NASA NTRS · 19790000364
Precise wet-chemical etching
Abstract
Controlled amount of etchant applied to surface of rotating sample removes only few angstroms of material. Technique is suited to study of chemical and crystal structures. Rate can be varied through control of spin frequency, liquid viscosity, droplet size, total etchant volume, etchant concentration.
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Grunthaner, F. J.. 1980-04-01. Precise wet-chemical etching. https://ntrs.nasa.gov/citations/19790000364
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