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NASA NTRS1997

Super-Compact Laser

Microcosm, Inc. produced the portable Farfield-2 laser for field applications that require high power pulsed illumination. The compact design was conceived through research at Goddard Space Flight Center on laser instruments for space missions to carry out geoscience studies of Earth. An exclusive license to the key NASA patent for the compact laser design was assigned to Microcosm. The FarField-2 is ideal for field applications, has low power consumption, does not need water cooling or gas supplies, and produces nearly ideal beam quality. The properties of the laser also make it effective over long distances, which is one reason why NASA developed the technology for laser altimeters that can be toted aboard spacecraft. Applications for the FarField-2 include medicine, biology, and materials science and processing, as well as diamond marking, semiconductor line-cutting, chromosome surgery, and fluorescence microscopy.

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NASA NTRS2014

NASA Tech Briefs, February 2014

Topics include: JWST Integrated Simulation and Test (JIST) Core; Software for Non-Contact Measurement of an Individual's Heart Rate Using a Common Camera; Rapid Infrared Pixel Grating Response Testbed; Temperature Measurement and Stabilization in a Birefringent Whispering Gallery Resonator; JWST IV and V Simulation and Test (JIST) Solid State Recorder (SSR) Simulator; Development of a Precision Thermal Doubler for Deep Space; Improving Friction Stir Welds Using Laser Peening; Methodology of Evaluating Margins of Safety in Critical Brazed Joints; Interactive Inventory Monitoring; Sensor for Spatial Detection of Single-Event Effects in Semiconductor-Based Electronics; Reworked CCGA-624 Interconnect Package Reliability for Extreme Thermal Environments; Current-Controlled Output Driver for Directly Coupled Loads; Bulk Metallic Glasses and Matrix Composites as Spacecraft Shielding; Touch Temperature Coating for Electrical Equipment on Spacecraft; Li-Ion Electrolytes Containing Flame-Retardant Additives; Autonomous Robotic Manipulation (ARM); CARVE Log; Platform Perspective Toolkit; Convex Hull-Based Plume and Anomaly Detection; Pre-Filtration of GOSAT Data Using Only Level 1 Data and an Intelligent Filter to Remove Low Clouds; Affordability Comparison Tool - ACT; "Ascent - Commemorating Shuttle" for iPad; Cassini Mission App; Light-Weight Workflow Engine: A Server for Executing Generic Workflows; Model for System Engineering of the CheMin Instrument; Timeline Central Concepts; Parallel Particle Filter Toolkit; Particle Filter Simulation and Analysis Enabling Non-Traditional Navigation; Quasi-Terminator Orbits for Mapping Small Primitive Bodies; The Subgrid-Scale Scalar Variance Under Supercritical Pressure Conditions; Sliding Gait for ATHLETE Mobility; and Automated Generation of Adaptive Filter Using a Genetic Algorithm and Cyclic Rule Reduction.

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NASA NTRS2003

New Methods of Sample Preparation for Atom Probe Specimens

Magnetite is a common conductive mineral found on Earth and Mars. Disk-shaped precipitates approximately 40 nm in diameter have been shown to have manganese and aluminum concentrations. Atom-probe field-ion microscopy (APFIM) is the only technique that can potentially quantify the composition of these precipitates. APFIM will be used to characterize geological and planetary materials, analyze samples of interest for geomicrobiology; and, for the metrology of nanoscale instrumentation. Prior to APFIM sample preparation was conducted by electropolishing, the method of sharp shards (MSS), or Bosch process (deep reactive ion etching) with focused ion beam (FIB) milling as a final step. However, new methods are required for difficult samples. Many materials are not easily fabricated using electropolishing, MSS, or the Bosch process, FIB milling is slow and expensive, and wet chemistry and the reactive ion etching are typically limited to Si and other semiconductors. APFIM sample preparation using the dicing saw is commonly used to section semiconductor wafers into individual devices following manufacture. The dicing saw is a time-effective method for preparing high aspect ratio posts of poorly conducting materials. Femtosecond laser micromachining is also suitable for preparation of posts. FIB time required is reduced by about a factor of 10 and multi-tip specimens can easily be fabricated using the dicing saw.

