Vapor-phase growth of several III-V compound semiconductors
Crystal growth of III-V compound semiconductors from vapor phase, studying deposition processes chemistry by mass spectrometry
Ban, V. S.↗
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Metallization systems for semiconductor devices
Metals and systems for semiconductor devices metallization, evaluating conductivity, adhesion, contact resistance, deposition ease, electrochemical corrosion, reliability and stability
Terry, L. E.↗
Statistical mechanics of charged traps in an amorphous semiconductor
Coulomb interaction effect between charged traps in amorphous semiconductor, noting state density reduction at Fermi energy
Srinivasan, G.↗
An approach to real-time process control of semiconductor wire-bonding
Thermal probe using infrared-transparent optical fiber attached to tip of collet with resin to prevent movement during bonding is used to accurately measure temperature during wire bonding on semiconductors for use in large scale integrated circuits.
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Methods of measurement for semiconductor materials, process control, and devices
The development of methods of measurement for semiconductor materials, process control, and devices is discussed. The following subjects are also presented: (1) demonstration of the high sensitivity of the infrared response technique by the identification of gold in a germanium diode, (2) verification that transient thermal response is significantly more sensitive to the presence of voids in die attachment than steady-state thermal resistance, and (3) development of equipment for determining susceptibility of transistors to hot spot formation by the current-gain technique.
Bullis, W. M.↗
Vapor phase growth system and its use in the preparation of several III-V compound semiconductors
Vapor phase growth and properties of semiconductor materials
Enstrom, R. E.↗
Methods of measurement for semiconductor materials, process control, and devices
Activities directed toward the development of methods of measurement for semiconductor materials, process control, and devices are described. Topics investigated include: measurements of transistor delay time; application of the infrared response technique to the study of radiation-damaged, lithium-drifted silicon detectors; and identification of a condition that minimizes wire flexure and reduces the failure rate of wire bonds in transistors and integrated circuits under slow thermal cycling conditions. Supplementary data concerning staff, standards committee activities, technical services, and publications are included as appendixes.
Bullis, W. M.↗
Using the scanning electron microscope on the production line to assure quality semiconductors
The use of the scanning electron microscope to detect metallization defects introduced during batch processing of semiconductor devices is discussed. A method of determining metallization integrity was developed which culminates in a procurement specification using the scanning microscope on the production line as a quality control tool. Batch process control of the metallization operation is monitored early in the manufacturing cycle.
Adolphsen, J. W.↗
Photovoltage inversion effect and its application to semiconductor surface studies: CdS.
Experimental results on the surface states of the basal plane of CdS are presented and discussed in the light of a model of the photovoltage inversion effect. It is found that the surface states associated with this effect are in poor communication with the bulk and under normal conditions may require long periods of time to reach equilibrium. A combination of photovoltage inversion, photovoltage quenching, and photovoltage spectroscopy is believed to constitute a very effective tool for the study of surfaces of wide energy gap semiconductors.
Lagowski, J.↗
Glass encapsulation provides extra protection for IC semiconductor devices
Oxide-passivated semiconductor chip is given protective glass coating by means of vapor deposition over metallic substrate of integrated circuit (IC). Method provides more reliable oxide-passivation and hermetic sealing in current use. Chips and scratches incurred during dicing, testing, and assembly are markedly reduced.
Doelp, W. L., Jr.↗
An improved method for obtaining a normalized junction temperature for semiconductors: A concept
Failure rate for given semiconductor device is simply determined by reading value of normalized junction temperature from printout for any given combination of ambient temperature, stress ratio, and maximum rated junction temperature, and obtaining corresponding failure rate from graph.
Trivedi, S. N.↗
Laser scanner for testing semiconductor chips
Individual ''fingerprint'' signals are produced when system photoexcites chips. ''Fingerprints'' are analyzed for characteristics associated with defects, including many not visible to the naked eye. Electromagnetic radiation photogenerates free electrons and holes in semiconductor chip. These carriers produce electrical signals at terminals. Signals vary depending on what defects are present.
Hall, T. C.↗
Improvement of screening methods for silicon planar semiconductor devices
The results of the program for the development of a more sensitive method for selecting silicon planar semiconductor devices for long life applications are reported. The manufacturing technologies (MOS and Bipolar) are discussed along with the screening procedures developed as a result of the tests and evaluations, and the effectiveness of the MOS and Bilayer screening procedures are evaluated.
Berger, W. M.↗
Reliability improvement of 1 mil aluminum wire bonds for semiconductors, technical performance summary
The reliability of semiconductor devices as influenced by the reliability of wire bonds used in the assembly of the devices is investigated. The specific type of failure dealt with involves fracture of wire bonds as a result of repeated flexure of the wire at the heel of the bond when the devices are operated in an on-off mode. The mechanism of failure is one of induced fracture of the wire. To improve the reliability of a chosen transistor, one-mil diameter wires of aluminum with various alloy additions were studied using an accelerated fatigue testing machine. In addition, the electroprobe was used to study the metallurgy of the wires as to microstructure and kinetics of the growth of insoluble phases. Thermocompression and ultrasonic bonding techniques were also investigated.
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Fundamental properties of semiconductor materials, and material performance in detectors
Procedures for determining fundamental properties of semiconductor materials, their performance as radiation detectors, and their service life as such detectors are given. Relationships were established between the minority carrier lifetime in the bulk of the material and the charge collection efficiency of the detector.
Casper, K. J.↗
Theoretical and experimental investigations of superconductivity. Amorphous semiconductors, superconductivity and magnetism
The research activities from 1 March 1963 to 28 February 1973 are summarized. Major lectures are listed along with publications on superconductivity, superfluidity, electronic structures and Fermi surfaces of metals, optical spectra of solids, electronic structure of insulators and semiconductors, theory of magnetic metals, physics of surfaces, structures of metals, and molecular physics.
Cohen, M. H.↗
The effect of surface conditions on the work function of insulators and semiconductors
Ionization energies of organic semiconductors were determined using single crystals of the material. The theory of the method is essentially that of Millikan's oil drop experiment. The technique employed in the experiment is based on the electrostatic method of balancing a charged particle in an electric field against the force of gravity for different excitation energies above the threshold value, and from an estimate of the balancing voltages, read off the ionization energy from the intercept of the energy axis in a plot wavelength corresponding to the balancing potential for the incident radiation of wavelength. In the modified technique which is adopted in the present experimental investigation, a small single crystal is suspended by a fine quartz fiber between two vertical capacitor plates to which a suitable high voltage is applied.
George, A.↗
SEM evaluation of metallization on semiconductors
A test method for the evaluation of metallization on semiconductors is presented and discussed. The method has been prepared in MIL-STD format for submittal as a proposed addition to MIL-STD-883. It is applicable to discrete devices and to integrated circuits and specifically addresses batch-process oriented defects. Quantitative accept/reject criteria are given for contact windows, other oxide steps, and general interconnecting metallization. Figures are provided that illustrate typical types of defects. Apparatus specifications, sampling plans, and specimen preparation and examination requirements are described. Procedures for glassivated devices and for multi-metal interconnection systems are included.
Fresh, D. L.↗