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At least 433 records · Page 24

Spin–orbit torque switching of a ferromagnet with picosecond electrical pulses

The development of approaches that can efficiently control the magnetization of magnetic materials is central to the creation of fast and low-power spintronic devices. Spin transfer torque can be used to electrically manipulate magnetic order in devices, but is typically limited to nanosecond timescales. Alternatively, spin–orbit torque can be employed, and switching with current pulses down to ~200 ps has been demonstrated. However, the upper limit to magnetization switching speed remains unestablished. Here, we show that photoconductive switches can be used to apply 6-ps-wide electrical pulses and deterministically switch the out-of-plane magnetization of a common thin cobalt film via spin–orbit torque. We probe the ultrafast magnetization dynamics due to spin–orbit torques with sub-picosecond resolution using the time-resolved magneto-optical Kerr effect (MOKE). We also estimate that the magnetization switching consumes less than 50 pJ in micrometre-sized devices.

42 ENGINEERING↗

Electronic and magnetic properties of iridium-based novel Heusler alloys

We report half-metallicity and magnetism including exchange splitting are the most significant physical parameters to predict and design a candidate material for spintronic applications. We report here an ab-initio investigation on chemical formation and dynamical stability along with electronic structure and magnetic properties of Ir 2 Cr (Si, Ge) and IrRhCr (Si, Ge) Heusler alloys. The negative formation and cohesive energies with positive phonon dispersions confirm the stabilities of these alloys. Electronic structure calculations reveal that Ir 2 Cr (Si, Ge) and IrRhCrSi alloys are half-metallic ferromagnets with unprecedented exchange splitting. In addition, IrRhCrGe also shows semi-metallic nature. All of these materials follow Slater Pauling rule with large magnetic moments and 100% spin-polarization. With Cr bearing the majority of the local magnetic moment and exchange splitting, a ferromagnetic state is more stable than a nonmagnetic state. The electronic charge distribution and population analysis confirm mixed ionic and covalent bonding. The magnetocrystalline anisotropy energy, with the easy magnetization along the [1 1 1] direction, is significantly high in Ir 2 CrGe. Elastic constants such as shear (G), bulk (B), Young’s moduli, and Poisson’s ratio indicate that the IrRhCrSi and IrRhCrGe alloys are mechanically stable, and Ir 2 CrSi and Ir 2 CrGe are mechanically unstable. The Pugh’s (B/G) and Poisson’s ratios confirm that the stable alloys are ductile.

36 MATERIALS SCIENCE↗

Pressure-tuning of the electronic and magnetic properties of EuPt 2 Si 2

Using the element and orbital selectivity of x-ray absorption spectroscopy at Eu and Pt L 3 edges we investigate the effects of the lattice contraction, induced by temperature and external pressure, on the magnetic and electronic properties of the EuPt 2 Si 2 system. Our findings point to a clear relationship between the volume and the Eu valence in this material. From XANES experiments as a function of pressure we show that the Europium valence tends to stabilize at 3+ for pressures up to 27 GPa. The XMCD results demonstrate that pressure induced valence change of the Europium ion leads to a suppression of the magnetic ordering of the material. Finally, altogether our results provide direct evidence that Eu-4f /5d electronic hybridization effects underlie the mechanism that regulates the valence and magnetic ordering in this material.

36 MATERIALS SCIENCE↗

Chemical Bonding Governs Complex Magnetism in MnPt 5 P

Subtle changes in chemical bonds may result in dramatic revolutions in magnetic properties in solid-state materials. MnPt 5 P, a derivative of the rare-earth-free ferromagnetic MnPt 5 As, was discovered and is presented in this work. Specifically, MnPt 5 P was synthesized, and its crystal structure and chemical composition were characterized by X-ray diffraction as well as energy-dispersive X-ray spectroscopy. Accordingly, MnPt 5 P crystallizes in the layered tetragonal structure with the space group P4/mmm (No. 123), in which the face-shared Mn@Pt 12 polyhedral layers are separated by P layers. In contrast to the ferromagnetism observed in MnPt 5 As, the magnetic properties measurements on MnPt 5 P show antiferromagnetic ordering occurs at ~188 K with a strong magnetic anisotropy in and out of the ab-plane. Moreover, a spin-flop transition appears when a high magnetic field is applied. An A-type antiferromagnetic structure was obtained from the analysis of powder neutron diffraction (PND) patterns collected at 150 and 9 K. Calculated electronic structures imply that hybridization of Mn-3d and Pt-5d orbitals is critical for both the structural stability and observed magnetic properties. Semiempirical molecular orbitals calculations on both MnPt 5 P and MnPt 5 As indicate that the lack of 4p character on the P atoms at the highest occupied molecular orbital (HOMO) in MnPt 5 P may cause the different magnetic behavior in MnPt 5 P compared to MnPt 5 As. The discovery of MnPt 5 P, along with our previously reported MnPt5As, parametrizes the end points of a tunable system to study the chemical bonding which tunes the magnetic ordering from ferromagnetism to antiferromagnetism with the strong spin–orbit coupling (SOC) effect.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Magnetically dependent photovoltages in permalloy films and gratings

