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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 469 records · Page 26
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Characterization of montmorillonite doped PVA/SA blends using X-ray diffraction

PVA films doped with Montmorillonite was prepared by slow evaporation technique. These films have been used to record X-ray patterns at room temperature. Correlation lengths and microstructural parameters were computed using in-house program employing X-ray data. Results show that correlation lengths as well as crystallite size increases with increase in the concentration of Montmorillonite which is inconformity with the conductivity studies.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Morphology and structure evolution of tin-doped indium oxide thin films deposited by radio-frequency magnetron sputtering: The role of the sputtering atmosphere

The microstructure and morphology evolution of tin-doped indium oxide (ITO) thin films deposited by radio-frequency magnetron sputtering in different sputtering atmospheres were investigated by X-ray diffraction, X-ray reflectivity, and atomic force microscopy. The surface roughness w increases with increasing film thickness d{sub f}, and exhibits a power law behavior w ∼ d{sub f}{sup β}. The roughness decreases with increasing O{sub 2} flow, while it increases with increasing H{sub 2} flow. The growth exponent β is found to be 0.35, 0.75, and 0.98 for depositions in Ar/10%O{sub 2}, pure Ar, and Ar/10%H{sub 2} atmospheres, respectively. The correlation length ξ increases with film thickness also with a power law according to ξ ∼ d{sub f}{sup z} with exponents z = 0.36, 0.44, and 0.57 for these three different gas atmospheres, respectively. A combination of local and non-local growth modes in 2 + 1 dimensions is discussed for the ITO growth in this work.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Structural evolution of Ge-rich Si{sub 1−x}Ge{sub x} films deposited by jet-ICPCVD

Amorphous Ge-rich Si{sub 1−x}Ge{sub x} films with local Ge-clustering were deposited by dual-source jet-type inductively coupled plasma chemical-vapor deposition (jet-ICPCVD). The structural evolution of the deposited films annealed at various temperatures (Ta) is investigated. Experimental results indicate that the crystallization occurs to form Ge and Si clusters as Ta = 500 °C. With raising Ta up to 900 °C, Ge clusters percolate together and Si diffuses and redistributes to form a Ge/SiGe core/shell structure, and some Ge atoms partially diffuse to the surface as a result of segregation. The present work will be helpful in understanding the structural evolution process of a hybrid SiGe films and beneficial for further optimizing the microstructure and properties.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Combinatorial deposition of Au–Bi alloys via high-rate magnetron sputtering

Gold–bismuth (Au–Bi) alloy films are promising candidate materials for inertial confinement fusion (ICF) hohlraums due to their high laser-to-x-ray conversion efficiency, particularly compared with Au, Ta–Au, and Bi hohlraums. However, the fabrication of uniform and dense Au–Bi alloy films remains a challenge. Here, we use a combination of Monte-Carlo modeling and experiments to demonstrate that the microstructure and properties of Au–Bi alloy films can be greatly improved when direct-current magnetron sputtering with high deposition rates of ⩾5 μm h -1 is used. Resultant films are ~90% of their maximum theoretical densities and have low O content of <1 at.%. Films with Bi content above 40 at. % exhibit high electrical resistivity >100μΩ cm, making them suitable for both magnetized and non-magnetized ICF schemes.

Materials science↗
DOE OSTI2015

A review of molecular beam epitaxy of ferroelectric BaTiO 3 films on Si, Ge and GaAs substrates and their applications

SrTiO 3 epitaxial growth by molecular beam epitaxy (MBE) on silicon has opened up the route to the monolithic integration of various complex oxides on the complementary metal-oxide-semiconductor silicon platform. Among functional oxides, ferroelectric perovskite oxides offer promising perspectives to improve or add functionalities on-chip. We review the growth by MBE of the ferroelectric compound BaTiO 3 on silicon (Si), germanium (Ge) and gallium arsenide (GaAs) and we discuss the film properties in terms of crystalline structure, microstructure and ferroelectricity. Lastly, we review the last developments in two areas of interest for the applications of BaTiO 3 films on silicon, namely integrated photonics, which benefits from the large Pockels effect of BaTiO 3 , and low power logic devices, which may benefit from the negative capacitance of the ferroelectric.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Dependence of the colored frequency noise in spin torque oscillators on current and magnetic field

