Mechanism of the photovoltaic effect in II-VI compounds Progress report, 1 Jan. - 31 Mar. 1970
Trapped charging and photovoltaic performance of Cu2S-CdS cell including heat treatment effects
Bube, R. H.↗
SEARCH · Engineering Papers
Results for “CdS”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
Rf-sputtered cadmium sulfide 'thin crystals'
RF-sputtered CdS thin films structural and electrical characteristics from X ray diffractometer tracings, reflection electron diffraction and X ray double crystal spectrometry
Lagnado, I.↗
The effect of electrons, protons and ultraviolet radiation on plastic materials
Electron, proton and UV irradiation effects on CdS solar cell protective plastic films with or without adhesive coatings, measuring transmission changes
Anagnostou, E.↗
Effect of load voltage on thin film cuprous sulfide: Cadmium sulfide solar cells thermally cycled in a simulated space environment
Thin-film Cu2S-CdS solar cells, loaded at various fixed values of load resistance, were thermally cycled for 1429 cycles in a simulated space environment. Cell performance was measured under controlled conditions in air before and after thermal cycling. These data were used to determine the effect of load voltage on cell performance. The performance of the cells was relatively independent of load voltage up to about 0.39 volt. This appears to be a threshold voltage, beyond which there was a significant loss in cell performance. Fortunately, this threshold voltage appears to be sufficiently higher than the maximum power voltage of 0.33 volt so that it can be avoided in most applications.
Smithrick, J. J.↗
Simulated space environment tests on cadmium sulfide solar cells
Cadmium sulfide (Cu2s - CdS) solar cells were tested under simulated space environmental conditions. Some cells were thermally cycled with illumination from a Xenon-arc solar simulator. A cycle was one hour of illumination followed immediately with one-half hour of darkness. In the light, the cells reached an equilibrium temperature of 60 C (333 K) and in the dark the cell temperature dropped to -120 C (153 K). Other cells were constantly illuminated with a Xenon-arc solar simulator. The equilibrium temperature of these cells was 55 C (328 K). The black vacuum chamber walls were cooled with liquid nitrogen to simulate a space heat sink. Chamber pressure was maintained at 0.000001 torr or less. Almost all of the solar cells tested degraded in power when exposed to a simulated space environment of either thermal cycling or constant illumination. The cells tested the longest were exposed to 10.050 thermal cycles.
Clarke, D. R.↗
Ultrasonic attenuation in superconducting molybdenum-rhenium alloys.
Investigation of longitudinal sound attenuation in superconducting Mo-Re alloys as a function of temperature, magnetic field, and frequency. Evaporated thin film CdS transducers were used for the measurements at frequencies up to 3 GHz. The normal state attenuation coefficient was found to be proportional to the square of frequency over this frequency range. Measurements in zero magnetic field yielded a value of the energy gap parameter close to the threshold value of 3.56 kTc, appropriate to a weakly coupled dirty limit superconductor.
Ashkin, M.↗
Photoconductor-metal contact at higher densities.
The formation of space charge in the barrier region is discussed. This region extends to a distance, x-sub o, equal to 200 A plus twice the mean free path of majority carriers. The conventional transport equation can be used only for x greater than x-sub o, and the carrier density at x-sub o represents a boundary condition for the bulk. Its change as a function of applied voltage, temperature, and light intensity in photoconducting CdS is discussed. The time dependence of the space-charge formation in the region between 0 and x-sub o is analyzed. It is shown under which conditions the individuality of the metal contact is observable.
Dussel, G. A.↗
Verification of sensitivity enhancement factors for CW ultrasonic resonators.
Sensitivity enhancement factors predicted by an analysis of CW ultrasonic resonator systems using the propagating wave model are verified. Absorption and dispersion sensitivity factors were obtained by producing small changes in the acoustic properties of a CdS resonator with a light beam.
Heyman, J. S.↗
Photomechanical vibration of thin crystals of polar semiconductors
It was found that thin crystals of polar (non-centrosymmetric) semiconductors constitute a new type of photosensitive system in which incident illumination is converted into mechanical energy: thus, illumination-induced elastic deformation (bending) was observed on thin (00.1) CdS and (111) GaAs crystals; furthermore, by employing chopped light the crystals were excited to their resonant vibration (photomechanical vibration); the dependence of the amplitude of this vibration on the energy of the incident radiation was found to be similar to the dependence of the surface photovoltage on the energy of the incident radiation (surface photovoltage spectrum). The present findings are consistent with a model based on light-induced modulation of the piezoelectric surface stresses.
Lagowski, J.↗
A new real-time non-coherent to coherent light image converter - The hybrid field effect liquid crystal light valve
A new, high-performance device has been developed for application to real-time coherent optical data processing. The new device embodies a CdS photoconductor, a CdTe light-absorbing layer, a dielectric mirror, and a liquid crystal layer sandwiched between indium-tin-oxide transparent electrodes deposited on optical quality glass flats. The noncoherent image is directed onto the photoconductor; this reduces the impedance of the photoconductor, thereby switching the ac voltage that is impressed across the electrodes onto the liquid crystal to activate the device. The liquid crystal is operated in a hybrid field effect mode. It utilizes the twisted nematic effect to create a dark off-state and the optical birefringence effect to create the bright on-state. The liquid crystal modulates the polarization of the coherent read-out light so an analyzer must be used to create an intensity modulated output beam.
