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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 397 records · Page 22
All sourcesNASA NTRSDOE OSTI
NASA NTRS1971

Two new methods to increase the contrast of track-etch neutron radiographs

Methods for increasing the (optical density span) of radiographs were evaluated. In one method, fluorescent dye was deposited in the tracks of the radiograph. The radiograph was then examined under ultraviolet light. The second method was a crossed Polaroid filter technique. The radiograph was placed between the filters and then illuminated with a diffuse white-light source. An increase in the optical density span from .10 to .37 was obtained with the dye method. With the Polaroid method, the increase obtained was from .10 to 2.4.

Morley, J.↗
NASA NTRS1980

Precise wet-chemical etching

Controlled amount of etchant applied to surface of rotating sample removes only few angstroms of material. Technique is suited to study of chemical and crystal structures. Rate can be varied through control of spin frequency, liquid viscosity, droplet size, total etchant volume, etchant concentration.

Grunthaner, F. J.↗
NASA NTRS1980

Widely tunable (PbSn)Te lasers using etched cavities for mass production

Lead salt diode lasers are being used increasingly as tunable sources of monochromatic infrared radiation in a variety of spectroscopic systems. These devices are particularly useful, both in the laboratory and in the field, because of their high spectral brightness (compared to thermal sources) and wide spectral coverage (compared to line-tunable gas lasers). While the primary commercial application of these lasers has been for ultrahigh resolution laboratory spectroscopy, there are numerous systems applications, including laser absorbtion pollution monitors and laser heterodyne radiometers, for which diode lasers have great potential utility. Problem areas related to the wider use of these components are identified. Among these are total tuning range, mode control, and high fabrication cost. A fabrication technique which specifically addresses the problems of tuning range and cost, and which also has potential application for mode control, is reported.

Miller, M. D.↗
NASA NTRS1983

Ion beam sputter-etched ventricular catheter for hydrocephalus shunt

A cerebrospinal fluid shunt in the form of a ventricular catheter for controlling the condition of hydrocephalus by relieving the excessive cerebrospinal fluid pressure is described. A method for fabrication of the catheter and shunting the cerebral fluid from the cerebral ventricles to other areas of the body is also considered. Shunt flow failure occurs if the ventricle collapse due to improper valve function causing overdrainage. The ventricular catheter comprises a multiplicity of inlet microtubules. Each microtubule has both a large openings at its inlet end and a multiplicity of microscopic openings along its lateral surfaces.

Banks, B. A.↗
NASA NTRS1985

Texture etching of (100) silicon for solar cells

A chemical means of creating the proper kind of light collection texture on (100) silicon slices is discussed. Texturing of (100) silicon surfaces in sodium or potassium hydroxides occurs by the growth of a reaction product in a random array of surface sites, which leads to pyramids remaining at the sites after other parts of the surface dissolve away. A new texture-promoting influence, a proximity effect, was discovered in this work. An attempt was made to quantify the various promotional effects. The purpose of the present paper is to: (1) explain in detail the attempt at understanding and quantifying texturing; (2) give an experimental description with observations on the proximity effect and the effect of additions of water glass that were discovered during this work; and (3) show that the precipitate or growth models account for almost all of the known promotional effects.

Dyer, L. D.↗
NASA NTRS1991

Atomic force microscopy of atomic-scale ledges and etch pits formed during dissolution of quartz

The processes involved in the dissolution and growth of crystals are closely related. Atomic force microscopy (AFM) of faceted pits (called negative crystals) formed during quartz dissolution reveals subtle details of these underlying physical mechanisms for silicates. In imaging these surfaces, the AFM detected ledges less than 1 nm high that were spaced 10 to 90 nm apart. A dislocation pit, invisible to optical and scanning electron microscopy measurements and serving as a ledge source, was also imaged. These observations confirm the applicability of ledge-motion models to dissolution and growth of silicates; coupled with measurements of dissolution rate on facets, these methods provide a powerful tool for probing mineral surface kinetics.

Gratz, A. J.↗
NASA NTRS1993

Solar noble gases revealed by closed system stepped etching of a metal separate from Fayetteville

Solar He, Ne, and Ar in a Fe-Ni separate from the chondrite Fayetteville are analyzed by closed system stepped oxidation. We report here data of the first 15 steps comprising 55 percent of the total solar gases. He-4/Ar-36 and Ne-20/Ar-36 are quite constant at values about 20 percent below those of present day solar wind (SWC). In this, Fe-Ni differs from lunar ilmenites where He-4/Ar-36 and Ne-20/Ar-36 in the first steps are several times below SWC. Thus, metal retains SW-noble gases even better than ilmenite, almost without element fractionation. Nevertheless, the isotopic composition of SW-He, -Ne, and -Ar in the first steps of the metal sample are identical to those found in a recently irradiated lunar ilmenite, indicating that ilmenites and chondritic metal both contain isotopically unfractionated SW noble gases. A preliminary analysis of a smaller Fayetteville metal separate shows Ne from solar energetic particles (SEP-Ne) with Ne-20/Ne-22 less than or equal to 11.5.

Murer, CH.↗
NASA NTRS1995

Preferentially etched epitaxial liftoff of InP material

The present invention is directed toward a method of removing epitaxial substrates from host substrates. A sacrificial release layer of ternary material is placed on the substrate. A layer of InP is then placed on the ternary material. Afterward a layer of wax is applied to the InP layer to apply compressive force and an etchant material is used to remove the sacrificial release layer.

Bailey, Sheila G.↗
NASA NTRS1997

Preferentially Etched Epitaxial Liftoff of InP Material

The present invention is directed toward a method of removing epitaxial substrates from host substrates. A sacrificial release layer of ternary material is placed on the substrate. A layer of InP is then placed on the ternary material. Afterward a layer of wax is applied to the InP layer to apply compressive force and an etchant material is used to remove the sacrificial release layer.

Bailey, Sheila G.↗