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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 487 records · Page 27
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Nickel Interlayer for Improved Silver Complex Inks Metallization in GaAs Photovoltaic Devices

Large areas of III-V photovoltaic panels are essential to supplying operational energy for a growing demand of satellites of strategic importance to the United States military, covering a range of applications. High fabrication costs and low manufacturing throughput are key barriers to meeting the necessary supply, which can in turn jeopardize mission success. At the device level, metallization based on printing of complex metal inks has attracted significant research interest due to its potential to substantially reduce processing costs and increase throughput while achieving electrical performance comparable to those of conventional metallization schemes. For GaAs photovoltaic devices, however, reliable electrical contacting remains challenging due to the formation of an interfacial oxide layer at the metal-semiconductor interface. This oxide barrier severely limits current extraction from the PV absorber, resulting in unacceptably high contact resistance. In this study, we report the introduction of a reactive nickel (Ni) interfacial layer between the silver metal fingers and the GaAs substrate to suppress oxide formation while maintaining a low-resistance electrical interface, and show performance data from fully fabricated GaAs devices incorporating the Ni interlayer. These results demonstrate the potential of reactive Ni ink as an effective interfacial layer for improved electrical contacting in low-cost PV metallization schemes.

14 SOLAR ENERGY↗
NASA NTRS2007

Array of Bolometers for Submillimeter- Wavelength Operation

A feed-horn-coupled monolithic array of micromesh bolometers is undergoing development for use in a photometric camera. The array is designed for conducting astrophysical observations in a wavelength band centered at 350 m. The bolometers are improved versions of previously developed bolometers comprising metalized Si3N4 micromesh radiation absorbers coupled with neutron- transmutation-doped Ge thermistors. Incident radiation heats the absorbers above a base temperature, changing the electrical resistance of each thermistor. In the present array of improved bolometers (see figure), the thermistors are attached to the micromesh absorbers by indium bump bonds and are addressed by use of lithographed, vapor-deposited electrical leads. This architecture reduces the heat capacity and minimizes the thermal conductivity to 1/20 and 1/300, respectively, of earlier versions of these detectors, with consequent improvement in sensitivity and speed of response. The micromesh bolometers, intended to operate under an optical background set by thermal emission from an ambient-temperature space-borne telescope, are designed such that the random arrival of photons ("photon noise") dominates the noise sources arising from the detector and readout electronics. The micromesh is designed to be a highly thermally and optically efficient absorber with a limiting response time of about 100 s. The absorber and thermistor heat capacity are minimized in order to give rapid speed of response. Due to the minimization of the absorber volume, the dominant source of heat capacity arises from the thermistor.

Bock, James↗
DOE OSTI2024

Republished: Colossal density-driven resistance response in the negative charge transfer insulator MnS 2

The Mn chalcogenides show a remarkable variation in structural and physical properties with density. In MnS 2 we observe a pronounced difference with the effects of varying hydrostaticity with pressure inducing a structural transition at 300 K. Within the pyrite phase, a colossal electrical resistance drop of 10 8 Ohms is observed by 12 GPa of nonhydrostatic compression at 300 K. DFT simulations reveal the metallization to be unexpectedly driven by previously unoccupied S$^{2-}_2$ σ$^*_{3p}$ antibonding states crossing the Fermi level. This is a seldom seen variant of the charge transfer insulator to metal transition for negative charge transfer insulators which have anions with an unsaturated valence. Finally, by 36 GPa of nonhydrostatic compression, the single presence of the low-spin insulating arsenopyrite (P2 1 /c) phase is confirmed, and the bulk metallicity is broken with the system returning to an insulative electronic state.

36 MATERIALS SCIENCE↗
NASA NTRS1983

Thermoelectric properties of non-stoichiometric lanthanum sulfides

The lanthanum sulfides are promising candidate materials for high-efficiency thermoelectric applications at temperatures up to 1300 C. The non-stoichiometric lanthanum sulfides (LaS(x), where x is in the range 1.33-1.50) appear to possess the most favorable thermoelectric properties. The Seebeck coefficient and resistivity vary significantly with composition, so that an optimum value of alpha sq/rho (where alpha is the Seebeck coefficient and rho is the resistivity) can be chosen. The thermal conductivity remains approximately constant with stoichiometry, so a material with an optimum value of alpha sq/rho should possess the optimum figure-of-merit. Data for the Seebeck coefficient and electrical resistivity of non-stoichiometric lanthanum sulfides will be pressed, together with structural properties of these materials.

