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At least 451 records · Page 25

Thermoelectric properties of BiSbTe-type alloys prepared by chill-casting and cryo-milling

The thermoelectric properties of Bi x Sb 1-x Te 3 processed through milling have been extensively studied with varied results that needs to be rationalized. Since cryo-milling is a relatively cleaner milling process compared to other milling processes, in this study we explore this technique to reduce the particle size prior to compaction to get an insight into the thermoelectric properties. We first report the results of cryomilled BiSbTe 3 compacted by spark plasmas sintering (SPS) process and show that milling leads to a change in transport behavior from ‘p’ to ‘n’ type similar to that reported for Bi 2 Te 3 . It is shown that the defects induced by milling is responsible for this change in materials behavior. We further study the effect of change in Bi to Sb ratio and excess tellurium on the thermoelectric properties when processed through cryo-milling as well as casting using a chilled copper block. Excess tellurium leads to a microstructure containing a fraction of layered eutectic that gets further fragmented during cryo-milling. Although the Seebeck coefficient does not change significantly, reflecting the cleanliness of the process, the thermal conductivity changes during hot compaction leading to an improvement of ZT. However, a comparison of all the reported results does not reveal any systematics in thermoelectric properties reflecting the difficulties with these materials.

36 MATERIALS SCIENCE↗

AI‐Driven Defect Engineering for Advanced Thermoelectric Materials

Thermoelectric materials offer a promising pathway to directly convert waste heat to electricity. However, achieving high performance remains challenging due to intrinsic trade-offs between electrical conductivity, the Seebeck coefficient, and thermal conductivity, which are further complicated by the presence of defects. This review explores how artificial intelligence (AI) and machine learning (ML) are transforming thermoelectric materials design. Advanced ML approaches including deep neural networks, graph-based models, and transformer architectures, integrated with high-throughput simulations and growing databases, effectively capture structure-property relationships in a complex multiscale defect space and overcome the “curse of dimensionality”. This review discusses AI-enhanced defect engineering strategies such as composition optimization, entropy and dislocation engineering, and grain boundary design, along with emerging inverse design techniques for generating materials with targeted properties. Finally, it outlines future opportunities in novel physics mechanisms and sustainability, highlighting the critical role of AI in accelerating the discovery of thermoelectric materials.

36 MATERIALS SCIENCE↗

Hyperbolic enhancement of photocurrent patterns in minimally twisted bilayer graphene

Quasi-periodic moiré patterns and their effect on electronic properties of twisted bilayer graphene have been intensely studied. At small twist angle θ, due to atomic reconstruction, the moiré superlattice morphs into a network of narrow domain walls separating micron-scale AB and BA stacking regions. We use scanning probe photocurrent imaging to resolve nanoscale variations of the Seebeck coefficient occurring at these domain walls. The observed features become enhanced in a range of mid-infrared frequencies where the hexagonal boron nitride substrate is optically hyperbolic. Our results illustrate the capabilities of the nano-photocurrent technique for probing nanoscale electronic inhomogeneities in two-dimensional materials.

42 ENGINEERING↗

Electronic and thermoelectric properties of van der Waals materials with ring-shaped valence bands

The valence band of a variety of few-layer, two-dimensional materials consist of a ring of states in the Brillouin zone. The energy-momentum relation has the form of a “Mexican hat” or a Rashba dispersion. The two-dimensional density of states is singular at or near the band edge, and the band-edge density of modes turns on nearly abruptly as a step function. The large band-edge density of modes enhances the Seebeck coefficient, the power factor, and the thermoelectric figure of merit ZT. Electronic and thermoelectric properties are determined from ab initio calculations for few-layer III–VI materials GaS, GaSe, InS, InSe, for Bi{sub 2}Se{sub 3}, for monolayer Bi, and for bilayer graphene as a function of vertical field. The effect of interlayer coupling on these properties in few-layer III–VI materials and Bi{sub 2}Se{sub 3} is described. Analytical models provide insight into the layer dependent trends that are relatively consistent for all of these few-layer materials. Vertically biased bilayer graphene could serve as an experimental test-bed for measuring these effects.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Effect of Oxygen Pressure on Thermoelectric Properties of p-Type CuAlO{sub 2} Films Fabricated by Pulsed Laser Deposition

We focus on the growth of p-type CuAlO{sub 2} thin films and its thermoelectric properties. Thin films are deposited by pulsed laser deposition technique on single-crystal sapphire substrates varying the oxygen partial pressure. Thin film deposited at oxygen partial pressure of 200 mTorr presents bigger grains (about 10 μm in size) and shows Seebeck coefficient as high as 270 µV/K with a conductivity of about 0.8 S/cm so that its power factor is about 5.7 µW/mK{sup 2} at 800 K, twice than observed in the film deposited at 60 mTorr of oxygen.