The nano-scale spin torque oscillator (STO) is a compelling device for on-chip, highly tunable microwave frequency signal generation. Currently, one of the most important challenges for the STO is to increase its longer-time frequency stability by decreasing the 1/f frequency noise, but its high level makes even its measurement impossible using the phase noise mode of spectrum analyzers. Here, we present a custom made time-domain measurement system with 150 MHz measurement bandwidth making possible the investigation of the variation of the 1/f as well as the white frequency noise in a STO over a large set of operating points covering 18–25 GHz. The 1/f level is found to be highly dependent on the oscillation amplitude-frequency non-linearity and the vicinity of unexcited oscillation modes. These findings elucidate the need for a quantitative theoretical treatment of the low-frequency, colored frequency noise in STOs. Based on the results, we suggest that the 1/f frequency noise possibly can be decreased by improving the microstructural quality of the metallic thin films.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

Understanding Film Formation Morphology and Orientation in High Member 2D Ruddlesden-Popper Perovskites for High-Efficiency Solar Cells

We report that 2D Ruddlesden–Popper (RP) perovskites have recently emerged as promising candidates for hybrid perovskite photovoltaic cells, realizing power-conversion efficiencies (PCEs) of over 10% with technologically relevant stability. To achieve solar cell performance comparable to the state-of-the-art 3D perovskite cells, it is highly desirable to increase the conductivity and lower the optical bandgap for enhanced near-IR region absorption by increasing the perovskite slab thickness. Here, the use of the 2D higher member (n = 5) RP perovskite (n-butyl-NH 3 ) 2 (MeNH 3 ) 4 Pb 5 I 16 in depositing highly oriented thin films from dimethylformamide/dimethylsulfoxide mixtures using the hot-casting method is reported. In addition, they exhibit superior environmental stability over thin films of their 3D counterpart. These films are assembled into high-efficiency solar cells with an open-circuit voltage of ≈1 V and PCE of up to 10%. This is achieved by fine-tuning the solvent ratio, crystal growth orientation, and grain size in the thin films. Finally, the enhanced performance of the optimized devices is ascribed to the growth of micrometer-sized grains as opposed to more typically obtained nanometer grain size and highly crystalline, densely packed microstructures with the majority of the inorganic slabs preferentially aligned out of plane to the substrate, as confirmed by X-ray diffraction and grazing-incidence wide-angle X-ray scattering mapping.

14 SOLAR ENERGY↗
DOE OSTI2016

Impacts of Ion Segregation on Local Optical Properties in Mixed Halide Perovskite Films

Despite the recent astronomical success of organic–inorganic perovskite solar cells (PSCs), the impact of microscale film inhomogeneities on device performance remains poorly understood. In this work, we study CH 3 NH 3 PbI 3 perovskite films using cathodoluminescence in scanning transmission electron microscopy and show that localized regions with increased cathodoluminescence intensity correspond to iodide-enriched regions. These observations constitute direct evidence that nanoscale stoichiometric variations produce corresponding inhomogeneities in film cathodoluminescence intensity. Furthermore, we observe the emergence of high-energy transitions attributed to beam induced iodide segregation, which may mirror the effects of ion migration during PSC operation. Our results demonstrate that such ion segregation can fundamentally change the local optical and microstructural properties of organic–inorganic perovskite films in the course of normal device operation and thus address the observed complex and unpredictable behavior in PSC devices.

