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At least 487 records · Page 27

Novel optoelectronic devices; Proceedings of the Meeting, The Hague, Netherlands, Mar. 31-Apr. 2, 1987

The present conference on novel optoelectronics discusses topics in the state-of-the-art in this field in the Netherlands, quantum wells, integrated optics, nonlinear optical devices and fiber-optic-based devices, ultrafast optics, and nonlinear optics and optical bistability. Attention is given to the production of fiber-optics for telecommunications by means of PCVD, lifetime broadening in quantum wells, nonlinear multiple quantum well waveguide devices, tunable single-wavelength lasers, an Si integrated waveguiding polarimeter, and an electrooptic light modulator using long-range surface plasmons. Also discussed are backward-wave couplers and reflectors, a wavelength-selective all-fiber switching matrix, the impact of ultrafast optics in high-speed electronics, the physics of low energy optical switching, and all-optical logical elements for optical processing.

Adams, Michael J.↗

Use of LEBU-devices for drag reduction at flight conditions

The practical aspects of drag reduction using LEBU (large-eddy break-up) devices, turbulence manipulators, etc. in flight are discussed with the help of experience from previous flight tests. These tests have shown that appreciable reductions in local skin friction exist under flight conditions, and that the turbulence-manipulating effects can be found for swept tandem devices in transonic as well as supersonic flows. The unsteady loads experienced with the devices are discussed in connection with the frequencies occurring in this type of real flight conditions.

Bertelrud, A.↗

Stabilizing Semiconductor Devices With Hydrogen

Damage by radiation healed rapidly. Feature provides continuous, rapid recovery of devices from degradation caused by hot electrons, photons, and ionizing radiation. Several candidate sites for palladium film catalysts, inserted during manufacture as integral parts of devices. Paladium films made by evaporation, sputtering, or chemical-vapor deposition. If additional storage required, thick layer of palladium plated on inside of package surrounding device. Hydrogen stored by exposing palladium to hydrogen gas just before package sealed hermetically.

Overhauser, Albert W.↗

Microwave and millimeter-wave power generation in silicon carbide (SiC) IMPATT devices

There are two points that should be noted. First, in the thermal resistance calculations it is assumed that the device is operating at 773 K while the results of the room temperature simulations are used. This was done because there is not enough information to correctly predict the material parameters at 773 K. Since, in general, device performance degrades with increasing temperature, the cw results are perhaps a bit optimistic. Second, the electric field in these structures gets extremely high and there might be some possibility of tunneling. This was not incorporated into the simulation. Again, this could result in different device operating conditions.

Mehdi, I.↗

Ion-beam focusing in a double-plasma device

The authors studied the propagation of a low-energy charge-neutralized ion beam injected into the target region of a long double-plasma device. A magnetic field of up to about 180 G may be applied along the axis of the device. As a result of charge exchange collisions, the ion beam is attenuated as it propagates into the target region. However, under certain conditions of magnetic field strength and neutral gas pressure, the authors have observed a `reemergence' of the beam on axis far downstream in the target. This reemergence of the ion beam is attributed to a focusing of the ions by a self-consistently produced radial ambipolar electric field. The effect may be expected to occur in other types of plasma devices as well, whenever a sufficiently large radially inward electric field is present.

Johnson, James C.↗

Determining mode excitations of vacuum electronics devices via three-dimensional simulations using the SOS code

The SOS code is used to compute the resonance modes (frequency-domain information) of sample devices and separately to compute the transient behavior of the same devices. A code, DOT, is created to compute appropriate dot products of the time-domain and frequency-domain results. The transient behavior of individual modes in the device is then plotted. Modes in a coupled-cavity traveling-wave tube (CCTWT) section excited beam in separate simulations are analyzed. Mode energy vs. time and mode phase vs. time are computed and it is determined whether the transient waves are forward or backward waves for each case. Finally, the hot-test mode frequencies of the CCTWT section are computed.