36 MATERIALS SCIENCE↗

The effect of shallow vs. deep level doping on the performance of thermoelectric materials

It is well known that the efficiency of a good thermoelectric material should be optimized with respect to doping concentration. However, much less attention has been paid to the optimization of the dopant’s energy level. Thermoelectric materials doped with shallow levels may experience a dramatic reduction in their figures of merit at high temperatures due to the excitation of minority carriers that reduces the Seebeck coefficient and increases bipolar heat conduction. Doping with deep level impurities can delay the excitation of minority carriers as it requires a higher temperature to ionize all dopants. We find through modeling that, depending on the material type and temperature range of operation, different impurity levels (shallow or deep) will be desired to optimize the efficiency of a thermoelectric material. For different materials, we further clarify where the most preferable position of the impurity level within the bandgap falls. In this work, our research provides insight on why different dopants often affect thermoelectric transport properties differently and directions in searching for the most appropriate dopants for a thermoelectric material in order to maximize the device efficiency.

36 MATERIALS SCIENCE↗

Effects of Pd substitution on the thermoelectric and electronic properties of delafossite Cu{sub 1−x}Pd{sub x}FeO{sub 2} (x=0.01, 0.03 and 0.05)

Cu{sub (1−x)}Pd{sub (x)}FeO{sub 2} (x=0.01, 0.03 and 005) delafossite was prepared by solid state reactions and was calcined/sintered at 1050 °C. The effect of Pd{sup 2+} substitution for the Cu{sup 1+} sites on the thermoelectric and electronic properties of Cu{sub (1−x)}Pd{sub (x)}FeO{sub 2} were investigated. The crystal structure, oxygen decomposition, thermoelectric and electronic properties were characterized by X-ray diffraction, thermogravimetric analysis, X-ray photoelectron spectroscopy (XPS), Seebeck coefficient, electrical conductivity and thermal conductivity measurements. The characterization showed that Cu{sub (1−x)}Pd{sub (x)}FeO{sub 2} formed a hexagonal delafossite structure with R3−m symmetry. The existence of Pd{sup 2+}, Cu{sup 1+}, Cu{sup 2+}, Fe{sup 3+}, Fe{sup 4+} and O was revealed from the XPS results. Confirmation of Pd{sup 2+} substitution for the Cu{sup 1+} sites occurred by increasing the c-axis in the lattice parameter with a Pd content. The O content intercalated at the center of the triangular Cu acted as a support to produce Cu{sup 2+} ions and was reduced with an increasing Pd content. The mixed valencies of Cu{sup 1+}/Cu{sup 2+} and Cu{sup 1+}/Pd{sup 2+} in the Cu layer changed the electrical conductivity and the Fe{sup 3+}/Fe{sup 4+} mixed valencies in the FeO{sub 6} layer caused the Seebeck coefficient to increase. Both the electrical conductivity and Seebeck coefficient for Pd contents of x=0.01 and 0.03 were higher than that of non-doped CuFeO{sub 2}. The low thermal conductivity of Cu{sub (1−x)}Pd{sub (x)}FeO{sub 2} resulted from the substitution of Pd, which has a large atomic mass, into structure. The Jonker plot indicated that the electronic properties displayed a degenerate density of states and that Cu{sub (1−x)}Pd{sub (x)}FeO{sub 2} was a semiconductor. A high ZT value of 0.055 was obtained for a Pd content of 0.03 at 950 K. The Pd{sup 2+} substitution for the Cu{sup 1+} sites influenced the thermoelectric and electronic properties of the delafossite Cu{sub (1−x)}Pd{sub (x)}FeO{sub 2} samples. - Graphical abstract: Cu{sub (1−x)}Pd{sub (x)}FeO{sub 2} (x=0.01, 0.03 and 005) delafossite was prepared by solid state reactions. The characterization showed that Cu{sub (1−x)}Pd{sub (x)}FeO{sub 2} formed a hexagonal delafossite structure with R3−m symmetry. The existence of Pd{sup 2+}, Cu{sup 1+}, Cu{sup 2+}, Fe{sup 3+}, Fe{sup 4+} and O was revealed from the XPS results. The O content intercalated at the center of the triangular Cu acted as a support to produce Cu{sup 2+} ions and was reduced with an increasing Pd content. The mixed valencies of Cu{sup 1+}/Cu{sup 2+} and Cu{sup 1+}/Pd{sup 2+} in the Cu layer changed the electrical conductivity and the Fe{sup 3+}/Fe{sup 4+} mixed valencies in the FeO{sub 6} layer caused the Seebeck coefficient to increase. Both the electrical conductivity and Seebeck coefficient for Pd contents of x=0.01 and 0.03 were higher than that of non-doped CuFeO{sub 2}. The low thermal conductivity of Cu{sub (1−x)}Pd{sub (x)}FeO{sub 2} resulted from the substitution of Pd, which has a large atomic mass, into structure. A high ZT value of 0.055 was obtained for a Pd content of 0.03 at 950 K. The Pd{sup 2+} substitution for the Cu{sup 1+} sites influenced the thermoelectric and electronic properties of the delafossite Cu{sub (1−x)}Pd{sub (x)}FeO{sub 2} samples. - Highlights: • New compound of Cu{sub 1−x}Pd{sub x}FeO{sub 2} (x=0.01, 0.03 and 0.05) forms phase of delafossite. • The compound displays p-type thermoelectric materials. • The Pd-substituted for Cu{sup 1+} sites forms Pd{sup 2+}. • Mixed valencies of Cu{sup +}/Cu{sup 2+}, Cu{sup +}/Pd{sup 2+} and Fe{sup 3+}/Fe{sup 4+} appear in the compound. • Large atomic mass of Pd-substituted causes low thermal conductivity.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Thermoelectric characteristic of the rough InN/GaN core-shell nanowires

