Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “MOSFETs”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 433 records · Page 24
All sourcesNASA NTRSDOE OSTI
NASA NTRS1977

Far infrared observations of IRC + 10216

Results are reported for measurements of IRC + 10216 at 100 microns made with the 91-cm telescope of NASA's Kuiper Airborne Infrared Observatory. The IR photometer employed consisted of a gallium-doped germanium photoconductive detector with a MOSFET preamplifier and load resistor. Signals obtained from the source at modulation frequencies of 30 and 100 Hz are plotted, and the 100-micron flux measurements are shown to be in agreement with previous bolometric measurements. It is noted that the sensitivity of the photoconductive detection system is comparable to that of the conventional bolometers that have been used in airborne IR observations.

Shivanandan, K.↗
NASA NTRS1978

Continued development of doped-germanium photoconductors for astronomical observations at wavelengths from 30 to 120 micrometers

The development of doped-germanium detectors which have optimized performance in the 30- to 120-mu m wavelength range and are capable of achieving the objectives of the infrared astronomical satellite (IRAS) space mission is discussed. Topics covered include the growth and evaluation of Ge:Ga and Ge:Be crystals, procedures for the fabrication and testing of detectors, irradiance calculations, detector responsivity, and resistance measurements through MOSFET. Test data are presented in graphs and charts.

Bratt, P. R.↗
NASA NTRS1977

Time delay and integration array (TDI) using charge transfer device technology. Phase 2, volume 1: Technical

The 20x9 TDI array was developed to meet the LANDSAT Thematic Mapper Requirements. This array is based upon a self-aligned, transparent gate, buried channel process. The process features: (1) buried channel, four phase, overlapping gate CCD's for high transfer efficiency without fat zero; (2) self-aligned transistors to minimize clock feedthrough and parasitic capacitance; and (3) transparent tin oxide electrode for high quantum efficiency with front surface irradiation. The requirements placed on the array and the performance achieved are summarized. This data is the result of flat field measurements only, no imaging or dynamic target measurements were made during this program. Measurements were performed with two different test stands. The bench test equipment fabricated for this program operated at the 8 micro sec line time and employed simple sampling of the gated MOSFET output video signal. The second stand employed Correlated Doubled Sampling (CDS) and operated at 79.2 micro sec line time.

Source record↗
NASA NTRS1980

Improved insulator layer for MIS devices

Insulating layer of supersonic conductor such as LaF sub 3 has been shown able to impart improved electrical properties to photoconductive detectors and promises to improve other metal/insulator/semiconductor (MIS) devices, e.g., MOSFET and integrated circuits.

Miller, W. E.↗
NASA NTRS1979

A liquid-helium-cooled grating spectrometer for far infrared astronomical observations

A liquid-helium-cooled grating spectrometer has been developed for low-resolution far-infrared spectrometric measurements of astronomical sources conducted by the 30-cm NASA Lear Jet telescope. Simple MOSFET coupled transimpedance preamplifiers were adopted for the spectrometer design. The infrared spectrometer has resolving powers from 10 to 150 over the wavelength range from 45 to 115 microns.

Houck, J. R.↗
NASA NTRS1979

Tests of low background photo conductors

In support of two infrared astronomy space projects, the IRAS satellite and the IRT on Spacelab 2, low-background tests were carried out on the performance and characterization of Si:Ga, Si:As, Si:Sb and Ge:Ga photoconductive detectors. These test results represent a useful appraisal of this family of detectors when operated at 1.8-4.2 K and at background power levels of 10 to the -14th to 10 to the -13th W. In addition to detector performance data, results are also presented on cryogenically cooled MOSFET amplifiers operated in the source follower and in the balanced-dc-TIA configurations.