Warren, Gary↗

Impact of device level faults in a digital avionic processor

This paper describes an experimental analysis of the impact of gate and device-level faults in the processor of a flight control system. Via mixed mode simulation faults were injected both at the gate (stuck-at) and at the transistor levels, and their propagation through the chip to the output pins was measured. The results show that there is little correspondence between a stuck-at and a device-level fault model insofar as error activity or detection within a functional unit is concerned. Insofar as error activity outside the injected unit and at the output pins are concerned, the stuck-at and device models track each other, although the stuck-at model overestimates, by over one hundred percent, the probability of fault propagation to the output pins. The stuck-at model significantly underestimates the impact of an internal chip fault on the output pins.

Kim, S.↗

Iridium Film For Charge-Coupled Device

Usability extended to different environments. Application of thin film of iridium to back surface of back-surface-illuminated charge-coupled device expected to increase and stabilize quantum efficiency at wavelengths less than 4,500 Angstrom. Enhances quantum efficiency according to principle discussed in "Metal Film Increases CCD Output" (NPO-16815). Does not react with hydrogen, so device need not be kept in oxygen: Advantage where high absorption of ultraviolet light by oxygen undesirable; for example, when device used to make astronomical observations from high altitudes.

Hecht, Michael H.↗

Characterization of devices, circuits, and high-temperature superconductor transmission lines by electro-optic testing

The development of a capability for testing transmission lines, devices, and circuits using the optically-based technique of electro-optics sampling was the goal of this project. Electro-optic network analysis of a high-speed device was demonstrated. The project involved research on all of the facets necessary in order to realize this result, including the discovery of the optimum electronic pulse source, development of an adequate test fixture, improvement of the electro-optic probe tip, and identification of a device which responded at high frequency but did not oscillate in the test fixture. In addition, during the process of investigating patterned high-critical-temperature superconductors, several non-contacting techniques for the determination of the transport properties of high T(sub c) films were developed and implemented. These are a transient, optical pump-probe, time-resolved reflectivity experiment, an impulsive-stimulated Raman scattering experiment, and a terahertz-beam coherent-spectroscopy experiment. The latter technique has enabled us to measure both the complex refractive index of an MgO substrate used for high-T(sub c) films and the complex conductivity of a YBa2Cu3O(7-x) sample. This information was acquired across an extremely wide frequency range: from the microwave to the submillimeter-wave regime. The experiments on the YBCO were conducted without patterning of, or contact to, the thin film. Thus, the need for the more difficult transmission-line experiments was eliminated. Progress in all of these areas was made and is documented in a number of papers. These papers may be found in the section listing the abstracts of the publications that were issued during the course of the research.

Whitaker, John F.↗

Double face sealing device

A double face sealing device is disclosed for mounting between two surfaces to provide an air-tight and fluid-tight seal between a closure member bearing one of the surfaces and a structure or housing bearing the other surface which extends around the opening or hatchway to be closed. The double face sealing device includes a plurality of sections or segments mounted to one of the surfaces, each having a main body portion, a pair of outwardly extending and diverging, cantilever, spring arms, and a pair of inwardly extending and diverging, cantilever, spring arms, an elastomeric cover on the distal, free ends of the outwardly extending and diverging spring arms, and an elastomeric cover on the distal, free, ends of the outwardly extending and diverging spring arms, and an elastomeric cover on the distal, free ends of the inwardly extending and diverging spring arms. The double face sealing device has application or use in all environments requiring a seal, but is particularly useful to seal openings or hatchways between compartments of spacecraft or aircraft.

