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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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This letter reports the performance of a novel single-stage W-band amplifier fabricated utilizing flip-chip bump-bonding. We have bump-bonded a high-speed, low-noise InP high electron mobility transistor (HEMT) device onto a separately fabricated passive circuit having a GaAs substrate.
Abstract Phosphorene nanoribbons (PNRs) have inspired strong research interests to explore their exciting properties that are associated with the unique two‐dimensional (2D) structure of phosphorene as well as the additional quantum confinement of the nanoribbon morphology, providing new materials strategy for electronic and optoelectronic applications. Despite several important properties of PNRs, the production of these structures with narrow widths is still a great challenge. Here, a facile and straightforward approach to synthesize PNRs via an electrochemical process that utilize the anisotropic Na + diffusion barrier in black phosphorus (BP) along the [001] zigzag direction against the [100] armchair direction, is reported. The produced PNRs display widths of good uniformity (10.3 ± 3.8 nm) observed by high‐resolution transmission electron microscopy, and the suppressed B 2g vibrational mode from Raman spectroscopy results. More interestingly, when used in field‐effect transistors, synthesized bundles exhibit the n‐type behavior, which is dramatically different from bulk BP flakes which are p‐type. This work provides insights into a new synthesis approach of PNRs with confined widths, paving the way toward the development of phosphorene and other highly anisotropic nanoribbon materials for high‐quality electronic applications.
This study reports the design and development of a novel chemiresistor (CR) sensor using ion imprinted polymer (IIP)-functionalized reduced graphene oxide (rGO) [IIP/rGO-CR] for cadmium ions (Cd(II)) determination in water. The sensor consisted of a CR transducer made of rGO channel bridging source and drain electrodes prepared by self-assembly and thermal reduction of graphene oxide (GO) on Au interdigitated electrodes chip fabricated on Si/SiO 2 substrate. The IIP was then grafted on rGO using surface-initiated reversible addition-fragmentation chain transfer (RAFT) polymerization with polyethylenimine (PEI) and methylacrylic acid (MAA) as dual functional monomers and Cd(II) ions as template through UV light-initiated copolymerization. The IIP functionalized on rGO acted as an effective recognition element that modulated the resistance of rGO-CR upon binding of Cd(II), enabling Cd(II) detection at ppb level in aqueous solutions. The prepared IIP/rGO-CR sensor worked effectively in the linear range of 2~200ppb and achieved a limit of detection (LOD) of 0.83 ppb, which is lower than the World Health Organization guidelines of 3ppb for drinking water quality. The developed sensor of IIP/rGO-CR showed a high selectivity against a variety of trace and heavy metal ions found in water and good stability for up to 60 days when stored at room temperature for Cd(II) determination in water. Further, the sensor was successfully applied to analyzing Cd(II) spiked in tap, lake and river waters with a 94.5%–113.5% recovery, demonstrating a high degree of accuracy even in complex water samples. Finally, our results illustrated that the CR sensor of IIP functionalized rGO provides a potential platform for sensitive, robust and low-cost environmental analysis of Cd(II) in water.
We report atomically precise pentagonal PdSe 2 nanoribbons (PNRs) fabricated on a pristine PdSe 2 substrate with a hybrid method of top-down and bottom-up processes. The PNRs form a uniform array of dimer structure with a width of 2.4 nm and length of more than 200 nm. In situ four-probe scanning tunneling microscopy (STM) reveals metallic behavior of PNRs with ballistic transport for at least 20 nm in length. Density functional theory calculations produce a semiconducting density of states of isolated PNRs and find that the band gap narrows and disappears quickly once considering coupling between PNR stacking layers or interaction with the PdSe 2 substrate. The coupling of PNRs is further corroborated by Raman spectroscopy and field-effect transistor measurements. The facile method of fabricating atomically precise PNRs offers an air-stable functional material for dimensional control.