Shapiro, E.↗
NASA NTRS1952

Oxidation-resistance Mechanism and Other Properties of Molybdenum Disilicide

The outstanding oxidation resistance of molybdenum disilicide at 2400 F and above was found to depend on the formation of a protective siliceous coating which a-cristobalie has been identified. Molybdenum disilicide is not inherently resistant to oxidation and in powdered form burns at low temperatures.Melting and casting experiments have demonstrated the decomposition of the material at the melting point. The room-temperature modulus of elasticity has been determined and electric-resistivity data are given to 2000 F.

MATERIALS, PROPERTIES-CORROSION RESISTANCE↗
DOE OSTI2022

Phase-transition-induced thermal hysteresis in Type-II weyl semimetals M o T e 2 and M o 1 − x W x T e 2

The resistivity versus temperature measurement is commonly used for identifying temperature-induced phase-change and the resulting hysteresis loop. However, while the resistance is influenced by both the density of states and the carrier lifetimes, the Seebeck coefficient is influenced predominantly by the density of states, and hence is a better probe of the phase of the material. Here, 1T'-T d temperature-induced phase transition in MoTe 2 is studied using temperature-dependent X-ray diffraction, resistivity, and Seebeck coefficient measurements. A more distinct hysteresis is observed when measuring the Seebeck coefficient which is consistent with direct measurements of the crystallographic angle using the temperature-dependent X-ray diffraction. The Seebeck and electrical resistivity measurements indicate a competing contribution of the electrons and holes. The contribution of electron pockets becomes more dominant when molybdenum atoms are replaced by tungsten. In MoTe 2 , a topologically induced enhancement of the Nernst coefficient is observed at low temperatures and a relatively large phase-transition induced Thomson coefficient of 111 μV∙K -1 is measured at 254 K.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Advanced monitoring of soil-vegetation co-dynamics reveals the successive controls of snowmelt on soil moisture and on plant seasonal dynamics in a mountainous watershed

Evaluating the interactions between above- and below-ground processes is important to understand and quantify how ecosystems respond differently to atmospheric forcings and/or perturbations and how this depends on their intrinsic characteristics and heterogeneity. Improving such understanding is particularly needed in snow-impacted mountainous systems where the complexity in water and carbon storage and release arises from strong heterogeneity in meteorological forcing and terrain, vegetation and soil characteristics. This study investigates spatial and temporal interactions between terrain, soil moisture, and plant seasonal dynamics at the intra- and inter-annual scale along a 160 m long mountainous, non-forested hillslope-to-floodplain system in the upper East River Watershed in the upper Colorado River Basin. To this end, repeated UAV-based multi-spectral aerial imaging, ground-based soil electrical resistivity imaging, and soil moisture sensors were used to quantify the interactions between above and below-ground compartments. Results reveal significant soil-plant co-dynamics. The spatial variation and dynamics of soil water content and electrical conductivity, driven by topographic and soil intrinsic characteristics, correspond to distinct plant types, with highest plant productivity in convergent areas. Plant productivity in heavy snow years benefited from more water infiltration as well as a shallow groundwater table depth. In comparison, low snowpack years with an early first bare-ground date, which are linked to an early increase in plant greenness, imply a short period of saturated conditions that leads to lower average and maximum greenness values during the growing season. Overall, these results emphasize the strong impact of snowpack dynamics, and terrain and subsurface characteristics on the heterogeneity in plant type and seasonal dynamics.

54 ENVIRONMENTAL SCIENCES↗
NASA NTRS1995

Better Ohmic Contacts For InP Semiconductor Devices

Four design modifications enable fabrication of improved ohmic contacts on InP-based semiconductor devices. First modification consists of insertion of layer of gold phosphide between n-doped InP and metal or other overlayer of contact material. Second, includes first modification plus use of particular metal overlayer to achieve very low contact resistivities. Third, also involves deposition of Au(2)P(3) interlayer; in addition, refractory metal (W or Ta) deposited to form contact overlayer. In fourth, contact layer of Auln alloy deposited directly on InP. Improved contacts exhibit low electrical resistances and fabricated without exposing devices to destructive predeposition or postdeposition treatments.

