Comparison of Single-Event Transients in an Epitaxial Silicon Diode Resulting from Heavy Ion- Focused X-Rayand Pulsed Laser-Induced Charge Generation.
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In this project, we start with optical simulation of an OLED to have a basic understanding of the mode dispersion inside the device. We first fabricated 1-D photonic crystals’ (PhCs) for corrugated green OLED devices observed enhanced EQE from 20% to 27%, which has the drawbacks of angular color shift. To resolve this issue, we fabricated poly crystalline PhCs (poly PhC) devices and observed alleviated angular color shift. The outcoupling efficiency is enhanced from 30% to 35%, which can be further enhanced to 60% by extracting the substrate mode. To further enhance the efficiency, we used RCWA (rigorous coupled-wave analysis) simulation to study the optical property in the corrugated device. We found out the corrugation reduces the reflectance of the Al cathode, lowers the cavity resonance and weakens the cavity emission. To preserve the cavity effect, we insert a low index Teflon layer (n = 1.3) between the ITO anode and the corrugated substrate, which increased the index contrast and hence the reflectance of the bottom electrode. As a result, the corrugated OLED with a Teflon layer shows a maximum outcoupling efficiency of 75%.
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The U.S. Department of Energy has a broad mission to ensure the nation’s security by addressing ongoing environmental challenges, developing novel energy production technologies, and mitigating nuclear security concerns. These efforts benefit from developing more effective semiconductor materials and devices. The research discussed in this report aims to further the development of these new electronics by improving implementations of vertical device structures, which offer theoretically better performance compared to lateral structures. Specifically, it reviews the background and development of a new and easy-to-use program for data processing and analysis from experiments run on vertical gallium nitride power devices. Current vertical structures fall short in critical performance metrics, such as On-Resistance and Breakdown Voltage, due to poor management of the device’s electric field. Junction termination extensions, or JTEs, are a field management technique that increases a device’s resilience to expected failure modes by controlling its surface electric fields. Each JTE design requires significant experimental validation, consisting of hundreds of tested devices, each outputting an enormous set of data points. The new software includes multiple methods of filtering large sets of device testing data to identify and remove flawed devices, automate device analyses, and provide statistical breakdowns for four metrics used to define the effectiveness of the JTE and the current carrying capacity of the device. These results can then be related back to fabrication techniques and device design, and in the future, be combined with processing simulations to further improve our understanding of the JTE mechanisms.
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Why are absolute energy measurements on DARHT needed? They are needed for: Comparison of methods for deconvolution and system identification, Bayesian formulation of the system identification problem, and cross-calibration results and improvements over previous calibration.
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