths ranging from the visible to the near infra-red. A variety of Silicon and Gallium Arsenide photovoltaic have been tested with these sources. Safe operating procedures have been established, and initial tests have been conducted in the open air at AMOS facilities. This research is progressing toward longer distance ground demonstrations of the technology and practical near-term space demonstrations.

Fikes, John C.↗
NASA NTRS2003

Experimental Study of the Angle of Repose of Surrogate Martian Dust

Accumulation of wind-blown dust particles on solar cells and instruments will be a great challenge in the exploration of Mars, significantly reducing their lifetime, durability, and power output. For future Mars Lander missions it is crucial to gain information about the ideal angle at which solar panels can be positioned to minimize dust deposition and thus, maximize the power output and lifetime of the solar cells. The major determinant for the optimal panel angle is the angle of repose of the dust particles that is dependent on a variety of physical and chemical properties of the particles, the panel surface, and the environmental conditions on the Mars surface. To gain a basic understanding of the physical and chemical processes that govern dust deposition and to get feedback for the design of an experiment suitable for one of the future Mars Lander missions we simulate atmospheric conditions expected on the Mars surface in a controlled chamber, and observe the angle of repose of Mars dust surrogates. Dust deposition and angle of repose were observed on different sized spheres. To cover a range of potential materials we will use spheres made of 7075 aluminum (10 mm, and 15 mm), alumina oxide ceramic (10 mm), and Teflon(trademark) (10 mm) and wafers of gallium arsenide, silicon.

Moeller, L. E.↗
NASA NTRS2003

Development of UItra-Low Temperature Motor Controllers: Ultra Low Temperatures Evaluation and Characterization of Semiconductor Technologies For The Next Generation Space Telescope

Electronics designed for low temperature operation will result in more efficient systems than room temperature. This improvement is a result of better electronic, electrical, and thermal properties of materials at low temperatures. In particular, the performance of certain semiconductor devices improves with decreasing temperature down to ultra-low temperature (-273 'C). The Low Temperature Electronics Program at the NASA Glenn Research Center focuses on research and development of electrical components and systems suitable for applications in deep space missions. Research is being conducted on devices and systems for use down to liquid helium temperatures (-273 'C). Some of the components that are being characterized include semiconductor switching devices, resistors, magnetics, and capacitors. The work performed this summer has focused on the evaluation of silicon-, silicon-germanium- and gallium-Arsenide-based (GaAs) bipolar, MOS and CMOS discrete components and integrated circuits (ICs), from room temperature (23 'C) down to ultra low temperatures (-263 'C).

Elbuluk, Malik E.↗
NASA NTRS2004

InGaAs/InP Monolithic Interconnected Modules (MIM) for Thermophotovoltaic Applications

There has been a traditional trade-off in thermophotovoltaic (TPV) energy conversion development between systems efficiency and power density. This trade-off originates from the use of front surface spectral controls such as selective emitters and various types of filters. A monolithic interconnected module (MIM) structure has been developed which allows for both high power densities and high system efficiencies. The MIM device consists of many individual indium gallium arsenide (InGaAs) devices series -connected on a single semi-insulating indium phosphide (InP) substrate. The MIMs are exposed to the entire emitter output, thereby maximizing output power density. An infrared (IR) reflector placed on the rear surface of the substrate returns the unused portion of the emitter output spectrum back to the emitter for recycling, thereby providing for high system efficiencies. Initial MIM development has focused on a 1 sq cm device consisting of eight series interconnected cells. MIM devices, produced from 0,74 eV InGAAs, have demonstrated V(sub infinity) = 3.23 volts, J(sub sc) = 70 mA/sq cm and a fill factor of 66% under flashlamp testing. Infrared (IR) reflectance measurement (less than 2 microns) of these devices indicate a reflectivity of less than 82%. MIM devices produced from 0.55 eV InGaAs have also been den=monstrated. In addition, conventional p/n InGaAs devices with record efficiencies (11.7% AM1) have been demonstrated.

Wilt, David M.↗
NASA NTRS2005

Characterization of InGaAs Linear Array for Applications to Remote Sensing

An Indium Gallium Arsenide linear photodiode array in the 1.1-2.5 micron spectral range was characterized. The array has 1024x1 pixels with a 25 micron pitch and was manufactured by Sensors Unlimited, Inc. Characterization and analysis of the electrical and optical properties of a camera system were carried out at room temperature to obtain detector performance parameters. The signal and noise were measured while the array was uniformly illuminated at varying exposure levels. A photon transfer curve was generated by plotting noise as a function of average signal to obtain the camera gain constant. The spectral responsivity was also measured, and the quantum efficiency, read noise and full-well capacity were determined. This paper describes the characterization procedure, analyzes the experimental results, and discusses the applications of the InGaAs linear array to future earth and planetary remote sensing mission.

Garcia, Christopher S.↗