Weizer, Victor G.↗
DOE OSTI2020

Copper–Carbon Nanotube Composites Enabled by Electrospinning for Advanced Conductors

The power losses associated with the electrical resistance of copper (Cu) have generated considerable interest in the development of advanced conductors that incorporate carbon nanotubes (CNTs) into the Cu matrix—ultraconductive Cu (UCC) composites—to increase energy efficiency in various industrial and residential applications, ranging from electric power transmission and rotating machinery to electronic devices. To meet this demand, we describe an electrospinning-based polymer nanofiber templating strategy for the fabrication of UCC composites with electrical and mechanical performance exceeding that of Cu. Our approach involves electrospinning of polyvinylpyrrolidone (PVP)-based solutions containing CNTs into aligned PVP/CNT nanofibers onto Cu foil substrates, followed by vacuum-assisted thermal removal of organic solvent/polymer from the CNT matrix to achieve a uniformly distributed CNT layer on the Cu surface. Following additional Cu deposition, the Cu–CNT–Cu composites demonstrated similar electrical conductivity, higher current carrying capacity, and improved mechanical properties compared with those obtained from reference Cu. Importantly, after the heat treatment, Raman analysis of the CNT network displayed an increased metallic character that supports the enhanced electrical properties of the UCC composites. Thus, we believe that these performance characteristics together with the commercial viability of the present approach could open new possibilities in designing advanced conductors for a broad range of electrical systems and industrial applications.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1994

Optical and Electrical Properties of Reactively Sputtered TiN, ZrN, and HfN Thin Films

Thin films of titanium, zirconium, and hafnium nitride are prepared by DC magnetron reactive sputtering at room temperature on fused silica, optical glass, and silicon substrates. Deposition parameters are investigated in order to obtain stoichiometric films. The optical and electrical properties of the films as a function of nitrogen partial pressure are determined. The results show that an inverse correlation exists between the optical reflectance and the electrical resistivity of the films. Ellipsometer data for all three films show that their refractive index in the visible spectrum is decreased by increasing the film thickness while the extinction coefficient is unchanged. Thin films of TiN have the lowest room temperature resistivity relative to ZrN and HfN thin films.

Reactive↗
NASA NTRS2006

Dielectric Heaters for Testing Spacecraft Nuclear Reactors

A document proposes the development of radio-frequency-(RF)-driven dielectric heaters for non-nuclear thermal testing of the cores of nuclear-fission reactors for spacecraft. Like the electrical-resistance heaters used heretofore for such testing, the dielectric heaters would be inserted in the reactors in place of nuclear fuel rods. A typical heater according to the proposal would consist of a rod of lossy dielectric material sized and shaped like a fuel rod and containing an electrically conductive rod along its center line. Exploiting the dielectric loss mechanism that is usually considered a nuisance in other applications, an RF signal, typically at a frequency .50 MHz and an amplitude between 2 and 5 kV, would be applied to the central conductor to heat the dielectric material. The main advantage of the proposal is that the wiring needed for the RF dielectric heating would be simpler and easier to fabricate than is the wiring needed for resistance heating. In some applications, it might be possible to eliminate all heater wiring and, instead, beam the RF heating power into the dielectric rods from external antennas.

Sims, William Herbert↗
DOE OSTI2025

Predicting Quantum Criticality in Single-Crystalline Ce 2 Ru 3 Ge 5

Strongly correlated f-electron systems are known to host exotic quantum states, such as quantum criticality, complex order parameters, and unconventional superconductivity. However, the appearance of these exotic states is difficult to predict, making the study of quantum critical behavior challenging, especially in ferromagnetic materials. Herein, we report a structure–property map for Ce 2 M 3 X 5 (M = transition metal; X = main group element) that aids in the targeted design of materials likely to exhibit quantum criticality. Guided by this map, we report on the synthesis of single-crystalline Ce 2 Ru 3 Ge 5 and provide, for the first time, magnetic susceptibility, heat capacity, resistivity, and magnetoresistance measurements on single crystals. Here, we observe a weak ferromagnetic-like response at 7.5 K, which is contrasted with the bulk ferromagnetic ordering that appears in polycrystalline samples. Non-Fermi liquid behavior is seen in the temperature dependent electrical resistivity and heat capacity of the single crystals, suggesting proximity to a ferromagnetic quantum critical point without chemical or physical pressure. Given the contrast with previous reports of polycrystals, these results lead us to propose that single crystalline Ce 2 Ru 3 Ge 5 is intrinsically tuned into the vicinity of a ferromagnetic quantum critical point.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Decision-tree structures utilizing a phase-transition material

The rich internal physics due to competing electronic phases present in phase-transition materials such as VO2 offer the potential for compact building block design for emerging non-von Neumann computing technologies. Here, based on the relaxation dynamics of an insulator-metal phase transition, we demonstrate experimentally a decision-tree classifier embedded within a single volatile resistive switching device. The tree is constructed by the combination of the voltage pulse and relaxation time and can adapt to different tasks. We use machine learning to analyze the relaxation process, enabling a predictive voltage-relaxation time phase diagram for the electrical resistance state. Classification of the etiology of the chronic cough is presented as a proof-of-principle use case. Further, our approach can be generalized to broader classes of solid-state and solid-liquid interfacial systems that demonstrate a variety of phase relaxations.