Significant photoinduced voltages observed in permalloy structures consist of two contributions with different origins, which depend on illumination conditions, structure geometry and magnetic field in distinct ways. The first component is the plasmon drag effect voltage closely associated with plasmon propagation. The second contribution is magnetically dependent and can be related to photoinduced gradients in the sample temperature and spin polarization. Possible mechanisms of the effect are discussed

36 MATERIALS SCIENCE↗

Ferromagnetic resonators synthesized by metal-organic decomposition epitaxy

Abstract Metal-organic decomposition epitaxy is an economical wet-chemical approach suitable to synthesize high-quality low-spin-damping films for resonator and oscillator applications. This work reports the temperature dependence of ferromagnetic resonances and associated structural and magnetic quantities of yttrium iron garnet nanofilms that coincide with single-crystal values. Despite imperfections originating from wet-chemical deposition and spin coating, the quality factor for out-of-plane and in-plane resonances approaches 600 and 1000, respectively, at room temperature and 40 GHz. These values increase with temperature and are 100 times larger than those offered by commercial devices based on complementary metal-oxide semiconductor voltage-controlled oscillators at comparable production costs.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Memristive Effects in Nanopatterned Permalloy Kagomé Array

Here, we study memristive effects in kagomé nanopatterned permalloy. We observe that at low frequencies a thermistor effect is present, a phenomenon arising due to the lithography and absent in similar experiments for thin films. However, we also show via an independent anisotropic magnetoresistive study that a small hysteresis accounting for 1% of the effect is not attributable to a thermistive effect. Such an effect is also confirmed by a careful subtraction scheme between nearby thermal hysteresis. In the millihertz regime, an effective model is provided to describe the experimental results for the thermistor, showing that there should be a crossover from the millihertz to the gigahertz, from a thermistor to a memristive effect for nanopatterned permalloy.

36 MATERIALS SCIENCE↗

Thermal Hall effect in a van der Waals triangular magnet FeCL 2

Thermal transport is a pivotal probe for studying low-energy, charge-neutral quasiparticles in insulating magnets. In this Letter, we report an observation of large magnetothermal conductivity and thermal Hall effect (THE) in a van der Waals antiferromagnet FeCl 2 . The magnetothermal conductivity reaches over ~700%, indicating strong magnon-phonon coupling. Furthermore, we find an appreciable thermal Hall signal which changes sign concurrently with the spin-flip transition from the antiferromagnetic state to the polarized ferromagnetic state. Our theoretical calculations suggest that, in addition to the Berry curvature induced at the anticrossing points of the hybridized magnon and acoustic phonon modes of FeCl 2 , other mechanisms are needed to account for the magnitude of the observed THE.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Error-Free and Current-Driven Synthetic Antiferromagnetic Domain Wall Memory Enabled by Channel Meandering

We propose a new type of energy-efficient multi-bit magnetic memory based on current-driven, field-free, controlled domain wall motion. A meandering domain wall channel with precisely interspersed pinning regions provides the multi-bit capability of a magnetic tunnel junction memory. The magnetic free layer of the memory device has perpendicular magnetic anisotropy (PMA) and interfacial Dzyaloshinskii-Moriya interaction (DMI) so that spin-orbit torques (SOTs) induce efficient domain wall motion. Using micromagnetic simulations, we find two different cell designs: two-way switching and four-way switching. The memory cell design choices and the physics of pinning mechanisms are discussed in detail. Furthermore, we show that switching reliability and speed may be significantly improved by replacing the ferromagnetic free layer with a synthetic antiferromagnetic (SAF) layer. Switching behavior and material choices will be discussed for the two memory implementations.

magnetic domain wall↗

Anisotropic MagnetoMemristance

Abstract In the last decade, nanoscale resistive devices with memory have been the subject of intense study because of their possible use in brain-inspired computing. However, operational endurance is one of the limiting factors in the adoption of such technology. For this reason, we discuss the emergence of current-induced memristance in magnetic materials, known for their durability. We show analytically and numerically that a single ferromagnetic layer can possess GHz memristance, due to a combination of two factors: a current-induced transfer of angular momentum (Zhang-Li torque) and the anisotropic magnetoresistance (AMR). We term the resulting effect the anisotropic magneto-memristance (AMM). We connect the AMM to the topology of the magnetization state, within a simple model of a one-dimensional annulus-shaped magnetic layer, confirming the analytical results with micromagnetic simulations for permalloy. Our results open a new path towards the realization of single-layer magnetic memristive devices operating at GHz frequencies.