An analysis to model the thermoelectric (TE) effects of the rough InN/GaN core-shell nanowires (NWs) with wire diameter ranging from 25 nm to 100 nm is proposed. The elastic continuum model is employed to calculate the phonon dispersion relation curves and the related phonon group velocity. Within the framework of Boltzmann transport equations and relaxation time approximation, the electrical conductivity, Seebeck coefficient, electronic thermal conductivity, and the lattice thermal conductivity is obtained. Simulation results indicate that TE properties of the rough InN/GaN core-shell NWs are strongly affected by the surface roughness and the diameter of NWs. The optimized condition of the proposed rough InN/GaN core-shell TE NWs is studied in this paper and the highest ZT obtained in the calculation is 0.8598 at 300 K and 1.713 at 1000 K.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Synthesis and characterization of Bi-doped Mg{sub 2}Si thermoelectric materials

The Mg{sub 2}Si-based alloys are promising candidates for thermoelectric energy conversion for the middle high range of temperature. They are very attractive as they could replace lead-based compounds due to their low cost and non toxicity. They could also result in thermoelectric generator weight reduction (a key feature for the automotive application field). The high value of thermal conductivity of the silicide-based materials could be reduced by increasing the phonon scattering in the presence of nanosized crystalline grains without heavily interfering with the electrical conductivity of the thermoelectric material. Nanostructured materials were obtained under inert atmosphere through ball milling, thermal treatment and spark plasma sintering processes. In particular, the role of several bismuth doping amounts in Mg{sub 2}Si were investigated (Mg{sub 2}Si:Bi=1:x for x=0.01, 0.02 and 0.04 M ratio). The morphology, the composition and the structure of the samples were characterized by FE-SEM, EDS and XRD analyses after each process step. Moreover, the Seebeck coefficient analyses at high temperature and the electrical and thermal conductivity of the samples are presented in this work. The nanostructuring processes were affect by the MgO amount increase which influenced the thermoelectric properties of the samples mainly by reducing the electrical conductivity. With the aim of further increasing the scattering phenomena by interface or boundary effect, carbon nanostructures named Single Wall Carbon Nanohorns were added to the Mg{sub 2}Si in order to produce a nanocomposite material. The influence of the nanostructured filler on the thermoelectric material properties is also discussed. - Graphical abstract: Figure of merit (ZT) of Bi-doped samples and undoped Mg{sub 2}Si. A maximum ZT value of 0.39 at 600 Degree-Sign C was obtained for the nanocomposite material obtained adding Single Wall Carbon Nanohorns to the Bi 0.02 at% doped silicide. Highlights: Black-Right-Pointing-Pointer Role of Bi doping amounts in Mg{sub 2}Si and thermoelectric characterization up to 600 Degree-Sign C Black-Right-Pointing-Pointer Nanocomposite materials synthesized by ball milling and Spark Plasma Sintering Black-Right-Pointing-Pointer Effect on scattering phenomena of Single Wall Carbon Nanohorns added to Mg{sub 2}Si Black-Right-Pointing-Pointer Importance of oxidation phenomena in nanostructured materials.