Weddendorf, Bruce↗

Exploratory study of vortex-generating devices for turbulent flow separation control

Flow phenomena and the relative performance associated with several devices for controlling turbulent separated flow were investigated at low speeds. Vortex-generating devices examined included: submerged vortex generators (Wheeler doublet and wishbone types), spanwise cylinders, large-eddy breakup devices (LEBU) at small angle of attack (alpha), and vortex-generator jets (VGJ). Dye flow visualization tests in a water tunnel indicated that wishbone vortex generators in the forward orientation shed horseshoe vortices; wishbone vortex generators oriented in the reverse direction and doublet vortex generators shed streamwise counterrotating vortices; a spanwise cylinder located near the wall and LEBUs at alpha = -10 deg produced eddies which rotated with the same sign as the mean vorticity in a turbulent boundary layer; and the most effective VGJs produced streamwise corotating vortices. Comparative wind tunnel tests conducted on a curved backward-facing ramp indicated that transferring momentum from the outer region of a turbulent boundary layer by embedded streamwise vortices is more effective than by transverse vortices for separation control applications.

Lin, J. C.↗

Planar doped barrier devices for subharmonic mixers

An overview is given of planar doped barrier (PDB) devices for subharmonic mixer applications. A simplified description is given of PDB characteristics along with a more complete numerical analysis of the current versus voltage characteristics of typical structures. The analysis points out the tradeoffs between the device structure and the resulting characteristics that are important for mixer performance. Preliminary low-frequency characterization results are given for the device structures, and a computer analysis of subharmonic mixer parameters and performance is presented.

Lee, T. H.↗

Sub-electron noise charge coupled devices

A charge coupled device designed for celestial spectroscopy has achieved readout noise as low as 0.6 electrons rms. A nondestructive output circuit was operated in a special manner to read a single pixel multiple times. Off-chip electronics averaged the multiple values, reducing the random noise by the square root of the number of readouts. Charge capacity was measured to be 500,000 electrons. The device format is 1600 pixels horizontal by 64 pixels vertical. Pixel size is 28 microns square. Two output circuits are located at opposite ends of the 1600 bit CCD register. The device was thinned and operated backside illuminated at -110 degrees C. Output circuit design, layout, and operation are described. Presented data includes the photon transfer curve, noise histograms, and bar-target images down to 3 electrons signal. The test electronics are described, and future improvements are discussed.

Chandler, Charles E.↗

A technique for determining Urbach edge, midgap states and electric field in a-Si:H and a-(Si,Ge):H devices

A technique for measuring the Urbach energy of valence band tail states and midgap defect densities in a-Si:H and a-(Si,Ge):H devices is described. The Urbach energy is determined by measuring the quantum efficiency (QE) of delocalized holes in the devices, whereas the midgap state density (DOS) is estimated by measuring the QE of localized holes. The distinction between delocalized and localized holes is obtained from the behavior of the QE upon the application of reverse bias to the device. The QE of holes localized in midgap states increases significantly upon the application of reverse bias because of Frenkel-Poole tunneling, whereas the QE of holes in tail states does not show such an increase. It is shown that upon light soaking the Urbach edge does not change, but the midgap DOS does increase significantly. A primary consequence of the increase in DOS is a decrease in electric field in the low-field middle i region of the p-i-n cell. The decrease in electric field is experimentally estimated by fitting the increase in the reverse bias QE to Frenkel-Poole tunneling.

Dalal, Vikram L.↗

Liquid hydrogen mass flow through a multiple orifice Joule-Thomson device

Liquid hydrogen mass flow rate, pressure drop, and temperature drop data were obtained for a number of multiple orifice Joule-Thomas devices known as visco jets. The present investigation continues a study to develop an equation for predicting two phase flow of cryogens through these devices. The test apparatus design allowed isenthalpic expansion of the cryogen through the visco jets. The data covered a range of inlet and outlet operating conditions. The mass flow rate range single phase or two phase was 0.015 to 0.98 lbm/hr. The manufacturer's equation was found to overpredict the single phase hydrogen data by 10 percent and the two phase data by as much as 27 percent. Two modifications of the equation resulted in a data correlation that predicts both the single and two phase flow across the visco jet. The first modification was of a theoretical nature, and the second strictly empirical. The former reduced the spread in the two phase data. It was a multiplication factor of 1 - X applied to the manufacturer's equation. The parameter X is the flow quality downstream of the visco jet based on isenthalpic expansion across the device. The latter modification was a 10 percent correction term that correlated 90 percent of the single and two phase data to within +/- 10 percent scatter band.