97 MATHEMATICS AND COMPUTING↗

Pressure-induced suppression of ferromagnetism in the itinerant ferromagnet LaCrSb 3

We have performed an extensive pressure-dependent structural, spectroscopic, and electrical transport study of LaCrSb 3 . The ferromagnetic phase (TC=120 K at p = 0 GPa) is fully suppressed by p = 26.5 GPa and the Cr moment decreases steadily with increasing pressure. The unit-cell volume decreases smoothly up to p = 55 GPa. We find that the bulk modulus and suppression of the magnetism are in good agreement with theoretical predictions, but the Cr moment decreases smoothly with pressure, in contrast to steplike drops predicted by theory. The ferromagnetic ordering temperature appears to be driven by the Cr moment.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Circuit quantum electrodynamics detection of induced two-fold anisotropic pairing in a hybrid superconductor–ferromagnet bilayer

Abstract Hybrid systems represent one of the frontiers in the study of unconventional superconductivity and are a promising platform to realize topological superconducting states. These materials are challenging to probe using many conventional measurement techniques because of their mesoscopic dimensions, and therefore require new experimental probes so that they can be successfully characterized. Here, we demonstrate a probe that enables us to measure the superfluid density of micrometre-size superconductors using microwave techniques drawn from circuit quantum electrodynamics. We apply this technique to a superconductor–ferromagnet bilayer and find that the proximity-induced superfluid density is two-fold anisotropic within the plane of the sample. It also exhibits power-law temperature scaling that is indicative of a nodal superconducting state. These experimental results are consistent with the theoretically predicted signatures of induced triplet pairing with a nodal p -wave order parameter. Moreover, we observe modifications to the microwave response at frequencies near the ferromagnetic resonance, suggesting a coupling between the spin dynamics and induced superconducting order in the ferromagnetic layer. Our experimental technique can be employed more widely, for example to study fragile unconventional superconductivity in low-dimensional materials such as van der Waals heterostructures.

Bøttcher, C. G. L. (ORCID:0000000194898461)↗

Hard Ferromagnetism Down to the Thinnest Limit of Iron-Intercalated Tantalum Disulfide

Two-dimensional (2D) magnetic crystals hold promise for miniaturized and ultralow power electronic devices that exploit spin manipulation. In these materials, large, controllable magnetocrystalline anisotropy (MCA) is a prerequisite for the stabilization and manipulation of long-range magnetic order. In known 2D magnetic crystals, relatively weak MCA typically results in soft ferromagnetism. Furthermore, we demonstrate that ferromagnetic order persists down to the thinnest limit of Fe x TaS 2 (Fe-intercalated bilayer 2H-TaS 2 ) with giant coercivities up to 3 T. We prepare Fe-intercalated TaS 2 by chemical intercalation of van der Waals-layered 2H-TaS 2 crystals and perform variable-temperature transport, transmission electron microscopy, and confocal Raman spectroscopy measurements to shed new light on the coupled effects of dimensionality, degree of intercalation, and intercalant order/disorder on the hard ferromagnetic behavior of Fe x TaS 2 . More generally, we show that chemical intercalation gives access to a rich synthetic parameter space for low-dimensional magnets, in which magnetic properties can be tailored by the choice of the host material and intercalant identity/amount, in addition to the manifold distinctive degrees of freedom available in atomically thin, van der Waals crystals.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Direct‐Write Printed Contacts to Layered and 2D Materials

Advancements in fabrication methods have shaped new computing device technologies. Among these methods, depositing electrical contacts to the channel material is fundamental to device characterization. Novel layered and 2D materials are promising for next-generation computing electronic channel materials. Direct-write printing of conductive inks is introduced as a surprisingly effective, significantly faster, and cleaner method to contact different classes of layered materials, including graphene (semi-metal), MoS 2 (semiconductor), Bi-2212 (superconductor), and Fe 5 GeTe 2 (metallic ferromagnet). Based on the electrical response, the quality of the printed contacts is comparable to what is achievable with resist-based lithography techniques. These devices are tested by sweeping gate voltage, temperature, and magnetic field to show that the materials remain pristine post-processing. This work demonstrates that direct-write printing is an agile method for prototyping and characterizing the electrical properties of novel layered materials.

