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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Nonlinear optical response from a van der Waals interface is modulated and enhanced in twistable boron nitride homostructures.
Nanotube porins form transmembrane nanomaterial-derived scaffolds that mimic the geometry and functionality of biological membrane channels. We report synthesis, transport properties, and osmotic energy harvesting performance of another member of the nanotube porin family: boron nitride nanotube porins (BNNTPs). Cryo–transmission electron microscopy imaging, liposome transport assays, and DNA translocation experiments show that BNNTPs reconstitute into lipid membranes to form functional channels of ~2-nm diameter. Ion transport studies reveal ion conductance characteristics of individual BNNTPs, which show an unusual C 1/4 scaling with ion concentration and pronounced pH sensitivity. Reversal potential measurements indicate that BNNTPs have strong cation selectivity at neutral pH, attributable to the high negative charge on the channel. BNNTPs also deliver very large power density up to 12 kW/m 2 in the osmotic gradient transport experiments at neutral pH, surpassing that of other BNNT-based devices by two orders of magnitude under similar conditions. Our results suggest that BNNTPs are a promising platform for mass transport and osmotic power generation.
Hexagonal boron nitride (h-BN) has emerged as a promising platform for generating room temperature single photons exhibiting high brightness and spin-photon entanglement. However, improving emitter purity, stability, and scalability remains a challenge for quantum technologies. Here, we demonstrate highly pure and stable single-photon emitters (SPEs) in h-BN by directly growing carbon-doped, centimeter-scale h-BN thin films using the pulsed laser deposition (PLD) method. These SPEs exhibit room temperature operation with polarized emission, achieving a g (2) (0) value of 0.015, which is among the lowest reported for room temperature SPEs and the lowest achieved for h-BN SPEs. It also exhibits high brightness (~0.5 million counts per second), remarkable stability during continuous operation (>15 min), and a Debye-Waller factor of 45%. First-principles calculations reveal unique carbon defects responsible for these properties, enabled by PLD’s low-temperature synthesis and in situ doping. Our results demonstrate an effective method for large-scale production of high-purity, stable SPEs in h-BN, enabling robust quantum optical sources for various quantum applications.
Results from KSTAR powder injection experiments, in which tens of milligrams of boron nitride (BN) were dropped into low-power H-mode plasmas, show an improvement in wall conditions in subsequent discharges and, in some cases, a reduction or elimination of edge-localized modes (ELMs). Injected powder is distributed by the plasma flow and is deposited on the wall and, over the course of several discharges, was observed to gradually reduce recycling by 33%, and decrease both the ELM amplitude and frequency. This is the first demonstration of the use of BN for ELM mitigation. In all of these experiments, an Impurity Powder Dropper (IPD) was used to introduce precise, controllable amounts of the materials into ELMy H-mode KSTAR discharges. The plasma duration was between 10 s and 15 s, 𝐼𝑝 = 500 kA, 𝐵𝑇 = 1.8 T, 𝑃NBI = 1.6 MW, and 𝑃ECH = 0.6 MW. Plasma densities were between 2 and 3 × 1019 m−3. In all cases, the pre-fill and startup gas-fueling was kept constant, suggesting that the decrease in baseline D𝛼 emission is in fact due to a reduction in recycling. The results presented herein highlight the viability of powder injection for intra-shot and between-shot wall conditioning.
Amorphous boron nitride (a-BN) exhibits remarkable electrical, optical, and chemical properties, alongside robust mechanical stability, making it a compelling material for advanced applications in nanoelectronics and photonics. This review comprehensively examines the unique characteristics of a-BN, emphasizing its electrical and optical attributes, state-of-the-art synthesis techniques, and device applications. Key advancements in low-temperature growth methods for a-BN are highlighted, offering insights into their potential for integration into scalable, CMOS-compatible platforms. Additionally, the review discusses the emerging role of a-BN as a dielectric material in electronic and photonic devices, serving as substrates, encapsulation layers, and gate insulators. Finally, perspectives on future challenges, including defect control, interface engineering, and scalability, are presented, providing a roadmap for realizing the full potential of a-BN in next-generation device technologies.
Data accompanying the Nanoscale journal article titled: Novel Boron Nitride MXenes as Promising Energy Storage Materials
Hexagonal boron nitride (hBN), also known as white graphite, is a transparent layered crystal with a wide bandgap. Its crystal structure resembles graphite, featuring layers composed of honeycomb lattices held together through van der Waals forces. The layered crystal structure of hBN facilitates exfoliation into thinner flakes and makes it highly anisotropic in in-plane and out-of-plane directions. Unlike graphite, hBN is both insulating and transparent, making it an ideal material for isolating devices from the environment and acting as a waveguide. As a result, hBN has found extensive applications in optical devices, electronic devices, and quantum photonic devices. This comprehensive tutorial aims to provide readers with a thorough understanding of hBN, covering its synthesis, lattice and spectroscopic characterization, and various applications in optoelectronic and quantum photonic devices. This tutorial is designed for both readers without prior experience in hBN and those with expertise in specific fields seeking to understand its relevance and connections to others.
This project explored chemical vapor deposition as a technique to synthesis cubic boron nitride (c-BN) for electronics and coating applications. Current c-BN synthesis techniques are greatly limiting due to requiring high pressure or non-equilibrium energy sources, such as ion bombardment.