Young, E. T.↗
NASA NTRS1980

Oxidation of gallium arsenide in a plasma multipole device. Study of the MOS structures obtained

The oxygen plasma oxidation of GaAs was studied in order to obtain extremely high frequency responses with MOS devices. In the multipole system a homogeneous oxygen plasma of high density can easily be obtained in a large volume. This system is thus convenient for the study of plasma oxidation of GaAs. The electrical properties of the MOS diodes obtained in this way are controlled by interface states, located mostly in the upper half of the band gap where densities in the 10 to the 13th power/(sq cm) (eV) range can be estimated. Despite these interface states the possibility of fabricating MOSFET transistors working mostly in the depletion mode for a higher frequency cut-off still exists.

Gourrier, S.↗
NASA NTRS1980

Voyager spacecraft electrostatic discharge testing

The program of environmental testing undergone by the Voyager spacecraft in order to simulate the transient voltage effects of electrostatic discharges expected in the energetic plasma environment of Jupiter is reported. The testing consists of studies of the electrostatic discharge characteristics of spacecraft dielectrics in a vacuum-chamber-electron beam facility, brief piece part sensitivity tests on such items as a MOSFET multiplexer and the grounding of the thermal blanket, and assembly tests of the magnetometer boom and the science boom. In addition, testing of a complete spacecraft was performed using two arc sources to simulate long and short duration discharge sources for successive spacecraft shielding and grounding improvements. Due to the testing program, both Voyager 1 and Voyager 2 experienced tolerable electrostatic discharge-caused transient anomalies in science and engineering subsystems, however, a closer duplication of the spacecraft environment is necessary to predict and design actual spacecraft responses more accurately.

Whittlesey, A.↗
NASA NTRS1979

Semiconductor technology program. Progress briefs

The current status of NBS work on measurement technology for semiconductor materials, process control, and devices is reported. Results of both in-house and contract research are covered. Highlighted activities include modeling of diffusion processes, analysis of model spreading resistance data, and studies of resonance ionization spectroscopy, resistivity-dopant density relationships in p-type silicon, deep level measurements, photoresist sensitometry, random fault measurements, power MOSFET thermal characteristics, power transistor switching characteristics, and gross leak testing. New and selected on-going projects are described. Compilations of recent publications and publications in press are included.

Bullis, W. M.↗
NASA NTRS1983

Portable I/V-Curve Tester

Electronic load circuit for displaying current/voltage characteristic curves of power sources uses low-cost low-power CMOS operational amplifiers to control load current flowing through power MOSFET Q2 and main load transistor Q3. Thermal cutoff device turns off transistor Q3 in case of overload. To maximize battery life, battery is connected via "push-to-read" momentary-contact pushbutton switch.

Cole, S. W.↗
NASA NTRS1982

Electronic Load Tests High-Voltage Solar Arrays

Adjustable electronic load in solar-cell-array test instrument uses ten power MOSFET's and eight resistors. Two gate-control voltages adjusting load are derived from single, manually-operated, ganged potentiometer control. Third adjustable resistor adjusts relative turn-on points of two groups of transistors.

Miller, E. L.↗
NASA NTRS1982

Kilovolt dc solid state remote power controller development

The experience gained in developing and applying solid state power controller (SSPC) technology at high voltage dc (HVDC) potentials and power levels of up to 25 kilowatts is summarized. The HVDC switching devices, power switching concepts, drive circuits, and very fast acting overcurrent protection circuits were analyzed. A 25A bipolar breadboard with Darlington connected switching transistor was built. Fault testing at 900 volts was included. A bipolar transistor packaged breadboard design was developed. Power MOSFET remote power controller (RPC) was designed.