2D materials↗

Ultrafast Enhancement of Ferromagnetic Spin Exchange Induced by Ligand-to-Metal Charge Transfer

Here, we theoretically predict and experimentally demonstrate a nonthermal pathway to optically enhance superexchange interaction energies in a material based on exciting ligand-to-metal charge-transfer transitions, which introduces lower-order virtual hopping contributions that are absent in the ground state. We demonstrate this effect in the layered ferromagnetic insulator CrSiTe 3 by exciting Te-to-Cr charge-transfer transitions using ultrashort laser pulses and detecting coherent phonon oscillations that are impulsively generated by superexchange enhancement via magneto-elastic coupling. This mechanism kicks in below the temperature scale where short-range in-plane spin correlations begin to develop and disappears when the excitation energy is tuned away from the charge-transfer resonance, consistent with our predictions.

36 MATERIALS SCIENCE↗

Defect-mediated ferromagnetism in correlated two-dimensional transition metal phosphorus trisulfides

Controlling the magnetic spin states of two-dimensional (2D) van der Waals (vdW) materials with strong electronic or magnetic correlation is important for spintronic applications but challenging. Crystal defects that are often present in 2D materials such as transition metal phosphorus trisulfides (MPS 3 ) could influence their physical properties. Here, we report the effect of sulfur vacancies on the magnetic exchange interactions and spin ordering of few-layered vdW magnetic Ni 1-x Co x PS 3 nanosheets. Magnetic and structural characterization in corroboration with theoretical calculations reveal that sulfur vacancies effectively suppress the strong intralayer antiferromagnetic correlation, giving rise to a weak ferromagnetic ground state in Ni 1-x Co x PS 3 nanosheets. Notably, the magnetic field required to tune this ferromagnetic state (<300 Oe) is much lower than the value needed to tune a typical vdW antiferromagnet (> several thousand oersted). These findings provide a previously unexplored route for controlling competing correlated states and magnetic ordering by defect engineering in vdW materials.

36 MATERIALS SCIENCE↗

Competing and Anisotropic Exchange Interactions in the Kagome Lattice Ferromagnet Co 3 Sn 2 S 2

The kagome lattice ferromagnet, Co 3 Sn 2 S 2 , serves as template for a host of materials that exhibit exotic topological states, as well as a giant anomalous Hall state—a momentous realization in condensed matter physics. The anisotropic exchange interactions are probed by applying external magnetic fields in various directions along major crystal axes and the magneto-optical response is recorded. When magnetic fields are applied along the a–b plane, long-range magnetism forms and grows with increasing temperature. This counterintuitive behavior does not take place when the magnetic field is applied at a slight angle off the a–b plane. In fact, the opposite effect is observed for this exact configuration, as well as for other fields arrangements. Ab initio theoretical calculations reveal that anisotropic exchange interactions are the underlying mechanism leading to this peculiar behavior. Furthermore, the long-range ferromagnetic order along the c-axis is thought to coexist with an antiferromagnetic, or spin glass, state in the a–b plane, before becoming paramagnetic above the Curie temperature (T c ). These two coexisting magnetic states are thought to compete as the temperature approaches T c , with the antiferromagnetic state gaining strength compared to the ferromagnetic order.

Barua, Arup [University of South Florida, Tampa, F↗

Dielectric screening and electric field control of ferromagnetism at the CaMnO 3 /CaRuO 3 interface

Control of magnetism by an applied electric field is a desirable technique for the functionalization of magnetic materials. Motivated by recent experiments, we study the electric field control of the interfacial magnetism of CaRuO 3 /CaMnO 3 (CRO/CMO) (001), a prototype interface between a non-magnetic metal and an antiferromagnetic insulator. Even without the electric field, the interfacial CMO layer acquires a ferromagnetic moment due to a spin-canted state, caused by the Anderson-Hasegawa double exchange (DEX) between the Mn moments and the leaked electrons from the CRO side. An electric field would alter the carrier density at the interface, leading to the possibility of controlling the magnetism, since DEX is sensitive to the carrier density. We study this effect quantitatively using density-functional calculations in the slab geometry. We find a text-book like dielectric screening of the electric field, which introduces polarization charges at the interfaces and the surfaces. The extra charge at the interface enhances the ferromagnetism via the DEX interaction, while away from the interface the original AFM state of the Mn layers remains unchanged. The effect could have potential application in spintronics devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