Papell, S. Stephen↗

Coupling device with improved thermal interface

The primary object of the present invention is to provide a simple, reliable, and lightweight coupling that will also have an efficient thermal interface. A further object of the invention is to provide a coupling that is capable of blind mating with little or no insertion forces. Another object of the invention is to provide a coupling that acts as a thermal regulator to maintain a constant temperature on one side of the coupling. Another object of the invention is to increase the available surface area of a coupling thus providing a larger area for the conduction of heat across the thermal interface. Another object of the invention is to provide a fluidic coupling that has no fluid passing across the interface, thus reducing the likelihood of leaks and contamination. The foregoing objects are achieved by utilizing, as in the prior art, a hot area (at an elevated temperature as compared to a cold area) with a need to remove excess heat from the hot area to a cold area. In this device, the thermal interface will occur not on a planar horizontal surface, but along a non-planar vertical surface, which will reduce the reaction forces and increase the thermal conductivity of the device. One non-planar surface is a surface on a cold pin extending from the cold area and the other non-planar surface is a surface on a hot pin extending from the hot area. The cold pin is fixed and does not move while the hot pin is a flexible member and its movement towards the cold pin will bring the two non-planar surfaces together forming the thermal interface. The actuating member for the device is a shape-memory actuation wire which is attached through an aperture to the hot pin and through another aperture to an actuation wire retainer. By properly programming the actuation wire, heat from the hot area will cause the actuation wire to bend the hot wire. Heat from the hot area will cause the actuation wire to bend the hot pin towards the cold pin forming the coupling and the desired thermal interface. The shape-memory actuation wire is made of a shape-memory-effect alloy such as Nitinol.

Milam, Malcolm Bruce↗

Aerodynamic performance of a drag reduction device on a full-scale tractor/trailer

The effectiveness of an aerodynamic boattail on a tractor/trailer road vehicle was measured in the NASA Ames Research Center 80- by 120-Foot Wind Tunnel. Results are examined for the tractor/trailer with and without the drag reduction device. Pressure measurements and flow visualization show that the aerodynamic boattail traps a vortex or eddy in the corner formed between the device and the rear corner of the trailer. This recirculating flow turns the flow inward as it separates from the edges of the base of the trailer. This modified flow behavior increases the pressure acting over the base area of the truck, thereby reducing the net aerodynamic drag of the vehicle. Drag measurements and pressure distributions in the region of the boattail device are presented for selected configurations. The optimum configuration reduces the overall drag of the tractor/trailer combination by about 10 percent at a zero yaw angle. Unsteady pressure measurements do not indicate strong vortex shedding, although the addition of the boattail plates increases high frequency content of the fluctuating pressure.

Lanser, Wendy R.↗

Liquid hydrogen mass flow through a multiple orifice Joule-Thomson device

Liquid hydrogen mass flow rate, pressure drop, and temperature drop data were obtained for a number of multiple orifice Joule-Thomson devices known as visco jets. The present investigation continues a study to develop an equation for predicting two phase flow of cryogens through these devices. The test apparatus design allowed isenthalpic expansion of the cryogen through the visco jets. The data covered a range of inlet and outlet operating conditions. The mass flow rate range single phase or two phase was 0.015 to 0.98 lbm/hr. The manufacturer's equation was found to overpredict the single phase hydrogen data by 10 percent and the two phase data by as much as 27 percent. Two modifications of the equation resulted in a data correlation that predicts both the single and two phase flow across the visco jet. The first modification was of a theoretical nature, and the second strictly empirical. The former reduced the spread in the two phase data. It was a multiplication factor of 1-X applied to the manufacturer's equation. The parameter X is the flow quality downstream of the visco jet based on isenthalpic expansion across the device. The latter modification was a 10 percent correction term that correlated 90 percent of the single and two phase data to within +/- 10 percent scatter band.

Papell, S. S.↗