Large Area Crop Inventory Experiment (LACIE). A wheat yield model for Punjab, India
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A process for the continuous growth of crystals by the Czochralski method, suitable for producing single silicon crystals for use in solar cells was studied. Continuous growth is the growth of 100 Kg of single silicon crystals, 10 cm in diameter, from one container. A furnace with continuous liquid replenishment of the growth crucible, accomplished by a melt-down system and a liquid transfer mechanism, with associated automatic feedback controls was developed. Elements of the transfer system were further developed and tested during actual transfer runs. Considerable simplification of the heating element of the transfer tube was achieved. Accuracy and reliability of the temperature sensor, which is part of the power input control system for the transfer tube, was improved. Electrical and thermal effectiveness were increased while assembly of the transfer tube system was further simplified.
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Progress made in the development of EFG ribbon growth is discussed. Specific areas covered include: (1) demonstration of multiple growth for ribbons 5 cm wide in runs of 12 and 20 hours duration; (2) a single cartridge crystal growth station was built expanding observational capacity by virtue of an anamorphic optical-video system which allows close observation of the meniscus over 7.5 cm wide, as well as video taping of the ribbon growth process; (3) growth station no.1 achieved reproducible and reliable growth of 7.5 cm wide ribbon at speeds up to 4 cm/min; (4) introduction of the 'mini cold shoe'; (5) increases in cell efficiency due to interface shaping using the 'displaced die' concept; and (6) clarification of the role of gaseous impurities in cartridge furnaces and stabilization of their destabilizing influence on growth.
Displaced die concepts were explored along with some initial work on buckle characterization. Convective impurity redistribution was further studied. Growth from single cartridges was continued to create a quality baseline to allow comparison of the results with those in the upcoming multiple run and to choose the most appropriate die design. Fabrication and assembly work on the actual five ribbon furnace continued. Progress was made toward the development of the video optical system for edge position and meniscus height control. In preparation for a detailed program, designed to explore the buckling problem, ribbon guidance in the machine was improved. Buckle free, full width ribbon was grown under stable conditions without a cold shoe, an achievement essential to finally arrive at quantitative correlations between growth conditions and buckle formation.
There are no author-identified significant results in this report.
The author has identified the following significant results. An outgrowth of research and development activities in support of LACIE was a multicrop area estimation procedure, Procedure M. This procedure was a flexible, modular system that could be operated within the LACIE framework. Its distinctive features were refined preprocessing (including spatially varying correction for atmospheric haze), definition of field like spatial features for labeling, spectral stratification, and unbiased selection of samples to label and crop area estimation without conventional maximum likelihood classification.
A commercial Czochralski crystal growing furnace was converted to a continuous growth facility by installation of a small, in-situ premelter with attendant silicon storage and transport mechanisms. Using a vertical, cylindrical graphite heater containing a small fused quartz test tube linear from which the molten silicon flowed out the bottom, approximately 83 cm of nominal 5 cm diamter crystal was grown with continuous melt addition furnished by the test tube premelter. High perfection crystal was not obtained, however, due primarily to particulate contamination of the melt. A major contributor to the particulate problem was severe silicon oxide buildup on the premelter which would ultimately drop into the primary melt. Elimination of this oxide buildup will require extensive study and experimentation and the ultimate success of continuous Czochralski depends on a successful solution to this problem. Economically, the continuous Czochralski meets near-term cost goals for silicon sheet material.
A technique for growing limited-length ribbons continually was demonstrated. This Rigid Edge technique can be used to recrystallize about 95% of the polyribbon feedstock. A major advantage of this method is that only a single, constant length silicon ribbon is handled throughout the entire process sequence; this may be accomplished using cassettes similar to those presently in use for processing Czochralski waters. Thus a transition from Cz to ribbon technology can be smoothly affected. The maximum size being considered, 3 inches x 24 inches, is half a square foot, and will generate 6 watts for 12% efficiency at 1 sun. Silicon dioxide has been demonstrated as an effective, practical diffusion barrier for use during the polyribbon formation.
The author has identified the following significant results. A major advantage of this scheme is that it needs minimal human intervention. The entire scheme, with the exception of the choice of dates, can be computerized and the results obtained in minutes. The decision to limit the number of acquisitions processed to four was made to facilitate operation on the particular computer being used. Some earlier runs on another computer system were based on as many as seven biophase-1 acquisitions.
The various steps involved in the chemical polishing and etching of silicon samples are described and the data on twins, grain boundaries and dislocation pits from fifty-three (53) samples are discussed.
There are no author-identified significant results in this report.
The various steps involved in the chemical polishing and etching of silicon samples are described. Data on twins, dislocation pits, and grain boundaries from thirty-one (31) silicon sample are also discussed. A brief review of the changes made to upgrade the image analysis system is included.
During the reporting period, a successful 100 kilogram run was performed. Six ingots of 13 cm diameter were grown, ranging in size from 15.5 kg to 17.7 kg. Melt replenishment methods included both poly rod and lump feed material. Samples from each ingot were prepared for solar cell fabrication and analyses, impurity analysis, and structural studies. The furnace was converted to the 14-inch hot zone and preliminary heat runs were performed. Two sucessful runs were demonstrated, by growing 25 kg ingots from 30 kg melts. Also, a 100 kg run was attempted, utilizing the 14 inch crucible hot zone, but was prematurely terminated due to excessive monoxide which accumulated on the viewports and a seed failure.
Influences on ribbon quality which might be caused by various materials of construction which are used in the growth furnace were assessed. At the present level of ribbon quality, which has produced 8.5% to 9.5% efficient solar cells, no particular influence of any furnace part was detected. The experiments led to the suspicion that the general environment and the somewhat unoptimized materials handling procedures might be responsible for the current variations in ribbon quality and that, therefore, continuous work with this furnace under rather more stringent environmental conditions and operating procedures could perhaps improve materials quality to some extent. The work on the multiple furnace was continued with two multiple growth runs being performed. In these runs, the melt replenishment system performed poorly and extensive modifications to it were designed to make reliable melt feeding for five ribbon growth possible. Additional characterization techniques for wide ribbons, stress measurements, and growth dynamics experiments are reported.
There are no author-identified significant results in this report.
There are no author-identified significant results in this report.
There are no author-identified significant results in this report.