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ELECTROPHYSICAL PROPERTIES OF CD0.96MN0.04TE0.96SE0.04CRYSTALS AND SURFACE-BARRIER DIODES
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Si-based CTE-matched substrate for laser diode packaging
A Cu—Si—Cu substrate having a silicon substrate, copper plating on opposite sides of the silicon substrate, and copper vias extending thru the silicon substrate to electrically and thermally connect the copper platings together. The thicknesses of the silicon substrate and the copper platings are selected so that a coefficient of thermal expansion (CTE) of the Cu—Si—Cu substrate is substantially the same as a CTE of a material to be mounted on the Cu—Si—Cu substrate.
GaN-based threshold switching device and memory diode
A switching device including a GaN substrate; an unintentionally doped GaN layer on a first surface of the GaN substrate; a regrown unintentionally doped GaN layer on the unintentionally doped GaN layer; a regrowth interface between the unintentionally doped GaN layer and the regrown unintentionally doped GaN layer; a p-GaN layer on the regrown unintentionally doped GaN layer; a first electrode on the p-GaN layer; and a second electrode on a second surface of the GaN substrate.
System and method for high power diode based additive manufacturing
The present disclosure relates to a system for performing an Additive Manufacturing (AM) fabrication process on a powdered material (PM) forming a substrate. The system uses a first optical subsystem to generate an optical signal comprised of electromagnetic (EM) radiation sufficient to melt or sinter a PM of the substrate. The first optical subsystem is controlled to generate a plurality of different power density levels, with a specific one being selected based on a specific PM forming a powder bed being used to form a 3D part. At least one processor controls the first optical subsystem and adjusts a power density level of the optical signal, taking into account a composition of the PM. A second optical subsystem receives the optical signal from the first optical subsystem and controls the optical signal to help facilitate melting of the PM in a layer-by-layer sequence of operations.
Metasurface-Coupled Avalanche Photo Diode
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Hole-blocking materials for organic light emitting diodes
An organic light emitting device including an emissive layer including a blue phosphorescent emitter, an electron transport layer, and a hole blocking layer between the emissive layer and the electron transport layer, wherein the hole blocking layer comprises a tetradentate palladium complex.
Sensitive and robust thin film X-ray detector using 2D layered perovskite diodes
A radiation detector includes a p-i-n architecture including a p-type contact layer, an n-type contact layer, and an intrinsic layer between the p-type contact layer and the n-type contact layer. The intrinsic layer includes a thin film comprising a highly crystalline 2D layered perovskite material. The radiation detectors according to embodiments of the present disclosure generate high open circuit voltages, have good detecting photon density limits and high sensitivities, and can be self-powered.
Medium-Voltage Vertical GaN PiN Diodes for Fast Grid Protection.
Abstract not provided.
Foundry Manufacturing of Medium-Voltage Vertical GaN PiN Diodes.
Abstract not provided.
Medium-Voltage Vertical GaN PiN Diodes for Fast Grid Protection.
Abstract not provided.
Foundry Manufacuring of Medium-Voltage Vertical GaN PiN Diodes.
Abstract not provided.
High Voltage Regrown GaN P-N Diodes Enabled by Defect and Doping.
Abstract not provided.
Laser diode drivers for rep-rated DELPHI laser system
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Determination of Laser Diode Nonradiative CarrierLifetimes using Subthreshold Power-Current-VoltageCharacteristics
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Space charge trap-assisted recombination suppressing layer for low-voltage diode operation
Shockley-Read-Hall (SRH) generation and/or recombination in heterojunction devices is suppressed by unconventional doping at or near the heterointerface. The effect of this doping is to shift SRH generation and/or recombination preferentially into the wider band gap material of the heterojunction. This reduces total SRH generation and/or recombination in the device by decreasing the intrinsic carrier concentration ni at locations where most of the SRH generation and/or recombination occurs. The physical basis for this effect is that the SRH generation and/or recombination rate tends to decrease as ni around the depletion region decreases, so decreasing the effective ni in this manner is a way to decrease SRH recombination.
Laser Beam Induced Current for Defect Concentration and Aging Analysis of Broad Area Laser Diodes
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Thermal Management of Discretized Heaters Using CuW Microchannel Heat Sinks and FC3283 for Laser Diode Applications
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