Grinberg, J.↗
Cadmium stannate selective optical films for solar energy applications
Efforts concentrated on reducing the electrical sheet resistance of sputtered cadmium stannate films, installing and testing equipment for spray coating experiments, and sputter deposition of thin cadmium sulfide layers onto cadmium stannate electrodes. In addition, single crystal silicon wafers were coated with cadmium stannate. Work also continued on the development of the backwall CdS solar cell.
Haacke, G.↗
Photoelectrochemical cells - Conversion of intense optical energy
Conversion of optical energy to chemical energy and/or electrical energy using wet photoelectrochemical cells is described. Emphasis is on (1) the photoelectrolysis of H2O to H2 and O2 using cells having n-type semiconductor photoelectrodes fabricated from TiO2, SnO2, SrTiO3, KTaO3, and KTa(0.77)Nb(0.23)O3, and (2) the conversion of light to electrical energy using CdSe- and CdS-based cells with polysulfide electrolytes.
Wrighton, M. S.↗
Optically activated switch/modulator using a photoconductor and two channel waveguides
An optically activated switch was fabricated on LiNbO3 substrate by deposition of photoconductor-metal electrode structure on two channel waveguides obtained by the outdiffusion process. One waveguide was overcoated with a CdS film, and served as a light detector which converted the optical signal in that waveguide into an electric signal. Utilizing the electrooptic effect, this electric signal modulated the light propagating in the second waveguide by changing the refractive index, and the cutoff condition, of the waveguiding channel between two metal electrodes. The waveguides in the optically controlled switch can be either single or multimode. The length of the device can be short in comparison with other switching schemes. When binary optical signals are applied to the two waveguides, the switch can perform logic AND, NEGATION, OR and pseudo-amplification operations.
Goldberg, L.↗
Status of photoelectrochemical production of hydrogen and electrical energy
The efficiency for conversion of electromagnetic energy to chemical and electrical energy utilizing semiconductor single crystals as photoanodes in electrochemical cells was investigated. Efficiencies as high as 20 percent were achieved for the conversion of 330 nm radiation to chemical energy in the form of hydrogen by the photoelectrolysis of water in a SrTiO3 based cell. The SrTiO3 photoanodes were shown to be stable in 9.5 M NaOH solutions for periods up to 48 hours. Efficiencies of 9 percent were measured for the conversion of broadband visible radiation to hydrogen using n-type GaAs crystals as photoanodes. Crystals of GaAs coated with 500 nm of gold, silver, or tin for surface passivation show no significant change in efficiency. By suppressing the production of hydrogen in a CdSe-based photogalvanic cell, an efficiency of 9 percent was obtained in conversion of 633 nm light to electrical energy. A CdS-based photogalvanic cell produced a conversion efficiency of 5 percent for 500 nm radiation.
Byvik, C. E.↗
Time delay and integration array (TDI) using charge transfer device technology. Phase 2, volume 1: Technical
The 20x9 TDI array was developed to meet the LANDSAT Thematic Mapper Requirements. This array is based upon a self-aligned, transparent gate, buried channel process. The process features: (1) buried channel, four phase, overlapping gate CCD's for high transfer efficiency without fat zero; (2) self-aligned transistors to minimize clock feedthrough and parasitic capacitance; and (3) transparent tin oxide electrode for high quantum efficiency with front surface irradiation. The requirements placed on the array and the performance achieved are summarized. This data is the result of flat field measurements only, no imaging or dynamic target measurements were made during this program. Measurements were performed with two different test stands. The bench test equipment fabricated for this program operated at the 8 micro sec line time and employed simple sampling of the gated MOSFET output video signal. The second stand employed Correlated Doubled Sampling (CDS) and operated at 79.2 micro sec line time.
Source record↗
Application of an ultrasonic phase insensitive receiver to material measurements
The theory of a phase insensitive receiver based on acousto-electric effect is presented along with experimental characteristics of a CdS acousto-electric converter (AEC). Since the AEC is nearly phase insensitive, it is ideal for measurements in inhomogeneous materials and/or materials with irregular flatness and parallelism. Through transmission ultrasonic C-scan data of phantom flaws demonstrates a significant improvement in flaw characterization with an AEC over that of a conventional transducer. In addition, measurements with conventional transducers in anisotropically stressed metal samples are shown to lead to grossly inaccurate results due to phase sensitivity. Various other measurements are presented with data contrasting conventional transducers with an AEC in specific NDE applications.
Heyman, J. S.↗
Application of an ultrasonic phase insensitive receiver to material measurements
The theory of a phase insensitive receiver based on acousto-electric effect is presented along with experimental characteristics of a CdS acousto-electric converter (AEC). Since the AEC is nearly phase insensitive, it is ideal for measurements in inhomogeneous materials and/or materials with irregular flatness and parallelism. Through transmission ultrasonic C-scan data of phantom flaws demonstrates a significant improvement in flaw characterization with an AEC over that of a conventional transducer. In addition, measurements with conventional transducers in anisotropically stressed metal samples are shown to lead to grossly inaccurate results due to phase sensitivity. Various other measurements are presented with data contrasting conventional transducers with an AEC in specific NDE applications.
Heyman, J. S.↗
CdInP semiconductor alloy
Semiconductor alloy of CdSInP deposited onto CdS substrate using liquid-phase epitaxy (LPE) employed in solvent is replacement for InP n- and p-type heterojunction layers contained in GaAsp laser devices. Alloy will aid in lowering current density of laser and enhance its longevity and CW operation at room temperature.
Hawrylo, F. Z.↗