Mitchell, J. T.↗
NASA NTRS1982

A monolithic lead sulfide-silicon MOS integrated-circuit structure

A technique is developed for directly integrating infrared photoconductive PbS detector material with MOS transistors. A layer of chromium, instead of aluminum, is deposited followed by a gold deposition in order to ensure device survival during the chemical deposition of the PbS. Among other devices, a structure was fabricated and evaluated in which the PbS was directly coupled to the gate of a PMOS. The external bias, load, and source resistors were connected and the circuit was operated as a source-follower amplifier. Radiometric evaluations were performed on a variety of different MOSFETs of different geometry. In addition, various detector elements were simultaneously fabricated to demonstrate small element capability, and it was shown that elements of 25 x 25 microns could easily be fabricated. Results of room temperature evaluations using a filtered 700 K black body source yielded a detectivity at peak wavelength of 10 to the 11th cm (root Hz)/W at 100 Hz chopping frequency.

Jhabvala, M. D.↗
NASA NTRS1982

Development and evaluation of integrated infrared arrays for astronomical applications

The status of a technology program to evaluate existing infrared detector arrays, and to develop improved ones for low background astronomical applications, is described. For applications such as the Shuttle Infrared Telescope Facility, arrays that cover as much of the 1-1000 micron range as possible are of interest. Low background test results for a 2 x 64 Si:Bi charge-injection-device, and 1 x 20 InSb charge-coupled-device arrays, are included. As a result of the present testing, improved, astronomy-optimized extrinsic silicon arrays in both linear and area formats are planned. Efforts to develop accumulation mode MOSFETs specifically for liquid helium temperatures, and cryogenic amplifier and multiplexer circuits, are discussed.

Mccreight, C. R.↗
NASA NTRS1983

Inherent overload protection for the series resonant converter

The overload characteristics of the full bridge series resonant power converter are considered. This includes analyses of the two most common control methods presently in use. The first of these uses a current zero crossing detector to synchronize the control signals and is referred to as the alpha controller. The second is driven by a voltage controlled oscillator and is referred to as the gamma controller. It is shown that the gamma controller has certain reliability advantages in that it can be designed with inherent short circuit protection. Experimental results are included for an 86 kHz converter using power metal-oxide-semiconductor field-effect transistors (MOSFETs).

King, R. J.↗
NASA NTRS1984

Integrating amplifiers using cooled JFETs

It is shown how a simple integrating amplifier based on commercially available JFET and MOSFET switches can be used to measure photocurrents from detectors with noise levels as low as 1.6 x 10 to the -18th A/root Hz (10 electrons/sec). A figure shows the basic circuit, along with the waveform at the output. The readout is completely nondestructive; the reset noise does not contribute since sampling of the accumulated charge occurs between resets which are required only when the stored charge has reached a very high level. The storage capacity ranges from 10 to the 6th to 10 to the 9th electrons, depending on detector parameters and linearity requirements. Data taken with an Si:Sb detector operated at 24 microns are presented. The responsivity agrees well with the value obtained by Young et al. (1981) in the transimpedance amplifier circuit. The data are seen as indicating that extremely low values of NEP can be obtained for integration times of 1 sec and that longer integrations continue to improve the SNR at a rate faster than the square root of time when background noise is not present.

Low, F. J.↗
NASA NTRS1985

Remote Power Controllers For High-Power dc Switching

Circuits combine functions of remotely controlled switch and circuit breaker. Circuits developed at different power levels but conceptually very similar. Selection of appropriate switching devices and minor modifications, circuits used to build RPC's covering range of voltage and power levels limited only by switching devices chosen. RPC's using GTO's have power capability ranging from 7.8 to 52 kW, while those using MOSFET's range from 8 to 15 kW. Applications include satellite, Space Station, commerical aircraft, naval vessels, and numerous industrial areas.

Sturman, J. C.↗
NASA NTRS1984

Si MOS devices at low temperatures

Low temperature operation of micron and submicron size Si MOSFETs (metal-oxide-semiconductor field-effect-transistors) results in their improved device characteristics. Various low temperature device properties such as increase in mobility, shift in the theshold voltage, increased reliability, etc., were considered. Other device characteristics such as the subthreshold behavior, delay times and miniaturization at low temperatures are discussed. Discussion includes presenting experimental results along with physical models explaining the observed effects.

Kamgar, A.↗