36 MATERIALS SCIENCE↗
DOE OSTI2022

NETL Plastic Pipes Project - June 2022 Progress Report

Plastic or composite pipelines have been the bane of the utility locating industry because conduits are neither conductive nor magnetic, which are the properties traditionally used to locate buried utilities. Ground penetrating radar (GPR) is an effective geophysical tool for locating plastic/composite pipeline where the resistive cover allows for adequate penetration of radar energy. However, GPR cannot be used in areas where the soil cover is conductive due to significant clay and/or salt content. This study takes a comprehensive look at near-surface geophysical methods that potentially are useful for locating buried plastic/composite pipelines, either singly or in combination with other geophysical methods. Specifically, this modeling study uses computational numerical methods to forward model the response of GPR, resistivity, seismic, and gravity gradiometry methods to plastic/composite pipelines for various scenarios including: (1) pipe diameters ranging between 2 in. to 12 in.; (2) burial depths ranging between 3 ft to 4 ft; (3) various degrees in contrast in physical properties (i.e., permittivity, elasticity, electrical resistivity, density); and (4) various experimental acquisition choices (e.g., GPR radar frequencies, seismic source frequency, electrode spacing).

47 OTHER INSTRUMENTATION↗
DOE OSTI2026

Aluminum bonded SmCo5 magnets with enhanced mechanical strength

Despite their versatility and easy manufacturability, polymer-bonded magnets find limited application due to their limited mechanical properties and temperature resistance. In this study, we developed mechanically robust, aluminum-bonded SmCo5 magnets by utilizing a low-temperature, shear-assisted friction consolidation technique. Bonded magnets with varying magnetic phase content were fabricated at processing temperature of 500°C, and their microstructures, magnetic, mechanical, and electrical properties were systematically investigated. The resulting bonded-magnets showed effective consolidation with nanocrystalline microstructures. Magnetic properties were found to be tunable through variations in binder phase content, with coercivity reaching values up to 15.3 kOe (1217.5 kA/m) and maximum magnetic energy product up to 3.6 MGOe (28.7 kJ/m3), which are comparable to other bonded magnets. Electrical resistivities were lower than the polymer-bonded magnets, but comparable to the sintered ones. We observed an average flexural strength of 223 MPa for 60 vol.% SmCo5/Al sample, which is nearly two times higher than the reported values for sintered and bonded Sm-Co magnets. Our research demonstrated an effective approach to fabricate metal-bonded permanent magnets with superior magnetic and mechanical properties potentially applicable for high temperature applications.

Poudel Chhetri, Tej Bahadur↗
DOE OSTI2022

Electron doping of NdNiO 3 thin films using dual chamber CaH 2 annealing

Hydrogen donor doping has been exploited as a strategy to manipulate the electronic structure and electrical properties of functional oxide systems. Especially, the development of synthetic methods to achieve electron doping of perovskite rare-earth nickelate thin films utilizing interstitial hydrogen is highly desirable considering the rich electronic phase diagram hosting several functional properties. Here, in this work, we present the hydrogenation of NdNiO 3 (NNO) thin films using CaH 2 annealing and the resulting giant modulation of electrical resistivity in hydrogenated NNO (H–NNO) thin films. Magnetron sputtering was employed to deposit epitaxial ~60 nm-thin NNO films on single crystal LaAlO 3 (LAO) substrates. The formation of the pristine perovskite NNO phase was realized after annealing the films at 500 °C for 24 h. CaH 2 annealing of NNO thin films for time durations ranging from 1 to 6 h was performed in a vacuumed ampule with two interconnected chambers at 280 °C. The two-chamber design enables a simple and clean approach for hydrogen doping without physical contact between the powder and sample of interest. X-ray diffraction and Raman spectroscopy revealed the formation of NNO in pristine samples, and the subsequent hydrogen incorporation upon CaH 2 annealing without forming any impurity phases. The conversion of the oxidation state of Ni towards +2 upon CaH 2 annealing was probed using X-ray photoelectron spectroscopy and X-ray absorption spectroscopy. Consequently, a substantial increase in the room-temperature resistivity was observed upon CaH 2 annealing indicating the formation of a strongly correlated electronic configuration of Ni in H–NNO due to electron doping. Overall, the findings of this study highlight the versatility of CaH 2 annealing as an electron doping method to tune the electrical properties of correlated oxides at low temperatures.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