36 MATERIALS SCIENCE↗
NASA NTRS1990

The effect of temperature cycling typical of low earth orbit satellites on thin films of YBa2Cu3O(7-x)

The refrigeration of superconductors in space poses a challenging problem. The problem could be less severe if superconducting materials would not have to be cooled when not in use. Thin films of the YBa2Cu3O(7-x) (YBCO) superconductor were subjected to thermal cycling, which was carried out to simulate a large number of eclipses of a low earth orbit satellite. Electrical measurements were performed to find the effect of the temperature cycling. Thin films of YBCO were formed by coevaporation of Y, BaF2, and Cu and postannealing in wet oxygen at 850 C for 3.5 h. The substrates used were (100) SrTiO3, polycrystalline alumina, and oxidized silicon; the last two have an evaporated zirconia layer. Processing and microstructure studies of these types of films have been published. THe zero resistance transition temperatures of the samples used in this study were 91, 82, and 86 K, respectively. The samples were characterized by four point probe electrical measurements as a function of temperature. The parameters measured were: the zero resistance transition temperature, the 10 to 90 percent transition width, and the room temperature resistance, normalized to that measured before temperature cycling. The results for two samples are presented. Each sample had a cumulative exposure. Cycling in atmospheric pressure nitrogen was performed at a rate of about 60 cycles per day, whereas in vacuum the rate was only about 10 cycles per day. The results indicate only little or no changes in the parameters measured. Degradation of superconducting thin films of YBCO has been reported due to storage in nitrogen. It is believed that the relatively good performance of films after temperature cycling is related to the fact that BaF2 was used as an evaporation source. The latest result on extended temperature cycling indicates significant degradation. Further tests of extended cycling will be carried out to provide additional data and to clarify this preliminary finding.

Mogro-Campero, A.↗
DOE OSTI2017

Solid state dewetting of thin plasmonic films under focused cw-laser irradiation

Elevated temperatures and large thermal gradients are a significant source of component failure in microelectronics, and is the limiting factor in heat-assisted magnetic recording (HAMR). Here, we have investigated the effect of solid-state dewetting in Au thin films, as a function of local temperature, film thickness, and substrate adhesion. In this work, a localised temperature rise is induced in thin (≤ 50 nm) polycrystalline Au films on SiO 2 substrates via focused continuous-wave laser irradiation at 488 nm. The magnitude and distribution of the total temperature rise is measured using CCD-based thermoreflectance. This also allows a sensitive measurement of the temperature at which dewetting occurs, showing that for thin (≤ 50 nm) Au films without adhesion layers, rapid dewetting can occur at temperatures as low as 50° C. The time decay of the reflected light from the illuminating laser is used to monitor locally the dynamics of solid state dewetting. TEM diffraction analysis shows significant changes in the microstructure and crystallographic texture of the films as far as 10 µm away from the illuminated area. The use of a thin metallic adhesion layer (such as Ti or Cr) is shown to significantly improve the adhesion of the Au to the substrate and reduce the tendency towards dewetting, but does not entirely protect it from changes to the crystallographic texture.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Interfacial design and strengthening mechanisms of AZ91 alloy reinforced with in-situ reduced graphene oxide

Highlights: • An in-situ process was developed to synthesize magnesium alloy composite reinforced by graphene. • Microstructure and phase composition of oxide films were investigated by OM, SEM, EDS and XRD analysis. • The interfacial structure of Mg composites reinforced with reduced graphene oxide was characterized. • The interfacial reaction mechanisms between GO (graphene oxide) and the Mg metal was studied. - Abstract: This work highlights to develop an in-situ process to disperse uniformly graphene possessing good interfacial bonds with the matrix of Mg alloy. A homogeneous distribution of graphene in the matrix has been successfully obtained through in-situ reduction of graphene oxide (RGO) by sintering process after the graphene oxide (GO) was uniformly dispersed in AZ91 powders. The interface product nano-sized MgO can significantly improve the interfacial bonding strength between RGO and α-Mg with analysis by transmission electron microscopy. The orientation relationships of ( 2-bar 00){sub MgO}//( 1-bar 10 2-bar ){sub α‐Mg} and [011]{sub MgO}//[2 4-bar 2 3-bar ]{sub α‐Mg} with the semi-coherent interface characteristics were clarified for the first time at the interface of MgO/α-Mg, suggesting a good lattice space matching. By employing such process, a composite containing 0.5 wt% of GO shows an 85.7% and 61.4% increase in yield strength and elongation, respectively, over unreinforced AZ91 alloy. The underlying strengthening mechanisms of in-situ reduced graphene oxide are discussed in detail.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
NASA NTRS2003

