SEARCH · Engineering Papers
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Thin film transport in polymer dielectrics, fabrication of semiconductor devices having digital or discontinuous responses, and chemical vapor deposition of exotic dielectric films
Diffusion welding of large area silicon wafers without altering electrical properties of semiconductor devices in wafers
Transition metals improve the overall light output and the output in particular regions of the electroluminescent of a silicon carbide semiconductor device. These metals /impurities/ introduce levels that can be pumped electrically and affect the efficiency of the recombination process involved in emission of radiation.
Holographic microscopy for performance prediction and quality control of semiconductor devices and integrated circuits
Diamond scribing methods of separating semiconductor devices on silicon wafers
Computer aided network design course using FORTRAN 4 emphasizing modeling of semiconductor devices
Describing method for vapor deposition of gallium arsenide films to manganese substrates to provide semiconductor devices with low resistance substrates
Volume displacement transducer for leak detection in hermetically sealed semiconductor devices
Test chambers with orifice and helium mass spectrometer for detecting leak rate of encapsulated semiconductor devices
Auger electron velocity analyzer for use with scanning electron microscope to identify low concentrations of elements on surfaces of semiconductor devices
Evaluation of nondestructive tensile testing of chip and wire bonds in semiconductor devices
Scanning electron microscope for poor metallization detection in manufacturing cycle of semiconductor devices
New and highly sensitive method of detecting infrared irradiation makes possible solid state infrared detector which is more sensitive near room temperature than usual photoconductive low band gap semiconductor devices. Reconfiguration of high field domains in cadmium sulphide crystals provides basis for discovery.
The results of a series of experiments performed in the evaluation of nondestructive tensile testing of chip and wire bonds are presented. Semiconductor devices were subjected to time-temperature excursions, static-load life testing and multiple pre-stressing loads to determine the feasibility of a nondestructive tensile testing approach. The report emphasizes the importance of the breaking angle in determining the ultimate tensile strength of a wire bond, a factor not generally recognized nor implemented in such determinations.
The use of the scanning electron microscope to detect metallization defects introduced during batch processing of semiconductor devices is discussed. A method of determining metallization integrity was developed which culminates in a procurement specification using the scanning microscope on the production line as a quality control tool. Batch process control of the metallization operation is monitored early in the manufacturing cycle.
A technique was developed for preparing solid state, lithium-drifted silicon detectors. Hollow cylindrical detectors were built and tested for possible use as anticoincidence shields to replace conventional plastic scintillators and photomultipliers. A fission cell was developed for the Pioneer F/G instruments and the IMP I subsystem. An electron current detector was developed for Jovian belt measurements of electron flux. A number of circuits and semiconductor devices was also developed.
A stage and measuring microscope servocontrolled by a computer have been constructed. The travel of the stage is 0.5 x 0.5 m and the travel of the microscope objective is 7.5 cm. The measuring accuracy is 1 micron in the x-y plane and 5 microns along the z axis. The mechanical and optical construction of the stage and microscope, as well as the way in which the control electronics are organized, permit great flexibility of operation. Possible applications include the scanning and measuring of astronomical plates, the laying out of patterns of semiconductor devices of very large sizes, and the measurement of precision grids.
Failure rate for given semiconductor device is simply determined by reading value of normalized junction temperature from printout for any given combination of ambient temperature, stress ratio, and maximum rated junction temperature, and obtaining corresponding failure rate from graph.