Effect of Moisture Content on Shear Properties of Boron Carbide (B4C) Powder
EFFECT OF MOISTURE CONTENT ON SHEAR PROPERTIES OF BORON CARBIDE (B4C) POWDER
The main purpose of the Carbonara experiment is to provide much-needed data to inform physics modeling of boron carbide (B 4 C) subjected to a sweeping high explosive (HE) detonation. The proposed experiment will include three separate shots, each employing a rectangular slab of HE (4” × 3” × 1”) sandwiched between two wedges of B 4 C, see Fig.1. In each case the top B 4 C wedge tapers from a height of 2.5 cm to 0.5 cm, while the bottom wedge tapers from 1.5 cm to 0.5 cm. The wedges are 4” in the direction of the proton beam, and 3” in the direction transverse to the beam. Three shots are currently planned, each one using a different HE: PBX 9501, PBX 9502, and PBX 9701. The HE will be initiated using a line wave generator (LWG) to preserve planar symmetry, in conjunction with a Comp. B booster to smooth out the profile for the initial condition on the main charge and to aid in initiation of the PBX 9502 shot. In each case the booster spans the entire length and height of the main HE slab and extends 0.5” in toward the LWG.
The overarching objective of this project was to provide a system approach for developing the next generation of well cementing with remarkable multifunctional, high performance characteristics including mechanical, thermal, rheological and durability properties to prevent offshore spill and leakage at extreme high temperature, high pressure (HTHP) and corrosive conditions. Building on our scientifically illustrated principles, the objective of Phase I was to develop and tune our current proof-of-concept hexagonal boron-nitride (hBN)/cement composite to offer the best hybrid nanostructure, and optimum slurry formulation and rheological properties in environments with a variety of extreme conditions including high temperature, high pressure, and high acidity. This phase also focused on testing the actual barrier efficiency and performance of our new cement formulation against gas/liquid leakage at HT, and/or corrosive conditions. The objective of Phase 2 was product validation (meeting API/EPA standards), cost/risk analysis, and scale-up to facilitate integration for primary well cementing with no/minimal modification.
There are hundreds of both active and unused surface impoundments in the United States containing coal combustion residuals (CCRs) produced by coal-fired power plants which can leach toxic elements into surface and groundwater. Therefore, the development of efficient means for both the clean-up of surface impoundments and for deriving economically viable products from CCRs are urgent tasks for researchers. Herein, a microwave-assisted strategy is presented for converting a common coal combustion residual, coal fly ash (CFA), into zeolite-based sorbents for boron (B) removal from wastewater. Specifically, CFA constitutes the main source of Si and Al ions to produce zeolite type-A and the resulting sorbent subsequently undergoes simple cation exchange with Ca to enhance its B adsorption capacity. Structure and composition of the sorbents were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS), inductively coupled plasma (ICP)-mass spectrometry (MS), and ICP-optical emission spectroscopy (OES). The Ca-modified zeolite sorbent derived from CFA exhibits comparable B removal capacity with similar commercial zeolites.
This study developed promoted zeolite-based sorbents derived from coal fly ash to remove leachates (like boron) from ash impoundment or landfill to protect the environment and reuse legacy coal ash. The sorbents were synthesized using machine learning model results as guide to accelerate the sorbent development.
The goal of this project is to build upon the work performed under the Texas Tech IDEAS project (DE-AR0000964 monitored by Dr. Isik Kizilyalli) to bring the developed B-10 enriched hexagonal boron nitride (h- 10 BN or 10 BN or BN) semiconductor neutron detector technology to the next level of maturity. In comparison to He-3 ( 3 He) gas detectors, BN neutron detectors possess all the intrinsic advantages of semiconductor devices: light weight, compact size, fast response speed, high spatial resolution, high temperature and low voltage operation capability, ease of mass production via existing semiconductor infrastructures, low cost of operation and maintenance, flexible form factors, and durability. The project will develop a prototype h- 10 BN neutron detector as a potential replacement for the 3 He gas neutron detectors (LND 25185 or equivalent) used in various neutron survey meters currently produced and commercialized by Ludlum Measurements, Inc. (LMI). To increase the overall detection efficiency, it is essential to maximize the collection efficiency of charge carriers (electrons and holes) generated by the nuclear reaction, which demands a further push to achieve 10 BN epilayers with improved material quality. The material growth processes will be guided by characterization of structural, optical, and electrical properties of h-BN. Selective devices will be calibrated at LMI. During ARPA-E supporting period, the key material parameters of h-BN produced by metal organic chemical vapor deposition (MOCVD), including the layer thickness, mobility-lifetime product, surface recombination field and detector size for maintaining a high charge collection efficiency all have been improved by several orders of magnitude. These improvements have enabled the realization of high-performance h 10BN semiconductor thermal neutron detectors. Presently, h- 10 BN thermal neutron detectors developed under ARPA-E’s support hold the record high detection efficiency among all solid-state detectors at 59%. With further development in manufacturing, there is no question that h-BN detectors will replace the traditional He-3 gas detectors in certain application areas by offering obvious advantages of semiconductor technologies over gas detectors and opportunities for users to dedicate the scarce and expensive supply of He-3 gas to other application areas where substitutes of He-3 gas are not possible.
Several experimental trials were conducted to determine optimal sintering parameters and compositions for purchased boron carbide powder using spark plasma sintering/direct current sintering. Sputtering targets used to create ablators for the National Ignition Facility have been unable to survive post processing procedures suggesting that in-house fabrication may yield better results due to extended control.
This dataset contains the publicly available data for the publication "Stability analysis of WEST L-mode discharges with improved confinement from boron powder injection" by Bodner et al. The data is stored as both matlab save files (.mat) and text files (.txt). Instructions on how to the reproduce the figures are detailed in the included README.txt file.
A method comprises providing a plurality of nanostructures comprising a base material. The plurality of nanostructures are exposed to a first material at a first deposition temperature. The plurality of nanoparticles are exposed to a second material at a second deposition temperature, and exposed to a Boron-10 (10B) containing material at a third deposition temperature so as to form a 10B-metal oxide based composite nanostructure.