Correlation of Radiation Dosage With Mechanical Properties of Thin Films

The objective of this investigation was to examine the relationship between irradiation level (proton dose), microstructure, and stress levels in chemical vapor deposited diamond and polysilicon film using crosssectioned specimens. However, the emphasis was placed on the diamond specimen because diamond holds much promise for use in advanced technologies. The use of protons allows not only the study of the charged particle that may cause the most microstructural damage in Earth-orbit microelectromechanical systems (MEMS) devices, but also allows the study of relatively deeply buried damage inside the diamond material. Using protons allows these studies without having to resort to megaelectronvolt implant energies that may create extensive damage due to the high energy that is needed for the implantation process. Since 1 MEMS devices operating in space will not have an opportunity to reverse radiation damage via annealing, only nonannealed specimens were investigated. The following three high spatial resolution techniques were used to examine these relationships: (I) Scanning electron microscopy, (2) micro-Raman spectroscopy, and (3) micro x-ray diffraction.

Newton, R. L.↗
DOE OSTI2024

Direct measurement of microwave loss in Nb films for superconducting qubits

Niobium films are a key component in modern two-dimensional superconducting qubits, yet their contribution to the total qubit decay rate is not fully understood. The presence of different layers of materials and interfaces makes it difficult to identify the dominant loss channels in present two-dimensional qubit designs. In this paper, we present the study that directly correlates measurements of RF losses in such films to material parameters by investigating a high-power impulse magnetron sputtered (HiPIMS) film atop a three-dimensional niobium superconducting radio frequency (SRF) resonator. By using a 3D SRF structure, we are able to isolate the niobium film loss from other contributions. Our findings indicate that microwave dissipation in the HiPIMS-prepared niobium films, within the quantum regime, resembles that of record-high intrinsic quality factor of bulk niobium SRF cavities, with lifetimes extending into seconds. Microstructure and impurity level of the niobium film do not significantly affect the losses. These results set the scale of microwave losses in niobium films and show that niobium losses do not dominate the observed coherence times in present two-dimensional superconducting qubit designs, instead highlighting the dominant role of the dielectric oxide in limiting the performance. We can also set a bound for when niobium film losses will become a limitation for qubit lifetimes.

Abdisatarov, B.↗
DOE OSTI2018

Reinforcing blade-cast photocatalytic-titania thin film by titanate nanotubes

Highlights: • Suspension-based photocatalysts are inferior to thin-films due to separation issues. • Hydrothermal TiO{sub 2} nanotubes and sol-gel Ti(n-OBu){sub 4} blends were tape casted on glass. • Optimum blend composition yields mechanical stability due to the tubes reinforcing effect. • At optimum gel content the nanotube bundles are smoothed without stabilizers added. • Surface accessibility and mass transfer dominate the photocatalytic dye degradation. - Abstract: Titanate nanotubes/titania gel blends were prepared as composite sol-gel material, deposited on a glass substrate using a doctor blade and calcined in order to create thin films. In order to get an insight in titania nanotubes’ ability to reinforce thin films, drying control chemical agents were not used. The effects of titanate nanotubes to titanium n-butoxide ratio on surface morphology, phase composition, mechanical stability and photocatalytic activity were studied. Characterization of the thin films was carried out by means of optical and scanning electron microscopy, powder X-ray diffraction, synchrotron radiation grazing incidence X-ray diffraction and mechanical stability testing. Photocatalytic properties of the obtained thin films were evaluated on the basis of methylene blue degradation. Moderate blends exhibit favourable microstructural features while the dye degradation rate was greater for films with a greater amount of titanate nanotubes.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2016

Thickness and microstructure characterization of TGO in thermal barrier coatings by 3D reconstruction