Long-term exposure to Pb 2+ can cause irreversible damage to the nervous, cardiovascular, and reproductive systems. Therefore, developing a fast and sensitive detection system capable of monitoring minuscule concentrations of Pb 2+ is essential. In this study, we demonstrated a fully portable sensor system enabling rapid, sensitive, and real-time monitoring of Pb 2+ . The sensor system adopted the remote-gate field-effect transistor (RGFET) detection scheme and was easy to operate, even for non-experts. The sensor system comprised two printed circuit boards (PCBs): a sensor PCB with a remote-gate electrode and an analyzer PCB with a metal-oxide-semiconductor field-effect transistor (MOSFET) transducer and peripheral electronics to manage sensor signals. To achieve a high sensitivity for Pb 2+ , we utilized graphene ink drop-casted on the sensor PCB as a sensing membrane. The graphene film was easy to deposit and remove, enabling the sensor PCB to be reused multiple times. The sensor system was further linked to a smartphone application that instantly monitors the sensor response, allowing for rapid point-of-use detection. The sensor exhibited a high sensitivity of 21.7% when the limit of detection (LOD) value of 1 nM (∼0.2 ppb) was detected, and the typical detection time for each sample was approximately 60 seconds. This portable sensor system advances sensing technologies and could potentially supplement expensive, laborious conventional sensing equipment.
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A four-quadrant switch (FQS) blocks either polarity voltage and controls current flow in both directions. Unlike voltage-source converters, in which two-quadrant switches operate over a narrow voltage range, four-quadrant switches are required to operate over a wide range of both voltage and current in applications such as matrix converters and current-source converters. Furthermore, matrix converters require multi-step commutation schemes compared to two-step schemes for current-bidirectional switch based voltage-source converters and voltage-bidirectional switch based current-source converters. This paper provides a generalized overview of commutation schemes used for two and four quadrant switches based two-level commutation cells, identifies comparison indices for FQS commutation schemes, and discusses the need for adaptive commutation-step times for wide voltage and current variation applications. Also, the static and dynamic characteristics of 1.2 kV rated FQS implementations utilizing commercial SiC MOSFETs from four different manufacturers and novel monolithic SiC BiDirectional Field Effect Transistor (BiDFET) have been reported.
The 1.2 kV 4H-SiC BiDirectional Field Effect Transistor (BiDFET) is the first monolithic SiC bidirectional switch, which offers a lower voltage drop and semiconductor devices count alternative to the reverse-voltage-blocking (RB) switch used in the current-source converters (CSC). The bidirectional switch based CSC also allows DC-link current reversal for bidirectional power flow and provides multiple system-level benefits in a buck-boost AC/DC system consisting of buck-type DC/DC converter and CSC. This paper discusses the selection of buck converter duty cycle and CSC modulation index for the system’s buck-boost operation with a wide variation in DC voltage. CSC modulation schemes categorized based on the number of hard-turn-on transitions per switching cycle are also analyzed along with the three-step and four-step commutation schemes that are essential for the CSC commutation cells. Finally, the different schemes are evaluated and compared through the experimental results of a 10 kW, 480 VRMS, LL/ (400 − 800) V AC/DC system.
Campylobacter jejuni is a leading cause of bacterial gastroenteritis worldwide. Acute infection can be an antecedent to highly debilitating long-term sequelae. The expression of iron acquisition systems is vital for C. jejuni to survive the low iron availability within the human gut. The C. jejuni fetMP-fetABCDEF gene cluster is known to be upregulated during human infection and under iron limitation. While FetM and FetP have been functionally linked to iron transport in prior work, here we assess the contribution of each of the downstream genes (fetABCDEF) to C. jejuni growth during both iron-depleted and iron-replete conditions. Significant growth impairment was observed upon disruption of fetA, fetB, fetC, and fetD, suggesting a role in FetMP-mediated iron acquisition for each encoded protein. FetA expression was not dependent on the presence of FetB, FetC, FetD, FetE, or FetF. The functions of the putative thioredoxins FetE and FetF were redundant under iron-limited growth, requiring a double deletion (ΔfetEF) to exhibit a growth defect. C. jejuni FetE was expressed, and the structure was solved to 1.50 Å, revealing structural similarity to thiol-disulfide oxidases. Functional characterization in biochemical assays showed that FetE reduced insulin at a slower rate than Escherichia coli Trx and that together, FetEF promoted substrate oxidation in cell extracts, suggesting that FetE (and presumably FetF) are oxidoreductases that can mediate oxidation in vivo. This study advances our understanding of the contributions of the fetMP-fetABCDEF gene cluster to virulence at a genetic and functional level, providing foundational knowledge toward mitigating C. jejuni-related morbidity and mortality.