36 MATERIALS SCIENCE↗

Synthesis and characterization of antiperovskite nitrides GaNCr{sub 3−x}Mn{sub x}

The effects of Mn-doping on the crystal structure, magnetic and electrical/thermal transport properties of GaNCr{sub 3−x}Mn{sub x} (0≤x≤1.5) have been investigated systematically. As a result, the lattice constant and the residual resistivity increase, while the residual resistivity ratio, electron thermal conductivity, and room-temperature carrier concentration decrease with increasing Mn-doping level. The ground state of parent compound GaNCr{sub 3} is nonmagnetic, interestingly, the ferrimagnetism and antiferromagnetism are observed in Mn-doped samples GaNCr{sub 3−x}Mn{sub x}. Correspondingly, around the antiferromagnetic transition of GaNCr{sub 3−x}Mn{sub x} the correlation effect is studied. Furthermore, the analysis of thermal conductivity data suggests that the electron thermal conductivity plays a major role in total thermal conductivity of GaNCr{sub 3} at low temperatures, while the phonon thermal conductivity is dominant for Mn-doped GaNCr{sub 3} in the whole temperature of 5–330 K. The positive values of Seebeck coefficient and Hall coefficient indicate that the nature of charge carrier is hole-type in GaNCr{sub 3−x}Mn{sub x}. - Graphical abstract: The Rietveld refinement and structural properties of GaNCr{sub 3−x}Mn{sub x}. Display Omitted - Highlights: • Polycrystalline GaNCr{sub 3−x}Mn{sub x} are synthesized by using the solid state reaction method. • A good quality of samples is verified by Rietveld refinement and RRR values. • Antiferromagnetic and ferromagnetic competitions are induced by Mn-doping. • We present a comprehensive understanding of physical properties of GaNCr{sub 3−x}Mn{sub x}.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Optimization of Ca14MgSb11 through Chemical Substitutions on Sb Sites: Optimizing Seebeck Coefficient and Resistivity Simultaneously

In thermoelectric materials, chemical substitutions are widely used to optimize thermoelectric properties. The Zintl phase compound, Yb14MgSb11, has been demonstrated as a promising thermoelectric material at high temperatures. It is iso-structural with Ca14AlSb11 with space group I41/acd. Its iso-structural analog, Ca14MgSb11, was discovered to be a semiconductor and have vacancies on the Sb(3) sites, although in its nominal composition it can be described as consisting of fourteen Ca2+ cations with one [MgSb4]9− tetrahedron, one Sb37− linear anion and four isolated Sb3− anions (Sb(3) site) in one formula unit. When Sn substitutes Sb in Ca14MgSb11, optimized Seebeck coefficient and resistivity were achieved simultaneously although the Sn amount is small (<2%). This is difficult to achieve in thermoelectric materials as the Seebeck coefficient and resistivity are inversely related with respect to carrier concentration. Thermal conductivity of Ca14MgSb11-xSnx remains almost the same as Ca14MgSb11. The calculated zT value of Ca14MgSb10.80Sn0.20 reaches 0.49 at 1075 K, which is 53% higher than that of Ca14MgSb11 at the same temperature. The band structure of Ca14MgSb7Sn4 is calculated to simulate the effect of Sn substitutions. Compared to the band structure of Ca14MgSb11, the band gap of Ca14MgSb7Sn4 is smaller (0.2 eV) and the Fermi-level shifts into the valence band. The absolute values for density of states (DOS) of Ca14MgSb7Sn4 are smaller near the Fermi-level at the top of valence band and 5p-orbitals of Sn contribute most to the valence bands near the Fermi-level.