rock varnish↗

NASA NTRS2015

Precision of FLEET Velocimetry Using High-Speed CMOS Camera Systems

Femtosecond laser electronic excitation tagging (FLEET) is an optical measurement technique that permits quantitative velocimetry of unseeded air or nitrogen using a single laser and a single camera. In this paper, we seek to determine the fundamental precision of the FLEET technique using high-speed complementary metal-oxide semiconductor (CMOS) cameras. Also, we compare the performance of several different high-speed CMOS camera systems for acquiring FLEET velocimetry data in air and nitrogen free-jet flows. The precision was defined as the standard deviation of a set of several hundred single-shot velocity measurements. Methods of enhancing the precision of the measurement were explored such as digital binning (similar in concept to on-sensor binning, but done in post-processing), row-wise digital binning of the signal in adjacent pixels and increasing the time delay between successive exposures. These techniques generally improved precision; however, binning provided the greatest improvement to the un-intensified camera systems which had low signal-to-noise ratio. When binning row-wise by 8 pixels (about the thickness of the tagged region) and using an inter-frame delay of 65 microseconds, precisions of 0.5 meters per second in air and 0.2 meters per second in nitrogen were achieved. The camera comparison included a pco.dimax HD, a LaVision Imager scientific CMOS (sCMOS) and a Photron FASTCAM SA-X2, along with a two-stage LaVision HighSpeed IRO intensifier. Excluding the LaVision Imager sCMOS, the cameras were tested with and without intensification and with both short and long inter-frame delays. Use of intensification and longer inter-frame delay generally improved precision. Overall, the Photron FASTCAM SA-X2 exhibited the best performance in terms of greatest precision and highest signal-to-noise ratio primarily because it had the largest pixels.

Peters, Christopher J.↗

NASA NTRS2015

Precision of FLEET Velocimetry Using High-speed CMOS Camera Systems

Femtosecond laser electronic excitation tagging (FLEET) is an optical measurement technique that permits quantitative velocimetry of unseeded air or nitrogen using a single laser and a single camera. In this paper, we seek to determine the fundamental precision of the FLEET technique using high-speed complementary metal-oxide semiconductor (CMOS) cameras. Also, we compare the performance of several different high-speed CMOS camera systems for acquiring FLEET velocimetry data in air and nitrogen free-jet flows. The precision was defined as the standard deviation of a set of several hundred single-shot velocity measurements. Methods of enhancing the precision of the measurement were explored such as digital binning (similar in concept to on-sensor binning, but done in post-processing), row-wise digital binning of the signal in adjacent pixels and increasing the time delay between successive exposures. These techniques generally improved precision; however, binning provided the greatest improvement to the un-intensified camera systems which had low signal-to-noise ratio. When binning row-wise by 8 pixels (about the thickness of the tagged region) and using an inter-frame delay of 65 micro sec, precisions of 0.5 m/s in air and 0.2 m/s in nitrogen were achieved. The camera comparison included a pco.dimax HD, a LaVision Imager scientific CMOS (sCMOS) and a Photron FASTCAM SA-X2, along with a two-stage LaVision High Speed IRO intensifier. Excluding the LaVision Imager sCMOS, the cameras were tested with and without intensification and with both short and long inter-frame delays. Use of intensification and longer inter-frame delay generally improved precision. Overall, the Photron FASTCAM SA-X2 exhibited the best performance in terms of greatest precision and highest signal-to-noise ratio primarily because it had the largest pixels.

Peters, Christopher J.↗

NASA NTRS2000

Growth and Characterization of III-V Semiconductors for Device Applications

The research goal was to achieve a fundamental understanding of the physical processes occurring at the surfaces and interfaces of epitaxially grown InGaAs/GaAs (100) heterostructures. This will facilitate the development of quantum well devices for infrared optical applications and provide quantitative descriptions of key phenomena which impact their performance. Devices impacted include high-speed laser diodes and modulators for fiber optic communications at 1.55 micron wavelengths and intersub-band lasers for longer infrared wavelengths. The phenomenon of interest studied was the migration of indium in InGaAs structures. This work centered on the molecular beam epitaxy reactor and characterization apparatus donated to CAU by AT&T Bell Laboratories. The material characterization tool employed was secondary ion mass spectrometry. The training of graduate and undergraduate students was an integral part of this program. The graduate students received a thorough exposure to state-of-the-art techniques and equipment for semiconductor materials analysis as part of the Master''s degree requirement in physics. The undergraduates were exposed to a minority scientist who has an excellent track record in this area. They also had the opportunity to explore surface physics as a career option. The results of the scientific work was published in a refereed journal and several talks were presented professional conferences and academic seminars.