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In this paper, we present an overview of high frequency Monolithic Millimeter-wave Integrated Circuit (MMIC) amplifiers and discuss the state of the art for low noise amplifiers and power amplifiers.
We present results on an InP monolithic millimeter- wave integrated circuit (MMIC) amplifier having 10-dB gain at 235 GHz. We designed this circuit and fabricated the chip in Northrop Grumman Space Technology's (NGST) 0.07- m InP high electron mobility transistor (HEMT) process. Using a WR3 (220-325 GHz) waveguide vector network analyzer system interfaced to waveguide wafer probes, we measured this chip on-wafer for -parameters. To our knowledge, this is the first time a WR3 waveguide on-wafer measurement system has been used to measure gain in a MMIC amplifier above 230 GHz.
This viewgraph presentation surveys the fastest Monolithic Millimeter-wave Integrated Circuit (MMIC) amplifiers to date; summarize previous solid state power amp results to date; reviews examples of MMICs, reviews Power vs. Gate periphery and frequency; Summarizes previous LNA results to date; reviews Noise figure results and trends toward higher frequency
We have developed and demonstrated miniature 180 GHz Monolithic Microwave Integrated Circuit (MMIC) radiometer modules that have low noise temperature, low mass and low power consumption. These modules will enable the Geostationary Synthetic Thinned Aperture Radiometer (GeoSTAR) of the Precipitation and All-weather Temperature and Humidity (PATH) Mission for atmospheric temperature and humidity profiling. The GeoSTAR instrument has an array of hundreds of receivers. Technology that was developed included Indium Phosphide (InP) MMIC Low Noise Amplifiers (LNAs) and second harmonic MMIC mixers and I-Q mixers, surface mount Multi-Chip Module (MCM) packages at 180 GHz, and interferometric array at 180 GHz. A complete MMIC chip set for the 180 GHz receiver modules (LNAs and I-Q Second harmonic mixer) was developed. The MMIC LNAs had more than 50% lower noise temperature (NT=300K) than previous state-of-art and MMIC I-Q mixers demonstrated low LO power (3 dBm). Two lots of MMIC wafers were processed with very high DC transconductance of up to 2800 mS/mm for the 35 nm gate length devices. Based on these MMICs a 180 GHz Multichip Module was developed that had a factor of 100 lower mass/volume (16x18x4.5 mm3, 3g) than previous generation 180 GHz receivers.
This article presents a new algorithmic framework for multilayer inversion of the dense media radiative transfer (DMRT) equations of snowpack emission, with particular emphasis on the role of high-frequency microwave channels above 60 GHz. The approach relies on dictionary matching and locally constrained least squares. The results demonstrate that the algorithm can invert the DMRT model and retrieve depth, density, and grain size of a single-layer snowpack when dependencies of density and grain size on depth are properly accounted for. However, as the number of layers increases, the sensitivity of the inversion to observation noise grows markedly. Using observations, over the Great Plains in the United States, from the microwave imager onboard the global precipitation measurement (GPM, 10-166 GHz) core satellite, the initial results demonstrate that under a clear-sky condition and no vegetation canopy, the algorithm is capable to retrieve the snow depth and water equivalent of seasonal snow with a mean absolute error (MAE) of less than 0.15 m--when compared to the high-resolution analysis data from the SNOw Data Assimilation System (SNODAS).
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