Hu, Yufei (ORCID:0000000308898786)↗

Distinct Impact of Alkali-Ion Doping on Electrical Transport Properties of Thermoelectric p -Type Polycrystalline SnSe

Recent findings about ultrahigh thermoelectric performance in SnSe single crystals have stimulated related research on this simple binary compound, which is focused mostly on its polycrystalline counterparts, and particularly on electrical property enhancement by effective doping. The work reported here systematically investigated the thermoelectric properties of polycrystalline SnSe doped with three alkali metals (Li, Na, and K). It is found that Na has the best doping efficiency, leading to an increase in hole concentration from 3.2 × 10 17 to 4.4 × 10 19 cm –3 at room temperature, accompanied by a drop in Seebeck coefficient from 480 to 142 μV/K. An equivalent single parabolic band model was found adequate to capture the variation tendency of Seebeck coefficient with doping levels within a wide range. A mixed scattering of carriers by acoustic phonons and grain boundaries is suitable for numerically understanding the temperature-dependence of carrier mobility. A maximum ZT of ~0.8 was achieved in 1% Na- or K-doped SnSe at 800 K. Possible strategies to improve the mobility and ZT of polycrystals were also proposed.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Phase Stability and Optoelectronic Properties of the Bixbyite Phase in the Gallium–Indium–Tin–Oxide System

X‐ray diffraction techniques were used to determine the phase boundaries of the In 2 O 3 solid solution phase in the Ga 2 O 3 – In 2 O 3 – SnO 2 ternary system. The effects of Ga and Sn content on the unit cell dimensions of the bixbyite phase were calculated by a linear regression fit, the results of which indicate the two substitutive cations have opposite and independent effects on the lattice parameter. These results suggest that the cations do not strongly interact with each other in the crystal. Measurements of optoelectronic properties were also taken on single‐phase bulk specimens within the solid solution to establish their dependence on composition. As anticipated, Sn doping yields corresponding increases in conductivity, reduction in the absolute value of Seebeck coefficient, and increase in optical band gap. In contrast, these properties are not significantly affected by varying Ga content, confirming that Ga behaves as an isovalent dopant at the low doping levels involved.

Dolgonos, Alex↗

High Thermoelectric Performance in Polycrystalline SnSe Via Dual-Doping with Ag/Na and Nanostructuring With Ag 8 SnSe 6

Single crystalline SnSe is one of the most intriguing new thermoelectric materials but the thermoelectric performance of polycrystalline SnSe seems to lag significantly compared to that of a single crystal. Here an effective strategy for enhancing the thermoelectric performance of p-type polycrystalline SnSe by Ag/Na dual-doping and Ag 8 SnSe 6 (STSe) nanoprecipitates is reported. The Ag/Na dual-doping leads to a two orders of magnitude increase in carrier concentration and a convergence of valence bands (VBM1 and VBM5), which in turn results in sharp enhancement of electrical conductivities and high Seebeck coefficients in the Ag/Na dual-doped samples. Additionally, the SnSe matrix becomes nanostructured with dispersed nanoprecipitates of the compound Ag 8 SnSe 6 , which further strengthens the scattering of phonons. Specifically, ≈20% reduction in the already ultralow lattice thermal conductivity is realized for the Sn 0.99 Na 0.01 Se–STSe sample at 773 K compared to the thermal conductivity of pure SnSe. Consequently, a peak thermoelectric figure of merit ZT of 1.33 at 773 K with a high average ZT (ZT ave ) value of 0.91 (423–823 K) is achieved for the Sn 0.99 Na 0.01 Se–STSe sample.