Williams, Michael D.↗

NASA NTRS2013

Silicon Heat Pipe Array

Improved methods of heat dissipation are required for modern, high-power density electronic systems. As increased functionality is progressively compacted into decreasing volumes, this need will be exacerbated. High-performance chip power is predicted to increase monotonically and rapidly with time. Systems utilizing these chips are currently reliant upon decades of old cooling technology. Heat pipes offer a solution to this problem. Heat pipes are passive, self-contained, two-phase heat dissipation devices. Heat conducted into the device through a wick structure converts the working fluid into a vapor, which then releases the heat via condensation after being transported away from the heat source. Heat pipes have high thermal conductivities, are inexpensive, and have been utilized in previous space missions. However, the cylindrical geometry of commercial heat pipes is a poor fit to the planar geometries of microelectronic assemblies, the copper that commercial heat pipes are typically constructed of is a poor CTE (coefficient of thermal expansion) match to the semiconductor die utilized in these assemblies, and the functionality and reliability of heat pipes in general is strongly dependent on the orientation of the assembly with respect to the gravity vector. What is needed is a planar, semiconductor-based heat pipe array that can be used for cooling of generic MCM (multichip module) assemblies that can also function in all orientations. Such a structure would not only have applications in the cooling of space electronics, but would have commercial applications as well (e.g. cooling of microprocessors and high-power laser diodes). This technology is an improvement over existing heat pipe designs due to the finer porosity of the wick, which enhances capillary pumping pressure, resulting in greater effective thermal conductivity and performance in any orientation with respect to the gravity vector. In addition, it is constructed of silicon, and thus is better suited for the cooling of semiconductor devices.

Yee, Karl Y.↗

NASA NTRS1992

Research experiences on materials science in space aboard Salyut and Mir

From 1980 through 1991 approximately 500 materials processing experiments were performed aboard the space stations Salyut 6, Salyut 7 and Mir. This includes work on catalysts, polymers, metals and alloys, optical materials, superconductors, electronic crystals, thin film semiconductors, super ionic crystals, ceramics, and protein crystals. Often the resulting materials were surprisingly superior to those prepared on earth. The Soviets were the first to fabricate a laser (CdS) from a crystal grown in space, the first to grow a heterostructure in space, the first super ionic crystal in space, the first crystals of CdTe and its alloys, the first zeolite crystals, the first protein crystals, the first chromium disilicide glass, etc. The results were used to optimize terrestrial materials processing operations in Soviet industry. The characteristics of these three space stations are reviewed, along with the advantages of a space station for materials research, and the problems encountered by the materials scientists who used them. For example, the stations and the materials processing equipment were designed without significant input from the scientific community that would be using them. It is pointed out that successful results have been achieved also by materials processing at high gravity in large centrifuges. This research is also continuing around the world, including at Clarkson University. It is recommended that experiments be conducted in centrifuges in space, in order to investigate the acceleration regime between earth's gravity and the microgravity achieved in orbiting space stations. One cannot expect to understand the influence of gravity on materials processing from only two data points, earth's gravity and microgravity. One must also understand the influence of fluctuations in acceleration on board space stations, the so-called 'g-jitter.' This paper is presented in outline and graphical form.

Regel, Liya L.↗

NASA NTRS1996

Hot Carrier Dynamics in the X Valley in Si and Ge Measured by Pump-IR-Probe Absorption Spectroscopy

Si is the semiconductor of choice for nanoelectronic roadmap into the next century for computer and other nanodevices. With growing interest in Si, Ge, and Si(sub m)Ge(sub n) strained superlattices, knowledge of the carrier relaxation processes in these materials and structures has become increasingly important. The limited time resolution for earlier studies of carrier dynamics in Ge and Si, performed using Nd:glass lasers, was not sufficient to observe the fast cooling processes. In this paper, we present a direct measurement of hot carrier dynamics in the satellite X valley in Si and Ge by time-resolved infrared(IR) absorption spectroscopy, and show the potential of our technique to identify whether the X valley is the lowest conduction valley in semiconductor materials and structures.

Wang, W. B.↗

NASA NTRS1997

Validity Using Pump-Probe Pulses to Determine the Optical Response of Niobate Crystals

A variety of niobate crystals have found their places in nonlinear optical applications as well as in laser devices. In recent years much attention has been paid to study the ultrafast optical response in a variety of photorefractive crystals such as KTa(1-x)Nb(x)O3 and KNbO3 crystals, glasses, semiconductors and polymers for applications in optical switching, information processing, optical computing, and all-optical device systems. Third-order optical nonlinearity is the most important property for realization of all-optical switching. Therefore experiments have been performed on the third order susceptibility using a variety of techniques such as the third-order harmonic generation, EFISH and degenerate four-wave mixing(DFWM). The latter has been conducted with a variety of pump wavelengths and with nanosecond, picosecond and femtosecond pulses. Niobate crystals, such as potassium niobate KNbO3, potassium tantalate niobate KTN family (KTa(1-x)Nb(x)O3), strontium barium niobate SBN (Sr(x)Ba(1-x)Nb2O6) and potassium-sodium niobate SBN (KNSBN) are attractive due to their photorefractive properties for application in optical storage and processing. The pulsed probe experiments performed on theses materials have suggested two types of time responses. These responses have been associated with an coherent response due to Chi(sup 3), and a long lived component due to excited state population. Recent study of DFWM on KNbO3 and KTN family reveals that the long lived component of those crystals depends on the crystal orientation. A slowly decaying signal is observable when the grating vector K(sub g) is not perpendicular to the C-axis of those photorefractive crystals', otherwise the optical response signal would be only a narrow coherent peak with FWHM equal to the cross-correlation width of the write beam pulses. Based on this understanding, we study the photodynamical process of a variety of niobate crystals using DFWM in a Kg perpindicular to C geometry with a ps-YAG: Nd laser operating at 532nm. However, the discrepancies in numerical estimations of Chi(sup 3) in these materials and other nonlinear optical media have resulted in a number of discussions. In order to better understand the photodynamical process of niobate crystals after an short pulse excitation we analyze the factors governing the coherent signal and present the DFWM spectra of niobate crystals.