Yttria-stabilized zirconia (YSZ) thermal barrier coatings (TBCs) are prepared by plasma spraying. Thermally grown oxide (TGO) would be formed between YSZ topcoat and bond coat after 50 h thermal service for YSZ TBCs. The electron back scattered diffraction (EBSD) results reveal that the TGO layer is composed of α-Al{sub 2}O{sub 3} and cubic Al{sub 2}NiO{sub 4} layers. Measured values of TGO thickness from the 2D-SEM image are greater than or equal to its real thickness due to the fact that the TGO layer is much rolling so that up and down surfaces of the TGO can't be completely perpendicular to the cross-section direction confirmed by 3D-SEM. Furthermore, 3D-SEM results reveal that the real thickness of TGO layer is 3.10 μm instead of 7.1 μm. In addition, 3D-EBSD confirmed that α-Al{sub 2}O{sub 3} layer in TGO is composed of single layer of grains and Al{sub 2}NiO{sub 4} layer consist of multilayer of grains while α-Al{sub 2}O{sub 3} layer is mixed with single layer and multilayer of α-Al{sub 2}O{sub 3} grains from observation of the 2D-EBSD image. It provides a new method to characterize real thickness and microstructure of TGO, which is also applied to other film materials. - Highlights: •This work provides a new method to measure the real thickness of TGO. •YSZ TBCs were prepared by plasma spraying. •TGO is formed in TBCs by simulating thermal service at 1100 °C for 50 h. •Real thickness and microstructure of TGO were investigated by 3D reconstruction.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Study of the Electrical and Diffusion Barrier Properties in Ultrathin Carbon Film-Coated Copper Microwires for Interconnects

Four specimen patterns with the microstructure of a microcopper wire are deposited on the Si-wafer substrate plus thermal oxide (SiO{sub 2}) film as the top layer. Each pattern was prepared to have two kinds of specimens, including with and without ultrathin carbon film between the copper wire and the top layer (SiO{sub 2}). The effect of carbon film on electrical properties is evaluated via the measurements of the I (current)–V (voltage) curve, sheet electrical resistance, current leakage, and its ratio and effective permittivity. A rapid thermal annealing (RTA) technique is provided as an economic and efficient method to grow the ultrathin carbon film rapidly as the interlayer. Appropriate choices of 900 °C and 3 min as the annealing temperature and time can produce ultrathin carbon film with nearly 100% coverage of the copper surface. The sheet resistance of specimen demonstrates the behavior exactly opposite to that of the carbon film coverage of wire surface. The combined effect of elevating the voltage and annealing temperature of the specimen with carbon film on the current leakage is much lower than that arising in the specimen without carbon film, so long as the carbon films operating at that temperature (between 350 and 500 °C) are still sustainable. The differences in current leakage and effective permittivity between these two kinds of specimen are significantly increased by raising the temperature. The intensity (IC) of copper diffusions into the SiO{sub 2} layer in the specimens with the carbon film demonstrates behavior similar to that of current leakage (CL). The IC and CL values for the temperatures ≦ 350 °C are much lower than those obtained at 500 °C.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Unexpected magnetization enhancement in hydrogen plasma treated ferromagnetic (Zn,Cu)O film

The effects of H{sup +} incorporation on oxygen vacancies (H{sub O}{sup +}) on the giant ferromagnetic behavior (moment up to 3.26 μ{sub B}/Cu) in ZnO:Cu polycrystalline films have been closely examined using different microstructural and magnetic characterization tools. Fine thermal stability (up to 450 °C) and low resistivity demonstrate a significant correlation between Cu 3d-states and H{sub O}{sup +} donor defects in H plasma treated ZnO:Cu films, analogous to dual-donor (V{sub O} and Zn{sub i}) defects mediated case. These H{sub O}{sup +} donors can delocalize their electrons to the orbits of Cu atoms and contribute to a stronger spin-orbit coupling interaction. Suitable H{sub O}{sup +} defect concentration and matched proportion between Cu{sup 2+} and Cu{sup +} species ensure that orbital momentum shall not be quenched. Hence, unexpected moment enhancement, less than spin-orbit coupling upper limit (3.55 μ{sub B}/Cu), can be also expected in this scenario. The manipulation from spin-only to spin-orbit coupling mode, using a facile thermally-mediated H plasma exposure way, will allow achieving spin transport based diluted magnetic semiconductor device.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