36 MATERIALS SCIENCE↗

Effects of partial La filling and Sb vacancy defects on CoS b 3 skutterudites

Over the past decade, the open frame ("cagey") structure of CoSb 3 skutterudite has invited intensive filling studies with various rare-earth elements for delivering state-of-the-art mid-temperature thermoelectric performance. In order to rationalize previously reported experimental results and provide new insight into the underexplored roles of La fillers and Sb vacancies, ab initio density functional theory studies, along with semi-classical Boltzmann transport theory calculations, are performed for pristine CoSb 3 of different lattice settings and La-filled CoSb 3 with and without Sb s mono- and di-vacancy defects. We examine the effects of van der Waals (vdW) interactions, spin-orbit coupling (SOC), spin polarization, partial La-filling, and Sb vacancy defects on the structural, electronic, and thermoelectric properties. The vdW interactions profoundly affect the lattice constant, which in turn affects the band gap. The SOC shows minor effects on the electronic and thermoelectric properties. The peculiar quasi-Dirac band in the pristine CoSb 3 largely survives La filling but not Sb vacancies, which instead introduce dispersive bands in the band gap region. Importantly, the band structure, density of states, and Fermi surface of La-filled CoSb 3 are significantly spin polarized, giving rise to spin-dependent thermoelectric properties. Seebeck coefficients directly calculated as a function of chemical potential are interpreted in connection with the electronic structures. Temperature-dependent Seebeck coefficients derived for the experimentally studied materials agree well with available experimental data. Seebeck coefficients obtained as a function of charge carrier concentration corroborate a thermoelectrically favorable role at high filling fractions played by the electron/hole pockets on the Fermi surface associated with the degenerate valleys/hills in the conduction/valence bands, respectively. Our results serve to advance the understanding of CoSb 3 skutterudite, a class of materials with important fundamental and application implications for thermoelectrics and spintronics.

36 MATERIALS SCIENCE↗

High thermoelectric figure of merit of porous Si nanowires from 300 to 700 K.

Thermoelectrics operating at high temperature can cost-effectively convert waste heat and compete with other zero-carbon technologies. Among different high-temperature thermoelectrics materials, silicon nanowires possess the combined attributes of cost effectiveness and mature manufacturing infrastructures. Despite significant breakthroughs in silicon nanowires based thermoelectrics for waste heat conversion, the figure of merit (ZT) or operating temperature has remained low. Here, we report the synthesis of large-area, wafer-scale arrays of porous silicon nanowires with ultra-thin Si crystallite size of ~4 nm. Concurrent measurements of thermal conductivity (κ), electrical conductivity (σ), and Seebeck coefficient (S) on the same nanowire show a ZT of 0.71 at 700 K, which is more than ~18 times higher than bulk Si. This ZT value is more than two times higher than any nanostructured Si-based thermoelectrics reported in the literature at 700 K. Experimental data and theoretical modeling demonstrate that this work has the potential to achieve a ZT of ~1 at 1000 K.

36 MATERIALS SCIENCE↗

Codoping in SnTe: Enhancement of Thermoelectric Performance through Synergy of Resonance Levels and Band Convergence

We report a significant enhancement of the thermoelectric performance of p-type SnTe over a broad temperature plateau with a peak ZT value of similar to 1.4 at 923 K through In/Cd codoping and a CdS nanostructuring approach. Indium and cadmium play different but complementary roles in modifying the valence band structure of SnTe. Specifically, In-doping introduces resonant levels inside the valence bands, leading to a considerably improved Seebeck coefficient at low temperature. Cd-doping, however, increases the Seebeck coefficient of SnTe remarkably in the mid- to high-temperature region via a convergence of the light and heavy hole bands and an enlargement of the band gap. Combining the two dopants in SnTe yields enhanced Seebeck coefficient and power factor over a wide temperature range due to the synergy of resonance levels and valence band convergence, as demonstrated by the Pisarenko plot and supported by first-principles band structure calculations. Moreover, these codoped samples can be hierarchically structured on all scales (atomic point defects by doping, nanoscale precipitations by CdS nanostructuring, and mesoscale grains by SPS treatment) to achieve highly effective phonon scattering leading to strongly reduced thermal conductivities. In addition to the high maximum ZT the resultant large average ZT of similar to 0.8 between 300 and 923 K makes SnTe an attractive p-type material for high-temperature thermoelectric power generation.

Tan, Gangjian↗