Liu, Huimin↗

NASA NTRS1980

CdInP semiconductor alloy

Semiconductor alloy of CdSInP deposited onto CdS substrate using liquid-phase epitaxy (LPE) employed in solvent is replacement for InP n- and p-type heterojunction layers contained in GaAsp laser devices. Alloy will aid in lowering current density of laser and enhance its longevity and CW operation at room temperature.

Hawrylo, F. Z.↗

NASA NTRS1991

Optical processing using photorefractive GaAs and InP

The unique features of photorefractive compound semiconductors are presented. The advantages of this class of nonlinear optical materials for optical processing are illustrated with examples using GaAs and InP. The difference between GaAs and InP in the laser power density requirement is discussed.

Liu, Duncan T. H.↗

NASA NTRS1990

Solid State Laser

The Titan-CW Ti:sapphire (titanium-doped sapphire) tunable laser is an innovation in solid-state laser technology jointly developed by the Research and Solid State Laser Divisions of Schwartz Electro-optics, Inc. (SEO). SEO is producing the laser for the commercial market, an outgrowth of a program sponsored by Langley Research Center to develop Ti:sapphire technology for space use. SEO's Titan-CW series of Ti:sapphire tunable lasers have applicability in analytical equipment designed for qualitative analysis of carbohydrates and proteins, structural analysis of water, starch/sugar analyses, and measurements of salt in meat. Further applications are expected in semiconductor manufacture, in medicine for diagnosis and therapy, and in biochemistry.

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NASA NTRS1987

International Conference on Vacuum Ultraviolet Radiation Physics, 8th, Lunds Universitet, Sweden, Aug. 4-8, 1986, Proceedings

The interactions of VUV radiation with solids are explored in reviews and reports of recent theoretical and experimental investigations from the fields of atomic and molecular physics, solid-state physics, and VUV instrumentation. Topics examined include photoabsorption and photoionization, multiphoton processes, plasma physics, VUV lasers, time-resolved spectroscopy, synchrotron radiation centers, solid-state spectroscopy, and dynamical processes involving localized levels. Consideration is given to the fundamental principles of photoemission, spin-polarized photoemission, inverse photoemission, semiconductors, organic materials, and adsorbates.

Nilsson, Per-Olof↗

NASA NTRS1999

Minority carrier device comprising a passivating layer including a Group 13 element and a chalcogenide component

A minority carrier device includes at least one junction of at least two dissimilar materials, at least one of which is a semiconductor, and a passivating layer on at least one surface of the device. The passivating layer includes a Group 13 element and a chalcogenide component. Embodiments of the minority carrier device include, for example, laser diodes, light emitting diodes, heterojunction bipolar transistors, and solar cells.

Barron, Andrew R.↗

NASA NTRS1985

Enhanced adhesion of films to semiconductors or metals by high energy bombardment

Films (12) of a metal such as gold or other non-insulator materials are firmly bonded to other non-insulators such as semiconductor substrates (10), suitably silicon or gallium arsenide by irradiating the interface with high energy ions. The process results in improved adhesion without excessive doping and provides a low resistance contact to the semiconductor. Thick layers can be bonded by depositing or doping the interfacial surfaces with fissionable elements or alpha emitters. The process can be utilized to apply very small, low resistance electrodes (78) to light-emitting solid state laser diodes (60) to form a laser device 70.

Tombrello, Thomas A.↗

NASA NTRS1988

Transient photoconductivity in the ferromagnetic semiconductor CdCr2Se4

The transient photoconductive response time of the ferromagnetic semiconductor CdCr2Se4 was measured to be smaller than 90 ps, the response time of the scope. The measurements were performed at room temperature (300 K) for 0.53 and 1.06 microns excitations using a mode locked frequency-doubled YAG laser.

Walser, A. D.↗

NASA NTRS1982

Drops and Bubble in Materials Science

The formation of extended p-n junctions in semiconductors by drop migration, mechanisms and morphologies of migrating drops and bubbles in solids and nucleation and corrections to the Volmer-Weber equations are discussed. Bubble shrinkage in the processing of glass, the formation of glass microshells as laser-fusion targets, and radiation-induced voids in nuclear reactors were examined.

Doremus, R. H.↗